NGTB3N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker pplication T Jmax = 75 C Soft, Fast Free Wheeling Diode This is a PbFree Device 3, 65 V V CEsat =.6 V =.2 mj C Typical pplications Inductive Heating Soft Switching BSOLUTE MXIMUM RTINGS Rating Symbol Value Unit G E Collectoremitter voltage V CES 65 V Collector current @ TC = 25 C @ TC = C I C 6 3 Pulsed collector current, T pulse I CM 2 limited by T Jmax G C E TO247 CSE 34L Diode forward current @ TC = 25 C @ TC = C I F 6 3 MRKING DIGRM Diode pulsed current, T pulse limited I FM 2 by T Jmax Gateemitter voltage V GE 2 V Power Dissipation @ TC = 25 C @ TC = C P D 3 5 W 3N65IHL2 YWWG Operating junction temperature range T J 55 to +75 C Storage temperature range T stg 55 to +75 C Lead temperature for soldering, /8 from case for 5 seconds T SLD 26 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y WW G = ssembly Location = Year = Work Week = PbFree Package ORDERING INFORMTION Device Package Shipping NGTB3N65IHL2WG TO247 (PbFree) 3 Units / Rail Semiconductor Components Industries, LLC, 24 June, 24 Rev. Publication Order Number: NGTB3N65IHL2W/D
NGTB3N65IHL2WG THERML CHRCTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R JC.5 C/W Thermal resistance junctiontocase, for Diode R JC.46 C/W Thermal resistance junctiontoambient R J 4 C/W ELECTRICL CHRCTERISTICS ( unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STTIC CHRCTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = 5 V (BR)CES 65 V Collectoremitter saturation voltage, I C = 3, I C = 3, T J = 75 C V CEsat.6 2. 2.2 V Gateemitter threshold voltage V GE = V CE, I C = 5 V GE(th) 4.5 5.5 6.5 V Collectoremitter cutoff current, gate emitter shortcircuited V GE = V, V CE = 65 V V GE = V, V CE = 65 V, T J = 75 C I CES.2 2 m Gate leakage current, collectoremitter shortcircuited V GE = 2 V, V CE = V I GES n DYNMIC CHRCTERISTIC Input capacitance C ies 32 pf Output capacitance V CE = 2 V, V GE = V, f = MHz C oes 3 Reverse transfer capacitance C res 85 Gate charge total Q g 35 nc Gate to emitter charge V CE = 48 V, I C = 3, Q ge 26 Gate to collector charge Q gc 66 SWITCHING CHRCTERISTIC, INDUCTIVE LOD Turnoff delay time 45 ns Fall time V CC = 4 V, I C = 3 R g = 7 Turnoff switching loss V GE = V/ 5V.2 mj Turnoff delay time T J = 5 C 5 ns Fall time V CC = 4 V, I C = 3 R g = 94 Turnoff switching loss V GE = V/ 5V.4 mj DIODE CHRCTERISTIC Forward voltage V GE = V, I F = 3 V GE = V, I F = 3, T J = 75 C V F...3 V Reverse recovery time t rr 43 ns Reverse recovery charge I F = 3, V R = 2 V di F /dt = 2 / s Q rr 77 nc Reverse recovery current I rrm 35 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2
NGTB3N65IHL2WG TYPICL CHRCTERISTICS 2 V GE = 2 V to 3 V V 8 V 6 4 2 9 V 8 V 7 V 2 3 4 5 6 7 8 Figure. Output Characteristics 2 8 6 4 T J = 5 C V GE = 2 V to 3 V V V 9 V 8 V 2 7 V 2 3 4 5 6 7 8 Figure 2. Output Characteristics 2 T J = 55 C V GE = 2 V to 3 V V 8 V 6 4 9 V 2 8 V 2 3 4 5 6 7 8 Figure 3. Output Characteristics 2 T J = 5 C 8 6 4 2 2 4 6 8 2 4 V GE, GTEEMITTER VOLTGE (V) Figure 4. Typical Transfer Characteristics 3. C ies 2.5 I C = 5 I C = 4 2. I C = 3 I C = 2.5 C oes..5 75 5 25 25 5 75 25 5 75 2 2 3 4 5 6 C res 7 8 9 T J, JUNCTION TEMPERTURE ( C) Figure 5. V CE(sat) vs. T J Figure 6. Typical Capacitance CPCITNCE (pf) 3
NGTB3N65IHL2WG TYPICL CHRCTERISTICS I F, FORWRD CURRENT () 2 8 T J = 5 C 6 4 2.5..5 2. V F, FORWRD VOLTGE (V) Figure 7. Diode Forward Characteristics V GE, GTEEMITTER VOLTGE (V) 2 8 6 4 2 8 6 4 2 2 4 6 8 2 4 6 Q G, GTE CHRGE (nc) Figure 8. Typical Gate Charge V CE = 4 V I C = 3.6.5.4.3.2. V CE = 4 V I C = 3 R g = 2 4 6 8 2 4 6 T J, JUNCTION TEMPERTURE ( C) Figure 9. Switching Loss vs. Temperature V CE = 4 V I C = 3 R g = 2 4 6 8 2 4 6 T J, JUNCTION TEMPERTURE ( C) Figure. Switching Time vs. Temperature.6.4.2..8.6.4.2 V CE = 4 V T J = 5 C R g = 4 4 24 34 44 54 64 74 84 Figure. Switching Loss vs. I C V CE = 4 V T J = 5 C R g = 4 4 24 34 44 54 64 74 Figure 2. Switching Time vs. I C 4
NGTB3N65IHL2WG TYPICL CHRCTERISTICS..5 V CE = 4 V I C = 3 T J = 5 C 5 5 25 35 45 55 65 75 85 V CE = 4 V I C = 3 T J = 5 C 5 5 25 35 45 55 65 75 85 R G, GTE RESISTOR ( ) R G, GTE RESISTOR ( ) Figure 3. Switching Loss vs. R G Figure 4. Switching Time vs. R G.5.45.4.35.3.25.2.5..5 R g = I C = 3 T J = 5 C 75 225 275 325 375 425 475 525 575 R g = I C = 3 T J = 5 C 75 225 275 325 375 425 475 525 575 Figure 5. Switching Loss vs. V CE Figure 6. Switching Time vs. V CE. dc operation Single Nonrepetitive Pulse T C = 25 C Curves must be derated linearly with increase in temperature 5 s ms s, T C = 5 C Figure 7. Safe Operating rea Figure 8. Reverse Bias Safe Operating rea 5
NGTB3N65IHL2WG TYPICL CHRCTERISTICS R(t) ( C/W) 5% Duty Cycle R JC =.5 2%. % 5% R i ( C/W) C i (J/W) Junction R 2% R 2 R n Case.6485.558.682.52..5673.9734 C i = i /R i.767.8529.4259.7344 C C 2 C.95 3.325233. n.4 26863.47 Single Pulse Duty Factor = t /t 2 Peak T J = P DM x Z JC + T C....... PULSE TIME (sec) Figure 9. IGBT Transient Thermal Impedance R JC =.46 R(t) ( C/W).. 5% Duty Cycle 2% % 5% 2% Single Pulse Junction R R 2 R n C i = i /R i C C 2 Duty Factor = t /t 2 Peak T J = P DM x Z JC + T C...... C n Case R i ( C/W).26867.237.3495.39625.8767.625.336873.26525.3655.4856 C i (J/W).37.3344.286.798.4.962.2968.924.2766.23586 PULSE TIME (sec) Figure 2. Diode Transient Thermal Impedance 6
NGTB3N65IHL2WG PCKGE DIMENSIONS E2/2 NOTE 4 D L 2X b2 NOTE 4 E 2 3 e Q E2 NOTE 3 L NOTE 5 c b4 3X b.25 M B M B NOTE 7 SETING PLNE TO247 CSE 34L ISSUE S P.635 M B M 4 NOTE 6 NOTES:. DIMENSIONING ND TOLERNCING PER SME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MY BE ROUNDED. 4. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH. MOLD FLSH SHLL NOT EXCEED.3 PER SIDE. THESE DIMENSIONS RE MESURED T THE OUTERMOST EXTREME OF THE PLSTIC BODY. 5. LED FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L. 6. P SHLL HVE MXIMUM DRFT NGLE OF.5 TO THE TOP OF THE PRT WITH MXIMUM DIMETER OF 3.9. 7. DIMENSION TO BE MESURED IN THE REGION DEFINED BY L. MILLIMETERS DIM MIN MX 4.7 5.3 2.2 2.6 b..4 b2.65 2.35 b4 2.6 3.4 c.4.8 D 2.3 2.4 E 5.5 6.25 E2 4.32 5.49 e 5.45 BSC L 9.8 2.8 L 3.5 4.5 P 3.55 3.65 Q 5.4 6.2 S 6.5 BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes withouurther notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is noor resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 US Phone: 33675275 or 8344386 Toll Free US/Canada Fax: 33675276 or 83443867 Toll Free US/Canada Email: orderlit@onsemi.com N. merican Technical Support: 82829855 Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 835875 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTB3N65IHL2W/D