P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT UMMARY V (V) -3 R (on) max. () at V G = - V.9 R (on) max. () at V G = -4.5 V.3 Q g typ. (nc) 3.5 I (A) a -2. e Configuration ingle 2 3 4 G APPLICATION Adapter switch Load switch C/C converters High speed switching Power management in battery-operated, mobile and wearable devices G P-Channel MOFET ORERING INFORMATION Package Lead (Pb)-free and halogen-free O-8 -T-GE3 ABOLUTE MAXIMUM RATING (T A = 25 C, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT rain-source voltage V -3 V Gate-source voltage V G ± 2-2. e T C = 7 C - a Continuous drain current (T J = 5 C) I T A =25 C -8. b, c T A = 7 C -.9 b, c A Pulsed drain current (t = μs) I M -32 a -4 Continuous source-drain diode current I T A = 7 C -.9 b, c 4.8 T C = 7 C 3. Maximum power dissipation P W T A = 25 C 2.2 b, c T A = 7 C.4 b, c Operating junction and storage temperature range T J, T stg -55 to +5 C oldering recommendations (peak temperature) d, e 2 THERMAL REITANCE RATING PARAMETER YMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, d t s R thja 45 5 Maximum junction-to-case (drain) teady state R thjf 2 2 C/W Notes a. Package limited b. urface mounted on " x " FR4 board c. t = s d. Maximum under steady state conditions is C/W e. 7-342-Rev. A, -Mar-7 ocument Number: 75339 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
PECIFICATION (T J = 25 C, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT tatic rain-source breakdown voltage V V G = V, I = -25 μa -3 - - V V temperature coefficient V /T J - -25 - I = -25 μa V G(th) temperature coefficient V G(th) /T J - 4.5 - mv/ C Gate-source threshold voltage V G(th) V = V G, I = -25 μa - - -2.2 V Gate-source leakage I G V = V, V G = ± 2 V - - ± na V = -3 V, V G = V - - - Zero gate voltage drain current I V = -3 V, V G = V, T J = 55 C - - - μa On-state drain current a I (on) V -5 V, V G = V - - - A rain-source on-state resistance a V G = - V, I = -9 A -.5.9 R (on) V G = -4.5 V, I = -7 A -.23.3 Forward transconductance a g fs V = - V, I = -9 A - 25 - ynamic b Input capacitance C iss - 5 - Output capacitance C oss V = -5 V, V G = V, f = MHz - 8 - pf Reverse transfer capacitance C rss - 5 - V = -5 V, V G = - V, I = -5 A - 28 42 Total gate charge Q g V = -5 V, V G = -4.5 V, I = -5 A - 3.5 2 Gate-source charge Q gs - 4.4 - V = -5 V, V G = -4.5 V, I = -5 A Gate-drain charge Q gd - 4.3 - nc Gate resistance R g f = MHz. 3.3. Turn-on delay time t d(on) - 2 5 Rise time t r V = -5 V, R L = 5, I - A, - 3 Turn-off delay time t d(off) V GEN = -4.5 V, R g = - 2 4 Fall time t f - 3 Turn-on delay time t d(on) - 9 2 ns Rise time t r V = -5 V, R L = 5, I - A, - 8 35 Turn-off delay time t d(off) V GEN = - V, R g = - 23 45 Fall time t f - 5 3 rain-ource Body iode Characteristics Continuous source-drain diode current I - - -4 Pulse diode forward current I M - - -32 A Body diode voltage V I = -5 A, V G = V - -.82 -.2 V Body diode reverse recovery time t rr - 2 4 ns Body diode reverse recovery charge Q rr - 2 nc I F = -5 A, di/dt = A/μs, T J = 25 C Reverse recovery fall time t a - - ns Reverse recovery rise time t b - - Notes a. Pulse test; pulse width 3 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 7-342-Rev. A, -Mar-7 2 ocument Number: 75339 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 4 V G = V thru 5 V 4 I - rain Current (A) 3 2 V G = 4 V V G = 3 V.5.5 2 V - rain-to-ource Voltage (V) I - rain Current (A) 3 2 T C =-55 C 2 3 4 5 V G - Gate-to-ource Voltage (V) Output Characteristics Transfer Characteristics.4 2 R (on) - On-Resistance (Ω).3.2. V G = 4.5 V V G = V C - Capacitance (pf) 5 5 C oss C iss 2 3 4 I - rain Current (A) C rss 5 5 2 25 3 V - rain-to-ource Voltage (V) On-Resistance vs. rain Current and Gate Voltage Capacitance V G - Gate-to-ource Voltage (V) 8 4 2 I = 5 A V = 5 V V = 7.5 V V = 24 V 5 5 2 25 3 Q g - Total Gate Charge (nc) R (on) - On-Resistance (Normalized).5.4.3.2...9.8 I = 9 A V G = V V G = 4.5V.7-5 -25 25 5 75 25 5 T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 7-342-Rev. A, -Mar-7 3 ocument Number: 75339 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (25 C, unless otherwise noted).5 I - ource Current (A) T J = 5 C T J = 25 C R (on) - On-Resistance (Ω).4.3.2. I = 9 A T J = 5 C T J = 25 C..2.4..8..2 V - ource-to-rain Voltage (V) 2 4 8 V G - Gate-to-ource Voltage (V) ource-rain iode Forward Voltage On-Resistance vs. Gate-to-ource Voltage 2.2 2. 8 V G(th) (V).8..4 I = 25 μa Power (W) 4.2 2. -5-25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage.... Time (s) ingle Pulse Power, Junction-to-Ambient Limited by R (on) () I - rain Current (A) μs ms ms ms s. s T A = 25 C C ingle pulse.. V - rain-to-ource Voltage (V) () V G > minimum V G at which R (on) is specified afe Operating Area, Junction-to-Ambient 7-342-Rev. A, -Mar-7 4 ocument Number: 75339 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 5 2 5 I - rain Current (A) 9 3 Power (W) 4 3 2 25 5 75 25 5 T F - Foot Temperature ( C) 25 5 75 25 5 T F - Foot Temperature ( C) Current erating a Power, Junction-to-Foot Note a. The power dissipation P is based on T J max. = 25 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 7-342-Rev. A, -Mar-7 5 ocument Number: 75339 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 3. T JM -T A = P M Z (t) thja ingle pulse 4. urface mounted..... quare Wave Pulse uration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t 2 t. uty cycle, = t 2 2. Per unit base = R thja = C/W uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 ingle pulse..... quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75339. 7-342-Rev. A, -Mar-7 ocument Number: 75339 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
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