NTP5N6, NTB5N6 Power OSET 5 Amps, 6 Volts NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. eatures Higher Current Rating ower R DS(on) ower V DS(on) ower Capacitances ower Total ate Charge Tighter V SD Specification ower Diode Reverse Recovery Time ower Reverse Recovery Stored Charge Pbree Packages are Available Typical Applications Power Supplies Converters Power otor Controls Bridge Circuits AXIU RATINS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit tosource Voltage V DSS 6 TOAB D PAK toate Voltage (R S = ) V DR 6 CASE A CASE 8B atetosource Voltage STYE 5 STYE Continuous V S NonRepetitive (t p ms) V S Current Continuous @ T A = 5 C Continuous @ T A = C Single Pulse (t p s) Total Power Dissipation @ T A = 5 C Derate above 5 C Total Power Dissipation @ T A = 5 C (Note ) Total Power Dissipation @ T A = 5 C (Note ) I D I D I D 5 5 P D 5.8.. Operating and Storage Temperature Range T J, T stg 55 to +75 Single Pulse tosource Avalanche Energy Starting T J = 5 C (V DD = 5, V S =, R = 5, I (pk) = A, =. mh, V DS = 6 ) Thermal Resistance JunctiontoCase JunctiontoAmbient (Note ) JunctiontoAmbient (Note ) aximum ead Temperature for Soldering Purposes, /8 in from case for seconds Adc Apk / C C E AS mj R JC R JA R JA. 6.8 6. C/ T 6 C aximum ratings are those values beyond which device damage can occur. aximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. hen surface mounted to an R board using in pad size, (Cu Area.7 in ).. hen surface mounted to an R board using the minimum recommended pad size, (Cu Area. in ). ate 5 APERES, 6 VOTS R DS(on) = 6 m NTx5N6 AY NChannel D S ARKIN DIARAS & PIN ASSINENTS Source NTx5N6 x A Y ate NTx 5N6 AY = Device Code = B or P = Assembly ocation = Year = ork eek = Pbree Package Source ORDERIN INORATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, C, 5 August, 5 Rev. Publication Order Number: NTP5N6/D
NTP5N6, NTB5N6 EECTRICA CHARACTERISTICS (T J = 5 C unless otherwise noted) O CHARACTERISTICS tosource Breakdown Voltage (Note ) (V S =, I D = 5 Adc) Temperature Coefficient (Positive) Zero ate Voltage Current (V DS = 6, V S = ) (V DS = 6, V S =, T J = 5 C) Characteristic Symbol in Typ ax Unit V (BR)DSS 6 atebody eakage Current (V S = ±, V DS = ) I SS ± nadc ON CHARACTERISTICS (Note ) ate Threshold Voltage (Note ) (V DS = V S, I D = 5 Adc) Threshold Temperature Coefficient (Negative) Static tosource OnResistance (Note ) (V S =, I D =.5 Adc) Static tosource OnVoltage (Note ) (V S =, I D = 5 Adc) (V S =, I D =.5 Adc, T J = 5 C) I DSS V S(th). 7 57.8 7... R DS(on) 6 V DS(on) orward Transconductance (Note ) (V DS = 8., I D = Adc) g S 6.6 mhos DYNAIC CHARACTERISTICS Input Capacitance C iss 75 p Output Capacitance (V DS = 5, V S =, f =. Hz) C oss 5 85 Transfer Capacitance C rss 76 6 SITCHIN CHARACTERISTICS (Note ) TurnOn Delay Time t d(on) 5 ns Rise Time (V DD =, I D = 5 Adc, t r TurnOff Delay Time V S =, R = 9. ) (Note ) t d(off) 7 all Time t f 6 ate Charge Q T 6 nc (V DS = 8, I D = 5 Adc, V S = ) (Note ) Q 6. Q 5 SOURCEDRAIN DIODE CHARACTERISTICS orward OnVoltage (I S = 5 Adc, V S = ) (Note ) V SD.8. (I S = 5 Adc, V S =, T J = 5 C).9 Reverse Recovery Time t rr 5. ns (I S = 5 Adc, V S =, di S /dt = A/ s) (Note ) t a 6 t b 6.9 Reverse Recovery Stored Charge Q RR.87 C. Pulse Test: Pulse idth s, Duty Cycle %.. Switching characteristics are independent of operating junction temperatures. ORDERIN INORATION.9.9. mv/ C Adc mv/ C Device Package Shipping NTP5N6 TOAB 5 Units / Rail NTP5N6 TOAB 5 Units / Rail (Pbree) NTB5N6 D PAK 5 Units / Rail NTB5N6 D PAK 5 Units / Rail (Pbree) NTB5N6T D PAK 8 Units / Tape & Reel NTB5N6T D PAK (Pbree) 8 Units / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. m
NTP5N6, NTB5N6 9 8 7 6 5 V S = V V S = 9 V V S = 8 V V S = 7.5 V 9 V S = 7 V V DS > = V 8 V S = 6.5 V V S = 6 V 7 6 5 V S = 5.5 V V S = 5 V V S =.5 V T J = 5 C T J = C T J = 55 C 5 6.5.5 5 5.5 6 6.5 7 7.5 8 V DS, DRAINTOSOURCE VOTAE (VOTS) V S, ATETOSOURCE VOTAE (VOTS) igure. OnRegion Characteristics igure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE ( ).5...6.8. V S = V T J = C T J = 5 C...8.6. V S = V. T J = 55 C. V S = 5 V.8 5 6 7 8 9 5 6 7 8 9 R DS(on), DRAINTOSOURCE RESISTANCE ( ) igure. OnResistance vs. atetosource Voltage igure. OnResistance vs. Current and ate Voltage R DS(on), DRAINTOSOURCE RESISTANCE (NORAIZED)..8.6...8 I D =.5 A V S = V.6 5 5 5 5 75 5 T J, JUNCTION TEPERATURE ( C) 5 I DSS, EAKAE (na) V S = V T J = 5 C T J = 5 C T J = C 75 5 6 V DS, DRAINTOSOURCE VOTAE (VOTS) igure 5. OnResistance Variation with Temperature igure 6. tosource eakage Current vs. Voltage
NTP5N6, NTB5N6 C, CAPACITANCE (p) t, TIE (ns) 6 8 6 8 V DS = V V S = V T J = 5 C C iss C rss 5 ATETOSOURCE OR DRAINTOSOURCE VOTAE (VOTS) igure 7. Capacitance Variation V DS = V I D = 5 A V S = V t f t r R, ATE RESISTANCE ( ) V DS, DRAINTOSOURCE VOTAE (VOTS) igure. aximum Rated orward Biased Safe Operating Area V S, ATETOSOURCE VOTAE (VOTS) I S, SOURCE CURRENT (APS) E AS, SINE PUSE DRAINTOSOURCE AVAANCHE ENERY (mj) Q g, TOTA ATE CHARE (nc).6.6.68.7.76.8.8.88.9.96. V SD, SOURCETODRAIN VOTAE (VOTS).. 5 5 75 5 5 75 8 6 5 8 6 5 t d(on) igure 9. Resistive Switching Time Variation vs. ate Resistance V S = V SINE PUSE T C = 5 C C iss C oss C rss V S V DS 5 5 t d(off) dc ms ms R DS(on) imit Thermal imit Package imit s 8 6 8 Q V S I D = 5 T J = 5 C 8 6 igure 8. atetosource and tosource Voltage vs. Total Charge V S = V T J = 5 C igure. Diode orward Voltage vs. Current I D = 5 A Q Q T T J, STARTIN JUNCTION TEPERATURE ( C) igure. aximum Avalanche Energy vs. Starting Junction Temperature
NTP5N6, NTB5N6 r(t), EECTIVE TRANSIENT THERA RESPONSE (NORAIZED). Normalized to R JC at Steady State r(t), EECTIVE TRANSIENT THERA RESISTANCE (NORAIZED)........ t, TIE (s) igure. Thermal Response Normalized to R JA at Steady State, square Cu Pad, Cu Area.7 in, x inch R board...... t, TIE (s) igure. Thermal Response 5
NTP5N6, NTB5N6 PACKAE DIENSIONS D PAK CASE 8B ISSUE J T SEATIN PANE B VARIABE CONIURATION ZONE S D P. (.5) T R B K N C H A E V J U P NOTES:. DIENSIONIN AND TOERANCIN PER ANSI Y.5, 98.. CONTROIN DIENSION: INCH.. 8B THRU 8B OBSOETE, NE STANDARD 8B. INCHES IIETERS DI IN AX IN AX A..8 8.6 9.65 B.8.5 9.65.9 C.6.9.6.8 D..5.5.89 E.5.55....5 7.87 8.89. BSC.5 BSC H.8...79 J.8.5.6.6 K.9..9.79.5.7..8.8. 7. 8. N.97 RE 5. RE P.79 RE. RE R.9 RE.99 RE S.575.65.6 5.88 V.5.55.. STYE : PIN. ATE. DRAIN. SOURCE. DRAIN VIE VIE VIE SODERIN OOTPRINT* 8.8..66..6. 5.8. 7..67.5. SCAE : mm inches *or additional information on our Pbree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D. 6
NTP5N6, NTB5N6 PACKAE DIENSIONS TO CASE A9 ISSUE AA H Q Z V B N D A K T U R J S C T SEATIN PANE NOTES:. DIENSIONIN AND TOERANCIN PER ANSI Y.5, 98.. CONTROIN DIENSION: INCH.. DIENSION Z DEINES A ZONE HERE A BODY AND EAD IRREUARITIES ARE AOED. INCHES IIETERS DI IN AX IN AX A.57.6.8 5.75 B.8.5 9.66.8 C.6.9.7.8 D.5.5.6.88..7.6.7.95.5..66 H..55.8.9 J.8.5.6.6 K.5.56.7.7.5.6.5.5 N.9..8 5. Q...5. R.8...79 S.5.55.5.9 T.5.55 5.97 6.7 U..5..7 V.5.5 Z.8. STYE 5: PIN. ATE. DRAIN. SOURCE. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORDERIN INORATION ITERATURE UIENT: iterature Distribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 858 USA Phone: 88977 or 886 Toll ree USA/Canada ax: 889779 or 8867 Toll ree USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll ree USA/Canada Japan: ON Semiconductor, Japan Customer ocus Center 9 Kamimeguro, eguroku, Tokyo, Japan 55 Phone: 857785 7 ON Semiconductor ebsite: Order iterature: http://www.onsemi.com/litorder or additional information, please contact your local Sales Representative. NTP5N6/D