New Product SST9NL/U9NL Monolithic N-Channel JFET Dual PRODUCT SUMMARY V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS - V GS Max (mv) -. to -. - - FEATURES BENEFITS APPLICATIONS Anti Latchup Capability Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise: 9 nv Hz High CMRR: db External Substrate Bias Avoids Latchup Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed, Temp-Compensated, Single-Ended Input Amps High Speed Comparators Impedance Converters DESCRIPTION The low cost SST9NL and U9NL JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with I G guaranteed at V DG = V. Pins and on the SST9NL and pin on the U9NL part numbers enable the substrate to be connected to a positive, external bias (V DD ) to avoid latchup. Narrow Body SOIC The U9NL in the hermetically-sealed TO-7 package is available with full military processing. The SST9NL in the SO- package provides ease of manufacturing. The symmetrical pinout prevents improper orientation. The SST9NL is available with tape-and-reel options for compatibility with automatic assembly methods. TO-7 S SUBSTRATE S G D 7 G 7 G 6 D SUBSTRATE S D 6 D Top View Marking Codes: SST9NL - 9NL G S CASE, SUBSTRATE Top View U9NL ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage............................... - V Gate Current................................................. ma Lead Temperature ( / 6 from case for sec.).................. C Storage Temperature................................... -6 to C Operating Junction Temperature.......................... - to C Document Number: 77 S-7 Rev. A, 7-Feb- Power Dissipation : Per Side a........................ mw Total b........................... mw Notes a. Derate mw/ C above C b. Derate mw/ C above C 7-
SST9NL/U9NL New Product SPECIFICATIONS (T A = C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ a Max Unit Static Gate-Source Breakdown Voltage V (BR)GSS I G = - A, V DS = V - -7 Gate-Source Cutoff Voltage V GS(off) V DS = V, = na -. - -. Saturation Drain Current b SS V DS = V, V GS = V. ma Gate Reverse Current I GSS T A = C - - na V GS = - V, V DS = V - - pa Gate Operating Current I G T A = C -. - na V DG = V, = A - - pa V V DG = V, = A -. -. - Gate-Source Voltage V GS = A -. V Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V Dynamic Common-Source Forward Transconductance g fs VDS = V, V GS = V f = khz Common-Source Output Conductance g os..6 ms S Common-Source Input Capacitance C iss V DS = V, V GS = V Common-Source C Reverse Transfer Capacitance rss f = MHz. pf Drain-Gate Capacitance C dg V DG = V, I S =, f = MHz. Equivalent Input Noise Voltage e n V DS = V, V GS = V, f = khz Noise Figure Matching NF V DS = V, V GS = V f = Hz, R G = M nv Hz. db Differential Gate-Source Voltage V GS V GS V DG = V, = A mv Gate-Source Voltage Differential Change with Temperature V GS V GS T V DG = V, = A T A = - to C V/ C Saturation Drain Current Ratio SS SS V DS = V, V GS = V..97 Transconductance Ratio g fs g fs Differential Output Conductance g os g os V DS = V, = A f = khz..97. S Differential Gate Current I G I G V DG = V, = A T A = C. na Common Mode Rejection Ratio CMRR V DG = to V, = A db Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NQP b. Pulse test: PW s duty cycle %. 7- Document Number: 77 S-7 Rev. A, 7-Feb-
New Product SST9NL/U9NL TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage na Gate Leakage Current SS - Saturation Drain Current (ma) g fs SS SS @ V DS = V, V GS = V g fs @ V DG = V, V GS = V f = khz.6... g fs - Forward Transconductance (ms) I G - Gate Leakage na na pa pa pa I G @ = A T A = C I GSS @ C A A A I GSS @ C T A = C - - - - - V GS(off) - Gate-Source Cutoff Voltage (V). pa V DG - Drain-Gate Voltage (V) V GS(off) = - V V GS(off) = - V V GS = V -. V V GS = V -. V -. V -.6 V -.6 V -.9 V -. V -. V -. V -. V -. V -. V -. V -. V -. V 6 6. V GS(off) = - V V GS(off) = - V V GS = V -. V.6 V GS = V -. V. -.6 V.. -. V -.6 V -. V -. V.. -.9 V -. V -. V -. V. -. V. -. V -. V -.6 V -. V...6....6. Document Number: 77 S-7 Rev. A, 7-Feb- 7-
SST9NL/U9NL New Product TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) V GS(off) = - V Transfer Characteristics V DS = V V DG = V T A = C Gate-Source Differential Voltage t T A = - C C (mv) V GS - V GS C -. -. -. -. -... V GS - Gate-Source Voltage (V) Voltage Differential with Temperature Common Mode Rejection Ratio V DG = V V GS - V GS ( V/ C ) T A = - to C T A = to C CMRR (db) CMRR = log V DG = - V - V V DG V GS - V GS 9.... Circuit Voltage Gain k On-Resistance A V - Voltage Gain 6. V GS(off) = - V A V g fs R L R L g os Assume V DD = V, V DS = V R L V - V. r DS(on) - Drain-Source On-Resistance ( Ω ) 6 V GS(off) = - V - V.. 7- Document Number: 77 S-7 Rev. A, 7-Feb-
New Product SST9NL/U9NL TYPICAL CHARACTERISTICS (T A = C UNLESS OTHERWISE NOTED) - Input Capacitance (pf) Ciss 6 Common-Source Input Capacitance vs. Gate-Source Voltage f = MHz V DS = V V V V - - - -6 - V GS - Gate-Source Voltage (V) - Reverse Feedback Capacitance (pf) Crss Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = MHz V DS = V V V V - - - -6 - V GS - Gate-Source Voltage (V) en - Noise Voltage nv / Hz 6 Equivalent Input Noise Voltage vs. Frequency V DS = V @ ma V GS = V g os - Output Conductance (µs)..... Output Conductance V GS(off) = - V C T A = - C C V DS = V f = khz k k k f - Frequency (Hz)... Common-Source Forward Transconductance k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage g fs - Forward Transconductance (ms).... V GS(off) = - V C T A = - C C V DS = V f = khz.. r DS(on) - Drain-Source On-Resistance ( Ω ) 6 g os r DS r DS @ = A, V GS = V g os @ V DS = V, V GS = V, f = khz - - - - - 6 gos- Output Conductance ( S) V GS(off) - Gate-Source Cutoff Voltage (V) Document Number: 77 S-7 Rev. A, 7-Feb- 7-
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