Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A

Similar documents
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

High Voltage Trench MOS Barrier Schottky Rectifier

High-Voltage Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A

Surface Mount ESD Capability Rectifiers

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

FEATURES. Heatsink. 1 2 Pin 1 Pin 2

Small Signal Fast Switching Diode

Surface Mount ESD Capability Rectifier

Part Type differentiation Package 1N5550 V RRM = 200 V G-4 1N5551 V RRM = 400 V G-4 1N5552 V RRM = 600 V G-4

200mA, 30V Schottky Barrier Diode

Parameter Test condition Symbol Value Unit Power dissipation P tot 300 1) mw

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode

4-Line BUS-Port ESD-Protection

Hyperfast Rectifier, 8 A FRED Pt

Hyperfast Rectifier, 1 A FRED Pt

350mW, SMD Switching Diode

Small Signal Fast Switching Diode FEATURES

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Part Ordering code Type Marking Remarks 1N4148 1N4148-TAP or 1N4148-TR V4148 Ammopack/tape and reel

Part Ordering code Type Marking Remarks LL42 LL42-GS18 or LL42-GS08 - Tape and Reel LL43 LL43-GS18 or LL43-GS08 - Tape and Reel

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Zener Diodes FEATURES APPLICATIONS

LL4148 / LL4448. Small Signal Fast Switching Diodes. Vishay Semiconductors

BAV100/101/102/103. Small Signal Switching Diodes, High Voltage. Vishay Semiconductors

Two-Line ESD Protection in SOT-23

Single Phase Fast Recovery Bridge (Power Modules), 61 A

Small Signal Zener Diodes, Dual

BYT52. Fast Avalanche Sinterglass Diode. Vishay Semiconductors

Silicon PIN Photodiode

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) /box

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection

VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY

Optocoupler, Phototransistor Output, no Base Connection

Small Signal Zener Diodes, Dual

BAV300 / 301 / 302 / 303

Hyperfast Rectifier, 2 x 15 A FRED Pt

Silicon PIN Photodiode

Ultrafast Rectifier, 8 A FRED Pt

Complementary (N- and P-Channel) MOSFET

Low VF SMD Schottky Barrier Diode

N-Channel 20 V (D-S) MOSFET

FEATURES DESCRIPTION APPLICATIONS

Battery Disconnect Switch

Small Signal Zener Diodes, Dual

Ultrafast Rectifier, 2 x 15 A FRED Pt

Optocoupler, Phototransistor Output, with Base Connection

Small Signal Zener Diodes

Dual N-/Dual P-Channel 30-V (D-S) MOSFETs

Ultrafast Rectifier, 16 A FRED Pt

J/SST111 Series. N-Channel JFETs. Vishay Siliconix J111 SST111 J112 SST112 J113 SST113

Monolithic N-Channel JFET Dual

Small Signal Zener Diodes

Aluminum Capacitors Power Long Life Snap-In

N-Channel 20-, 30-, 40-V (D-S) MOSFETs

Ultrafast Rectifier, 8 A FRED Pt

Small Signal Zener Diodes

BYW52 / 53 / 54 / 55 / 56

N-Channel 40-V (D-S) MOSFET

Small Signal Zener Diodes

Solid Tantalum Chip Capacitors, TANTAMOUNT, Conformal Coated, Maximum CV, Low ESR

Parameter Test condition Symbol Value Unit Zener current (see Table "Electrical Characteristics") Power dissipation P tot 1.3

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline

Silicon PIN Photodiode

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

Metal Film, Cylindrical Resistors

N-Channel 30-V (D-S) MOSFET

Optocoupler, Phototransistor Output, with Base Connection

Current Sensing MOSFET, N-Channel 30-V (D-S)

Small Signal Zener Diodes

N-Channel 40-V (D-S) MOSFET

Optocoupler with Transistor Output

N-Channel 20 V (D-S) MOSFET

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode

Complementary MOSFET Half-Bridge (N- and P-Channel)

Ultrafast Rectifier, 30 A FRED Pt

MUR1620CT MURB1620CT MURB1620CT-1

IGBT PIM Module, 15 A

VS-5EWL06FN-M3. Ultralow V F Ultrafast Rectifier, 5 A FRED Pt. Vishay Semiconductors. FEATURES DESCRIPTION / APPLICATIONS

Hyperfast Rectifier, 8 A FRED Pt

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

Small Signal Zener Diodes

N-Channel 30 V (D-S) MOSFET

N-Channel and P-Channel 20 V (D-S) MOSFET

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process

Hyper Fast Rectifier, 8 A FRED Pt

P-Channel 30-V (D-S) MOSFET

Aluminum Capacitors Power Printed Wiring Style

Double Layer Capacitors

Filter Inductors, High Current, Radial Leaded

Hyperfast Rectifier, 30 A FRED Pt

Transcription:

New Product V3000C, VF3000C, VB3000C & VI3000C Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.56 V at I F = 5 A TMBS TO0AB ITO0AB 3 3 V3000C VF3000C CASE TO63AB TO6AA 3 VB3000C VI3000C HEATSIN PRIMARY CHARACTERISTICS I F(AV) x 5 A V RRM 00 V I FSM 50 A V F at I F = 5 A 0.648 V T J max. 50 C FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level, per JSTD00, LF maximum peak of 45 C (for TO63AB package) Solder bath temperature 75 C maximum, 0 s, per JESD B06 (for TO0AB, ITO0AB and TO6AA package) Compliant to RoHS directive 00/95/EC and in accordance to WEEE 00/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, ORing diode, dctodc converters and reverse battery protection. MECHANICAL DATA Case: TO0AB, ITO0AB, TO63AB and TO6AA Molding compound meets UL 94 V0 flammability rating Base P/NE3 RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per JSTD00 and JESD B0 E3 suffix meets JESD 0 class A whisker test Polarity: As marked Mounting Torque: 0 inlbs maximum MAXIMUM RATINGS (T A = 5 C unless otherwise noted) PARAMETER SYMBOL V3000C VF3000C VB3000C VI3000C UNIT Maximum repetitive peak reverse voltage V RRM 00 V Maximum average forward rectified current (fig. ) per device per diode I F(AV) 30 5 Peak forward surge current 8.3 ms single half sinewave superimposed on rated load per diode I FSM 50 A Nonrepetitive avalanche energy at T J = 5 C, L = 60 mh per diode E AS 00 mj Peak repetitive reverse current at t p = µs, khz, T J = 38 C ± C per diode I RRM 0.5 A Voltage rate of change (rated V R ) dv/dt 0 000 V/µs Isolation voltage (ITO0AB only) from termal to heatsink t = min V AC 500 V Operating junction and storage temperature range T J, T STG 40 to + 50 C A Document Number: 8904 Revision: 4Jun09 PDDAmericas@vishay.com, PDDAsia@vishay.com, PDDEurope@vishay.com

Average Forward Current (A) New Product V3000C, VF3000C, VB3000C & VI3000C ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I R = 0 ma T J = 5 C V BR 05 (minimum) V Instantaneous forward voltage per diode () Reverse current per diode () Notes () Pulse test: 300 µs pulse width, % duty cycle () Pulse test: Pulse width 40 ms I F = 5 A I F = 0 A I F = 5 A I F = 5 A I F = 0 A I F = 5 A V R = 80 V V R = 00 V T J = 5 C T J = 5 C T J = 5 C T J = 5 C T J = 5 C T J = 5 C V F I R 0.69 0.770 0.84 0.56 0.594 0.648.4 3.8 5.3 6.0.0 0.7 60 V µa ma µa ma THERMAL CHARACTERISTICS (T A = 5 C unless otherwise noted) PARAMETER SYMBOL V3000C VF3000C VB3000C VI3000C UNIT Typical thermal resistance per diode R θjc.0 5.5.0.0 C/W ORDERING INFORMATION (Example) PACAGE PREFERRED P/N UNIT WEIGHT (g) PACAGE CODE BASE QUANTITY DELIVERY MODE TO0AB V3000CE3/4W.48 4W 50/tube Tube ITO0AB VF3000CE3/4W.75 4W 50/tube Tube TO63AB VB3000CE3/4W.39 4W 50/tube Tube TO63AB VB3000CE3/8W.39 8W 800/reel Tape and reel TO6AA VI3000CE3/4W.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T A = 5 C unless otherwise noted) 40 Resistive or Inductive Load 4 D = 0.5 D = 0.8 D = 0.3 30 0 0 VF3000C V(B,I)3000C Average Power Loss (W) 0 8 6 4 D = 0. D = 0. D =.0 T D = t p /T t p 0 0 5 50 75 00 5 50 75 Case Temperature ( C) Figure. Forward Derating Curve 0 0 4 6 8 0 4 6 8 Average Forward Current (A) Figure. Forward Power Loss Characteristics Per Diode PDDAmericas@vishay.com, PDDAsia@vishay.com, PDDEurope@vishay.com Document Number: 8904 Revision: 4Jun09

Junction Capacitance (pf) Transient Thermal Impedance ( C/W) Transient Thermal Impedance ( C/W) New Product V3000C, VF3000C, VB3000C & VI3000C Instantaneous Forward Current (A) 00 T A = 50 C T A = 5 C 0 T A = 5 C 0. 0. 0.4 0.6 0.8.0. Instantaneous Forward Voltage (V) 0 Junction to Case V(B,I)3000C 0. 0.0 0. 0 00 t Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (ma) 00 T J = 50 C 0 T J = 5 C T J = 00 C 0. T J = 5 C 0.0 0.00 0 0 30 40 50 60 70 80 90 00 Percent of Rated Peak Reverse Voltage (%) 0 Junction to Case VF3000C 0.0 0. 0 00 t Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode 0 000 000 00 0 0. 0 00 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 8904 Revision: 4Jun09 PDDAmericas@vishay.com, PDDAsia@vishay.com, PDDEurope@vishay.com 3

New Product V3000C, VF3000C, VB3000C & VI3000C PACAGE OUTLINE DIMENSIONS in inches (millimeters) 0.45 (0.54) MAX. 0.370 (9.40) 0.360 (9.4) TO0AB 0.54 (3.9) 0.48 (3.74) 0.3 (.87) 0.03 (.6) 0.85 (4.70) 0.75 (4.44) 0.055 (.39) 0.045 (.4) 45 REF. 0.404 (0.6) 0.384 (9.75) ITO0AB 0.076 (.93) REF. 0.076 (.93) REF. 0.40 (3.56) DIA. 0.5 (3.7) DIA. 0.90 (4.83) 0.70 (4.3) 0.0 (.79) 0.00 (.54) 0.35 (3.43) DIA. 0. (3.08) DIA. 0.60 (4.06) 0.40 (3.56) 0.057 (.45) 0.045 (.4) 0.05 (.67) 0.095 (.4) 3 0.635 (6.3) 0.65 (5.87) 0.035 (0.90) 0.08 (0.70) 0.04 (.65) 0.096 (.45) 0.05 (5.0) 0.95 (4.95) 0.45 (3.68) 0.35 (3.43).48 (9.6).8 (8.40) 0.560 (4.) 0.530 (3.46) 0.0 (0.56) 0.04 (0.36) 0.603 (5.3) 0.573 (4.55) 0.0 (.79) 0.00 (.54) 0.600 (5.4) 0.580 (4.73) 0.560 (4.) 0.530 (3.46) 0.057 (.45) 0.045 (.4) 0.05 (0.64) 0.05 (0.38) 0.05 (.67) 0.095 (.4) 3 0.67 (7.04) 0.65 (6.54) 0.9 (4.85) 0.7 (4.35) 0.057 (.45) 0.045 (.4) 0.035 (0.89) 0.05 (0.64) 0.05 (5.) 0.95 (4.95) 0.0 (.79) 0.00 (.54) 0.08 (0.7) 0.00 (0.5) TO6AA 0.4 (0.45) MAX. 0.85 (4.70) 0.75 (4.44) 30 (TYP.) (REF.) 0.50 (6.35) MIN. 0.055 (.40) 0.047 (.9) 0.055 (.40) 0.045 (.4) 0.950 (4.3) 0.90 (3.37) 3 0.50 (.95) 0.470 (.94) 0.40 (0.9) 0.38 (9.68) 0.60 (4.06) 0.40 (3.56) 0.0 (.79) 0.00 (.54) 0.057 (.45) 0.045 (.4) HEATSIN 0.560 (4.) 0.530 (3.46) 0.04 (.65) 0.096 (.45) 0.035 (0.90) 0.08 (0.70) 0.05 (5.0) 0.95 (4.95) 0.0 (0.56) 0.04 (0.35) TO63AB 0.4 (0.45) 0.380 (9.65) 0.45 (6.) MIN. 0.90 (4.83) 0.60 (4.06) 0.055 (.40) 0.045 (.4) Mounting Pad Layout 0.4 (0.66) MIN. 0.360 (9.4) 0.30 (8.3) 0.037 (0.940) 0.07 (0.686) 0.05 (.67) 0.095 (.4) 0.64 (5.85) 0.59 (5.00) 0.05 (5.0) 0.95 (4.95) 0.055 (.40) 0.047 (.9) 0 to 0.0 (0 to 0.54) 0.0 (.79) 0.090 (.9) 0.0 (0.53) 0.04 (0.36) 0.40 (3.56) 0.0 (.79) 0.670 (7.0) 0.59 (5.00) 0.08 (.03) MIN. 0.05 (.67) 0.095 (.4) 0.33 (8.38) MIN. 0.5 (3.8) MIN. 4 PDDAmericas@vishay.com, PDDAsia@vishay.com, PDDEurope@vishay.com Document Number: 8904 Revision: 4Jun09

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9000 Revision: 8Jul08