PN2222A TO 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 625mW(Tamb=25 O C) * Collector current ICM:.6 A * Collectorbase voltage V (BR)CBO : 75 V * Operating and storage junction temperature range T J,Tstg: 55 O C to+15 O C MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94VO rate flame retardant * Lead: MILSTD2E method 8C guaranteed * Mounting position: Any * Weight:.8 gram min..49 (12.5).18 (4.6).18 (4.6).14 (3.6) max..22 (.55) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 6 Hz, resistive or inductive load. For capacitive load, derate current by %..98 (2.5) Bottom Dimensions in inches and (millimeters) (TO92) MAXIMUM RATINGES ( @ T A = 25 O C unless otherwise noted) RATINGS SYMBOL VALUE UNITS Max. Steady State Power Dissipation (1) @TA=25 o C Derate above 25 O C PD 625 mw Max. Operating Temperature Range TJ 15 o C Storage Temperature Range TSTG 55 to +15 o C ELECTRICAL CHARACTERISTICS ( @ T A = 25 O C unless otherwise noted) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS Thermal Resistance Junction to Ambient R θja o C/W Notes : 1. Alumina=.4*.3*.24in.99.5% alumina 2. "Fully ROHS Compliant", "% Sn plating (Pbfree)". 112
ELECTRICAL CHARACTERISTICS (@TA=25 O C unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) CollectorBase Breakdown Voltage (I C = u Adc, I E = ) EmitterBase Breakdown Voltage (I E = u Adc, I C = ) V (BR)CEO 4 Vdc V (BR)CBO 75 Vdc V (BR)EBO 6. Vdc Collector Cutoff Current (V CE = 6Vdc,V EB(off) = 3.Vdc I CEX.1 Collector Cutoff Current (V CB = 6Vdc, I E = ) (V CB = 6Vdc, I E =, TA= 15 O C) I CBO.1 Emitter Cutoff Current (V EB = 3.Vdc, I C = ) I EBO.1 Base Cutoff Current (V CE = 6Vdc, V EB(off) = 3.Vdc I BL nadc ON CHARACTERISTICS DC Current Gain (I C = madc, V CE = Vdc, TA= 55 O C) (I C = 5mAdc, V CE = Vdc) (1) hfe 35 4 CollectorEmitter Saturation Voltage (1) (I C = 15mAdc, I B = 15mAdc) (I C = 5mAdc, I B = 5mAdc) BaseEmitter Saturation Voltage (1) (I C = 15mAdc, I B = 15mAdc) (I C = 5mAdc, I B = 5mAdc) SMALLSIGNAL CHARACTERISTICS V.3 CE(sat) 1. V BE(sat).6 1.2 2. Vdc Vdc CurrentGainBandwidth Product (2) (I C = madc, V CE = Vdc, f= MHz) Input Capacitance (V EB =.5Vdc, I C =, f= 1.MHz) f T 3 MHz C ibo 25 pf Input Impedance (IC= 1.mAdc, V CE =Vdc, f=1.khz) (I C = madc, V CE =Vdc, f=1.khz) Voltage Feedback Ratio (I C = 1.mAdc, V CE = Vdc, f= 1.kHz) (I C = madc, V CE =Vdc, f= 1.kHz) SmallSignal Current Gain (I C = 1.mAdc, V CE = Vdc, f= 1.kHz) (I C = madc, V CE = Vdc, f= 1.kHz) Output Admittance (I C = 1.mAdc, V CE = Vdc, f= 1.kHz) (I C = madc, V CE = Vdc, f= 1.kHz) 2. 8. ie.25 1.25 h re 8. 4. h fe 5 3 75 375 h oe 5. 35 25 kohms X 4 umhos Collector Base Time Constant (I E = madc, V CB = Vdc, f= 31.8MHz) rb,cc 15 ps Noise Figure (I C = u Adc, V CE = Vdc, R S = 1.kohms, f= 1.kHz) NF 4. db SWITCHING CHARACTERISTICS Delay Time Rise Time (V CC = 3Vdc, V BE(off) =.5Vdc, I C = 15mAdc, I B1 = 15mAdc) t d t r 25 ns Storage Time Fall Time (V CC = 3Vdc, I C = 15mAdc, I B1 = I B2 = 15mAdc) t s t f 225 6 ns NOTES : 1. Pulse Test: Pulse Width<3ms,Duty Cycle<2.% 2. f T is defined as the frequency at which hfe extrapolates to unity
RATING AND CHARACTERISTICS CURVES ( PN2222A ) hfe, DCCURRENT GAIN VCE, COLLECTOREMITTER VOLTAGE (V) 7 5 3 7 5 3 1.2.3.5.7 1. 2. 3. 5. 7. 3 5 7 3 5 7 1.k 1..8.6.4.2 I C,CCLLECTOR CURRENT (ma) Figure 1. DC Current Gain.5.1.2.3.5.1.2.3.5 1. 2. 3. 5. 3 5 I B,BASE CURRENT (ma) Figure 2. Collector Saturation Region t,time (ns) 7 5 3 7. 5. 3. 2. 5. 7. 3 5 7 3 5 I C,CLLECTOR CURRENT (ma) Figure 3.TurnOn Time I C /I B = t r @V CC =3V t d @V EB (off)=2.v t d @V EB (off)= t,time (ns) 5 3 7 5 3 7. 5. t' s =t s 1/8t f t f 5. 7. 3 5 7 3 5 I C,CLLECTOR CURRENT (ma) Figure 4.TurnOff Time V CC =3V I C /I B = I B1=I B2
RATING AND CHARACTERISTICS CURVES ( PN2222A ) NT, NOISE FIGURE (db) 8. 6. 4. 2. I C =1.mA,RS=15Ω 5uA,RS=Ω ua,rs=2.kω 5uA,RS=4.KΩ R S =OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (db) 8. 6. 4. 2. f=1.khz I C =5uA ua 5uA 1.mA CAPACITANCE (PF).1.2.5.1.2.5 1. 2. 5. 5 3 7. 5. 3. 2..1.2.3.5.7 1. 2. 3. 5. 7. 3 5 REVERSE VOLTAGE (VOLTS) Figure 7.Capacitances T, CURRENTGAINBANDWIDTHPRODUCT (MHz) 5 5 1.k 2.k 5.k k k 5k k f, FREQUENCY (KHz) R S,SOURCE RESISTANCE (OHMS) Figure 5.Frequency Effects Ceb C Cb 5 3 7 Figure 6.Source Resistance Effects VCE=V TJ=25 O C 5 1. 2. 3. 5. 7. 3 5 7 Figure 8.CurruntGain Bandwidth Product 1. +.5 V, VOLTAGE (V).8 VBE(sat)@IC/IB= 1.V.6 VBE(on)@VCE=V.4.2 VCE(sat)@IC/IB=.1.2.5 1. 2. 5. 5 5 1.k COEFFICIENT (mv/ O C) RθVC for VCE(sat).5 1. 1.5 2. RθVB for VBE 2.5.1.2.5 1. 2. 5. 5 5 Figure 9."On" Voltages Figure.Temperature Coefficients
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