Product Guide Microwave Semiconductors

Transcription

1 Product Guide 13 Microwave Semiconductors

2 C O N T E N T S Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs... 3 C-band Internally Matched Power GaAs FETs/GaN HEMTs... 4 X and Ku-band Internally Matched Power GaAs FETs/GaN HEMTs... 5 Specifications Table GaN HEMTs C, X and Ku-band Internally Matched Power GaN HEMTs... 6, 7 GaAs FETs High Efficiency and High Gain C-band Internally Matched Power GaAs FETs...8, C-band Internally Matched Power GaAs FETs... 8,,, 11 X and Ku-band Internally Matched Power GaAs FETs... 12, 13, 14, GaAs MMICs L, S, C, X and Ku-band GaAs MMICs...16, 17 Partially Matched Power GaAs FETs L and S-band Partially Matched Power GaAs FETs...16, 17 Package Code and Outlines...18, 1,, 21 2

3 GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 4 TPM- TPM11- TPM2626- TPM Output Power at 1dB Gain Compression (W) TMD125-3 TPM2828- TMD08-4 TMD58-2 TMD0507-2A TMD05-2 TMD TMD TMD TMD1414-2C 42 Output Power at 1dB Gain Compression Frequency : MMIC : P 2dB 3

4 C-band Internally Matched Power GaAs FETs/GaN HEMTs Pout vs. Frequency Map 125 NEW TGI564-1L TGI7785-1L TIM5-SL TIM564-SL TIM564-SL-422 TIM5-SL TIM717-SL TIM64-SL TIM7785-ULA TIM4450-SL TIM SL TIM42-45SL TIM42-45SL-341 TIM564-SL TIM64-45SL TIM564-45SL TIM5-45SL TIM717-45SL TGI L TIM SL 48 Output Power at 1dB Gain Compression (W) TIM4450-SL TIM42-SL TIM42-SL-341 TIM42-16UL TIM UL TIM34-16SL TIM42-16SL-341 TIM34-12UL TIM42-12UL TIM UL TIM5053-SL TIM SL TIM564-SLA TIM5867-UL TIM564-UL TIM64-16EL TIM64-16UL TIM564-16SL-422 TIM5-16UL TIM5-16EL TIM5867-UL TIM564-12UL TIM5-SL TIM564-SLA-422 TIM64-12UL TIM64-SL TIM64-UL TIM717-UL TIM717-16EL TIM717-16UL TIM564-16UL TIM564-16EL TIM717-SL TIM7785-SL TIM7785-UL TGI L TIM EL TIM UL TIM717-12UL TIM UL Output Power at 1dB Gain Compression TIM5-8UL TIM5053-8SL TIM5867-8UL TIM64-8UL TIM717-8UL TIM42-8SL-341 TIM42-8UL TIM564-8UL TIM7785-8UL TIM4450-8UL TIM564-6UL TIM64-6UL TIM717-6UL TIM7785-6UL 5 TIM564-4SL-422 TIM5-4UL TIM717-4UL TIM7785-4UL TIM42-4SL-341 TIM42-4UL TIM4450-4UL TIM5053-4SL TIM564-4UL TIM64-4UL Frequency : P out 4

5 X and Ku-band Internally Matched Power GaAs FETs/GaN HEMTs Pout vs. Frequency Map 50 TGI TGI0-50 TGI L TGI L 47 TIM1213-L TIM1314-L TIM86-45 TGI L 44 Output Power at 1dB Gain Compression (W) TIM0-L TIM856- TIM856-8 TIM0-8 TIM0- TIM11-L TIM11-L TIM11-8L TIM11-8UL TIM11-8ULA TIM1112-L TIM L TIM1213-L TIM1213-L TIM TIM1213-8L TIM1213-8ULA TIM1314-L TIM L-252 TIM L TIM1414-L TIM TIM1314-UL TIM1414-L TIM1414-8L TIM TIM TIM Output Power at 1dB Gain Compression TIM0-5 TIM11-5L TIM TIM1112-4UL TIM TIM1414-5L TIM856-4 TIM0-4 TIM11-4L TIM11-4UL TIM1213-4L TIM1213-4UL TIM1414-4UL TIM1414-4LA TIM TIM11-2UL TIM856-2 TIM0-2 TIM11-2L TIM TIM TIM TIM1213-2L TIM1414-2L Frequency : P out 5

6 GaN HEMTs C-band Internally Matched Power GaN HEMTs set P out G L (@P in = dbm) G MIN. MIN. IM 3 (dbc) add (%) 7-AA06A 7-AA04A ELECTRICAL CHARACTERISTICS () NEW TGI564-1L AA06A 7.7- TGI L / AA04A 7.7- TGI L / AA04A 7.7- TGI7785-1L AA06A : Tch = channel temperature case temperature, formula: Tch = ( + P in P out ) R th(c-c) : Gain flatness : Pin = 3 dbm, : Pin =.0 dbm, : Pin = 43.0 dbm, : Pin = 4 dbm MIN. P carrier level V GS P T (Tc = 25 C) (W) R th(c-c) / ( C/W) Tch V GSoff = 5 V X-band Internally Matched Power GaN HEMTs set P out (@P in = 4 dbm) G L (@P in = dbm) (@P in = 4 dbm) add (%) MIN. MIN. V GS P T (Tc = 25 C) (W) R th(c-c) / ( C/W) Tch ELECTRICAL CHARACTERISTICS () V GSoff = 5 V -.6 TGI / AA04A.5-.5 TGI / AA04A : Tch = channel temperature case temperature, formula: Tch = ( + P in P out) R th(c-c) Ku-band Internally Matched Power GaN HEMTs set P out G L (@P in = dbm) IM 3 (dbc) MIN. MIN. MIN. G add (%) P carrier level V GS P T (Tc = 25 C) (W) R th(c-c) / ( C/W) Tch ELECTRICAL CHARACTERISTICS () V GSoff = 5 V TGI L / AA07A TGI L / AA07A 1-1 TGI L / AA04A : Tch = channel temperature case temperature, formula: Tch = ( + P in P out ) R th(c-c) : Gain flatness : Pin = 3 dbm, : Pin = 4 dbm 6 7

7 High Efficiency and High Gain C-band Internally Matched Power GaAs FETs 7-AA02C set P 1dB G 1dB MIN. MIN. MIN. G add IM 3 (%) (dbc) P carrier level V GS P T R th(c-c) (Tc = 25 C) / (W) ( C/W) Tch ELECTRICAL CHARACTERISTICS () V GSoff = 3 V TIM5-16EL TIM564-16EL TIM64-16EL TIM717-16EL TIM EL : Tch = channel temperature case temperature, formula: Tch = ( + P in P 1dB ) R th(c-c) : Gain flatness C-band Internally Matched Power GaAs FETs (1/2) set P 1dB G 1dB MIN. MIN. MIN. G add IM 3 (%) (dbc) P carrier level V GS P T R th(c-c) (Tc = 25 C) / (W) ( C/W) Tch ELECTRICAL CHARACTERISTICS () V GSoff = 3 V TIM42-4SL / TIM42-8SL / TIM42-16SL / TIM42-SL / 0 TIM42-45SL / TIM34-12UL TIM34-16SL / / TIM42-4UL / TIM42-8UL /2.5 TIM42-12UL / TIM42-16UL TIM42-SL / 0 TIM42-SL / 1 TIM42-45SL / TIM4450-4UL / TIM4450-8UL /2.5 TIM UL / - TIM UL TIM4450-SL / 1 TIM SL / TIM4450-SL TIM5053-4SL / -5.3 TIM5053-8SL TIM SL /2.5 /1.5 TIM5053-SL / 1 TIM5-4UL / TIM5-8UL /2.5 TIM5-16UL TIM5-SL / 1 TIM5-45SL / TIM5-SL TIM5-SL / AA02C : Tch = channel temperature case temperature, formula: Tch = ( + P in P 1dB ) R th(c-c) : Gain flatness 8

8 C-band Internally Matched Power GaAs FETs (2/2) 7-AA02C ELECTRICAL CHARACTERISTICS () set P 1dB G 1dB MIN. MIN. MIN. G add IM 3 (%) (dbc) P carrier level V GS P T (Tc = 25 C) (W) R th(c-c) / ( C/W) Tch V GSoff = 3 V TIM564-4UL / TIM564-6UL /3.8 TIM564-8UL /2.5 TIM564-12UL / TIM564-16UL TIM564-UL / TIM564-SLA / 1 TIM564-45SL / TIM564-SL TIM564-SL / AA02C TIM564-4SL / TIM5867-8UL /2.5 TIM5867-UL / TIM564-16SL /1.5 TIM5867-UL / TIM564-SLA / 1 TIM564-SL TIM64-4UL / TIM64-6UL /3.8 TIM64-8UL /2.5 TIM64-12UL / TIM64-16UL TIM64-UL / TIM64-SL / 1 TIM64-45SL / TIM64-SL TIM717-4UL / TIM717-6UL /3.8 TIM717-8UL /2.5 TIM717-12UL / TIM717-16UL TIM717-UL / TIM717-SL / 1 TIM717-45SL / TIM717-SL TIM7785-4UL / TIM7785-6UL /3.8 TIM7785-8UL /2.5 TIM UL / 7.7- TIM UL TIM7785-UL / TIM7785-SL / 1 TIM SL / TIM7785-ULA / AA0A : Tch = channel temperature case temperature, formula: Tch = ( + P in P 1dB) R th(c-c) : Gain flatness 11

9 X and Ku-band Internally Matched Power GaAs FETs (1/2) 2-D1B 7-AA03A set P 1dB G 1dB MIN. MIN. MIN. G add (%) IM 3 (dbc) P carrier level V GS PT (Tc = 25 C) (W) Rth(C-C) / ( C/W) Tch ELECTRICAL CHARACTERISTICS () V GSoff = 3 V TIM / 2-D1B -.6 TIM856-4 TIM /2. 2.5/ 1 2-D1B TIM / TIM / 7-AA03A TIM / 2-D1B TIM /2. 2-D1B.5-.5 TIM0-5 TIM / 1 2-D1B TIM / TIM0-L / TIM11-2L / 2-D1B TIM11-2UL / 2-D1B TIM11-4L /2. 2-D1B TIM11-4UL /3.8 2-D1B.7-1 TIM11-5L TIM11-8L / 1 2-D1B TIM11-8UL D1B TIM11-8ULA TIM11-L / TIM11-L / TIM / 2-D1B TIM /2. 2-D1B TIM1112-4UL /3.8 2-D1B TIM / 1 TIM1112-L / TIM1213-2L / 2-D1B TIM1213-4L /2. 2-D1B TIM1213-4UL /3.8 2-D1B TIM1213-8L / TIM1213-8ULA TIM1213-L / TIM1213-L / TIM L / 2.8 TIM1213-L / 7-AA03A : Tch = channel temperature case temperature, formula: Tch = ( + P in P 1dB ) R th(c-c) : Gain flatness 12 13

10 X and Ku-band Internally Matched Power GaAs FETs (2/2) 2-D1B 7-AA03A ELECTRICAL CHARACTERISTICS () P1dB G1dB G add IM 3 P T Rth(C-C) set V P DS V GS Tch V (%) (dbc) GSoff (Tc = 25 C) / carrier level (ma) MIN. MIN. MIN. (W) ( = 3 V TIM1414-2L TIM1414-4LA TIM1414-4UL TIM1414-5L TIM TIM1414-8L TIM1414-L TIM1414-L TIM L TIM TIM TIM TIM TIM TIM1314-L TIM TIM1314-UL TIM L-252 TIM1314-L TIM / /2. / / 2.5/ 2.3/ / /2. 2.5/ 2.5/ 2.5/ 2.3/ / / D1B 2-D1B 2-D1B 2-D1B 2-D1B 2-D1B 2-D1B 2-D1B 2-D1B 2-D1B 2-D1B 7-AA03A 2-D1B : Tch = channel temperature case temperature, formula: Tch = ( + P in P 1dB ) R th(c-c) : Gain flatness 14

11 L and S-band GaAs MMIC V DD I DD set P 1dB MIN. G 1dB MIN. I DD G 2-16G6A V DD V GG Pin Tf 7-BA06A 2-11E1A/B 7-BAA 2-E1D/F 7-BA25A TMD to + 7-BA06A C-band GaAs MMICs TMD05-2 V DD V GG P 1dB MIN G 1dB MIN. 2 I DD 1. G IM 3 (dbc) MIN. P carrier level V DD V GG Pin 25 Tf to E1A TMD0507-2A to E1A TMD to + 2-E1F 7.1- TMD TMD to + to E1A 2-11E1B TMD08-4 I DD set = 1. A to + 7-BA25A X and Ku-band GaAs MMICs.5-1 TMD V DD V GG P 1dB MIN G 1dB MIN I DD G 2.5 IM 3 (dbc) MIN. P carrier level 1 V DD V GG Pin Tf to + 2-E1D TMD1414-2C to BAA L and S-band Partially Matched Power GaAs FETs 1. TPM11-12 set P 1dB MIN. 4 4 G 1dB MIN add (%) 0 V GS 2 P T (Tc = 25 C) (W) 18 R th(c-c) / ( C/W) Tch ELECTRICAL CHARACTERISTICS () V GSoff = 3 V G6A 2.3 TPM TPM : Tch = channel temperature case temperature, formula: Tch = ( + P in P 1dB ) R th(c-c) TPM2828- TPM set.0 P 2dB MIN G 2dB MIN add (%) V GS 2 P T (Tc = 25 C) (W) R th(c-c) / ( C/W) 4.8/3.2 Tch ELECTRICAL CHARACTERISTICS () V GSoff 1. = 3 V G6A 2-16G6A : Tch = channel temperature case temperature, formula: Tch = ( + P in P 2dB ) R th(c-c) 16 17

12 Package Code and Outlines 2-D1B Unit in mm 4-R MIN MIN R MIN. 2.5 MIN G6A 4-C MIN. 4-C MIN MIN MIN

13 7-AA02C Unit in mm C MIN MIN C MIN MIN AA03A 7-AA04A/7-AA07A 4-R MIN. 4-R MIN

14 Package Code and Outlines /7-AA0A 7-AA06A Unit in mm 4-C MIN MIN. 4-C MIN MIN AA0A BA25A C R1.2 3-R R MIN MIN : VGG : N.C. : RFin : N.C. : V GG : V DD : N.C. : RFout : N.C. : V DD : Pin #1 tab

15 2-E1D/F 2-11E1A/B Unit in mm 4-C1.5 INDEX MARK C2 INDEX MARK R0.5 7-R E1D (TMD ) No Connection (Grounded) : RF Input : V GG : No Connection (Open) : V DD : RF Output : Orientation Tab 2-E1F (TMD58-2) No Connection : V GG : RF Intput : V DD : RF Output : Orientation Tab 2-11E1A (TMD05-2, A, ) : V DD1 : RF Input : V DD2 : V GG : V DD3 : RF Output : No Connection : V DD3 2-11E1B (TMD7185-2) : No Connection : RFInput : No Connection : V GG : No Connection : RF Output : No Connection : V DD 7-BA06A 7-BAA 4-C1.5 INDEX MARK C1.5 INDEX MARK R0.5 4-R : RF Input : V GG No Connection (Grounded) : V DD : RF Output : Orientation Tab : V GG : RF Input : V DD : RF Output : Vdet

16 22 Note

17 Note

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