N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Drain1. Source1. Drain2.
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1 HITFET BTS 34G Features Logic Level Input Input Protection (ESD) Thermal shutdown with auto restart Green product (RoHS compliant) Product Summary Drain source voltage V DS 4 V Onstate resistance R DS(on) m Nominal load current I D(Nom).3 Clamping energy E S 5 mj Overload protection Short circuit protection Overvoltage protection Current limitation nalog driving possible pplication ll kinds of resistive, inductive and capacitive loads in switching or linear applications µc compatible power switch for V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M HITFET Drain Pin In Logic Channel Pin 7and 8 Pin Source Drain Pin 4 In Logic Channel Pin 5and 6 Pin 3 Source Complete product spectrum and additional information Datasheet Rev..3, 76
2 HITFET BTS 34G Pin Description Pin Symbol Function S Source Channel IN Input Channel 3 S Source Channel 4 IN Input Channel 5 D Drain Channel 6 D Drain Channel 7 D Drain Channel 8 D Drain Channel Pin Configuration (Top view) S 8 D IN 7 D S 3 6 D IN 4 5 D PG DSO85 HITFET Drain Pin 7, 8 Current Limitation Overvoltage Protection Vbb Pin In GateDriving Unit M ESD Overload Protection Over temperature Protection Short circuit Protection Pin Source Drain Pin 5, 6 Current Limitation Overvoltage Protection Vbb Pin 4 In GateDriving Unit M ESD Overload Protection Over temperature Protection Short circuit Protection Pin 3 Source Datasheet Rev..3, 76
3 HITFET BTS 34G Maximum Ratings at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Drain source voltage V DS 4 V Drain source voltage for short circuit protection ) V DS(SC) 8 T j = C Continuous input current ) I IN m.v V IN V V IN <.V or V IN > V no limit I IN Operating temperature T j C Storage temperature T stg Power dissipation )5) T = 85 C Unclamped single pulse inductive energy ) each channel Load dump protection V )3) LoadDump = V + V S V IN = and V, t d = 4 ms, R I =, R L = 9, V = 3.5 V Electrostatic discharge voltage ) (Human Body Model) according to Jedec norm EI/JESD4B, Section 4 P tot.8 W E S 5 mj V LD 5 V V ESD kv Thermal resistance junction ambient: per 6 cm cooling area ) one channel on both channels on R thj 6 K/W not subject to production test, specified by design Device on 5mm*5mm*.5mm epoxy PCB FR4 with 6cm (one layer, 7µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3 VLoaddump is setup without the DUT connected to the generator per ISO 7637 and DIN not subject to production test, calculated by R THJ and R ds(on) Datasheet 3 Rev..3, 76
4 HITFET BTS 34G Electrical Characteristics Parameter Symbol Values Unit at T j = 5 C, unless otherwise specified min. typ. max. Characteristics Drain source clamp voltage V DS(Z) 4 55 V T j = , I D = m Offstate drain current Tj = C I DSS.5 µ V DS = 3 V, V IN = V Input threshold voltage V IN(th) V I D =.3 m, T j = 5 C I D =.3 m, T j = 5 C On state input current I IN(on) 3 µ Onstate resistance R DS(on) m V IN = 5 V, I D =.4, T j = 5 C V IN = 5 V, I D =.4, T j = 5 C Onstate resistance R DS(on) V IN = V, I D =.4, T j = 5 C V IN = V, I D =.4, T j = 5 C Nominal load current per channel 5) I D(Nom) V DS =.5 V, T j < 5 C, V IN = V, T = 85 C, one channel on both channels on Current limit (active if V DS >.5 V) ) V IN = V, V DS = V, t m = µs I D(lim) not subject to production test, specified by design Device switched on into existing short circuit (see diagram Determination of ID(lim) ). If the device is in on cond and a short circuit occurs, these values might be exceeded for max. 5 µs. 5 not subject to production test, calculated by R THJ and R ds(on) Datasheet 4 Rev..3, 76
5 HITFET BTS 34G Electrical Characteristics Parameter Symbol Values Unit at T j = 5 C, unless otherwise specified min. typ. max. Dynamic Characteristics Turnon time V IN to 9% I D : R L = 4.7, V IN = to V, V bb = V Turnoff time V IN to % I D : R L = 4.7, V IN = to V, V bb = V Slew rate on 7 to 5% V bb : R L = 4.7, V IN = to V, V bb = V Slew rate off 5 to 7% V bb : R L = 4.7, V IN = to V, V bb = V t on 45 µs t off 6 dv DS /dt on.4.5 V/µs dv DS /dt off.6.5 Protection Functions ) Thermal overload trip temperature T jt 5 75 C Thermal hysteresis ) T jt K Input current protection mode I IN(Prot) µ Input current protection mode I IN(Prot) 4 3 T j = 5 C Unclamped single pulse inductive energy ) each channel I D =.9, T j = 5 C, V bb = V E S 5 mj Inverse Diode Inverse diode forward voltage I F = 7, t m = 5 µs, V IN = V, t P = 3 µs V SD V Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. not subject to production test, specified by design Datasheet 5 Rev..3, 76
6 HITFET BTS 34G Block diagram Terms Inductive and overvoltage output clamp R L V Z D V IN I IN IN HITFET D S I D VDS V bb S HITFET Input circuit (ESD protection) Short circuit behaviour Input Gate Drive VIN Source/ Ground IIN IDS Tj Datasheet 6 Rev..3, 76
7 HITFET BTS 34G Overall maximum allowable power dissipation; P tot = f(t S ) resp. P tot = f(t R thj =8 K/W W 3 Onstate resistance R ON = f(t j ); I D =.4; V IN =V m 5 4 max. Ptot T S T RDS(on) 35 3 typ C 5 T j 3 Onstate resistance R ON = f(t j ); I D =.4; V IN =5V C 75 T j 4 Typ. input threshold voltage V IN(th) = f(t j ); I D =.5 m; V DS = V m 5 max. V 4.6 RDS(on) 35 3 typ. VGS(th) C 75 T j C 5 T j Datasheet 7 Rev..3, 76
8 HITFET BTS 34G 5 Typ. transfer characteristics I D =f(v IN ); V DS =V; T Jstart =5 C 6 Typ. short circuit current I D(lim) = f(tj); V DS =V Parameter: V IN 8 8 ID 6 5 ID(lim) 7 6 Vin=V V V V IN 7 Typ. output characteristics I D =f(v DS ); T Jstart =5 C Parameter: V IN C 75 T j 8 Typ. offstate drain current I DSS = f(t j ) 7V Vin=V µ max. ID V 5V 4V IDSS V typ. 3 4 V 6 V DS C 75 T j Datasheet 8 Rev..3, 76
9 HITFET BTS 34G 9 Typ. overload current I D(lim) = f(t), V bb = V, no heatsink Parameter: T jstart ID(lim) 4 C 5 C 8 85 C 6 Typ. transient thermal impedance Z thj =f(t p 6 cm cooling area Parameter: D=t p /T ; one channel on ZthJ K/W 4 5 C D=.5 D=. D=. D=.5 D=. D=. D= ms 4 Determination of I D(lim) I D(lim) = f(t); t m = µs Parameter: T Jstart t Typ. transient thermal impedance Z thj =f(t p 6 cm cooling area Parameter: D=t p /T ; both channels on 3 K/W t P s ID(lim) 8 4 C 5 C ZthJ C 85 C D=.5 D=. D=. D=.5 D=. D=. D= ms.55 t s t P Datasheet 9 Rev..3, 76
10 HITFET BTS 34G Package Outlines Package Outlines ).6.75±.7 (.45).75 MX... M B 8x B.35 x 45 ) 4. C 6 ± ±.5 8 MX.. M C 8x ) 5. Index Marking Figure ) Does not include plastic or metal protrusion of.5 max. per side ) Lead width can be.6 max. in dambar area GPS8 PGDSO85 (Plastic Green Dual Small Outline Package) Green Product (RoHS compliant) To meet the worldwide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHSCompliant (i.e Pbfree finish on leads and suitable for Pbfree soldering according to IPC/JEDEC JSTD). Please specify the package needed (e.g. green package) when placing an order For further information on alternative packages, please visit our website: Dimensions in mm Datasheet Rev..3, 76
11 HITFET BTS 34G Revision History Revision History Version Date Changes Rev updated package drawing of green package Rev released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings EC icon added RoHS icon added Green product (RoHScompliant) added to the feature list Package information updated to green package naming Green explanation added Rev released production version Datasheet Rev..3, 76
12 Edition 76 Published by Infineon Technologies G 876 Munich, Germany Infineon Technologies G 7. ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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