ELECTRICAL CAPACITANCE TOMOGRAPH
|
|
- Gwendolyn Wells
- 6 years ago
- Views:
Transcription
1 2 nd Forum Białystok-Białowieża ELECTRICAL CAPACITANCE TOMOGRAPH Nuclear and Medical Electronics Division Institute of Radioeletronics Warsaw University of Technology Projekt współfinansowany przez Unię Europejską w ramach Europejskiego Funduszu Społecznego
2 Tomography Tomography process consist of: aquisition of tomography data (projections) by measurement of radiation propagation through the object, creating images from projections applying tomographic reconstruction algorithms. The quality of images depands on several factors: application of the radiation or field, detection of the signals, measurement and processing of analog signals (projections), reconstruction images from projections, visualisation.
3 Tomography process in Electrical Capacitance Tomography - ECT Tomography process in ECT consist of: applying electrical signal on transmitting electrode; receiving charges from all receiving electrodes; amplifying analog signals, converting to digital data and transmitting to computer; image reconstruction from projections; visualisation and archiving results.
4 Charge-Discharge method in ECT Charging C X RFB Q FB = U T C X U T U A = + U T 0 V Virtual Ground C FB U A S1 S3 U T S2 C X S4 Q x = + U T C x A1 U 1 = U T C X / C FB Discharging C X V1 - f U T Cx Rf V2 f U T Cx Rf U A = U T 0 V Virtual Ground Q FB = + U T C X R FB U A S1 S3 C FB S2 C X S4 Q X = U T C X A2 U 2 = + U T C X / C FB
5 Electrical Capacitance Tomograph ET1 ET1-12 elctrode modular ECT - (May 2002)
6 ET1/ET3 Flow Chart
7 ET3-32 channel ECT Jednostka sterująca + ADC Karty pomiarowe (sygnałowe) Płyta - matka Stages of ET3 mountage
8 Disprsion and dynamic of measured signals 0,6 Pojemność (pf) 0,4 0, Numer elektrody We have manage in ECT with very small capacitance and dispersion of them is from ~0.005 pf (few femtofarad!) to 0.5 pf for different couple of electrod.
9 Signal Card Flow Chart +12 V 3 x ADG409 R FB MUX R FB MUX TK1 2 x ADG442 EN RS3 RS1 RS0 EN RS3 RS1 RS0 2 x PGA206 PROG. GAIN PROG. GAIN TK3 RK3 RK4 R FB MUX R FB MUX KK3 KK2 KK1 KK0 EN EN +12 V RS2 RS1 RS0 C FB MUX RS2 RS1 RS0 C FB MUX TK2 EN EN CS1 CS0 CS1 CS0 TK4 RK1 RK2 AD8620 EL 1 EL 2 Input from Electrodes TK1..TK4 RK1..RK4 RS0..RS3 CS0..CS1 KK0.. KK3 ANALOG OUT Output to MUX & ADC CONTROL LOGIC EPM7064A TA TB RA RB clocks SA SB SC SD selects MD0.. MD4 data Adjustable signal channel for capacitance tomograph. Local control PLD reduces the number of external connections.
10 Adjustable signal channel printed circuit board
11 Output from ET3 signal card a), b) - Output from dual, fixed charge amplifier visible U characteristic c), d) - Output from dual charge amplifier circuit with adjustable parameters Significant improvement in signal to ripple and noise ratio is evident!
12 Runtime mode of ET3 Flexibility and user hardware configuration of ET3 is possible by applying PLD. Depends on number of electrods run-time mode of ET3 is: 1 x 8 1 x 12 1 x 16 1 x 20 1 x 24 1 x 32 2 x 8 2 x 12 2 x 16 4 x 8
13 RESULTS 16 electrode probe, 9 elements phantom (plexi rods diam. 20 mm) Modified pictures Normalised distance from measured data LBP meth. 100%
14 RESULTS 10 th elements phantom (8 plexi diam. 20 mm) Obrazy po rekonstrukcji Normalised distance from measured data LBP meth. 100%
15 RESULTS 16 electrode probe, 10 elements phantom (plexi rods diam. 20 mm) Modified pictures Normalised distance from measured data LBP meth. 100%
16 Two Plane version of ET3 2x12 electrod A B A B sonda 2 płaszczyznowa z granulatem PCV
17 Electrical capacitance tomography system in Centre for Bulk Solids and Particulate Technologies, University of Newcastle, Australia Data Acquisition System (DAS) - Constructed by the ECT design team located at the Institute of Radio Electronics, Warsaw University of Technology, Poland Sensors Control Computer BULK EUROPE - Prague
18 ECT Attachment BULK EUROPE - Prague
19 Velocity profile test 1 Pixel number - Average velocity across the pulse -Distinct Velocity profile (max 3.5 m/s) Velocity [m/s] Pixel number Mˆ Solids flow rate at each pixel T 1 = ρ sv( i, j, t) α s ( i, j, t i j t T s ) 0 M s = 0.31 kg/s (70% total mass flow kg/s) BULK EUROPE - Prague
20 Process Tomography in Computer Engineering Department Technical University of Lodz
21 3D IMAGING of plexi PHANTOMS in Computer Engineering Department Technical University of Lodz Chair prof. Dominik Sankowski
22 TOMOGRAF IREna
23 One-Channel ECT TOMOGRAPH IREna
24 Two ET3 tomographs with 2x12 electrod sensor and 1x32 electrod sensor
25 ET3 and three plane sensor (3x12 electrod) for flowing parameters measurement Installation for investigation of gas-liquid flow
26 Publications Jacek Mirkowski, Waldemar T. Smolik, Member, IEEE, M. Yang, T. Olszewski, Roman Szabatin, Dariusz S. Radomski, and Wuqiang Q. Yang, Senior Member, IEEE, A New Forward-Problem Solver Based on a Capacitor-Mesh Model for Electrical Capacitance Tomograph, IEEE Transactions on Instrumentation and Measurement, vol.57, No.5, May 2008, T.Olszewski, W.Smolik, J. Mirkowski R.Szabatin, D.Radomski, P.Brzeski, Electrical Capacitance Tomograph ET3, Elektronika nr4/2008, K.Williams, T. Olszewski, M. Jones and B. Singh, Electrical Capacitance Tomography of Dense Phase Pneumatic Conveying of Flyash Powder, Proceedings, BulkEurope 2008, Prague, P. Czarnecki, Hardware Implementation Of Iterative Image Reconstruction Algorithm For Capacitance Tomography, Proceedings 5th International Symposium on Process Tomography, , Zakopane B. Radzik, R. Szabatin, J Mirkowski, W. Smolik, Tomasz Olszewski, Elektryczny tomograf pojemnościowy IREna, Elektronika 2009 (przyjęty do druku) P.Czarnecki, Ł. Dańko, R. Szabatin, One channel capacitance tomography with hardware implementation of image reconstruction algorithm, Proceedings, 2009 IEEE Workshop on Imaging Systems and Techniques (IST2009), Shenzen, China (artykuł przyjęty na konferencję) Projekt współfinansowany przez Unię Europejską w ramach Europejskiego Funduszu Społecznego
Stray Capacitance Compensation for Non Stray immune ECT systems
Stray apacitance ompensation for Non Stray immune ET systems Darius Styra, Laurent Babout, Dominik Sankowski omputer Engineering Department, Technical University of Lodz, Poland, Styra@kis.p.lodz.pl ABSTRAT
More informationTHREE-DIMENSIONAL NONLINEAR INVERSION OF ELECTRICAL CAPACITANCE TOMOGRAPHY DATA USING A COMPLETE SENSOR MODEL
Progress In Electromagnetics Research, PIER 100, 219 234, 2010 THREE-DIMENSIONAL NONLINEAR INVERSION OF ELECTRICAL CAPACITANCE TOMOGRAPHY DATA USING A COMPLETE SENSOR MODEL R. Banasiak, R. Wajman, and
More informationElectrical Capacitance Tomography
1 Electrical Capacitance Tomography Ajeesh Sunny, Bify Baby, Jackson Ouseph, Manjunarayanan.N.S, Sampreeth John and Mr. Jis Paul Abstract Electrical capacitance tomography (ECT) is a method for determination
More informationJurnal Teknologi. Review of Electrostatic Sensor Applications. Full paper. Teimour Tajdari, Mohd Fuaad Rahmat * 1.0 INTRODUCTION
Jurnal Teknologi Full paper Review of Electrostatic Sensor Applications Teimour Tajdari, Mohd Fuaad Rahmat * Department of Control and Instrumentation Engineering, Faculty of Electrical Engineering, Universiti
More informationFeasibility Study of Capacitive Tomography
Feasibility Study of apacitive Tomography Tony Warren Southern Polytechnic State University 1100 South Marietta Parkway Marietta, GA 30060 678-915-7269 twarren@spsu.edu Daren R. Wilcox Southern Polytechnic
More informationMonte Carlo simulations of neutron and photon radiation fields at the PF 24 plasma focus device
The enryk Niewodniczański INSTITUTE F NULEAR PYSIS Polish Academy of Sciences ul. Radzikowskiego 152, 31-342 Kraków, Poland www.ifj.edu.pl/publ/reports/2016/ Kraków, April 2016 Report No. 2091/AP Monte
More informationPlasma Potential Determination in RF Capacitively Coupled Plasma by Measuring Electrode Voltage. Nagoya university Hironao Shimoeda
Plasma Potential Determination in RF Capacitively Coupled Plasma by Measuring Electrode Voltage. Nagoya university Hironao Shimoeda Introduction The University of Texas at Dallas International Center for
More informationTemperature Waves in SRF Research
4th International Particle Accelerator Conference Shanghai China May 12 17, 2013 Temperature Waves in SRF Research Nicholas Valles, Andrei Ganshin, Don Hartill, Georg Hoffstaetter, Xiao Mi and Eric Smith
More informationDATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 1995 Apr 25 Philips Semiconductors FEATURES High forward transfer admittance Short channel transistor with high forward transfer
More informationLiquid Film Thickness Estimation using Electrical Capacitance Tomography
0.2478/msr-204-0002 MASURMNT SIN RVIW, Volume 4, No., 204 Liquid Film Thickness stimation using lectrical apacitance Tomography Ziqiang ui, hengyi Yang, Benyuan Sun, Huaxiang Wang Tianin Key Laboratory
More informationNPSAT1 Solar Cell Measurement System
NPSAT1 Solar Cell Measurement System Presented by Captain John Salmon, USMC Space Systems Academic Group 777 Dyer Rd., Bldg. 233 Code (SP/Sd), Rm. 125 Monterey, CA 93943 (831) 656-7521 Topics NPSAT1 Overview
More informationVMS-GeoMil. Background
Background When using a drilling rig for cone penetration testing, a mechanical clamp can be mounted to the drilling head (by means of a special transition piece). The depth than can be achieved depends
More informationPaper V. Acoustic Radiation Losses in Busbars. J. Meltaus, S. S. Hong, and V. P. Plessky J. Meltaus, S. S. Hong, V. P. Plessky.
Paper V Acoustic Radiation Losses in Busbars J. Meltaus, S. S. Hong, and V. P. Plessky 2006 J. Meltaus, S. S. Hong, V. P. Plessky. V Report TKK-F-A848 Submitted to IEEE Transactions on Ultrasonics, Ferroelectrics,
More informationPROCESS TOMOGRAPHY Ltd. ELECTRICAL CAPACITANCE TOMOGRAPHY SYSTEM TYPE TFLR5000 OPERATING MANUAL VOLUME 1. FUNDAMENTALS OF ECT
PROCESS TOMOGRAPHY Ltd. ELECTRICAL CAPACITANCE TOMOGRAPHY SYSTEM TYPE TFLR5000 OPERATING MANUAL Issue 1 December 2009 VOLUME 1. FUNDAMENTALS OF ECT Software Version 659 Firmware version 2.2p1_48FSR System
More informationThermocouple Dynamic Errors Correction for Instantaneous Temperature Measurements in Induction Heating. Krzysztof Konopka 1
Thermocouple Dynamic Errors Correction for Instantaneous Temperature Measurements in Induction Heating Krzysztof Konopka 1 1 Institute of Measurement Science, Electronics and Control, Silesian University
More informationarxiv: v1 [physics.ins-det] 3 Dec 2018 Fast Interaction Trigger for the upgrade of the ALICE experiment at CERN: design and performance
arxiv:1812.00594v1 [physics.ins-det] 3 Dec 2018 Fast Interaction Trigger for the upgrade of the ALICE experiment at CERN: design and performance Alla Maevskaya for the ALICE collaboration 1, 1 Institute
More informationLow-Noise Sigma-Delta Capacitance-to-Digital Converter for Sub-pF Capacitive Sensors with Integrated Dielectric Loss Measurement
Low-Noise Sigma-Delta Capacitance-to-Digital Converter for Sub-pF Capacitive Sensors with Integrated Dielectric Loss Measurement Markus Bingesser austriamicrosystems AG Rietstrasse 4, 864 Rapperswil, Switzerland
More informationVISUALISATION OF TWO-PHASE GAS-LIQUID PIPE FLOWS USING ELECTRICAL CAPACITANCE TOMOGRAPHY
Proceedings of ESDA2004 7th Biennial ASME Conference on Engineering Systems Design and Analysis July 19-22, 2004, Manchester, UK ESDA2004-58396 VISUALISATION OF TWO-PHASE GAS-LIQUID PIPE FLOWS USING ELECTRICAL
More informationTemperature Measurement of Various Permittivity Medium by AC ECT
Temperature Measurement of Various Permittivity Medium by AC ECT K.Manikandan 1, S.Sathiyamoorthy 2 12 JJ College of Engineering and Technology, Tiruchirappalli, India.. Abstract The measurement of temperature
More informationFundamentals of Digital Design
Fundamentals of Digital Design Digital Radiation Measurement and Spectroscopy NE/RHP 537 1 Binary Number System The binary numeral system, or base-2 number system, is a numeral system that represents numeric
More informationDevelopment of a new MeV gamma-ray camera
Development of a new MeV gamma-ray camera ICEPP Symposium February 16, 2004 Hakuba, Nagano, Japan Kyoto University Atsushi Takeda H. Kubo, K. Miuchi, T. Nagayoshi, Y. Okada, R. Orito, A. Takada, T. Tanimori,
More informationMM54C14 MM74C14 Hex Schmitt Trigger
MM54C14 MM74C14 Hex Schmitt Trigger General Description The MM54C14 MM74C14 Hex Schmitt Trigger is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement
More informationDigital or Analog. Digital style. Old school. or analog? q. digitally: q q 7 q 6 q 5 q 4 q 3 q 2 q 1 q 0. binary coded funnels
Digital or Analog digitally: q 0 255 q 7 q 6 q 5 q 4 q 3 q 2 q 1 q 0 1 ½ ¼ 1/8 1/16 1/32 1/64 1/128 binary coded funnels or analog? q Volume flow [l/min] Digital style Old school Digital Analog converter?
More information2Ω, Quad, SPST, CMOS Analog Switches
9-73; Rev ; 4/ 2Ω, Quad, SPST, CMOS Analog Switches General Description The // quad analog switches feature.6ω max on-resistance (R ) when operating from a dual ±5V supply. R is matched between channels
More informationINSTRUMENTAL ENGINEERING
INSTRUMENTAL ENGINEERING Subject Code: IN Course Structure Sections/Units Section A Unit 1 Unit 2 Unit 3 Unit 4 Unit 5 Unit 6 Section B Section C Section D Section E Section F Section G Section H Section
More informationDual-Field Arithmetic Unit for GF(p) and GF(2 m ) *
Institute for Applied Information Processing and Communications Graz University of Technology Dual-Field Arithmetic Unit for GF(p) and GF(2 m ) * CHES 2002 Workshop on Cryptographic Hardware and Embedded
More informationMeasurement of radon ( 222 Rn) and thoron ( 220 Rn) concentration with a single scintillation cell
NUKLEONIKA 2007;52(4):167 171 ORIGINAL PAPER Measurement of radon ( 222 Rn) and thoron ( 220 Rn) concentration with a single scintillation cell Bronisław Machaj, Piotr Urbański, Jakub Bartak Abstract.
More informationMM54HC73 MM74HC73 Dual J-K Flip-Flops with Clear
MM54HC73 MM74HC73 Dual J-K Flip-Flops with Clear General Description These J-K Flip-Flops utilize advanced silicon-gate CMOS technology They possess the high noise immunity and low power dissipation of
More informationContrabands detection with a low energy electron linac driven photoneutron source
Contrabands detection with a low energy electron linac driven photoneutron source Yigang Yang Tsinghua University, Beijing, China yangyigang@mail.tsinghua.edu.cn Outline 1. Research motivation 2. e-linac
More informationRequirements to perform accurate dielectric material analysis
Requirements to perform accurate dielectric material analysis By Britta Pfeiffer 2017 by OMICRON Lab V1.0 Visit www.omicron-lab.com for more information. Contact support@omicron-lab.com for technical support.
More informationResearch Article An FPGA-Integrated Time-to-Digital Converter Based on a Ring Oscillator for Programmable Delay Line Resolution Measurement
Electrical and Computer Engineering, Article ID 230803, 5 pages http://dx.doi.org/10.1155/2014/230803 Research Article An FPGA-Integrated Time-to-Digital Converter Based on a Ring Oscillator for Programmable
More informationAdvances in Radio Science
Advances in Radio Science, 3, 331 336, 2005 SRef-ID: 1684-9973/ars/2005-3-331 Copernicus GmbH 2005 Advances in Radio Science Noise Considerations of Integrators for Current Readout Circuits B. Bechen,
More informationEvent Capture α First Light. Abstract
CICADA Note # Event Capture α First Light Glen Langston, Brandon Rumberg, Patrick Brandt NRAO Green Bank August 7, 7 Abstract The Event Capture α data acquisition system, based on the U.C. Berkeley IBOB/ADC
More informationS-13R1 Series REVERSE CURRENT PROTECTION CMOS VOLTAGE REGULATOR. Features. Applications. Packages. ABLIC Inc., Rev.1.
www.ablicinc.com REVERSE CURRENT PROTECTION CMOS VOLTAGE REGULATOR ABLIC Inc., 212-214 Rev.1.2_2 The, developed by using the CMOS technology, is a positive voltage regulator IC of 15 ma output current,
More informationLECTURE 28. Analyzing digital computation at a very low level! The Latch Pipelined Datapath Control Signals Concept of State
Today LECTURE 28 Analyzing digital computation at a very low level! The Latch Pipelined Datapath Control Signals Concept of State Time permitting, RC circuits (where we intentionally put in resistance
More informationDigital Signal 2 N Most Significant Bit (MSB) Least. Bit (LSB)
1 Digital Signal Binary or two stages: 0 (Low voltage 0-3 V) 1 (High voltage 4-5 V) Binary digit is called bit. Group of bits is called word. 8-bit group is called byte. For N-bit base-2 number = 2 N levels
More informationVAISALA RS92 RADIOSONDES OFFER A HIGH LEVEL OF GPS PERFORMANCE WITH A RELIABLE TELEMETRY LINK
VAISALA RS92 RADIOSONDES OFFER A HIGH LEVEL OF GPS PERFORMANCE WITH A RELIABLE TELEMETRY LINK Hannu Jauhiainen, Matti Lehmuskero, Jussi Åkerberg Vaisala Oyj, P.O. Box 26 FIN-421 Helsinki Finland Tel. +358-9-89492518,
More informationVariable capacitor energy harvesting based on polymer dielectric and composite electrode
2.8.215 Variable capacitor energy harvesting based on polymer dielectric and composite electrode Robert Hahn 1*, Yuja Yang 1, Uwe Maaß 1, Leopold Georgi 2, Jörg Bauer 1, and K.- D. Lang 2 1 Fraunhofer
More informationThe Hermes Recoil Silicon Detector
The Hermes Recoil Silicon Detector Introduction Detector design considerations Silicon detector overview TIGRE microstrip sensors Readout electronics Test beam results Vertex 2002 J. Stewart DESY Zeuthen
More informationCoulomb s law with Cobra3
Coulomb s law with Cobra3 LEP Related Topics Electric field, electric field strenght, electric flux, electrostatic induction, electric constant, surface charge density, dielectric displacement, electrostatic
More informationNanoscale voxel spectroscopy by simultaneous EELS and EDS tomography
Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2014 Supplementary Information Nanoscale voxel spectroscopy by simultaneous EELS and EDS tomography
More informationSwitched Capacitor Filter
Switched Capacitor Filter Design for Mixed Signal Applications by Klaus Jørgensen Napier No. 47824 Supervisor Dr. Mohammad Y Sharif Contents Aims of the Project Switch Capacitor Filter Basic Theory Low-pass
More informationFull-wave Simulations of Lower Hybrid Wave Propagation in the EAST Tokamak
Full-wave Simulations of Lower Hybrid Wave Propagation in the EAST Tokamak P. T. BONOLI, J. P. LEE, S. SHIRAIWA, J. C. WRIGHT, MIT-PSFC, B. DING, C. YANG, CAS-IPP, Hefei 57 th Annual Meeting of the APS
More informationINTERACTION BETWEEN ELECTRIC CHARGES
Publikacja współfinansowana ze środków Unii Europejskiej w ramach Europejskiego Funduszu Społecznego AUTHOR G. Jarosz INTERACTION BETWEEN ELECTRIC CHARGES When we rub plastic rods with a piece of fur,
More informationS-1000 Series ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR. Features. Applications. Packages. Seiko Instruments Inc. 1.
S-1000 Series www.sii-ic.com ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR Seiko Instruments Inc., 2004-2015 Rev.3.1_00 The S-1000 series is a series of high-precision voltage detectors developed
More informationCambridge International Examinations Cambridge International Advanced Level
Cambridge International Examinations Cambridge International Advanced Level *1906711534* PHYSICS 9702/41 Paper 4 A2 Structured Questions May/June 2014 2 hours Candidates answer on the Question Paper. No
More informationNon-Iterative Object Detection Methods in Electrical Tomography for Robotic Applications
Non-Iterative Object Detection Methods in Electrical Tomography for Robotic Applications Stephan Mühlbacher-Karrer, Juliana P. Leitzke, Lisa-Marie Faller and Hubert Zangl Institute of Smart Systems Technologies,
More informationAutomatic Adjustment of Integration Time in the NIR Camera for Calibrated Temperature Measurement during Inductive Heating Processes
Automatic Adjustment of Integration Time in the NIR Camera for Calibrated Temperature Measurement during Inductive Heating Processes More info about this article: http://www.ndt.net/?id=20685 by Piotr
More informationINTERNATIONAL ATOMIC ENERGY AGENCY Division of Physical and Chemical Sciences Physics Section
INTERNATIONAL ATOMIC ENERGY AGENCY Division of Physical and Chemical Sciences Physics Section Second Research Co-ordination Meeting Co-ordinated of the ordinated Research Project on Elements of Power Plant
More informationCMOS ±5 V/+5 V/+3 V Triple SPDT Switch ADG633
CMOS ±5 V/+5 V/+3 V Triple SPT Switch AG633 FEATURES ±2 V to ±6 V ual Supply 2 V to 12 ingle Supply Automotive Temperature Range 4 o C to +125 o C
More informationDATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Sep FEATURES Low noise Interchangeability of drain
More informationAN2970 Application note
Application note Principles of capacitive touch and proximity sensing technology The objective of this document is to present the principles of capacitive sensing and charge transfer used in STMicroelectronics
More informationVELOCITY MEASUREMENT SIMULATIVE STUDY OF TWIN PLANE ECT USING ADVANCED CROSS CORRELATION TECHNIQUE
VELOCITY MEASUREMENT SIMULATIVE STUDY OF TWIN PLANE ECT USING ADVANCED CROSS CORRELATION TECHNIQUE H. L. M. Ameran 1, E. J. Mohamad 1,, R. A. Rahim 2, W. N. A. Rashid 3, M. M. Mohamad 4, H. Hashim 5, Z.
More informationA Nonuniform Quantization Scheme for High Speed SAR ADC Architecture
A Nonuniform Quantization Scheme for High Speed SAR ADC Architecture Youngchun Kim Electrical and Computer Engineering The University of Texas Wenjuan Guo Intel Corporation Ahmed H Tewfik Electrical and
More information*1. Attention should be paid to the power dissipation of the package when the output current is large.
S-1313 Series www.ablic.com www.ablicinc.com SUPER LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR ABLIC Inc., 211-216 Rev.2.1_1 The S-1313 Series, developed by using the CMOS technology, is
More informationarxiv: v2 [physics.ins-det] 8 Feb 2013
Preprint typeset in JINST style - HYPER VERSION arxiv:1302.0278v2 [physics.ins-det] 8 Feb 2013 Investigation of gamma ray detection performance of thin LFS scintillator with MAPD readout E.Guliyev a, F.Ahmadov
More informationEvolution of RFID Systems
Evolution of RFID Systems Peter H Cole Adelaide Auto-ID Laboratory 23 January 2006 Evolution of RFID systems 1 1 Objectives Title is to capture notions of How RFID systems have evolved under constraints
More informationAn industrial radiography exposure device based on measurement of transmitted gamma-ray intensity
Journal of Physics: Conference Series PAPER OPEN ACCESS An industrial radiography exposure device based on measurement of transmitted gamma-ray intensity To cite this article: C Polee et al 2015 J. Phys.:
More informationChemistry 431 Practice Final Exam Fall Hours
Chemistry 431 Practice Final Exam Fall 2018 3 Hours R =8.3144 J mol 1 K 1 R=.0821 L atm mol 1 K 1 R=.08314 L bar mol 1 K 1 k=1.381 10 23 J molecule 1 K 1 h=6.626 10 34 Js N A = 6.022 10 23 molecules mol
More informationHCF4089B BINARY RATE MULTIPLIER
BINARY RATE MULTIPLIER CASCADABLE IN MULTIPLES OF 4-BITS SET TO "15" INPUT AND "15" DETECT OUTPUT QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V AND 15V PARAMETRIC
More information3SK318. Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier. ADE (Z) 1st. Edition Feb Features. Outline
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-08-600 (Z) st. Edition Feb. 998 Features Low noise characteristics; (NF=. db typ. at f= 900 MHz) Excellent cross modulation characteristics Capable
More informationFractional Filters: An Optimization Approach
Fractional Filters: An Optimization Approach Carlos Matos and Manuel Duarte Ortigueira 2 UNINOVA and Escola Superior de Tecnologia, Instituto Politécnico de Setúbal, Portugal cmatos@est.ips.pt, 2 UNINOVA/DEE
More informationCHAPTER.4: Transistor at low frequencies
CHAPTER.4: Transistor at low frequencies Introduction Amplification in the AC domain BJT transistor modeling The re Transistor Model The Hybrid equivalent Model Introduction There are three models commonly
More informationElectron Current Extraction and Interaction of RF mdbd Arrays
Electron Current Extraction and Interaction of RF mdbd Arrays Jun-Chieh Wang a), Napoleon Leoni b), Henryk Birecki b), Omer Gila b), and Mark J. Kushner a) a), Ann Arbor, MI 48109 USA mkush@umich.edu,
More informationTesting Thermodynamic States
Testing Thermodynamic States Joe T. Evans, January 16, 2011 www.ferrodevices.com Presentation Outline Introduction A charge model for electrical materials Instrumentation theory based on the charge model
More informationEFFECT OF DISTRIBUTION OF VOLUMETRIC HEAT GENERATION ON MODERATOR TEMPERATURE DISTRIBUTION
EFFECT OF DISTRIBUTION OF VOLUMETRIC HEAT GENERATION ON MODERATOR TEMPERATURE DISTRIBUTION A. K. Kansal, P. Suryanarayana, N. K. Maheshwari Reactor Engineering Division, Bhabha Atomic Research Centre,
More informationLubricating Oil Pollution Detection Sensor Design
Sensors & Transducers 014 by IFSA Publishing, S. L. http://www.sensorsportal.com Lubricating Oil Pollution Detection Sensor Design Zhichun WANG, Zengjia WANG, Jianhang WANG, Wentao LI College of information
More informationHow to Analyze the EMC of a Complete Server System?
How to Analyze the EMC of a Complete Server System? Christian Schuster and Xiaomin Duan Institut für Hamburg, Germany Workshop on Hybrid Computational Electromagnetic Methods for EMC/EMI (WS10) EMC Europe,
More informationMM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer
MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer General Description The MM74C150 and MM82C19 multiplex 16 digital lines to 1 output. A 4-bit address code determines
More informationb Physics Prospects For The LHCb Experiment Thomas Ruf for the LHCb Collaboration Introduction Detector Status Physics Program
b Physics Prospects For The LHCb Experiment Thomas Ruf for the LHCb Collaboration Introduction Detector Status Physics Program b Primary goal of the LHCb Experiment Search for New Physics contributions
More informationNew perspectives in X-ray detection of concealed illicit materials brought by CdTe/CdZnTe spectrometric detectors
New perspectives in X-ray detection of concealed illicit materials brought by CdTe/CdZnTe spectrometric detectors Jean-Marc Dinten, Jean-Louis Amans, Loïck Verger, Olivier Peyret CEA-LETI, MINATEC, Recherche
More informationFoCal Project in ALICE. Yota Kawamura for the ALICE FoCal collaboration TCHoU workshop 2018/3/15
FoCal Project in ALICE Yota Kawamura for the ALICE FoCal collaboration TCHoU workshop 218/3/15 1 Outline Introduction of FoCal Project Motivation Detector design The result of past test beam (214~216)
More informationTHE APPROACH TO THE ANALYSIS OF ELECTRICAL FIELD DISTRIBUTION IN THE SETUP OF PAPER INSULATED ELECTRODES IN OIL
THE APPROACH TO THE ANALYSIS OF ELECTRICAL FIELD DISTRIBUTION IN THE SETUP OF PAPER INSULATED ELECTRODES IN OIL Pawel Rozga, PhD Dariusz Hantsz, MSc Technical University of Lodz, Poland Abstract Article
More informationMagnetic Field Mapping for Complex Geometry Defect - 3D Transient Problem
17th World Conference on Nondestructive Testing, 25-28 Oct 2008, Shanghai, China Magnetic Field Mapping for Complex Geometry Defect - 3D Transient Problem Ilham M. ZAINAL, Gui Y. TIAN, Yong LI School of
More informationElectrodynamics Qualifier Examination
Electrodynamics Qualifier Examination January 10, 2007 1. This problem deals with magnetostatics, described by a time-independent magnetic field, produced by a current density which is divergenceless,
More informationINSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad
INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad - 500 04 ELECTRONICS AND COMMUNICATION ENGINEERING Name : Electronic Measurements and Instrumentation Code : A50422 Class : III -
More informationCP 52 Page In & Zone Sensitivity
db SSM S R.0K R0.00K To Sheet ZA ON OFF C 0. R.K R 0.0K DUCK To Sheet Page Input Shield R 00 S PP Phantom Power 0/V L T C 0PF C L 0PF T EURO POS R0 0 R 0 R.0K 00/0V R Mic/Line.K R.K R.0K R 00 R. R0A KRD
More informationMM74HC4020 MM74HC Stage Binary Counter 12-Stage Binary Counter
MM74HC4020 MM74HC4040 14-Stage Binary Counter 12-Stage Binary Counter General Description The MM54HC4020/MM74HC4020, MM54HC4040/ MM74HC4040, are high speed binary ripple carry counters. These counters
More informationRP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information
RP122 3mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator General Description The RP122 is designed for portable RF and wireless applications with demanding performance and space requirements. The RP122
More informationStudy of pure CsI crystal coupling with APD. The University of Tokyo. Yi-Fan JIN
Study of pure CsI crystal coupling with APD The University of Tokyo Yi-Fan JIN 1 BELLE II @ SuperKEKB High Energy Physics Experiment Electron-position collider Belle II Studies CP violation Using B mesons
More informationCapacitance Level Measurement Electronic Inserts EC 37 Z, EC 47 Z
Technical Information TI 271F/00/en Operating Instructions 017182-1000 Capacitance Level Measurement Electronic Inserts EC 37 Z, EC 47 Z Transmitters for capacitance probes Application The electronic inserts
More informationEE247 Lecture 16. Serial Charge Redistribution DAC
EE47 Lecture 16 D/A Converters D/A examples Serial charge redistribution DAC Practical aspects of current-switch DACs Segmented current-switch DACs DAC self calibration techniques Current copiers Dynamic
More informationExercise 1: RC Time Constants
Exercise 1: RC EXERCISE OBJECTIVE When you have completed this exercise, you will be able to determine the time constant of an RC circuit by using calculated and measured values. You will verify your results
More informationINSTITUTE OF AERONAUTICAL ENGINEERING Dundigal, Hyderabad DEPARTMENT OF ECE QUESTION BANK. : G.Lakshminarayana, Asst.
` INSTITUTE OF AERONAUTICAL ENGINEERING Dundigal, Hyderabad - 500 04 DEPARTMENT OF ECE QUESTION BANK Name Code Class Branch P a g e : Electronic Measurements and Instrumentation : A504 : III - B. Tech
More informationDATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Jul FEATURES Interchangeability of drain and source
More informationSWITCHED CAPACITOR AMPLIFIERS
SWITCHED CAPACITOR AMPLIFIERS AO 0V 4. AO 0V 4.2 i Q AO 0V 4.3 Q AO 0V 4.4 Q i AO 0V 4.5 AO 0V 4.6 i Q AO 0V 4.7 Q AO 0V 4.8 i Q AO 0V 4.9 Simple amplifier First approach: A 0 = infinite. C : V C = V s
More informationMM74C90 MM74C93 4-Bit Decade Counter 4-Bit Binary Counter
4-Bit Decade Counter 4-Bit Binary Counter General Description The MM74C90 decade counter and the MM74C93 binary counter and complementary MOS (CMOS) integrated circuits constructed with N- and P-channel
More informationBeam Diagnostics for RIBF in RIKEN
Beam Diagnostics for RIBF in RIKEN T. Watanabe, M. Fujimaki, N. Fukunishi, M. Kase, M. Komiyama, N. Sakamoto, H. Watanabe, K. Yamada and O. Kamigaito RIKEN Nishina Center R. Koyama Sumitomo Heavy Industries
More informationMeasurement of a Clock-Tuned Digital Non-Foster Circuit for Positive or Negative Digital Capacitance
Measurement of a Clock-Tuned Digital Non-Foster Circuit for Positive or Negative Digital Capacitance Patrick J. Kehoe, Killian K. Steer, and Thomas P. Weldon Department of Electrical and Computer Engineering
More informationMM74C73 Dual J-K Flip-Flops with Clear and Preset
MM74C73 Dual J-K Flip-Flops with Clear and Preset General Description The MM74C73 dual J-K flip-flops are monolithic complementary MOS (CMOS) integrated circuits cotructed with N- and P-channel enhancement
More informationMicromegas detectors & the Great Pyramid. S. Procureur
Micromegas detectors & the Great Pyramid S. Procureur Tech Transfer Workshop January 12 th, 2018 CONTENT Introduction Micromegas and CLAS12 First muon instruments @ Saclay ScanPyramids: preparation and
More informationDETECT FLOW OF STEAM IN AIR BY ELECTRICAL CAPACITANCE TOMOGRAPHY
DETECT FLOW OF STEAM IN AIR BY ELECTRICAL CAPACITANCE TOMOGRAPHY Katarína RATKOVSKÁ 1 - Miroslava CÚTTOVÁ 2 Abstract:.In practice, the steam can also occur in cases where there not be formed, and then
More informationCNY64/ CNY65/ CNY66. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. VDE Standards
Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The
More informationExperiment objectives: measure the ratio of Planck s constant to the electron charge h/e using the photoelectric effect.
Chapter 1 Photoelectric Effect Experiment objectives: measure the ratio of Planck s constant to the electron charge h/e using the photoelectric effect. History The photoelectric effect and its understanding
More informationToday in Physics 122: resistance
Today in Physics 122: resistance Ohm s Law Resistivity and the physics behind resistance Resistors of different shapes and sizes, and how to calculate their resistance from their resistivity Resistor networks
More informationCD4013BM CD4013BC Dual D Flip-Flop
CD4013BM CD4013BC Dual D Flip-Flop General Description The CD4013B dual D flip-flop is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement mode transistors
More informationDesign and Development of a Microscopic Electrical Impedance Tomography System
International Journal of Integrated Engineering Special Issue on Electrical Electronic Engineering Vol. 9 No. 4 (2017) p. 27-31 Design and Development of a Microscopic Electrical Impedance Tomography System
More informationCD4013BC Dual D-Type Flip-Flop
Dual D-Type Flip-Flop General Description The CD4013B dual D-type flip-flop is a monolithic complementary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement mode transistors. Each
More informationQualification of tabulated scattering parameters
Qualification of tabulated scattering parameters Stefano Grivet Talocia Politecnico di Torino, Italy IdemWorks s.r.l. stefano.grivet@polito.it 4 th IEEE Workshop on Signal Propagation on Interconnects
More informationSupplementary Figure 1. Theoretical calculation results to optimize the FEP layer thickness
Supplementary Figures: Supplementary Figure 1. Theoretical calculation results to optimize the FEP layer thickness Supplementary Figure 2. SEM picture of the surface of (a) FEP (b) Al foil Supplementary
More information