Effect of a dielectric layer on plasma uniformity in high frequency electronegative capacitive discharges
|
|
- Theresa Parsons
- 5 years ago
- Views:
Transcription
1 Effect of a dielectric layer on plasma uniformity in high frequency electronegative capacitive discharges Emi KawamuraDe-Qi WenMichael A. Lieberman and Allan J. Lichtenberg Citation: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35, 05C311 (2017); doi: / View online: View Table of Contents: Published by the American Vacuum Society
2 Effect of a dielectric layer on plasma uniformity in high frequency electronegative capacitive discharges Emi Kawamura a) Department of Electrical Engineering, University of California, Berkeley, California De-Qi Wen Department of Electrical Engineering, University of California, Berkeley, California and School of Physics and Optoelectronics Engineering, Dalian University of Technology, Dalian , People s Republic of China Michael A. Lieberman and Allan J. Lichtenberg Department of Electrical Engineering, University of California, Berkeley, California (Received 28 April 2017; accepted 28 June 2017; published 13 July 2017) The authors use a fast 2D axisymmetric fluid-analytical code to study the effect of adding a dielectric layer over the wafer electrode of a high frequency capacitively coupled plasma (CCP) reactor. At higher frequencies and larger areas, the wavelengths of the radially propagating surface waves in the plasma can become significantly shorter than the reactor dimensions, leading to center-high plasma nonuniformities. These wavelengths increase with increasing sheath widths, suggesting that a method to suppress wave effects in a high frequency CCP is to increase the effective sheath width by adding a dielectric layer over the wafer electrode. The authors conducted simulations with and without a dielectric layer and found that the dielectric layer improved plasma uniformity. The authors also studied the effect of adding a thin conducting or resistive silicon wafer above the dielectric layer and found that a conducting silicon wafer shorts out the fields and shields the discharge from the dielectric layer, while the resistive silicon wafer allows the fields to pass through to the dielectric layer. VC 2017 American Vacuum Society.[ I. INTRODUCTION In this work, we study the effect of adding a dielectric layer over the wafer electrode of a high frequency capacitively coupled plasma (CCP) reactor, in order to suppress electromagnetic (EM) effects and thus improve plasma uniformity. High frequency, large area CCP reactors with electronegative feedstock gases are widely used in the semiconductor processing industry for reactive ion etching. Larger area CCPs allow larger wafers and increased production. Increasing the frequency results in the decrease in the sheath widths and voltages, leading to a decrease in the ion bombarding energy, which may be desirable for processing integrated circuits with smaller dimensions. Also, for CCPs at a given power, the fraction of power deposited into electrons (as opposed to ions) increases with increasing frequency, 1 leading to higher plasma density and ion flux at the wafer target. However, at higher frequencies and/or larger areas, the wavelength k p of the EM surface wave in the plasma can become significantly shorter than the reactor radius, leading to standing wave effects which negatively affect plasma uniformity. 2,3 Previous works have modeled EM effects in large area, high frequency CCPs by solving Maxwell s equations either in the frequency domain 4 10 or in the time domain, capturing nonlinear effects. Other studies investigated nonlinear effects that can strongly enhance center-high fields even at frequencies for which the fundamental k p is much larger than the reactor radius Typical CCP reactors used in industry are asymmetric with the powered wafer electrode significantly smaller than a) Electronic mail: kawamura@eecs.berkeley.edu the grounded electrode. Both axially symmetric and antisymmetric radially propagating surface wave modes can exist in asymmetric capacitive discharges. 6 The upper and lower axial sheath fields (E z ) are aligned for the symmetric mode, while they are opposed for the antisymmetric mode. In a previous paper, 10 we used a linear analytic EM model to study the modes of an asymmetric CCP reactor with unequal uniform sheath widths s and w for the wafer and grounded electrodes, respectively. The model was not self-consistent, as it solved Maxwell s equations for the fields assuming known and uniform values for electron density n e andelectrontemperature T e. The fields were solved in both the wafer region (0 < r < R x ) and outside the wafer region (R x < r < R), where R x and R are the radii of the wafer and discharge, respectively. The wavenumber of a radially propagating symmetric surface wave in the wafer region is given approximately by 10 k s x 1=2 l eff ; (1) c s þ w with c being the speed of light, x the applied radian frequency, and l eff an effective discharge width due to the skin effect. The effective width l eff is related to the actual discharge width l by the skin depth d ¼ c/x p,wherex p ¼ n e e 2 1=2 = ð 0 m e Þ is the electron plasma frequency. For s, w l eff l eff ð l 0 e z=d dz ¼ dð1 e l=d Þ: (2) For d l, d and l eff decrease with increasing n e. The wavenumber of an antisymmetric mode surface wave is given approximately by 10 05C311-1 J. Vac. Sci. Technol. A 35(5), Sep/Oct /2017/35(5)/05C311/9/$30.00 VC 2017 American Vacuum Society 05C311-1
3 05C311-2 Kawamura et al.: Effect of a dielectric layer on plasma uniformity 05C311-2 k a x c! 1=2 1 þ d2 ðs þ wþ : (3) swl eff At higher frequencies and lower sheath widths, both k s and k a are larger so that the corresponding wavelengths k s ¼ 2p/ k s and k a ¼ 2p/k a are smaller, making wave effects more visible. This suggests that a way to suppress the wave effects in a high frequency CCP is to increase the effective sheath width by adding a dielectric layer over the wafer electrode. This paper is divided into the following sections. In Sec. II, we briefly describe the self-consistent 2D linear fluid-analytical model of an axisymmetric cylindrical CCP reactor. In Sec. III A, we present and discuss the results of simulations of a low pressure, high frequency Cl 2 discharge with and without a dielectric layer placed over the wafer electrode. In Sec. III B, we present and discuss the results of simulations of the same discharge when a conducting or resistive silicon wafer is placed over the dielectric layer. Conclusions are given in Sec. IV. II. 2D FLUID-ANALYTICAL CCP MODEL DESCRIPTION As the fast 2D fluid-analytical model used for the CCP simulations has been fully described previously, 9,22 we will only give a brief summary below. The model was developed using the finite element simulation tool COMSOL in the Matlab numerical computing environment. Figure 1 shows the CCP geometry for the three different configurations studied in this paper: (1) the base case with no dielectric layer, (2) the case with a dielectric layer over the wafer electrode, and (3) the case with both a silicon wafer and a dielectric layer over the wafer electrode. In all configurations, we assume an axisymmetric cylindrical geometry with the center of symmetry at r ¼ 0(z-axis). The plasma chamber has a width l of 5 cm and a radius R of 25 cm. There is a 15 cm radius showerhead gas inlet at the top and radial center and a 3 cm width gas outlet at the bottom and radial edge. The wafer electrode has a radius R x of 15 cm and is insulated from other conducting surfaces by a 2.5 cm wide quartz dielectric spacer. A dielectric layer of varying widths z d and relative dielectric constants j d may be placed above the bottom wafer electrode as shown in Fig. 1(b). Also, a thin silicon wafer with variable resistivity q Si can be placed over this dielectric layer as shown in Fig. 1(c). The bulk plasma region is surrounded by a sheath region with a nominal width of s 0 ¼ 0.5 mm. The feedstock gas in the simulations is Cl 2, and we use the chlorine reaction rate set compiled by Thorsteinsson and Gudmundsson. 23 The model treats each region of the reactor as a dielectric slab. The free-space magnetic permeability l ¼ l 0 is assumed everywhere, while ¼ j 0 depends on the relative dielectric constant j of each region. The sheath relative dielectric constant j s is initially set to one but is calculated as a function of the local electric field and plasma parameters as discussed in Refs. 9 and 22. The quartz dielectric spacer has j ¼ 4. In the plasma region, the relative dielectric constant is FIG. 1. Model geometry of the 2D axisymmetric CCP reactor for configurations with (a) no dielectric layer, (b) a dielectric layer over the wafer electrode, and (c) a silicon wafer and dielectric layer over the wafer electrode. j p ¼ 1 x 2 p xx ð j m Þ ; (4) where x is the applied radian rf frequency and m is the electron-neutral momentum transfer collision frequency. Note that j p is complex with a dissipative imaginary component so that the model treats the plasma region as a lossy dielectric. In axisymmetric geometry, the capacitive fields E r, E z, and H / are in the transverse magnetic mode. In this case, the magnetic field is transverse to the axis of symmetry, while the electric field has components both parallel and transverse to the axis of symmetry. The model assumes that all the field components are proportional to e jxt. This eliminates the time-dependence from the field so that the time-independent Helmholtz equation can be used to solve for the fields. The simulation consists of four basic parts: (1) a linear EM model which uses the time-independent Helmholtz equation to solve for the capacitive fields in the linearized frequency domain; (2) an ambipolar, quasineutral bulk plasma model which solves the time-dependent fluid equations for ion continuity and electron energy balance; (3) an analytical sheath model which solves for the sheath parameters (i.e., sheath voltage, sheath width, and j s ); (4) a gas flow model which solves for the steady-state composition, pressure, temperature, and velocity of the reactive gas. The total J. Vac. Sci. Technol. A, Vol. 35, No. 5, Sep/Oct 2017
4 05C311-3 Kawamura et al.: Effect of a dielectric layer on plasma uniformity 05C311-3 simulation time for a Cl 2 CCP reactor is about 1 2 h on a moderate workstation with 2.7 GHz central processing unit and 12 GB of memory. III. 2D FLUID-ANALYTICAL SIMULATIONS In this section, we present and discuss the results of 2D fluid-analytical simulations of a 500 sccm, 10 mtorr Cl 2 CCP reactor with the configurations shown in Fig. 1 with l ¼ 5cm, R ¼ 25 cm, and R x ¼ 15 cm. The discharges were driven with a total input power of P rf ¼ 300 W at a frequency of f ¼ 100 MHz. At a high frequency of 100 MHz, most of the P rf values go to electron heating P e, resulting in an n e / P e of about m 3 in the wafer region. At this n e, the effective width l eff from Eq. (2) is about 2.76 cm which is significantly smaller than the actual discharge width of l ¼ 5cm.Theinput parameters for power and frequency resulted in significant center-high nonuniformities for the base case with no dielectric layer. A. Simulations with and without the dielectric layer We initially simulate the base case with no dielectric layer as shown in Fig. 1(a) and a series of simulations with a dielectric layer placed over the bottom wafer electrode as shown in Fig. 1(b). The dielectric layer width z d is initially fixed at 3 mm, and the relative dielectric constant j d is varied from 1 to 9. Since the capacitance per unit area of the dielectric layer is c d ¼ j d 0 /z d, we can define an effective width z eff z d =j d ; (5) such that c d ¼ 0 /z eff. For a fixed applied frequency and wafer area, the capacitance and therefore impedance of the dielectric layer depend only on z eff so that dielectrics with the same z eff should have similar EM effects even if they have different z d or j d. We test the accuracy of this assumption by conducting an additional simulation with z d ¼ 1 mm and j d ¼ 3 to compare with the z d ¼ 3 mm and j d ¼ 9 case, as both have the same z eff ¼ 1/3 mm. In Fig. 2, we show the results of the base case with no dielectric layer for (a) n e (r) at the midplane (solid) and along the bottom (dashed) and top (dotted) sheath edges, (b) the midplane positive and negative ion densities n þ (r) (solid) and n (r) (dashed), (c) the rf sheath voltage amplitudes, and (d) timeaveraged sheath widths at the bottom wafer (solid) and top grounded (dashed) electrodes. All the diagnostics display significant center-high nonuniformity, indicating that the discharge is near a spatial resonance. The first and second spatial resonances for the symmetric mode occur at k s R ¼ v and k s R ¼ v , where v 01 and v 02 are the first and FIG. 2. 2D fluid-analytical results for the base case with no dielectric layer, showing (a) n e (r) at the midplane (solid) and along the bottom (dashed) and top (dotted) sheath edges, (b) the midplane n þ (r) (solid) and n (r) (dashed), and (c) the rf sheath voltage amplitudes and (d) the time-averaged sheath widths at the bottom wafer (solid) and top grounded (dashed) electrodes. JVST A - Vacuum, Surfaces, and Films
5 05C311-4 Kawamura et al.: Effect of a dielectric layer on plasma uniformity 05C311-4 second zeroes of the zero-order Bessel function J 0 (v). The first and second spatial resonances for the antisymmetric mode occur at k a R ¼ v and k a R ¼ v , where v 11 and v 12 are the first and second zeroes of the first-order Bessel function J 1 (v). The average values of the sheath widths and electron density in the wafer region are s 0.54 mm, w 0.48 mm, and n e m 3. Substituting these values into Eqs. (1) and (3), weobtaink s R 2.64 and k a R 6.9. The former is fairly close to the first symmetric mode resonance, while the latter is very close to the second antisymmetric mode resonance. In a previous work, 20 we found that for the present CCP configuration with n e m 3,thefirst antisymmetric mode resonance occurs at about f ¼ 72.5 MHz, while the first symmetric mode resonance occurs at about f ¼ 90 MHz. From Fig. 2, we see that the smaller wafer electrode sheath does not dominate as it would near a symmetric mode resonance. Instead, the peak sheath voltages and sheath widths at the radial center are similar for both electrodes, indicating that the antisymmetric mode resonance dominates. Recall that E z values for the top and bottom electrodes are aligned for the symmetric mode, while they are opposed for the antisymmetric mode. Let E zs and E za be the axial fields for the symmetric and antisymmetric modes, respectively, and let E zb and E zt be the fields at the bottom wafer and top grounded electrodes, respectively. Then, E zb ¼ E zs þ E za and E zt ¼ E zs E za so that E zs ¼ E zb þ E zt ; (6) 2 and E za ¼ E zb E zt : (7) 2 In Fig. 3, we show the base case results for E zb (r) (solid) and E zt (r) (dashed), as well as their symmetric and antisymmetric mode components E zs (r) (dotted) and E za (r) (dot-dashed) in the wafer region in four different phases / ¼ xt ¼ p=4; p=2; 3p=4, p of an rf half-cycle. (The second half-cycle results would just be a reflection across the E z ¼ 0 axis of the first half-cycle results.) We see that for most of the rf cycle, E zb and E zt are opposed and the antisymmetric mode dominates over the symmetric mode. At / ¼ p=4 and p/2, the symmetric and antisymmetric modes are of similar magnitudes, while at / ¼ 3p=4 and p, where the fields are at their maxima, the antisymmetric mode is much larger than the symmetric mode. Since the base case is close to an antisymmetric mode resonance, we observe significant wave effects in all the FIG. 3. 2D fluid-analytical results for the base case showing E zb (r) (solid), E zt (r) (dashed), E zs (r) (dotted), and E za (r) (dot-dashed) in four different phases / ¼ xt ¼ p=4; p=2; 3p=4, p of an rf half-cycle. J. Vac. Sci. Technol. A, Vol. 35, No. 5, Sep/Oct 2017
6 05C311-5 Kawamura et al.: Effect of a dielectric layer on plasma uniformity 05C311-5 diagnostics in Fig. 2, especially the sheath voltages and sheath widths. We expect the sheath width variation to closely follow that of the sheath voltage since our analytical sheath model assumes a Child Law relation s / V 3=4 sh.atthe low discharge pressure of 10 mtorr, the high diffusion rate counteracts the center-high power deposition so that the densities are not as centrally peaked as the sheath voltages. The discharge is also highly electronegative with an electronegativity a ¼ n /n e 10. In highly electronegative discharges with high ion densities, the recombination rate may exceed the ionization rate at the radial center where the densities are peaked. This can cause a dip in the ion densities at the radial center, which can also counteract the center-high power deposition. We also note that there is little axial variation in n e, as the midplane and sheath edge densities are all close in value. In a highly electronegative plasma with n n e, quasineutrality in the bulk is maintained mostly by the negative ions rather than the electrons. Since the less mobile negative ions have a much smaller temperature than the electrons, only a small ambipolar field with j/ a ðþjt z e is required to confine the negative ions to the plasma core. The electrons are in Boltzmann equilibrium with this small field so that n e ðþ¼ z n e0 exp / a ðþ=t z e, where n e0 is the midplane electron density. The zero of the potential is at the axial center and / a ðþ< z 0. Since j/ a ðþjt z e ; n e ðþ z n e0. Also, since the negative ions are confined to the core, n (r) 0andn þ (r) n e (r) along the sheath edges. In Fig. 4, we show the same diagnostics as in Fig. 2 for the case of a dielectric layer with z d ¼ 3 mm and j d ¼ 1 placed over the bottom wafer electrode. In this case, z eff ¼ 3 mm and the effective sheath width along the bottom electrode is s 0 ¼ s þ z eff. For this case, we have s 0.6 mm, w 0.4 mm, s 0 3:6 mm, and n e m 3 in the wafer region. If there were no change in n e, we would expect from Eqs. (1) and (3) that k s R would decrease as (s þ w) 1=2 from 2.64 to 1.33 and k a R would approximately decrease as [(s þ w)/(sw)] 1/2 from 6.9 to 5.8. However, adding the dielectric layer reduced n e by about 20% from 2.5 to m 3, resulting in d increasing from 3.36 to 3.75 cm and l eff increasing from 2.60 to 2.76 cm. From Eqs. (1) and (3), we see that k s R increases as l 1=2 eff, while k ar increases approximately as d=l 1=2 eff so that a 20% reduction in n e results in a slight increase of about 3% in k s R and a modest increase of about 8% in k a R. The combined effect of reducing n e and increasing the effective sheath width resulted in an overall decrease in the wavenumbers such that k s R 1.37 and k a R 6.2, neither of which are near a spatial resonance. Adding the dielectric layer increased the effective sheath width and the wavelengths of the radially propagating surface modes, moving the discharge away from spatial resonances. Thus, the wave effects are suppressed, and we FIG. 4. 2D fluid-analytical results for the case of a dielectric layer with z d ¼ 3 mm and j d ¼ 1 placed over the bottom wafer electrode, showing the same diagnostics as in Fig. 2. JVST A - Vacuum, Surfaces, and Films
7 05C311-6 Kawamura et al.: Effect of a dielectric layer on plasma uniformity 05C311-6 FIG. 5. 2D fluid-analytical results for the case of a dielectric layer with z d ¼ 3 mm and j d ¼ 1 placed over the bottom wafer electrode, showing the same axial fields as in Fig. 3 in four different phases / ¼ xt ¼ p=4; p=2; 3p=4, p of an rf half-cycle. observe improved uniformity in the wafer region for all the diagnostics compared to the base case with no dielectric layer. There is also a significant reduction in the rf sheath voltage at the wafer electrode compared to the base case due to a voltage divider effect. The voltage between the plasma edge and the wafer electrode no longer lies solely across the sheath as in the base case, but it is now divided between the sheath and the dielectric layer. Figure 5 shows the same axial electric fields as in Fig. 3 but for the z d ¼ 3 mm and j d ¼ 1 case. Note that the magnitude of the fields is much smaller compared to the near resonant base case. (The vertical scale in Fig. 5 is about half that in Fig. 3.) Also, since the addition of the z eff ¼ 3 mm dielectric layer moved the system away from an antisymmetric resonance, the antisymmetric mode no longer dominates as it did in the base case. Instead, for most of the rf cycle, the antisymmetric and symmetric modes are of fairly equal magnitudes. Figure 6 shows the rf sheath voltage amplitudes V sh (r) at the bottom wafer electrode for the base case with no dielectric layer (solid black), the dielectric layer cases with z d ¼ 3 mm and j d ¼ 1 (dotted), 4 (dashed), and 9 (dotdashed), and an additional case with z d ¼ 1 mm and j d ¼ 3 (solid gray). For these cases, z eff varies from z eff ¼ 0 for the base case shown in Fig. 2 to z eff ¼ 3 mm for the z d ¼ 3mm with j d ¼ 1 case shown in Fig. 4. Recall that the corresponding k a R values are near resonant k a R ¼ 6.9 for the base case and nonresonant k a R ¼ 6.2 for the z eff ¼ 3 mm case. For our simulated cases, larger z eff should lead to larger s 0, k s, and k a FIG. 6. 2D fluid-analytical results showing rf sheath voltage amplitude V sh (r) at the bottom wafer electrode for the base case with no dielectric layer (solid black) and for the dielectric layer cases. J. Vac. Sci. Technol. A, Vol. 35, No. 5, Sep/Oct 2017
8 05C311-7 Kawamura et al.: Effect of a dielectric layer on plasma uniformity 05C311-7 and a greater suppression of wave effects in the wafer region, as we move further away from the antisymmetric mode resonance. Larger z eff also means larger dielectric layer impedances, leading to a reduction in the sheath voltage as more of the voltage between the plasma edge and the wafer electrode falls across the dielectric layer. Both these trends are seen in Fig. 6. Note that the z d ¼ 1 mm with j d ¼ 3 case and the z d ¼ 3 mm with j d ¼ 9 case have the same z eff ¼ 1/3 mm and therefore give similar results. For the largest z eff case of z d ¼ 3 mm with j d ¼ 1, there is a small peak in the sheath voltage at the wafer edge at r ¼ R x ¼ 15 cm, which is not observed in the lower z eff cases. (The peak observed near but not at the interface for the base case with no dielectric layer is due to the shorter wavelength.) The tangential electric field is continuous across the boundary between two different media. The interface between the dielectric layer with j ¼ j d and the quartz dielectric spacer with j ¼ 4 occurs at r ¼ R x ¼ 15 cm. For a layer with small z eff, the tangential field E z will be small at the interface, and so, we do not expect to see a peak in the sheath voltage at the interface. For a dielectric layer with large z eff, E z can be high at the interface, leading to a peak in the sheath voltage at the interface. Even with relatively high z eff as in the j d ¼ 4 case, there will be no spike if the dielectric layer and the quartz spacer have the same dielectric constant since in this case there is no interface between different media. B. Simulations with the silicon wafer over the dielectric layer In this subsection, we discuss the simulation results with the configuration shown in Fig. 1(c) in which a silicon wafer and a dielectric layer are placed over the wafer electrode. For typical applications, a conducting wafer has a resistivity q Si 0:005 X cm, while a high resistivity wafer can have a q Si of up to 90 X cm. As above, we conduct simulations of a 500 sccm, 10 mtorr Cl 2 reactor with P rf ¼ 300 W at f ¼ 100 MHz. We set z d ¼ 3 mm and j d ¼ 1 for the dielectric layer and set the thickness of the silicon wafer to z Si ¼ 1 mm. We simulate both a conducting wafer with q Si ¼ X cm and a highly resistive wafer with q Si ¼ 90 X cm. Figures 7 and 8 show the same diagnostics as Fig. 2 for the q Si ¼ X cm and q Si ¼ 90 X cm cases, respectively. The simulation results of the conducting wafer case shown in Fig. 7 are similar to the base case results shown in Fig. 2, as both display significant center-high nonuniformity and wave effects. The simulation results of the highly resistive wafer case shown in Fig. 8 resemble the dielectric layer case with z d ¼ 3 mm and j d ¼ 1 shown in Fig. 4, as both show improved uniformity and suppression of wave effects compared to the base case. Thus, a conducting top layer shields the plasma from the dielectric layer, while a highly resistive top layer provides little shielding. The explanation for this contrasting behavior can be found from the skin depth FIG. 7. 2D fluid-analytical results for the case of a conducting silicon wafer with q Si ¼ X cm and a dielectric layer with z d ¼ 3 mm and j d ¼ 1 placed over the bottom wafer electrode, showing the same diagnostics as in Fig. 2. JVST A - Vacuum, Surfaces, and Films
9 05C311-8 Kawamura et al.: Effect of a dielectric layer on plasma uniformity 05C311-8 FIG. 8. 2D fluid-analytical results for the case of a highly resistive silicon layer with q Si ¼ 90 X cm and a dielectric layer with z d ¼ 3 mm and j d ¼ 1 placed over the bottom wafer electrode, showing the same diagnostics as in Fig. 2. sffiffiffiffiffiffiffiffi 2q d Si ¼ Si xl 0 of the silicon wafers. For q Si ¼ X cm, d Si 0.36 mm z Si ¼ 1 mm. So, the conducting wafer shorts out most of the fields and shields the discharge from the dielectric layer. On the other hand, for q Si ¼ 90 X cm, the skin depth d Si 4.8 cm z Si ¼ 1 mm. So, the fields mainly pass through the highly resistive wafer and penetrate the dielectric layer. A critical resistivity q c is obtained by setting d Si ¼ z Si q c ¼ xl 0z 2 Si : (9) 2 For z Si ¼ 1 mm, q c 0.04 X cm. When q Si q c, the silicon wafer is conducting and shorts out most of the fields. When q Si q c, the silicon wafer is highly resistive and most of the fields mainly pass through to the dielectric layer. IV. CONCLUSIONS A fast axisymmetric 2D fluid-analytical code was used to simulate a 500 sccm 10 mtorr Cl 2 CCP reactor for the three different configurations shown in Fig. 1: (1) no dielectric layer, (2) dielectric layer on the wafer electrode, and (3) silicon wafer and dielectric layer over the wafer electrode. In (8) each configuration, the input power and frequency were set to P rf ¼ 300 W at f ¼ 100 MHz, resulting in an average n e over the wafer region of about m 3. For the base case with no dielectric layer, the system was near an antisymmetric mode resonance and exhibited significant wave effects and center-high nonuniformity. For the second configuration with a dielectric layer over the wafer electrode, the dielectric layer increased the effective sheath thickness and thereby the wavelengths of the radially propagating surface waves. This moved the system away from the near resonant conditions of the no dielectric layer case and lessened the wave effects. The higher the z eff ¼ z d /j d of the dielectric layer, the larger the increase in s 0 ¼ s þ z eff, k a and k s, and the greater the suppression of the wave effects. For the third configuration with a silicon wafer and dielectric layer over the wafer electrode, there is a critical resistivity q c given by Eq. (9) such that the skin depth is equal to the wafer thickness. A conducting wafer with q Si q c shorts out most of the fields and shields the discharge from the dielectric layer, while a highly resistive wafer with q Si q c lets the fields pass through to the dielectric layer. ACKNOWLEDGMENTS This work was supported by the Department of Energy Office of Fusion Energy Science (Contract No. DE-SC ), J. Vac. Sci. Technol. A, Vol. 35, No. 5, Sep/Oct 2017
10 05C311-9 Kawamura et al.: Effect of a dielectric layer on plasma uniformity 05C311-9 the National Natural Science Foundations of China (NSFC) (Grant No ), and the Important National Science and Technology Specific Project (Grant No. 2011ZX ). 1 M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, 2nd ed. (Wiley-Interscience, Hoboken, NJ, 2005). 2 L. Sansonnens and J. Schmitt, Appl. Phys. Lett. 82, 182 (2003). 3 A. Perret, P. Chabert, J. P. Booth, J. Jolly, J. Guillon, and Ph. Auvray, Appl. Phys. Lett. 83, 243 (2003). 4 M. A. Lieberman, J. P. Booth, P. Chabert, J. M. Rax, and M. M. Turner, Plasma Sources Sci. Technol. 11, 283 (2002). 5 P. Chabert, J. L. Raimbault, J. M. Rax, and M. A. Lieberman, Phys. Plasmas 11, 1775 (2004). 6 L. Sansonnens, A. A. Howling, and Ch. Hollenstein, Plasma Sources Sci. Technol. 15, 302 (2006). 7 I. Lee, M. A. Lieberman, and D. B. Graves, Plasma Sources Sci. Technol. 17, (2008). 8 S. Rauf, K. Bera, and K. Collins, Plasma Sources Sci. Technol. 17, (2008). 9 E. Kawamura, M. Lieberman, and D. B. Graves, Plasma Sources Sci. Technol. 23, (2014). 10 M. A. Lieberman, A. J. Lichtenberg, E. Kawamura, and P. Chabert, Phys. Plasmas 23, (2016). 11 Y. Yang and M. J. Kushner, Plasma Sources Sci. Technol. 19, (2010). 12 Y. Yang and M. J. Kushner, Plasma Sources Sci. Technol. 19, (2010). 13 Y. R. Zhang, S. X. Zhao, A. Bogaerts, and Y. N. Wang, Phys. Plasmas 17, (2010). 14 S. Rauf, Z. Chen, and K. Collins, J. Appl. Phys. 107, (2010). 15 Z. Chen, S. Rauf, and K. Collins, J. Appl. Phys. 108, (2010). 16 D. Eremin, T. Hemke, R. P. Brinkmann, and T. Mussenbrock, J. Phys. D: Appl. Phys. 46, (2013). 17 R. R. Upadhyay, I. Sawada, P. L. G. Ventzek, and L. L. Raja, J. Phys. D: Appl. Phys. 46, (2013). 18 I. Sawada, P. L. G. Ventzek, B. Lane, T. Ohshita, R. R. Upadhyay, and L. L. Raja, Jpn. J. Appl. Phys., Part 1 53, 03DB01 (2014). 19 M. A. Lieberman, A. J. Lichtenberg, E. Kawamura, and A. M. Marakhtanov, Plasma Sources Sci. Technol. 24, (2015). 20 E. Kawamura, A. J. Lichtenberg, M. A. Lieberman, and A. M. Marakhtanov, Plasma Sources Sci. Technol. 25, (2016). 21 D.-Q. Wen, E. Kawamura, M. A. Lieberman, A. J. Lichtenberg, and Y.-N. Wang, Plasma Sources Sci. Technol. 26, (2017). 22 E. Kawamura, D. B. Graves, and M. A. Lieberman, Plasma Sources Sci. Technol. 20, (2011). 23 E. G. Thorsteinsson and J. T. Gudmundsson, Plasma Sources Sci. Technol. 19, (2010). JVST A - Vacuum, Surfaces, and Films
2D Hybrid Fluid-Analytical Model of Inductive/Capacitive Plasma Discharges
63 rd GEC & 7 th ICRP, 2010 2D Hybrid Fluid-Analytical Model of Inductive/Capacitive Plasma Discharges E. Kawamura, M.A. Lieberman, and D.B. Graves University of California, Berkeley, CA 94720 This work
More informationMWP MODELING AND SIMULATION OF ELECTROMAGNETIC EFFECTS IN CAPACITIVE DISCHARGES
MWP 1.9 MODELING AND SIMULATION OF ELECTROMAGNETIC EFFECTS IN CAPACITIVE DISCHARGES Insook Lee, D.B. Graves, and M.A. Lieberman University of California Berkeley, CA 9472 LiebermanGEC7 1 STANDING WAVES
More information65 th GEC, October 22-26, 2012
65 th GEC, October 22-26, 2012 2D Fluid/Analytical Simulation of Multi-Frequency Capacitively-Coupled Plasma Reactors (CCPs) E. Kawamura, M.A. Lieberman, D.B. Graves and A.J. Lichtenberg A fast 2D hybrid
More informationNONLINEAR ELECTROMAGNETICS MODEL OF AN ASYMMETRICALLY DRIVEN CAPACITIVE DISCHARGE
NONLINEAR ELECTROMAGNETICS MODEL OF AN ASYMMETRICALLY DRIVEN CAPACITIVE DISCHARGE M.A. Lieberman Department of Electrical Engineering and Computer Sciences University of California Berkeley, CA 94720 Collaborators:
More informationEFFECT OF PRESSURE AND ELECTRODE SEPARATION ON PLASMA UNIFORMITY IN DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA TOOLS *
EFFECT OF PRESSURE AND ELECTRODE SEPARATION ON PLASMA UNIFORMITY IN DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA TOOLS * Yang Yang a) and Mark J. Kushner b) a) Department of Electrical and Computer Engineering
More informationFINAL REPORT. DOE Grant DE-FG03-87ER13727
FINAL REPORT DOE Grant DE-FG03-87ER13727 Dynamics of Electronegative Plasmas for Materials Processing Allan J. Lichtenberg and Michael A. Lieberman Department of Electrical Engineering and Computer Sciences
More informationMODELING AND SIMULATION OF LOW TEMPERATURE PLASMA DISCHARGES
MODELING AND SIMULATION OF LOW TEMPERATURE PLASMA DISCHARGES Michael A. Lieberman University of California, Berkeley lieber@eecs.berkeley.edu DOE Center on Annual Meeting May 2015 Download this talk: http://www.eecs.berkeley.edu/~lieber
More informationEquilibrium model for two low-pressure electronegative plasmas connected by a double layer
PHYSICS OF PLASMAS 13, 093504 2006 Equilibrium model for two low-pressure electronegative plasmas connected by a double layer P. Chabert, a N. Plihon, C. S. Corr, and J.-L. Raimbault Laboratoire de Physique
More informationHong Young Chang Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea
Hong Young Chang Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Republic of Korea Index 1. Introduction 2. Some plasma sources 3. Related issues 4. Summary -2 Why is
More informationMODELING PLASMA PROCESSING DISCHARGES
MODELING PROCESSING DISCHARGES M.A. Lieberman Department of Electrical Engineering and Computer Sciences University of California Berkeley, CA 94720 Collaborators: E. Kawamura, D.B. Graves, and A.J. Lichtenberg,
More informationCopyright 1996, by the author(s). All rights reserved.
Copyright 1996, by the author(s). All rights reserved. Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are
More informationPIC-MCC/Fluid Hybrid Model for Low Pressure Capacitively Coupled O 2 Plasma
PIC-MCC/Fluid Hybrid Model for Low Pressure Capacitively Coupled O 2 Plasma Kallol Bera a, Shahid Rauf a and Ken Collins a a Applied Materials, Inc. 974 E. Arques Ave., M/S 81517, Sunnyvale, CA 9485, USA
More informationPRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING
PRINCIPLES OF PLASMA DISCHARGES AND MATERIALS PROCESSING Second Edition MICHAEL A. LIEBERMAN ALLAN J, LICHTENBERG WILEY- INTERSCIENCE A JOHN WILEY & SONS, INC PUBLICATION CONTENTS PREFACE xrrii PREFACE
More informationPIC-MCC/Fluid Hybrid Model for Low Pressure Capacitively Coupled O 2 Plasma
PIC-MCC/Fluid Hybrid Model for Low Pressure Capacitively Coupled O 2 Plasma Kallol Bera a, Shahid Rauf a and Ken Collins a a Applied Materials, Inc. 974 E. Arques Ave., M/S 81517, Sunnyvale, CA 9485, USA
More informationNANOELECTRONICS AND PLASMA PROCESSING THE NEXT 15 YEARS AND BEYOND. Department of Electrical Engineering and Computer Sciences
NANOELECTRONICS AND PLASMA PROCESSING THE NEXT 15 YEARS AND BEYOND M.A. Lieberman Department of Electrical Engineering and Computer Sciences University of California Berkeley, CA 94720 Download this talk:
More informationDOE WEB SEMINAR,
DOE WEB SEMINAR, 2013.03.29 Electron energy distribution function of the plasma in the presence of both capacitive field and inductive field : from electron heating to plasma processing control 1 mm PR
More informationEffect of Gas Flow Rate and Gas Composition in Ar/CH 4 Inductively Coupled Plasmas
COMSOL CONFERENCE BOSTON 2011 Effect of Gas Flow Rate and Gas Composition in Ar/CH 4 Inductively Coupled Plasmas Keisoku Engineering System Co., Ltd., JAPAN Dr. Lizhu Tong October 14, 2011 1 Contents 1.
More informationPlasmas rf haute densité Pascal Chabert LPTP, Ecole Polytechnique
Plasmas rf haute densité Pascal Chabert LPTP, Ecole Polytechnique chabert@lptp.polytechnique.fr Pascal Chabert, 2006, All rights reserved Programme Introduction Généralité sur les plasmas Plasmas Capacitifs
More informationCONTROL OF UNIFORMITY IN CAPACITIVELY COUPLED PLASMAS CONSIDERING EDGE EFFECTS*
CONTROL OF UNIFORMITY IN CAPACITIVELY COUPLED PLASMAS CONSIDERING EDGE EFFECTS* Junqing Lu and Mark J. Kushner Department of Electrical and Computer Engineering at Urbana-Champaign mjk@uiuc.edu, jqlu@uiuc.edu
More informationThe low-field density peak in helicon discharges
PHYSICS OF PLASMAS VOLUME 10, NUMBER 6 JUNE 2003 Francis F. Chen a) Electrical Engineering Department, University of California, Los Angeles, Los Angeles, California 90095-1597 Received 10 December 2002;
More informationPlasma properties determined with induction loop probes in a planar inductively coupled plasma source
Plasma properties determined with induction loop probes in a planar inductively coupled plasma source J. A. Meyer, a) R. Mau, and A. E. Wendt b) Engineering Research Center for Plasma-Aided Manufacturing,
More informationPhysique des plasmas radiofréquence Pascal Chabert
Physique des plasmas radiofréquence Pascal Chabert LPP, Ecole Polytechnique pascal.chabert@lpp.polytechnique.fr Planning trois cours : Lundi 30 Janvier: Rappels de physique des plasmas froids Lundi 6 Février:
More informationA global (volume averaged) model of a chlorine discharge
A global (volume averaged) model of a chlorine discharge Eyþór Gísli Þorsteinsson and Jón Tómas Guðmundsson Science Institute, University of Iceland, Iceland Department of Electrical and Computer Engineering,
More informationRECENT PROGRESS ON THE PHYSICS
RECENT PROGRESS ON THE PHYSICS OF CAPACITIVE DISCHARGES M.A. Lieberman Department of Electrical Engineering and Computer Sciences University of California Berkeley, CA 94720 Download this talk: http://www.eecs.berkeley.edu/
More informationLow Temperature Plasma Technology Laboratory
Low Temperature Plasma Technology Laboratory Equilibrium theory for plasma discharges of finite length Francis F. Chen and Davide Curreli LTP-6 June, Electrical Engineering Department Los Angeles, California
More informationIII. Electromagnetic uniformity: finite RF wavelength in large area, VHF reactors: standing waves, and telegraph effect
III. Electromagnetic uniformity: finite RF wavelength in large area, VHF reactors: standing waves, and telegraph effect IV. Uniformity in time: minimize transients, rapid equilibration to steady-state
More informationFeature-level Compensation & Control
Feature-level Compensation & Control 2 Plasma Eray Aydil, UCSB, Mike Lieberman, UCB and David Graves UCB Workshop November 19, 2003 Berkeley, CA 3 Feature Profile Evolution Simulation Eray S. Aydil University
More informationK. Takechi a) and M. A. Lieberman Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720
JOURNAL OF APPLIED PHYSICS VOLUME 90, NUMBER 7 1 OCTOBER 2001 Effect of Ar addition to an O 2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O 2 ÕAr mixture plasma modeling
More informationWave propagation and power deposition in magnetically enhanced inductively coupled and helicon plasma sources
Wave propagation and power deposition in magnetically enhanced inductively coupled and helicon plasma sources Ronald L. Kinder a) and Mark J. Kushner b) Department of Electrical and Computer Engineering,
More informationContents: 1) IEC and Helicon 2) What is HIIPER? 3) Analysis of Helicon 4) Coupling of the Helicon and the IEC 5) Conclusions 6) Acknowledgments
Contents: 1) IEC and Helicon 2) What is HIIPER? 3) Analysis of Helicon 4) Coupling of the Helicon and the IEC 5) Conclusions 6) Acknowledgments IEC:! IEC at UIUC modified into a space thruster.! IEC has
More informationCharacterization of an Oxygen Plasma by Using a Langmuir Probe in an Inductively Coupled Plasma
Journal of the Korean Physical Society, Vol. 38, No. 3, March 001, pp. 59 63 Characterization of an Oxygen Plasma by Using a Langmuir Probe in an Inductively Coupled Plasma Jong-Sik Kim and Gon-Ho Kim
More informationTwo-dimensional Fluid Simulation of an RF Capacitively Coupled Ar/H 2 Discharge
Two-dimensional Fluid Simulation of an RF Capacitively Coupled Ar/H 2 Discharge Lizhu Tong Keisoku Engineering System Co., Ltd., Japan September 18, 2014 Keisoku Engineering System Co., Ltd., 1-9-5 Uchikanda,
More informationADVENTURES IN TWO-DIMENSIONAL PARTICLE-IN-CELL SIMULATIONS OF ELECTRONEGATIVE DISCHARGES
ADVENTURES IN TWO-DIMENSIONAL PARTICLE-IN-CELL SIMULATIONS OF ELECTRONEGATIVE DISCHARGES PART 1: DOUBLE LAYERS IN A TWO REGION DISCHARGE E. Kawamura, A.J. Lichtenberg, M.A. Lieberman and J.P. Verboncoeur
More informationPlasma Processing of Large Curved Surfaces for SRF Cavity Modification
Plasma Processing of Large Curved Surfaces for SRF Cavity Modification J. Upadhyay, 1 Do Im, 1 S. Popović, 1 A.-M. Valente-Feliciano, 2 L. Phillips, 2 and L. Vušković 1 1 Department of Physics - Center
More informationLee Chen, Merritt Funk, and Radha Sundararajan Tokyo Electron America, Austin, Texas 78741
Measurement of electron temperatures and electron energy distribution functions in dual frequency capacitively coupled CF 4 /O 2 plasmas using trace rare gases optical emission spectroscopy Zhiying Chen,
More informationarxiv: v1 [physics.plasm-ph] 16 Apr 2018
Consistent simulation of capacitive radio-frequency discharges and external matching networks Frederik Schmidt Institute of Theoretical Electrical Engineering, arxiv:1804.05638v1 [physics.plasm-ph] 16
More informationExploration COMSOL in Modeling RLSA TM CVD Processes
Exploration COMSOL in Modeling RLSA TM CVD Processes Ar+H 2 +SiH 4 +C 2 H 6 and Dopant Gas Jozef Brcka 1 *, Sundar Gandhi 2, Raymond Joe 2 1 Tokyo Electron U.S. Holdings, Inc., U.S. Technology Development
More informationPlasma Technology September 15, 2005 A UC Discovery Project
1 Feature-level Compensation & Control Plasma Technology September 15, 2005 A UC Discovery Project 9/15/05 - Plasma Technology 2 Plasma Technology Professors Jane P. Chang (UCLA), Michael A. Lieberman,
More informationPlasma Technology. FLCC Workshop & Review September 13, 2006 FLCC
1 Plasma Technology Professors Jane P. Chang (UCLA), Michael A. Lieberman, David B. Graves (UCB) and Allan J. Lichtenberg, John P. Verboncoeur, Alan Wu, Emi Kawamura, Chengche Hsu, Joe Vegh, Insook Lee
More informationPlasma Modeling with COMSOL Multiphysics
Plasma Modeling with COMSOL Multiphysics Copyright 2014 COMSOL. Any of the images, text, and equations here may be copied and modified for your own internal use. All trademarks are the property of their
More informationInfluence of driving frequency on the metastable atoms and electron energy distribution function in a capacitively coupled argon discharge
Influence of driving frequency on the metastable atoms and electron energy distribution function in a capacitively coupled argon discharge S. Sharma Institute for Plasma Research, Gandhinagar -382428,
More informationEffects of cross field diffusion in a low pressure high density oxygen/silane plasma
Effects of cross field diffusion in a low pressure high density oxygen/silane plasma C. Charles Citation: Journal of Vacuum Science & Technology A 20, 1275 (2002); doi: 10.1116/1.1481042 View online: http://dx.doi.org/10.1116/1.1481042
More informationNonlinear Diffusion in Magnetized Discharges. Francis F. Chen. Electrical Engineering Department
Nonlinear Diffusion in Magnetized Discharges Francis F. Chen Electrical Engineering Department PPG-1579 January, 1998 Revised April, 1998 Nonlinear Diffusion in Magnetized Discharges Francis F. Chen Electrical
More informationShapes of agglomerates in plasma etching reactors
Shapes of agglomerates in plasma etching reactors Fred Y. Huang a) and Mark J. Kushner b) University of Illinois, Department of Electrical and Computer Engineering, 1406 West Green Street, Urbana, Illinois
More informationPlasma Chemistry and Kinetics in Low Pressure Discharges
Plasma Chemistry and Kinetics in Low Pressure Discharges Jón Tómas Guðmundsson Science Institute, University of Iceland, Iceland tumi@hi.is 12o. Encontro Brasileiro de Física de Plasmas Brasilia, Brazil
More informationConsequences of asymmetric pumping in low pressure plasma processing reactors: A three-dimensional modeling study
Consequences of asymmetric pumping in low pressure plasma processing reactors: A three-dimensional modeling study Mark J. Kushner a) University of Illinois, Department of Electrical and Computer Engineering,
More informationETCHING Chapter 10. Mask. Photoresist
ETCHING Chapter 10 Mask Light Deposited Substrate Photoresist Etch mask deposition Photoresist application Exposure Development Etching Resist removal Etching of thin films and sometimes the silicon substrate
More informationLow Temperature Plasma Technology Laboratory
Low Temperature Plasma Technology Laboratory CHARACTERIZATION AND MODELING OF THE MØRI SOURCE Francis F. Chen and Donald Arnush FINAL REPORT, UC MICRO PROJECT 98-2 JOINTLY FUNDED BY APPLIED MATERIALS LTP-2
More informationLow-field helicon discharges
Plasma Phys. Control. Fusion 39 (1997) A411 A420. Printed in the UK PII: S0741-3335(97)80958-X Low-field helicon discharges F F Chen, X Jiang, J D Evans, G Tynan and D Arnush University of California,
More informationLow Temperature Plasma Technology Laboratory
Low Temperature Plasma Technology Laboratory CENTRAL PEAKING OF MAGNETIZED GAS DISCHARGES Francis F. Chen and Davide Curreli LTP-1210 Oct. 2012 Electrical Engineering Department Los Angeles, California
More informationElectromagnetic Waves
Electromagnetic Waves Maxwell s equations predict the propagation of electromagnetic energy away from time-varying sources (current and charge) in the form of waves. Consider a linear, homogeneous, isotropic
More informationNARROW GAP ELECTRONEGATIVE CAPACITIVE DISCHARGES AND STOCHASTIC HEATING
NARRW GAP ELECTRNEGATIVE CAPACITIVE DISCHARGES AND STCHASTIC HEATING M.A. Lieberman Deartment of Electrical Engineering and Comuter Sciences University of California Berkeley, CA 9472 Collaborators: E.
More informationMODELING OF AN ECR SOURCE FOR MATERIALS PROCESSING USING A TWO DIMENSIONAL HYBRID PLASMA EQUIPMENT MODEL. Ron L. Kinder and Mark J.
TECHCON 98 Las Vegas, Nevada September 9-11, 1998 MODELING OF AN ECR SOURCE FOR MATERIALS PROCESSING USING A TWO DIMENSIONAL HYBRID PLASMA EQUIPMENT MODEL Ron L. Kinder and Mark J. Kushner Department of
More informationSpatial distributions of power and ion densities in RF excited remote plasma reactors
Plasma Sources Sci. Technol. 5 (1996) 499 509. Printed in the UK Spatial distributions of power and ion densities in RF excited remote plasma reactors Irène Pérès and Mark J Kushner University of Illinois,
More informationModel for noncollisional heating in inductively coupled plasma processing sources
Model for noncollisional heating in inductively coupled plasma processing sources Shahid Rauf a) and Mark J. Kushner b) Department of Electrical and Computer Engineering, University of Illinois, 1406 West
More informationI. INTRODUCTION J. Vac. Sci. Technol. A 16 4, Jul/Aug /98/16 4 /2454/9/$ American Vacuum Society 2454
Consequences of three-dimensional physical and electromagnetic structures on dust particle trapping in high plasma density material processing discharges Helen H. Hwang, a) Eric R. Keiter, b) and Mark
More informationModélisation de sources plasma froid magnétisé
Modélisation de sources plasma froid magnétisé Gerjan Hagelaar Groupe de Recherche Energétique, Plasma & Hors Equilibre (GREPHE) Laboratoire Plasma et Conversion d Énergie (LAPLACE) Université Paul Sabatier,
More informationOne dimensional hybrid Maxwell-Boltzmann model of shearth evolution
Technical collection One dimensional hybrid Maxwell-Boltzmann model of shearth evolution 27 - Conferences publications P. Sarrailh L. Garrigues G. J. M. Hagelaar J. P. Boeuf G. Sandolache S. Rowe B. Jusselin
More informationMODELING OF SEASONING OF REACTORS: EFFECTS OF ION ENERGY DISTRIBUTIONS TO CHAMBER WALLS*
MODELING OF SEASONING OF REACTORS: EFFECTS OF ION ENERGY DISTRIBUTIONS TO CHAMBER WALLS* Ankur Agarwal a) and Mark J. Kushner b) a) Department of Chemical and Biomolecular Engineering University of Illinois,
More informationPIC/MCC Simulation of Radio Frequency Hollow Cathode Discharge in Nitrogen
PIC/MCC Simulation of Radio Frequency Hollow Cathode Discharge in Nitrogen HAN Qing ( ), WANG Jing ( ), ZHANG Lianzhu ( ) College of Physics Science and Information Engineering, Hebei Normal University,
More informationSimulation of a two-dimensional sheath over a flat insulator conductor interface on a radio-frequency biased electrode in a high-density plasma
JOURNAL OF APPLIED PHYSICS VOLUME 95, NUMBER 7 1 APRIL 2004 Simulation of a two-dimensional sheath over a flat insulator conductor interface on a radio-frequency biased electrode in a high-density plasma
More informationSimulation of a two-dimensional sheath over a flat wall with an insulatorõconductor interface exposed to a high density plasma
JOURNAL OF APPLIED PHYSICS VOLUME 94, NUMBER 5 1 SEPTEMBER 2003 Simulation of a two-dimensional sheath over a flat wall with an insulatorõconductor interface exposed to a high density plasma Doosik Kim
More informationSIMULATIONS OF ECR PROCESSING SYSTEMS SUSTAINED BY AZIMUTHAL MICROWAVE TE(0,n) MODES*
25th IEEE International Conference on Plasma Science Raleigh, North Carolina June 1-4, 1998 SIMULATIONS OF ECR PROCESSING SYSTEMS SUSTAINED BY AZIMUTHAL MICROWAVE TE(,n) MODES* Ron L. Kinder and Mark J.
More informationIn situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation
JOURNAL OF APPLIED PHYSICS VOLUME 88, NUMBER 4 15 AUGUST 2000 In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation C. Cismaru a) and J. L.
More informationPlasma atomic layer etching using conventional plasma equipment
Plasma atomic layer etching using conventional plasma equipment Ankur Agarwal a Department of Chemical and Biomolecular Engineering, University of Illinois, 600 S. Mathews Ave., Urbana, Illinois 61801
More informationNARROW GAP ELECTRONEGATIVE CAPACITIVE DISCHARGES AND STOCHASTIC HEATING
NARRW GAP ELECTRNEGATIVE CAPACITIVE DISCHARGES AND STCHASTIC HEATING M.A. Lieberman, E. Kawamura, and A.J. Lichtenberg Department of Electrical Engineering and Computer Sciences University of California
More informationArgon metastable densities in radio frequency Ar, Ar/O 2 and Ar/CF 4 electrical discharges
Argon metastable densities in radio frequency Ar, Ar/O 2 and Ar/CF 4 electrical discharges Shahid Rauf a) and Mark J. Kushner b) Department of Electrical and Computer Engineering, University of Illinois,
More informationPlasma abatement of perfluorocompounds in inductively coupled plasma reactors
Plasma abatement of perfluorocompounds in inductively coupled plasma reactors Xudong Peter Xu, a) Shahid Rauf, b) and Mark J. Kushner c) University of Illinois, Department of Electrical and Computer Engineering,
More informationElectron Density and Ion Flux in Diffusion Chamber of Low Pressure RF Helicon Reactor
WDS'06 Proceedings of Contributed Papers, Part II, 150 155, 2006. ISBN 80-86732-85-1 MATFYZPRESS Electron Density and Ion Flux in Diffusion Chamber of Low Pressure RF Helicon Reactor R. Šmíd Masaryk University,
More informationINTRODUCTION TO THE HYBRID PLASMA EQUIPMENT MODEL
INTRODUCTION TO THE HYBRID PLASMA EQUIPMENT MODEL Prof. Mark J. Kushner Department of Electrical and Computer Engineering 1406 W. Green St. Urbana, IL 61801 217-144-5137 mjk@uiuc.edu http://uigelz.ece.uiuc.edu
More informationOPTIMIZATION OF PLASMA UNIFORMITY USING HOLLOW-CATHODE STRUCTURE IN RF DISCHARGES*
51th Gaseous Electronics Conference & 4th International Conference on Reactive Plasmas Maui, Hawai i 19-23 October 1998 OPTIMIZATION OF PLASMA UNIFORMITY USING HOLLOW-CATHODE STRUCTURE IN RF DISCHARGES*
More informationDepartment of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, Texas 78712, USA
1 MAGNETIZED DIRECT CURRENT MICRODISCHARGE, I: EFFECT OF THE GAS PRESSURE Dmitry Levko and Laxminarayan L. Raja Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at
More informationFrequency variation under constant power conditions in hydrogen radio frequency discharges
JOURNAL OF APPLIED PHYSICS VOLUME 89, NUMBER 3 1 FEBRUARY 2001 Frequency variation under constant power conditions in hydrogen radio frequency discharges E. Amanatides and D. Mataras a) Plasma Technology
More informationINVESTIGATION of Si and SiO 2 ETCH MECHANISMS USING an INTEGRATED SURFACE KINETICS MODEL
46 th AVS International Symposium Oct. 25-29, 1999 Seattle, WA INVESTIGATION of Si and SiO 2 ETCH MECHANISMS USING an INTEGRATED SURFACE KINETICS MODEL Da Zhang* and Mark J. Kushner** *Department of Materials
More informationAn Improved Global Model for Electronegative Discharge and Ignition Conditions for Peripheral Plasma Connected to a Capacitive Discharge
An Improved Global Model for Electronegative Discharge and Ignition Conditions for Peripheral Plasma Connected to a Capacitive Discharge Sungjin Kim Electrical Engineering and Computer Sciences University
More informationNANOELECTRONICS AND PLASMA PROCESSING THE NEXT 15 YEARS AND BEYOND
NANOELECTRONICS AND PROCESSING THE NEXT 15 YEARS AND BEYOND M.A. Lieberman Department of Electrical Engineering and Computer Sciences University of California Berkeley, CA 94720 Download this talk: http://www.eecs.berkeley.edu/
More informationNumerical Simulation: Effects of Gas Flow and Rf Current Direction on Plasma Uniformity in an ICP Dry Etcher
Appl. Sci. Converg. Technol. 26(6): 189-194 (2017) http://dx.doi.org/10.5757/asct.2017.26.6.189 Research Paper Numerical Simulation: Effects of Gas Flow and Rf Current Direction on Plasma Uniformity in
More informationTwo-dimensional simulation of a miniaturized inductively coupled plasma reactor
JOURNAL OF APPLIED PHYSICS VOLUME 95, NUMBER 5 1 MARCH 2004 Two-dimensional simulation of a miniaturized inductively coupled plasma reactor Sang Ki Nam and Demetre J. Economou a) Plasma Processing Laboratory,
More informationPlasma Diagnosis for Microwave ECR Plasma Enhanced Sputtering Deposition of DLC Films
Plasma Science and Technology, Vol.14, No.2, Feb. 2012 Plasma Diagnosis for Microwave ECR Plasma Enhanced Sputtering Deposition of DLC Films PANG Jianhua ( ) 1, LU Wenqi ( ) 1, XIN Yu ( ) 2, WANG Hanghang
More informationPlasma Processing in the Microelectronics Industry. Bert Ellingboe Plasma Research Laboratory
Plasma Processing in the Microelectronics Industry Bert Ellingboe Plasma Research Laboratory Outline What has changed in the last 12 years? What is the relavant plasma physics? Sheath formation Sheath
More informationMODERN PHYSICS OF PLASMAS (19 lectures)
UNIT OF STUDY OUTLINE (PHYS 3021, 3921, 3024, 3924, 3025, 3925) MODERN PHYSICS OF PLASMAS (19 lectures) Course coordinator and principal lecturer: Dr Kostya (Ken) Ostrikov Lecturer (normal student stream,
More informationCharacteristics of Positive Ions in the Sheath Region of Magnetized Collisional Electronegative Discharges
Plasma Science and Technology, Vol.6, No.6, Jun. 204 Characteristics of Positive Ions in the Sheath Region of Magnetized Collisional Electronegative Discharges M. M. HATAMI, A. R. NIKNAM 2 Physics Department
More informationAngular anisotropy of electron energy distributions in inductively coupled plasmas
JOURNAL OF APPLIED PHYSICS VOLUME 94, NUMBER 9 1 NOVEMBER 2003 Angular anisotropy of electron energy distributions in inductively coupled plasmas Alex V. Vasenkov a) and Mark J. Kushner b) Department of
More informationElectrical Discharges Characterization of Planar Sputtering System
International Journal of Recent Research and Review, Vol. V, March 213 ISSN 2277 8322 Electrical Discharges Characterization of Planar Sputtering System Bahaa T. Chaid 1, Nathera Abass Ali Al-Tememee 2,
More informationFloating probe for electron temperature and ion density measurement applicable to processing plasmas
JOURNAL OF APPLIED PHYSICS 101, 033305 2007 Floating probe for electron temperature and ion density measurement applicable to processing plasmas Min-Hyong Lee, Sung-Ho Jang, and Chin-Wook Chung a Department
More informationMultidimensional Numerical Simulation of Glow Discharge by Using the N-BEE-Time Splitting Method
Plasma Science and Technology, Vol.14, No.9, Sep. 2012 Multidimensional Numerical Simulation of Glow Discharge by Using the N-BEE-Time Splitting Method Benyssaad KRALOUA, Ali HENNAD Electrical Engineering
More informationElectron Energy Distributions in a Radiofrequency Plasma. Expanded by Permanent Magnets
J. Plasma Fusion Res. SERIES, Vol. 9 (21) Electron Energy Distributions in a Radiofrequency Plasma Expanded by Permanent Magnets Tomoyo SASAKI, Kazunori TAKAHASHI, and Tamiya FUJIWARA Department of Electrical
More informationInfluence of vibrational kinetics in a low pressure capacitively coupled hydrogen discharge
Influence of vibrational kinetics in a low pressure capacitively coupled hydrogen discharge L. Marques 1, A. Salabas 1, G. Gousset 2, L. L. Alves 1 1 Centro de Física dos Plasmas, Instituto Superior Técnico,
More informationDiffusion during Plasma Formation
Chapter 6 Diffusion during Plasma Formation Interesting processes occur in the plasma formation stage of the Basil discharge. This early stage has particular interest because the highest plasma densities
More informationPARTICLE CONTROL AT 100 nm NODE STATUS WORKSHOP: PARTICLES IN PLASMAS
PARTICLE CONTROL AT 100 nm NODE STATUS WORKSHOP: PARTICLES IN PLASMAS Mark J. Kushner University of Illinois Department of Electrical and Computer Engineering Urbana, IL 61801 mjk@uiuc.edu December 1998
More informationThe Gaseous Electronic Conference GEC reference cell as a benchmark for understanding microelectronics processing plasmas*
PHYSICS OF PLASMAS VOLUME 6, NUMBER 5 MAY 1999 The Gaseous Electronic Conference GEC reference cell as a benchmark for understanding microelectronics processing plasmas* M. L. Brake, J. Pender, a) and
More informationDEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD
Chapter 4 DEPOSITION OF THIN TiO 2 FILMS BY DC MAGNETRON SPUTTERING METHOD 4.1 INTRODUCTION Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering
More informationGeneralized theory of annularly bounded helicon waves
PHYSICS OF PLASMAS 14, 033510 2007 Generalized theory of annularly bounded helicon waves Masayuki Yano a and Mitchell L. R. Walker b Department of Aerospace Engineering, Georgia Institute of Technology,
More informationAnalysis of Particle Contamination in Plasma Reactor by 2-Sized Particle Growth Model
Korean J. Chem. Eng., 20(2), 392-398 (2003) Analysis of Particle Contamination in Plasma Reactor by 2-Sized Particle Growth Model Dong-Joo Kim, Pil Jo Lyoo* and Kyo-Seon Kim Department of Chemical Engineering,
More informationCharacterization of low pressure plasma-dc glow discharges (Ar, SF 6 and SF 6 /He) for Si etching
Indian Journal of Pure & Applied Physics Vol. 48, October 2010, pp. 723-730 Characterization of low pressure plasma-dc glow discharges (Ar, SF 6 and SF 6 /He) for Si etching Bahaa T Chiad a, Thair L Al-zubaydi
More informationDust formation and charging in an Ar/SiH4 radiofrequency
Dust formation and charging in an Ar/SiH4 radiofrequency discharge Stoffels - Adamowicz, E.; Stoffels, W.W.; Kroesen, G.M.W.; de Hoog, F.J. Published in: Journal of Vacuum Science and Technology. A: Vacuum,
More informationPlasma heating in stellarators at the fundamental ion cyclotron frequency
PHYSICS OF PLASMAS VOLUME 7, NUMBER FEBRUARY 000 Plasma heating in stellarators at the fundamental ion cyclotron frequency V. A. Svidzinski and D. G. Swanson Department of Physics, Auburn University, Auburn,
More informationHelicon Plasma Thruster Experiment Controlling Cross-Field Diffusion within a Magnetic Nozzle
Helicon Plasma Thruster Experiment Controlling Cross-Field Diffusion within a Magnetic Nozzle IEPC-2013-163 Presented at the 33rd International Electric Propulsion Conference, The George Washington University
More informationSPUTTER-WIND HEATING IN IONIZED METAL PVD+
SPUTTER-WIND HEATING IN IONIZED METAL PVD+ Junqing Lu* and Mark Kushner** *Department of Mechanical and Industrial Engineering **Department of Electrical and Computer Engineering University of Illinois
More informationTwo-dimensional Numerical Simulation of a Planar Radio-frequency Atmospheric Pressure Plasma Source
Two-dimensional Numerical Simulation of a Planar Radio-frequency Atmospheric Pressure Plasma Source Lei Wang 1*, Gheorghe Dscu, Eusebiu-Rosini Ionita, Christophe Leys 1, Anton Yu Nikiforov 1 1 Department
More information