Ordering Information Type / Ordering Code Package Marking Related links IGT60R070D1 PG-HSOF R070D1 see Appendix A

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IGT6R7D IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction G

Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI Gate 8 Drain drain contact Kelvin Source 7 Source,2,3,4,5,6 Applications Industrial, telecom,

1 IGT6R7D IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction G SK Low gate charge, low output charge Superior commutation ruggedness Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) SK G Benefits Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI Gate 8 Drain drain contact Kelvin Source 7 Source,2,3,4,5,6 Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review CoolGaN reliability white paper and contact Infineon regional support Table Key Performance Parameters at T j = 25 C Parameter Value Unit V DS,max 6 V R DS(on),max 7 mω Q G,typ 5.8 nc I D,pulse 6 A Q 4 V 4 nc Q rr nc Table 2 Ordering Information Type / Ordering Code Package Marking Related links IGT6R7D PG-HSOF-8-3 6R7D see Appendix A Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev

2 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Table of Contents Features.... Benefits.. Applications... Table of Contents...2 Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix Revision History...6 Final Data Sheet 2 Rev

3 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Maximum ratings at T j = 25 C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office. Table 3 Maximum ratings Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Drain Source Voltage V DS,max V V GS = V Continuous current, drain source I D A T C = 25 C; T j = T j, max T C = C; T j = T j, max T C = 25 C; T j = T j, max Pulsed current, drain source 2 3 I D,pulse A T C = 25 C; I G = 26. ma; See Figure 3; Figure 5; Pulsed current, drain source 3 4 I D,pulse A T C = 25 C; I G = 26. ma; See Figure 4; Figure 6; Gate current, continuous I G,avg ma T j = -55 C to 5 C; Gate current, pulsed 3 5 I G,pulse ma T j = -55 C to 5 C; t PULSE = 5 ns, f= khz Gate source voltage, continuous 5 V GS V T j = -55 C to 5 C; Gate source voltage, pulsed 5 V GS,pulse V T j = -55 C to 5 C; t PULSE = 5 ns, f = khz; open drain Power dissipation P tot W T C = 25 C Operating temperature T j C Storage temperature T stg C Max shelf life depends on storage conditions. Drain-source voltage slew-rate dv/dt 2 V/ns All devices are % tested at IDS = 2.2 ma to assure VDS 8 V 2 Limits derived from product characterization, parameter not measured during production 3 Ensure that average gate drive current, IG,avg is 2 ma. Please see figure 27 for IG,avg, IG,pulse and IG details 4 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application. 5 We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for details. Final Data Sheet 3 Rev

4 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor 2 Thermal characteristics Table 4 Thermal characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case R thjc - - C/W Thermal resistance, junction-ambient R thja C/W Device on PCB, minimum footprint Thermal resistance, junction-ambient for SMD version R thja C/W Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7μm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Reflow soldering temperature T sold C MSL3 Final Data Sheet 4 Rev

5 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor 3 Electrical characteristics at T j = 25 C, unless specified otherwise Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate threshold voltage V GS(th) Drain-Source leakage current - I DSS Drain-Source leakage current at application conditions I DSSapp μa Gate-Source leakage current I GSS Drain-Source on-state resistance RDS(on) - Gate resistance V I DS = 2.6 ma; V DS = V; T j =25 C I DS = 2.6 ma; V DS = V; T j =25 C µa V DS = 6 V; V GS = V; T j = 25 C V DS = 6 V; V GS = V; T j = 5 C V DS = 4 V; V GS = V; T j = 25 C ma V DS = V; V GS = - V; T j = 25 C V DS = V; V GS = - V; T j = 25 C Ω I G = 26. ma; I D = 8 A; T j = 25 C I G = 26. ma; I D = 8 A; T j = 5 C R G,int Ω LCR impedance measurement; f = f res ; open drain; Table 6 Dynamic characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Input capacitance C iss pf Output capacitance C oss pf V GS = V; V DS = 4 V; f = MHz V GS = V; V DS = 4 V; f = MHz Reverse Transfer capacitance C rss pf V GS = V; V DS = 4 V; f = MHz Effective output capacitance, energy related 2 C o(er) pf V DS = to 4 V Effective output capacitance, time related 3 C o(tr) pf V GS = V; V DS = to 4 V; Id = const Output charge Q oss nc V DS = to 4 V Turn- on delay time t d(on) ns see Figure 23 Turn- off delay time t d(off) ns see Figure 23 Rise time t r ns see Figure 23 Fall time t f ns see Figure 23 Parameter represents end of use leakage in applications 2 C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 4 V 3 C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from to 4 V Final Data Sheet 5 Rev

6 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Table 7 Gate charge characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate charge Q G nc IGS = to ma; VDS= 4 V; I D= 8 A Table 8 Reverse conduction characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Source-Drain reverse voltage V SD V V GS = V; I SD = 8 A Pulsed current, reverse I S,pulse A I G = 26. ma Reverse recovery charge Q rr - - nc I S = 8 A, V DS = 4 V Reverse recovery time t rr - - ns Peak reverse recovery current I rrm - - A Excluding Qoss Final Data Sheet 6 Rev

7 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor 4 Electrical characteristics diagrams at T j = 25 C, unless specified otherwise Figure Power dissipation Figure 2 Max. transient thermal impedance 4 2. P TOTAL (W) Z thjc ( C/W). D= single pulse Rectangular Pulse Duration (ms) T CASE ( C) P tot =f(t c ) Z thjc =f(t p, D) Figure 3 Safe operating area Figure 4 Safe operating area tp = μs tp = 2 ns tp = 2 ns Limited by R DS(on) tp = ms DC tp = μs Limited by R DS(on) DC tp = μs tp = ms tp = μs I D (A) I D (A)... V DS (V). V DS (V) I D =f(v DS ); T C = 25 C I D =f(v DS ); T C = 25 C Final Data Sheet 7 Rev

8 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Figure 5 Repetitive safe operating area Figure 6 Repetitive safe operating area tp 2ns 5 4 Limited by R DS(on) 4 I D [A] 3 2 I D [A] 3 2 Limited by R DS(on) tp 2ns V DS [V] V DS [V] Tc = 25 C; T j 5 C Tc = 25 C; T j 5 C Figure 7 Typ. output characteristics Figure 8 Typ. output characteristics I G =26. ma 8 7 I G = ma 7 6 I G =2.6 ma 6 I G =26. ma I D [A] 5 4 I G = ma I G =.26 ma I G =. ma I D [A] 5 4 I G = ma I G =2.6 ma I G = ma 3 3 I G =.26 ma 2 2 I G =. ma V DS [V] V DS [V] I D =f(v DS,I G); T j = 25 C I D =f(v DS,I G); T j = 25 C Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application. Final Data Sheet 8 Rev

9 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Figure 9 Typ. Drain-source on-state resistance Figure Drain-source on-state resistance I G =.26 ma 2 R DS(on) (mω) I G =. ma I G = ma I G = ma I G =2.6 ma I G =26. ma R DS(on) [mω] V GS = 3 V I G = 26. ma I D [A] T j [ o C] R DS(on) =f(i D,I G); T j = 25 C R DS(on) =f(t j ); I D = 8 A Figure Typ. gate characteristics forward Figure 2 Typ. gate characteristics reverse V GS (V) I GS (ma) C 25 C I GS (ma) C V GS (V) -35 I GS =f(v GS,T j ); open drain I GS =f(v GS ); T j = 25 C Final Data Sheet 9 Rev

10 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Figure 3 Typ. transfer characteristics Figure 4 Typ. transfer characteristics I D (A) 4 3 I G (ma) 25 2 I D (A) I G (ma) V GS (V) V GS (V) I D, I G =f(v GS ); V DS = 8 V; T j = 25 C I D, I G =f(v GS ); V DS = 8 V ; T j = 25 C Figure 5 Typ. channel reverse characteristics Figure 6 Typ. channel reverse characteristics V DS (V) V DS (V) I D (A) -5 I D (A) -5V -4V -3V -2V -V V V GS V -4V -3V -2V -V V V GS V DS =f(i D, V GS); T j = 25 C V DS =f(i D, V GS); T j = 25 C Final Data Sheet Rev

11 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Figure 7 Typ. channel reverse characteristics Figure 8 Typ. channel reverse characteristics V 5 V +4V 4 4 V I S (A) 3 I S (A) V SD (V) V SD (V) I D =f(v DS, V GS); T j = 25 C I D =f(v DS, V GS); T j = 25 C Figure 9 Typ. gate charge Figure 2 Typ. capacitances 3.5,. Ciss 3. V GS (V) C (pf).. Coss..5. Crss Q (nc) V DS (V) V GS = f(q G); V DCLINK = 4 V; I D = 8 A C xss = f(v DS) Final Data Sheet Rev

12 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor Figure 2 Typ. output charge Figure 22 Typ. Coss stored Energy Q OSS (nc) E OSS (µj) V DS (V) V DS (V) Q OSS = f(v DS) E OSS = f(v DS) Final Data Sheet 2 Rev

13 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor 5 Test Circuits Figure 23 Switching times with inductive load Figure 24 Switching times waveform D R SS T R ON C G G L R OFF R ON R SS C G SK G T2 + S D I D VDS 4V t SK R OFF S I D = 8A, R ON = Ω; R OFF = Ω; R SS= 82 Ω; C G= 2 nf; V DRV = 2V Figure 25 Reverse Channel Characteristics Test Figure 26 Typical Reverse Channel Recovery D R SS T R ON C G G L R OFF R SS SK T2 + S D I D 4V R ON C G G VDS SK R OFF S I D = 8A, R ON = Ω; R OFF = Ω; R SS= 82 Ω; C G= 2 nf; V DRV = 2V The recovery charge is Q OSS only, no additional Q rr Figure 27 Gate current switching waveform I G,pulse I G I G, avg t Final Data Sheet 3 Rev

14 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor 6 Package Outlines Figure 28 PG-HSOF-8-3 Package Outline, dimensions (mm) Final Data Sheet 4 Rev

15 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor 7 Appendix A Table 9 Related links IFX CoolGaN TM webpage: IFX CoolGaN TM reliability white paper: IFX CoolGaN TM gate drive application note: IFX CoolGaN TM applications information: o o o o Final Data Sheet 5 Rev

16 IGT6R7D 6V CoolGaN enhancement-mode Power Transistor 8 Revision History Major changes since the last revision Revision Date Description of change Final version release Updated application section; added Appendix A and Fig. 27; updated maximum rating table footnotes, switching times and figures. Final Data Sheet 6 Rev

17 Trademarks of Infineon Technologies AG µhvic, µipm, µpfc, AU-ConvertIR, AURIX, C66, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC, DAVE, DI-POL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR, HEXFET, HITFET, HybridPACK, imotion, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, my-d, NovalithIC, OPTIGA, OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PRO-SIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH, SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC Trademarks updated November 25 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 8726 München, Germany 28 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? erratum@infineon.com Document reference ifx IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Ordering Information Type / Ordering Code Package Marking Related links IGO60R070D1 PG-DSO R070D1 NA

Ordering Information Type / Ordering Code Package Marking Related links IGO60R070D1 PG-DSO R070D1 NA IGO6R7D IGO6R7D 6V CoolGaN enhancementmode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverserecovery charge Capable of reverse conduction 2 2 Low