Hamatech Mask Mask processor User Manual

Transcription

1 EPFL Swiss Institute of Technology Lausanne Page 1 CMi Center of MicroNanoTechnology Hamatech Mask Mask processor User Manual Version of Get the latest one at 1. Introduction This user manual explains how to operate the Hamatech HMR 900 mask-processor. 2. Login & System Initialization Login on Hamatech mask Processor with CAE on zone 6 accounting computer. In case of power off (no display) start with o power on to activate display. A short initialize sequence runs automatically. Lines and chamber rinse with water. If not working see point No 7 FAQ. Check the position of the plate corners as pointed out Rotate plate both direction briefly but firmly to check that plate movement results to consistent chuck rotation 5. Choose a recipe Available recipe for standard application: Prg: Name Purpose/ (min:sec) 3. Preparation: Chuck Loading Chuck for 4, 5 and 6 inch Cr-plate is installed.by default (triple stage edge clamps). A special chuck for processing 7 inch Cr-plate is also available. (single stage edge clamps). Chuck switch requires any specific tool. 4. Preparation: Load Cr-plate Line purge with DI is recommended as soon as the tool was in idle mode for more than 2 hours. In case of doubt always run the purge sequence first with a dummy glass plate Put the mask to process correctly inside the 4 corners at the stage adapted to the Cr-plate size. o! Take care! o No vacuum is used to fix the plate during processing. Safe position need to be check at least for 2 corners 1 (08:30) 11 (08:30) 5 (03:00) 8 (04:15) DEV/ETCH/STRIP (Prog in one) LOW D/E/S (Prog in one) RINSE/DRY 50s Lines Purge Full mask fabrication process (4 to 5 inch Crplate). Include standard development, Cr etching, resist stripping and final rinse dry Lower rotation speed for large size or thick mask (6 to 7 inch Cr-plate). Include standard development, Cr etching, resist stripping and final rinse dry. As final rinse and drying sequence after a manual stop. For use after long standby period ( > 6 hours)! Use dummy glass plate! 1

2 Additional recipe are available to precede step by step. (See full listing of recipe in annexe I) EPFL Swiss Institute of Technology Lausanne Page 2 CMi Center of MicroNanoTechnology By default equipment is in automatic mode. Display at idle looks like. Example idle mode. Program No 5 selected 1 Use simple arrows up/down to navigate in available programs Press Quit. ( ).to continue Recipe starts and run till end of last step. Current step with parameters are displayed on line. Safety door open at end of process. Message will disappear after a few seconds. Next recipe Previous recipe To start the recipe Press start. In case warning for temperature occurs. 6. Unload and Close Chamber is rinsed by remains wet. Remove plate from the chuck without touching the walls or the chuck. Some DI-water moister still remains at the very center of the plate backside. Press F8 to stop the beep and Warning for N2 missing beep. Press F8 to stop the beep. Front safety door will close. Wait for rise up of canisters pressure to be stable (Tank 6 > 2 bars)! Take care! The gun at the left chamber side is not a dry nitrogen gun but a water washer for safety use after any unexpected stops. We recommend to let the mask dry in air for 30 minute before use. (A specific storage/drying area is available in the Plade wetbench divers in zone 6) Don t forget to sign out immediately after unloading. 2

3 EPFL Swiss Institute of Technology Lausanne Page 3 CMi Center of MicroNanoTechnology 7. FAQ 7.1 Initialization at power on: A dummy plate was inserted and not accessible. Dummy is wet and need to be removed: Power on and next Run program No 5 RINSE/DRY and removed it 7.2 ON button did not light: Release EMO (Emergency Off button) or call for the staff 60 sec and next try to run program No 5 to finish with a standard rinse and drying sequence Proceed with manual rinse before unloading any plate after any abrted runs (corrosive liquid may be inside chamber) 7.3 Initialization stops with door not closed error You probably forgot to sign in to access the tool. Use DI-water gun/washer to rinse inside chamber (including the plate inserted on the chuck) Press water gun button simultaneously with the gun trigger Login on Hamatech mask Processor with CAE on zone 6 accounting computer. and press Quit 7.4 Tank refill error: Call staff for refill. No handling of chemicals by users allowed 7.5 Process was stopped by user or by unexpected alarm: Take care of presence of active chemicals on the plate inside the chamber and of the walls of the chamber. A manual rinse is mandatory to avoid contamination with corrosive liquid dispensed during the process. A water gun feed with deionized water is available on the left side of the chamber. Wash chamber walls and plate for about 3

4 Annexe I HamaTech HMR 900 Nozzle function p.2 Prog#1 Dev/Etch/Strip p.3 Prog#2 Dev/Etch p.4 Prog#3 ETCH/STRIP p.5 Prog#4 STRIP_KOH p.6 Prog#5 RINSE/DRY p.7 Prog#6 DEVELOP 90SEC p.8 Prog#7 ETCH 80SEC Prog#8 LINES PURGE p.9 Prog#11 LOW SPEED D/E/S p.10 Prog#13 LOW SPEED E/S p.11 Prog#16 LOW SPEED D90S p.12 1

5 Hamatech Tanks, Media and Nozzles May 2016 No location Description/ color Media 1 Media OutP Purge OutP Waste OutL Type Comment Used in recipe 1 Nozzle 1 DI water A4 1 2 Nozzle 2 Striper AZ400K (KOH 1A14 A1 1 1, 3, 4, 8 3 Nozzle 3 DI water 4 Nozzle 4 CR01 etch A15 A3 3 1, 2, 6, 8 5 Acid arm H2SO4 A11 + A12 A11? A12 2 9, 6 Full jet DI water A6 A7 1 9, 10, 7 Nozzle 7 DEVELOPER (AZ351 1: A16 A5 1 1, 3, 7, 8 8 BS Back side DI water A2 1 8, 9, 9 Back side Purge DI water A9 1, 2, 3, 5, 6, 7, 8, 9, 10, 10 Back side Purge DI water A10 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 CR Chamber+BS Purge DI water A8 1, 2, 3, 5, 6, 7, 9, 10, 6 jaune n'existe pas Drain 1 Corrosif Drain 2 Non connecté Drain 3 Neutralisation

6 ProgramNo 1 Process DEVELOP/ETCH/STRIP Step Step time Ramp Speed Tol. Speed OutP Waste Unit fkt Pos V Comment Chemistry , Develop purge , Develop Dev AZ 351: DI 1: , Develop Dev AZ 351: DI 1: , Develop Dev AZ 351: DI 1: , 9, Developer purge, BS Neutralize , 8, 9, Developer purge, BS Rinse, Chamber rinse , 10, BS Neutralize , 15, Cr etch purge Wait for valves , Cr etch (delayed) CR , Cr etch (effective) CR , 9, 10, CR etch purge, BS Neutralize , 8, 9, 10, Cr etch purge, BS Rinse, Chamber rinse , BS Neutralize , Striper KOH 30% AZ 400K pur , Striper KOH30%, BS Neutralize AZ 400K pur , Striper KOH purge , 10, DI water+co2 top+bottom , 10, DI water+co2 top+bottom , BS neutralize Drying Finish 25 Tot: Last mod slow down 150 >90 for better wetting

7 ProgramNo 2 Process DEVELOP/ETCH Step Step time Ramp Speed Tol. Speed OutP WasteUnit fkt Pos V Comment Chemistry , Develop purge , Develop Dev AZ 351: DI 1: , Develop Dev AZ 351: DI 1: , Develop Dev AZ 351: DI 1: , 9, Developer purge, BS Neutralize , 8, 9, Developer purge, BS Rinse, Chamber rinse , 10, BS Neutralize , 15, Cr etch purge Wait for valves , Cr etch (delayed) CR , Cr etch (effective) CR , 9, 10, CR etch purge, BS Neutralize , 8, 9, 10, Cr etch purge, BS Rinse, Chamber rinse , BS Neutralize Drying Finish Tot: Last mod slow down 150 >90 for better wetting IMPORTANT Take care to limit acc/decc below 150 rpm/s

8 ProgramNo 3 Process ETCH/STRIP Step Step time Ramp Speed Tol. Speed OutP WasteUnit fkt Pos V Comment Chemistry , 15, Cr etch purge Wait for valves , Cr etch (delayed) , Cr etch (effective) , 9, 10, CR etch purge, BS Neutralize , 8, 9, 10, Cr etch purge, BS Rinse, Chamber rinse , BS Neutralize , Striper KOH 30% , Striper KOH30%, BS Neutralize , Striper KOH purge , 10, DI water+co2 top+bottom , 10, DI water+co2 top+bottom , BS neutralize Drying Finish 18 Tot: Last mod. ###### IMPORTANT Take care to limit acc/decc below 150 rpm/s

9 ProgramNo 4 Process STRIP_KOH Step Step time Ramp Speed Tol. Speed OutP WasteUnit fkt Pos V Comment Chemistry , Striper KOH 30% , Striper KOH30%, BS Neutralize , Striper KOH purge , 10, DI water+co2 top+bottom , 10, DI water+co2 top+bottom , BS neutralize sec en test pour KOH non dilué Tot: 215 Last mod. IMPORTANT Take care to limit acc/decc below 150 rpm/s

10 ProgramNo 5 Process RINSE/DRY Step Step time Ramp Speed Tol. Speed OutP WasteUnit fkt Pos V Comment Chemistry , 9, 10, BS Rinse, Chamber rinse , 9, 10, BS Rinse, Chamber rinse , 9, 10, BS Rinse, Chamber rinse , 9, 10, BS neutralize Drying Finish Tot: 173 Last mod. IMPORTANT Take care to limit acc/decc below 150 rpm/s

11 ProgramNo 6 Process DEVELOP 90SEC Step Step time Ramp Speed Tol. Speed OutP WasteUnit fkt Pos V Comment Chemistry , Develop purge , Develop , Develop Dev AZ 351: DI 1:4 > update to 1: , Develop , 9, Developer purge, BS Neutralize , 8, 9, Developer purge, BS Rinse, Chamber rinse , 10, BS Neutralize Dry Tot: 251 Last mod slow down 150 >90 for better wetting IMPORTANT Take care to limit acc/decc below 150 rpm/s

12 ProgramNo 7 Process ETCH 80SEC Step Step time Ramp Speed Tol. Speed OutP WasteUnit fkt Pos V Comment Chemistry , 15, Cr etch purge , Wait for valves , cycle vanne , 15, Wait for valves , Cr etch (delayed) , Cr etch (effective) , 9, 10, CR etch purge, BS Neutralize , 8, 9, 10, Cr etch purge, BS Rinse, Chamber rinse , BS Neutralize Dry Tot: Last mod. IMPORTANT Take care to limit acc/decc below 150 rpm/s

13 ProgramNo 8 Process LINES PURGE Step Step time Ramp Speed Tol. Speed OutP Waste Unit fkt Pos , , , 8, 9, , , 15, , , 10, , 8, 9, 10, , , , 10, , 10, , Tot: 255 Last mod

14 ProgramNo 11 Process LOW D/E/S Step Step time Ramp Speed Tol. Speed OutP WasteUnit funct Pos V Chemistry Action , Develop purge , DeveloDev AZ 351: DI 1: , DeveloDev AZ 351: DI 1: , DeveloDev AZ 351: DI 1: , 9, Developer purge, BS Neutralize , 8, 9, Developer purge, BS Rinse, Chamber rinse , 10, BS Neutralize , 15, Cr etch purge Wait for valves , Cr etc CR , Cr etc CR , 9, 10, CR etch purge, BS Neutralize , 8, 9, 10, Cr etch purge, BS Rinse, Chamber rinse , BS Neutralize , Stripe AZ 400K pur , Stripe AZ 400K pur , Striper KOH purge , 10, DI water+co2 top+bottom , 10, DI water+co2 top+bottom , BS neutralize Drying Finish 25 Tot: Last mod slow down 150 >90 for better wetting

15 ProgramNo 13 Process LOW SPEED E/S (Equiv. 120s. Coillard wetbench) Step Step time Ramp Speed Tol. Speed OutP WasteUnit fkt Pos V Comment Chemistry , 15, Cr etch purge Wait for valves , Cr etch (delayed) , Cr etch (effective) , 9, 10, CR etch purge, BS Neutralize , 8, 9, 10, Cr etch purge, BS Rinse, Chamber rinse , BS Neutralize , Striper KOH 30% , Striper KOH30%, BS Neutralize , Striper KOH purge , 10, DI water+co2 top+bottom , 10, DI water+co2 top+bottom , BS neutralize Drying Finish 18 Tot: Last mod. IMPORTANT Take care to limit acc/decc below 150 rpm/s

16 ProgramNo 16 Process LOW SPEED D90S Step Step time Ramp Speed Tol. Speed OutP WasteUnit fkt Pos V CommChemistry , Develop purge , Develop , DeveloDev AZ 351: DI 1:4 > update to 1: , Develop , 9, Developer purge, BS Neutralize , 8, 9, Developer purge, BS Rinse, Chamber rinse , 10, BS Neutralize Dry Tot: 311 Last mod slow down 150 >90 for better wetting IMPORTANT Take care to limit acc/decc below 150 rpm/s