Highly Efficient Polymer-Based Optoelectronics Devices Using. PEDOT:PSS and a GO Composite Layer as a Hole Transport Layer

Transcription

1 Supporting Information. Highly Efficient Polymer-Based Optoelectronics Devices Using PEDOT:PSS and a GO Composite Layer as a Hole Transport Layer Jae Choul Yu,,, Jeong In Jang, Bo Ram Lee,,, Geon-Woong Lee, Joong Tark Han,,* and Myoung Hoon Song,,,* School of Advanced Materials Engineering, KIST-UNIST Ulsan center for Convergent Materials Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan , Republic of Korea Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI) 12, Bulmosan-ro 10beon-gil, Changwon, , Republic of Korea. * Corresponding authors, mhsong@unist.ac.kr, jthan@keri.re.kr

2 Figure S1. Photo imaged of (a) graphite oxide foam after freeze-drying, (b) AFM image of GO nanosheet on Si wafer, (c) height profiles along the lines indicated and (d) GO dispersion in water. (e) FT-IR and (f) XPS spectrum of GO nanosheets.

3 Figure S2. (a) Raman spectra of the PEDOT:PSS and of well dispersed PEDOT:GO composite layers. (b) The chemical structure of benzoid-quinoid transition.

4 Figure S3. PLEDs light-emitting characterization (a) current density vs applied voltage (J- V), (b) luminance vs the applied voltage (L-V), (c) luminous efficiency vs the applied voltage (LE-V), (d) power efficiency vs the applied voltage (PE-V), (e) external quantum efficiency vs the applied voltage (EQE-V) curves of PEDOT:PSS for different volume ratio of GO (ph3) content as hole transport layer, and (f) electroluminescence (EL) spectra of PLEDs.

5 Figure S4. PLEDs light-emitting characterization (a) current density vs applied voltage (J- V), (b) luminance vs the applied voltage (L-V), (c) luminous efficiency vs the applied voltage (LE-V), (d) power efficiency vs the applied voltage (PE-V), (e) external quantum efficiency vs the applied voltage (EQE-V) curves of PEDOT:PSS for different volume ratio of C-GO (ph9) content as hole transport layer, and (f) electroluminescence (EL) spectra of PLEDs.

6 Figure S5. J-V characteristic of PSCs with the well-dispersed PEDOT:GO composite, the aggregated PEDOT:GO composite and the PEDOT:PSS hole transport layers as HTL in the dark.

7 Figure S6. The log J vs. log V characteristics of hole only devices with the PEDOT:PSS and of the well-dispersed PEDOT:GO composite layers were fitted with the Mott-Gurney SCLC model ( ).

8 Table S1. Summarized the conductivities of the PEDOT:PSS and the well-dispersed PEDOT:GO composite films on bare glass. Device Configuration Conductivity (S/cm) Glass/PEDOT:PSS Glass/PEDOT:C-GO (ph9) 0.013

9 Table S2. Summarized device performances of PLEDs with PEDOT:PSS and PEDOT:GO (ph3) at different concentrations. Devices configuration L max [cd/m 2 ] LE max [cd/a] PE max [lm/w] EQE max [%] Turn-on Voltage [V] ITO / PEDOT:PSS/ SY / LiF / Al (11.8V) (6.6V) 6.33 (4.0V) 3.88 (6.6V) 2.2 ITO / PEDOT:GO(1:0.005)/ SY / LiF / Al (11.6V) (7.0V) 6.57 (4.2V) 4.06 (7.0V) 2.2 ITO / PEDOT:GO(1:0.01)/ SY / LiF / Al (11.8V) (7.0V) 6.96 (4.0V) 4.28 (7.0V) 2.2 ITO / PEDOT:GO(1:0.05)/ SY / LiF / Al (11.6V) (6.8V) 7.96 (4.0V) 4.69 (6.8V) 2.2 ITO / PEDOT:GO(1:0.1)/ SY / LiF / Al (11.2V) (6.4V) 9.29 (3.6V) 4.88 (6.4V) 2.2 ITO / PEDOT:GO(1:0.5)/ SY / LiF / Al (11.2V) (6.4V) (3.4V) 5.06 (6.4V) 2.2 ITO / PEDOT:GO(1:1)/ SY / LiF / Al (11.8V) (6.8V) 8.16 (3.8V) 4.81 (6.8V) 2.2 ITO / PEDOT:GO(1:2)/ SY / LiF / Al (11.2V) (6.4V) 7.32 (3.8V) 4.08 (6.4V) 2.2

10 Table S3. Summarized device performances of PLEDs with PEDOT:PSS and PEDOT:C-GO (ph9) at different concentrations. Devices configuration L max [cd/m 2 ] LE max [cd/a] PE max [lm/w] EQE max [%] Turn-on Voltage [V] ITO / PEDOT:PSS/ SY / LiF / Al (12.0V) (7.2V) 6.27 (4.2V) 4.41 (7.2V) 2.2 ITO / PEDOT:PSS:C-GO(1:0.01)/ SY / LiF / Al ITO / PEDOT:PSS:C-GO(1:0.05)/ SY / LiF / Al ITO / PEDOT:PSS:C-GO(1:0.1)/ SY / LiF / Al ITO / PEDOT:PSS:C-GO(1:0.5)/ SY / LiF / Al (12.4V) (7.0V) 7.41 (4.0V) 4.70 (7.0V) (12.4V) (7.0V) 7.79 (4.4V) 5.38 (7.0V) (12.0V) (7.0V) (4.0V) 5.97 (7.0V) (12.2V) (7.0V) (4.0V) 6.63 (7.0V) 2.2 ITO / PEDOT:PSS:C-GO(1:1)/ SY / LiF / Al (12.8V) (6.8V) 8.60 (4.0V) 5.38 (6.8V) 2.2 ITO / PEDOT:PSS:C-GO(1:2)/ SY / LiF / Al (12.2V) (7.4V) 7.67 (4.0V) 4.74 (7.4V) 2.2

11 Table S4. The hole mobility of different device configuration and the parameters necessary for Mott-Gurney SCLC model fitting. Device Configuration Hole mobility (cm 2 /Vs) ITO/PEDOT:PSS/SY/MoO 3 /Au X 10-7 ITO/PEDOT:C-GO (ph9)/sy/moo 3 /Au X 10-6