KOREA UNIVERSITY. 5. I D -V D Relationship
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1 KOREA UERSTY 5. - Reltioshi 1 Betwee oit A d B, it is the ohmic regio of the JFET. t is the regio where the voltge d curret reltioshi follows ohm's lw. At oit B, the dri curret is t mximum for S = coditio d is defied s SS. t is the ich-off oit, where there is o icrese of curret s dri-to-source voltge S is further icresed. B C A 19 Photoics bortory
2 KOREA UERSTY The S voltge t this oit is clled ich-off voltge P. t is lso the voltge oit where dri-to-gte voltge roduces eough deletio thickess to rrow the chel so tht the resistce of the chel will icrese sigifictly. Sice S =, S is lso equl to. Thus, i geerl the ich-off voltge is = SP S 1 where SP is the ich-off dri-to-source voltge for S vlue. 4 SS d P re costt vlues listed by the mufcturer for give JFET tye, which re the dri curret d ich-off voltge t gte-to-source voltge S =. 5 At oit C, the JFET begis to brekdow where the icreses ridly d it is irreversible brekdow. B C A Photoics bortory
3 KOREA UERSTY ifferet vlue of S roduces differet dri chrcteristic curve. 1 For chel JFET, s S decreses, curret d SP decreses. There is S vlue tht o dri curret is registered irresective of the drisource voltge S. This gte-to-source voltge S is the cutoff gte-to-source voltge Soff. Sice there is o curret, S must be zero. Thus, from equtio 1 S = - P. Equtio 1 c lso ow be writte s SP = S Soff. ri chrcteristics of -chel JFET of differet S 1 Photoics bortory
4 KOREA UERSTY 1 At ohmic regio of the dri chrcteristic curve for -chel tye follows equtio, which is W =Aq μ S where A is the effective cross sectiol re of the chel for give S voltge d b is the effective chel width for give gte-to-source voltge d zero dri curret. At gte-to-source voltge equls to zero volt i.e. S = volt, the effective chel width b is equl to h. Thus, the chel o-resistce is defied s 1 W r So =. hq μ At ich-off regio = SS 1 SP b P At cutoff regio where the curret is equl to zero. Coditio for cutoff of -chel JFET Photoics bortory
5 KOREA UERSTY Photoics bortory The curret i -FET due to smll voltge S tht is, i the lier ohmic regio is give by tretig the chel s rectgulr br of mteril of electricl coductivity q d μ. ier regio The the dri curret i the lier regio c be exressed s: terms of SS, the dri curret c lso be: Sturtio regio The dri curret i the sturtio regio is ofte roximted i terms of gte s s: Where SS is the sturtio curret t zero gte source voltge, i.e. the mximum curret which c flow through the FET from dri to source t y ermissible dri-to-source voltge see, e. g., the - chrcteristics digrm bove.
6 KOREA UERSTY Exmle 1. For the JFET circuit show i the figure, P = 8. d SS = 1.mA. etermie the vlue of S whe ich-off begis. b f the gte is grouded, wht is the vlue of for =1. whe S is bove ich-off? 5 S 1 From the circuit, S = -5 d ly equtio 1, SP = P + S = = The S voltge whe ich-off occurred is.. Whe the gte is grouded, S =, the dri curret is equl to SS =1mA. For y vlue of dri-to-source voltge S bove ich-off voltge of 8, the dri curret remis s SS = 1.mA. This is true s log s the dri-to-source voltge S is below brekdow voltge. 4 Photoics bortory
7 KOREA UERSTY 5 Photoics bortory
8 KOREA UERSTY Trsfer Chrcteristics. The trsfer chrcteristic of -chel JFET is show i Fig At gte-to-source voltge S =, the dri curret is equl to SS d t gte-to-source voltge Soff, dri curret =. At At S S where, SP Soff, st, P 1mA Soff. The curve is rbolic curve, which c be exressed mthemticlly s = SS 1 S Soff 6 Photoics bortory
9 KOREA UERSTY 6. - Clcultio 6. - Clcultio 7 Photoics bortory
10 KOREA UERSTY 6. - Clcultio For dri d gte voltges below ich - off, J Withi the coductiog chel Sice the diffusio comoet of the curret is reltivly smll, J q Asi the K sε K sε W A q q f, whe d, W, K sε q dy - ste juctio,, q E q st E J y q dxdz Z W 1 d, P d dy W y W y 1,15.7 J dx Z W y d the curret is flowig lmost exclusivel y i the y - directio. W y d dy q dy 1 d dy dx A W d y d dy W y 8 Photoics bortory
11 KOREA UERSTY Photoics bortory, whe W imlies the chel t the dri ed of oig tht ich - off.,, Assumig tht.. d, st st,, st b d st st st st st , , st st s d q ε K,15.7,15.6,15.5, s s A s q ε K q ε K q ε K W d W Clcultio
12 KOREA UERSTY Photoics bortory. where , st P st st b 6. - Clcultio
13 KOREA UERSTY 1 Photoics bortory
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