arxiv: v1 [cond-mat.mtrl-sci] 25 Jun 2014

Transcription

1 Analytcal soluton of dffuson quaton for pont dfcts O. I. Vlchko arxv: v1 [cond-mat.mtrl-sc] 5 Jun 014 E-mal addrss (Olg Vlchko: vlchkomal@gmal.com Abstract. Th analytcal soluton of th quaton dscrbng dffuson of ntrnsc pont dfcts has bn obtand for a on-dmnsonal fnt-lngth doman. Ths soluton s ntndd for nvstgatng and modlng th changs n dfct dstrbutons durng fabrcaton of smconductor dvcs wth layr-typ structurs. Wth ths purpos, th Robn-typ boundary condtons wr mposd on both dgs of th doman. Usng th soluton obtand, th calculatons of dstrbutons of pont dfcts for dffrnt boundary condtons and dffrnt dfct mgraton lngths hav bn carrd out. For th cas of gnraton of nonqulbrum pont dfcts du to mplantaton of hydrogn ons, th nflunc of th surfac on th concntraton and spatal dstrbuton of nonqulbrum pont dfcts was nvstgatd dpndng upon th mplantaton nrgy. Kywords: slcon; mplantaton; annalng; dffuson; modlng 1 Introducton Th lctrophyscal paramtrs of slcon ntgratd mcrocrcuts and othr smconductor dvcs ar dtrmnd by th stat of a dfct-mpurty systm of dopd rgons. Now, submcron rgons of smconductor dvcs ar formd by mans of ons mplantaton wth th subsqunt low-budgt thrmal annalng. Durng annalng, th man fracton of th nonqulbrum dfcts gnratd by on mplantaton s lmnatd. Bcaus hydrogn atoms radly passvat danglng bonds, ntroducton of hydrogn nto slcon substrats can b usd for furthr mprovmnts n th dvc prformanc du to dcrasng th mprfctons of th crystalln lattc and lmnatng undsrabl lctronc stats from th band gap [1]. Introducton of hydrogn can b carrd out by mans of slcon tratmnt n a hydrogn contanng-plasma [1, ] or du to mplantaton of hydrogn ons. In both cass ntroducton of hydrogn ons s accompand by gnraton of addtonal dfcts n th nar surfac rgon. Du to th smallnss of hydrogn atoms, t s found that sngl pont dfcts, namly, vacancs and slf-ntrsttals, wll b gnratd n undopd slcon. On th othr hand, aftr mplantaton of a hgh flunc of hydrogn ons, du to dffuson and quaschmcal ractons of gnratd pont dfcts among thmslvs, wth hydrogn atoms and othr mprfctons of crystalln lattc, th thn havly damagd layr,.., a qut dp waknd zon, can b formd n th bulk of a smconductor. As a rsult, th actv layr wth SO solaton can b sparatd from th rst of th bulk substrat du to splttng whch taks plac nsd th waknd zon. In such a way dffrnt structurs calld slcon-on-nsulator (SOI ar formd [3] whch hav a numbr of advantags n comparson wth th lctrc solaton fabrcatd by th tradtonal tchnology. It s worth notng that nonqulbrum pont dfcts can b mobl vn at room tmpratur. Indd, accordng to th tmpratur dpndnc obtand n th papr 1

2 [4], th dffusvty of slcon slf-ntrsttals atoms d I = 1.06 µm /s for a tmpratur of 300 K. On th othr hand, t follows from th data of [5] that ths dffusvty s qual to µm /s. Th charactrstc dffuson lngth of slcon slf-ntrsttals L I = d I t obtandforths valusofdffusvty varsfrom3.6µmto566µmforthtmduraton t = 10 s. It mans that vn at room tmpratur slcon slf-ntrsttals dffus asly far away from th boundars of actv rgons. Thus, dstrbutons of nonqulbrum pont dfcts n fabrcatd smconductor dvcs ar dtrmnd not only by thr gnraton n th local domans, but also by dfct rdstrbuton du to dffuson. For calculaton of dstrbutons of pont dfcts n th papr by Mnar t al. [6] th analytcal soluton of th quaton d d C D dx CD τ +G R (x = 0 (1 dscrbng dffuson of pont dfcts was obtand on th smnfnt ntrval [0,+ ]. Th cas of th constant coffcnts d and τ was consdrd. Hr C D = C D (x s th concntraton of pont dfcts; d and τ ar th dffusvty and th avrag lftm of pont dfcts n an ntrnsc smconductor, rspctvly. It was supposd n [6] that nonqulbrum pont dfcts wr contnuously gnratd durng on mplantaton of mpurty atoms and dffusd to th surfac and nto th bulk of a smconductor. Th surfac was consdrd to b a prfct snk for pont dfcts. Th concntraton of nonqulbrum dfcts was also st qual to zro at nfnty. It was supposd that th gnraton of nonqulbrum pont dfcts s dtrmnd by two factors, namly, gnraton du to th prmary Ruthrford scattrng and scondary cascads and gnraton by hard-sphr ntracton at or nar th nd of on s track. Thn, th total gnraton rat of pont dfcts n th volum unt can b approxmatd by an xprsson wth two summands: G R (x = G Ruth m ( rfc x R [ ] p +G R R mxp (x R p, ( p Rp whr G Ruth m and G R m ar th maxmal valus of pont dfct gnraton rats; R p and R p ar th avrag projctv rang of mplantd ons and stragglng of th projctv rang, rspctvly. A smlar soluton was obtand n [7] for th Robn boundary condton on th surfac of a smconductor: d dc D dx +v S C D (0 = 0, (3 x=0 whr v S s th paramtr dscrbng th vlocty of pont dfct trappng on th surfac of a smconductor. Only th scond trm n th rght-hand sd of xprsson ( s usd for th gnraton rat of nonqulbrum dfcts. At prsnt, n th modrn slcon tchnology, dffrnt layrd structurs such as S 1 x G x /S [8, 9, 10] and slcon-on-nsulator [3] ar wdly usd. Thrfor, t s rasonabl to obtan an analytcal soluton of th quaton for dffuson of ntrnsc pont dfcts n a fnt-lngth doman [0,x B ]. Th soluton obtand can b hlpful for studyng th

3 form of pont dfct dstrbutons undr charactrstc condtons usd n procssng smconductor substrats and for vrfcaton of numrcal solutons. Ths soluton can b also appld for modlng a numbr of th procsss of dffuson of vacancs and slcon slf-ntrsttal bcaus th paramtrs dscrbng th transport procsss of pont dfcts n slcon and known from th ltratur dffr by many ordrs of magntud [11]. Th boundary valu-problm for dfct dffuson Th dffuson quatons for vacancs and slcon slf-ntrsttals that tak nto account dffrnt charg stats of ntrnsc pont dfcts and drft of th chargd spcs n th bult-n lctrc fld wr obtand n [1, 13]. Ths quatons hav th followng form: 1 quaton of vacancy dffuson ] [ [d V (χ C V (ω χ d V (χ 1 (C C B ( C CB CV ]+ SE G E Cq V k AIkV (χ C AIk CV k IV (χ C I q C I CV SV C V q + GVT +G VR C V q = 0, (4 quaton for dffuson of slcon slf-ntrsttal ] [ [d I (χ C I (ω χ d I (χ 1 (C C B ( C CB CI ]+ SF G F Cq I k W (χ C I + kaik Cq I C AIk k IV (χ C V q C V CI SI C I q + GIT +G IR C I q = 0, (5 whr ω χ = χ µ χ k B T χ. (6 Hr C V and C I ar rspctvly th concntratons of nonqulbrum vacancs and slcon slf-ntrsttals n th nutral charg stat, normalzd to th qulbrum V I concntratons of ths spcs C q and C q ; C and C B ar th concntratons of substtutonally dssolvd mpurty and mpurty wth th oppost-typ of conductvty, rspctvly; C AIk s th concntraton of mpurty ntrsttals wth th charg stat k; χ s th concntraton of charg carrrs (lctrons n or hols p for dopng wth donor or accptor mpurts, rspctvly normalzd to th ntrnsc concntraton of charg carrrs n ; ω χ s th functon whch dscrbs a dvaton of an lctron (hol systm byond th prfct solublty; µ χ s th chmcal potntal of lctrons (hols; d V (χ s th ffctv dffusvty of vacancs; k AIkV and k IV ar rspctvly th ffctv rcombnaton coffcnts of mpurty ntrsttals (n a charg stat k and slcon slf-ntrsttals wth vacancs; G E and S E ar th rats of gnraton and dssoluton of th mpurty atom vacancy pars; S V s th rat of th trappng of th vacancs on th mmobl 3

4 mprfctons of a crystalln lattc; G VT and G VR ar th rats of thrmal gnraton of vacancs and gnraton of th vacancs du to xtrnal rradaton; d I (χ s th ffctv dffusvty of slcon slf-ntrsttals; k W s th ffctv coffcnt of th rplacmnt of th mpurty atom by slf-ntrsttal from th substtutonal poston nto th ntrsttal on (Watkns ffct [14]; k AIk s th ffctv coffcnt for convrson of mpurty atoms from an ntrsttal to th substtutonal poston (phnomnon oppost to th Watkns ffct; G F and S F ar th rats of gnraton and dssoluton of th mpurty atom slcon slf-ntrsttal pars; S I s th rat of th trappng of th slcon slf-ntrsttals on th mmobl snks of a crystalln lattc; G IT and G IR ar th rats of a thrmal gnraton of slcon slf-ntrsttals and thr gnraton du to xtrnal rradaton. Th dffuson quatons obtand hav th followng charactrstc faturs: ( ths two quatons dscrb dffuson of all pont dfcts wth dffrnt charg stats as a whol, although only th concntraton of th nutral vacancs C V and slcon slf-ntrsttals C I must b drvd to solv quatons (4 and (5, rspctvly. Aftr th soluton, th dstrbutons of chargd spcs, namly, vacancs n a charg stat r and slcon slf-ntrsttals n a charg stat q, can b calculatd from th xprssons dscrbng th local thrmodynamc qulbrum C Vr = C V C V q h Vr χ zzv r and C Iq = C I C I q hiq χ zziq. Hr z, z V r, and z Ir ar rspctvly th charg of a substtutonal mpurty atom, th charg of a vacancy n th charg stat r, and th charg of a slcon slf-ntrsttal n th charg stat q n trms of th lmntary charg; h Vr and h Iq ar th constants of th mass acton law for ractons of dfcts convrson from nutral to nonzro charg stats; ( th quatons obtand tak nto account th drft of all chargd spcs du to th bult-n lctrc fld. At th sam tm, thr s no xplct trm that would dscrb th drft and b proportonal to th frst drvatv of th concntraton of mobl spcs that ssntally complcats th numrcal soluton. To xclud ths trm, a systm of quatons dscrbng dffuson of ntrnsc pont dfcts n ach charg stat was wrttn. Thn, th spcal mathmatcal transformatons of ths quatons wr prformd usng th mass acton law for convrsons btwn dffrnt charg stats of vacancs and slf-ntrsttals. As a rsult of ths transformatons, th drft of vacancs and slcon slf-ntrsttals n th lctrc fld ar takn nto account n th ffctv dffuson coffcnts d V (χ and d I (χ; ( th ffctv dffuson coffcnts d V (χ and d I (χ as wll as th ffctv coffcnts of quaschmcal ractons k W (χ, k AIkV (χ, and k IV (χ ar smooth and monoton functons of th concntraton of dopant atoms. It s to b notd that quatons (4 and (5 ar vry convnnt for numrcal soluton and studyng th fundamntals of dffuson procsss owng to th faturs (, (, and (. In addton, t follows from ths quatons that for dfct dffuson n ntrnsc or homognously dopd smconductor all nonlnar coffcnts ar convrtd nto constants. Thn, quatons (4 and (5 can b prsntd for a on-dmnsonal (1D doman n th form d C d C dx τ + GT +G R C q = 0, (7 whr d and τ ar th dffusvty and th avrag lftm of pont dfcts n ntrnsc 4

5 slcon (w do not concrtz th dfct spcs. In a numbr of cass concrnng th mpurty and pont dfct dffuson, t s possbl to nglct th mutual ntractons of vacancs and ntrsttal atoms. For xampl, undr a low-tmpratur oxdaton of th surfac of a smconductor, slcon slf-ntrsttals ar th domnatng dfcts n a slcon crystal [15]. Thrfor, on can nglct calculaton of vacancy dstrbuton n modlng th procsss of mpurty dffuson du to nglgbl vacancy concntraton. In ths cas, th avrag lftm of othr dfcts (slcon slfntrsttals can b assumd to b constant τ = τ = const. Hr τ s th avrag lftm of dfcts n an ntrnsc smconductor undr qulbrum condtons. Usng th quantty of th avrag mgraton lngth of pont dfcts l = d τ, on can prsnt th quaton of dffuson (7 n th followng form: d C dx 1 l C + 1+ g(x,t l = 0, (8 whr g(x,t = G R /G T rprsnts thgnratonratofpontdfctsundrconsdraton n th volum unt of a smconductor normalzd to th thrmal gnraton rat of ths dfcts. Lt us obtan a soluton of quaton (8 n th 1D fnt-lngth doman [0,x B ] for g(x,t = g(x and th Robn boundary condtons on th lft and rght boundars: w1 S d d C +w S dx C (0 = w3 S, (9 x = 0 w B 1 d d C dx +w B C (x B = w3 B, (10 x = xb whr w1 S, ws, ws 3, wb 1, wb, and wb 3 typ of ral boundary condtons. ar th constant coffcnts spcfyng th concrt 3 Soluton of th quaton dscrbng dfct dffuson For th soluton of th boundary-valu problm (8, (9, and (10 w can us th Grn functon approach [16]: C (x,t = whr th standardzng functon ω(ξ has th followng form: x B 0 G(x,ξω(ξdξ, (11 1+ g(x,t ω(ξ = +ω l S (ξ+ω B (ξ (1 and G(x, ξ s th Grn s functon for quaton (8. Usng th standardzng functon ω(ξ [16] allows on to rduc th prvous boundary-valu problm to th boundaryvalu problm wth boundary condtons havng zro rght hand sds: 5

6 w1 S d d C +w S dx C (0 = 0, (13 x = 0 w1 B d d C +w B dx C (x B = 0. (14 x = xb Th Grn functon for quaton (15 wth boundary condtons (13 and (14 has th followng form [16]: whr G(x,ξ = 1 K { Q1 (x Q (ξ 0 x ξ x B Q 1 (ξ Q (x 0 ξ x x B, (15 K = [Q 1 (xq (x Q (xq 1 (x] = const. (16 Hr Q 1 (x and Q (x ar th lnarly ndpndnt solutons of th homognous quaton d C 1 C = 0. (17 dx l wth th followng condtons on th lft boundary: and on th rght on: Q 1 (0 = w S 1d, Q 1(0 = w S (18 Q (x B = w B 1 d, Q (x B = w B. (19 Takng nto account [16], w can wrt th functons ω S (x and ω B (x as ω S (x = ω B (x = 1 δ( xw w1d S 3 S, ws w S δ ( xw S 3, w S 0 1 w B 1 d AIδ(x B xw B 3, wb w B, (0 δ (x B xw B 3, wb 0. (1 Lt us consdr th followng Robn boundary condton on th lft boundary of th layr (for xampl, on th surfac x = 0 and n th bulk of a smconductor x = x B : w S 1 = 1, ws 0, ws 3 = 0, ( w B 1 = 1, w B 0, w B 3 = 0. (3 Ths boundary condtons ar vry ntrstng for tchnology bcaus thy allow on to dscrb th flux of pont dfcts through th lft and th rght boundars as wll as 6

7 thabsorptonofdfcts onthboundary[7]. Itfollows from(and(3 thatω S (x = 0 and ω B (x = 0, whras th solutons Q 1 and Q hav th followng form: Q 1 (x = 1 [ (d +l w S x l + ( ] d l w S x l, (4 Q (x = 1 [ (d l w B x B x l + ( ] d +l w B x B x l. (5 Thn, th constant K s qual to K = 1 [ (d ( l w B d +l w S x B l l ( ( ] d +l w B d l w S x B l. (6 and th Grn functon has th followng form: G(x,ξ = l [(d l w B (d +l w S B l (d x +l w B (d l w S B x [ (d +l w S x l + ( ] d l w S x l (d [ l w B x B ξ l + ( ] d +l w B x B ξ l [ (d +l w S ξ l + ( ] d l w S ξ l (d [ l w B x B x l + ( ] d +l w B x B x l 0 x ξ x B, 0 ξ x x B. l ] (7 Lt us assum that a gnraton of nonqulbrum pont dfcts occurs du to on mplantaton and that th dstrbuton of thr gnraton rat s approxmatd by th Gaussan functon: g(x,t = g m xp [ (x R pd R pd ], (8 whr g m s th maxmum rat of gnraton of nonqulbrum dfcts normalzd to th rat of th thrmal gnraton of ths spcs; R pd s th poston of th gnraton maxmum and R pd s th standard dvaton. Substtutng th Grn functon (7 and xprsson(8 nto (11 allows on to obtan a spatal dstrbuton of pont dfct concntraton: C (x = C q (x+ C R (x, (9 whr C q (x s th dstrbuton of pont dfct concntraton n th cas of zro xtrnal radaton and C R (x s th chang of dfct concntraton du to on mplantaton: 7

8 C q (x = ( ( ( ( d l w S d +l w B d +l w S d l w B + ( d +l w B l w S ( x B x d +l w S l w B l l x B l + ( x B d l w B l w S l ( x B x d l w S l w B l l (30 and whr [( d l w S ( d +l w B ( d +l w S ] 1 C R (x = C R1 (x+ C R (x, (31 π C R1 (x = g m ( d l w B R pd l R pd l R pd +l x B l x B x l + ( d +l w B x B x l ( d +l w S R pd ( R ( l pd +l R pd l x R ] [rf pd +l R pd rf Rpd l Rpd l (3 + ( d l w S [ rf ( R ( pd l R pd R ]} pd l R pd +l x rf Rpd l Rpd l ( ( ( ( d l w S d +l w B d +l w S d l w B x B l 1, 8

9 π C R (x = g m ( d +l w B + ( d l w B R pd l Rpd l R pd l x l d l w S + ( d +l w S x l R pd ( R ( l pd +l R pd l x B R ] [rf pd +l R pd l x rf Rpd l Rpd l x B ( R ( l pd l R pd +l x R ] [rf pd l R pd +l x B rf Rpd l Rpd l ( ( ( ( d l w S d +l w B d +l w S d l w B x B l (33 It was mntond abov that n th up-to-dat lctroncs dffrnt layrd structurs such as G x S 1 x /S or slcon-on-nsulator (SOI ar oftn usd for dcrasng th dvc dmnsons and mprovng th dvc prformanc. Th drvd analytcal soluton for a fnt-lngth doman [0,x B ] s convnnt for modlng and nvstgatng pont dfct dffuson n a sparat layr of ths structurs. For xampl, n Fg. 1 th calculatd dstrbuton of pont dfcts n th slcon layr of thcknss 0.4 µm s prsntd. Prmarly, th cas of zro xtrnal radaton (g m = 0 s consdrd for th bttr undrstandng of th nflunc of on mplantaton. 1. Normalzd dfct concntraton (a. u concntraton of pont dfcts Dpth ( m Fgur 1: Calculatd concntraton dstrbuton of th nutral pont dfcts n a slcon layr of thcknss 0.4 µm. Th dottd curv rprsnts th thrmally qulbrum valu of th normalzd concntraton of nutral pont dfcts It s vdnt that for zro fluxs of dfcts through th boundars of th layr a dstrbuton of pont dfcts s homognous and th valu of normalzd concntraton of ths dfcts s qual to 1 (dottd curv. Dvaton from th unform dfct dstrbuton 9

10 occurs only f thr ar nonzro fluxs of dfcts through th boundars or thr s an absorpton (gnraton of pont dfcts on th surfac or at th ntrfac. For xampl, th dstrbuton of dfcts prsntd n Fg. 1 s calculatd undr th assumpton that two fluxs of pont dfcts through th lft and rght boundars ar drctd along th x axs. Wth ths purpos th coffcnts w S and wb hav bn prsntd n th followng form: w S = vs ff, w B = vb ff, (34 whr vff S and vb ff ar th ffctv rat of pont dfct rmoval outsd th layr through th lft and rght boundars, rspctvly. For dfct dstrbuton prsntd n Fg. 1, th valus vff S = µm/s and vb ff = 4.0 µm/s wr usd. Also, th valu of th avrag mgraton lngth of pont dfcts l = 0.1 µm and th valu of ntrnsc dffusvty d = 0.01 µm /s wr chosn. It can b sn from Fg. 1 that accordng to th boundary condtons (34 usd for solvng quaton (8 th concntraton of th pont dfcts n th vcnty of th lft boundary ncrass du to supplyng addtonal dfcts n th layr, whras nar to th rght boundary th concntraton of ntrnsc pont dfcts dcrass du to th rmoval of ths spcs outsd th layr. Th analytcal soluton obtand dscrbs th dstrbuton of th concntraton of pont dfcts n th nutral charg stat. Th concntraton of th chargd dfct spcs C r (x can b calculatd from th abovmntond xprssons C Vr = C V C V q hvr χ zzv r and C Iq = C I C I q hiq χ zziq that follow from th mass acton law. It s worth notng that du to th quas-statonarty of th dffuson quaton for pont dfcts, xactly th sam soluton taks plac for th Drchlt boundary condtons wth C (0 = C S = a.u. and C (x B = C B = a.u. Hr C S and C B ar th normalzd concntratons of ntrnsc pont dfcts on th lft (surfac and rght boundars of th layr. Lt us consdr now th man faturs of th solutons of quaton (8 n th cas of ntns gnraton of nonqulbrum pont dfcts n th vcnty of th surfac. Such gnraton can occur durng low-nrgy mplantaton of hydrogn ons nto smconductor substrat. For xampl, lt us suppos that th nrgy of hydrogn mplantaton s kv. Thn, calculaton prformd by th cod SRIM [17] gvs th followng valus: R pd = µm, R pd = µm, f on assums that th dstrbuton of gnratd dfcts s proportonal to th dstrbuton of mplantd hydrogn ons. In Fg. th calculatd concntraton dstrbuton of nonqulbrum pont dfcts n th slcon layr of thcknss 0.4 µm s prsntd. It was supposd that th maxmal gnraton rat of pont dfcts du to th on mplantaton xcds 1000 tms th rat of thrmal gnraton (g m =1000, whras th dffuson paramtrs ar th sam (l = 0.1 µm, d = 0.01 µm /s. For comparson, th pont dfct dstrbuton calculatd for th valu l = 0. µm s also prsntd. Th cas of zro fluxs through th lft and rght boundars s nvstgatd prmarly. It follows from Fg. that th pont dfct concntraton dcrass 1.6 tms at th surfac of a smconductor f th avrag mgraton lngth ncrass tms. Smultanously, th dstrbuton of pont dfcts bcoms flattr. On th othr hand, thr s a sgnfcant ncras of th pont dfct concntraton, mor accuratly by a factor of 3.4, on th rght boundary of th layr. 10

11 Normalzd dfct concntraton (a. u l =0.1 m l =0. m Dpth ( m Gnraton rat of dfcts (a. u. Fgur : Concntraton dstrbuton of th nutral pont dfcts normalzd to th thrmally qulbrum valu of dfct concntraton n a slcon layr of thcknss 0.4 µm for th cas of hydrogn mplantaton wth an nrgy of kv. Th dashd ln rprsnts th gnraton rat of pont dfcts normalzd to th qulbrum on Normalzd dfct concntraton (a. u zro dfct flux through th surfac trappng of dfcts at th surfac Dpth ( m Fgur 3: Concntraton dstrbuton of th nutral pont dfcts normalzd to th thrmally qulbrum valu of dfct concntraton n a slcon layr of thcknss 0.4 µm for th cas of hydrogn mplantaton wth an nrgy of kv. Th sold ln rprsnts dstrbuton of pont dfcts calculatd for th cas of zro dfct flux through th lft boundary, whras th dottd ln dscrbs dffuson of pont dfcts undr condtons of dfct trappng on th surfac Now, ths papr nvstgats th man faturs of th soluton obtand for th cas of dfct rmoval through th lft boundary of th layr. It was mntond abov that ths boundary condton s also smlar to dfct trappng on th surfac of a smconductor. Wth ths purpos Fg. 3 prsnts two dstrbutons of dfcts whch wr calculatd for thcasof zro dfct flux throughthlft boundaryandforthcas ofntnsv trappng 11

12 of dfcts by th surfac, rspctvly. It s supposd that th avrag mgraton lngth of pont dfcts s qual to 0.1 µ m. It can b sn from Fg. 3 that th trappng of pont dfcts on th surfac rsults n th chang of th form of ts concntraton profl and n th sgnfcant dcras of dfct concntraton. For xampl, th maxmal concntraton of pont dfcts dcrass 3.5 tms. Normalzd dfct concntraton (a. u zro dfct flux through th surfac trappng of dfcts at th surfac Dpth ( m Fgur 4: Concntraton dstrbuton of th nutral pont dfcts normalzd to th thrmally qulbrum valu of dfct concntraton n a slcon layr of thcknss 0.4 µm for th cas of hydrogn mplantaton wth an nrgy of 500 V. Th sold ln rprsnts dstrbuton of pont dfcts calculatd for th cas of zro dfct flux through th lft boundary, whras th dottd ln dscrbs dffuson of pont dfcts undr condtons of dfct trappng on th surfac Mor srous nflunc of th surfac on th dstrbuton of pont dfcts can b obsrvd for small valus of mplantaton nrgy. It can b sn from Fg. 4, whr a smlar calculaton for th nrgy of mplantaton of hydrogn ons quals to 500 V s prsntd. For ths valu of hydrogn mplantaton nrgy th calculaton of th paramtrs dscrbng th dstrbuton of mplantd ons gvs th followng valus: R pd = µm, R pd = µm [17]. It can b sn from Fg. 4 that th maxmal concntraton of pont dfcts dcrass 8.8 tms du to th trappng of pont dfcts on th surfac, whch s n clos vcnty (a fw nanomtrs to th rgon of ntns gnraton of nonqulbrum pont dfcts. 1

13 4 Conclusons Th analytcal soluton of th on-dmnsonal quaton that dscrbs quas-statonary dffuson of ntrnsc pont dfcts n smconductor crystals has bn obtand for th cas of th Robn boundary condtons on th lft and rght boundars of th layr. It s supposd that th gnraton rat of nonqulbrum pont dfcts s approxmatd by th Gaussan functon. To drv an analytcal soluton of ths boundary-valu problm, th Grn functon approach has bn usd. Th soluton obtand s focusd on th applcaton n modlng tchnologcal procsss usd for fabrcaton of modrn slcon ntgratd mcrocrcuts and othr smconductor dvcs whch hav layrd structur. For xampl, t can b hlpful for vrfcaton of th numrcal solutons obtand and for nvstgaton of th faturs of transport procsss of vacancs and slcon slf-ntrsttal atoms dpndng upon th mplantaton paramtrs and paramtrs of boundary condtons. It follows from a larg uncrtanty of dffusvty and othr transport proprts of pont dfcts known from th ltratur that th analytcal soluton obtand can succssfully rplac th numrcal soluton n modlng a numbr of tchnologcal procsss usd n th modrn mcrolctroncs. To llustrat th usfulnss of th obtand soluton, th nvstgaton of th changs n th form and concntraton valus of dstrbuton of pont dfcts has bn carrd out for dffrnt boundary condtons and two valus of th avrag mgraton lngth of dffusng spcs. Th cass of pur thrmal gnraton of pont dfcts wthn th lmts of th layr and gnraton of nonqulbrum dfcts du to hydrogn on mplantaton hav bn nvstgatd. It has bn shown that thr s a strong nflunc of th surfac on th concntraton valus and th form of dstrbuton of nonqulbrum pont dfcts whn th mplantaton nrgy dcrass. 13

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