HiPerFAST TM IGBTs with Diode C-Class High Speed IGBTs IXGN6N6C IXGN6N6CD S = 6V = 6A (sat).v = ns Symbol Test Conditions Maximum Ratings S = C to C 6 V V CGR = C to C, R GE = MΩ 6 V S Continuous ± V M Transient ± V = C (Limited by Leads) 7 A = C 6 A M = C, ms A SSOA = V, = C, R G = Ω M = A (RBSOA) Clamped Inductive Load @ 6 V P C = C 8 W -... + C M C T stg -... + C V ISOL /6 Hz t = min V~ I ISOL ma t = s V~ M d Mounting Torque./ Nm/lb.in. Terminal Connection Torque (M)./. Nm/lb.in. Weight g E 6C E 6CD SOT-7B, minibloc E Features G E G = Gate, C = Collector, E = Emitter Either Emitter Terminal can be used as Main or Kelvin Emitter International Standard Package minibloc Aluminium Nitride Isolation - High Power Dissipation Anti-Parallel Ultra Fast Diode Isolation Voltage V~ Low (sat) for Minimum On-State Conduction Losses MOS Gate Turn-on - Drive Simplicity Low Collector-to-Case Capacitance (< pf) Low Package Inductance (< nh) - Easy to Drive and to Protect C E Applications Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max. (th) = μa, =.. V ES = S 6 μa = V = C ma I GES = V, = ±V ± na (sat) = A, = V, Note.. V = C.8 V AC Motor Speed Control DC Servo and Robot Drives DC Choppers Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies Advantages Easy to Mount with Screws Space Savings High Power Density 9 IXYS CORPORATION, All Rights Reserved DS9977A(/9)
Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. g fs = A, = V, Note 8 S C ies 7 pf C oes = V, = V, f = MHz pf C res 6 pf Q g 6 nc Q ge = A, = V, =. S 8 nc Q gc nc t d(on) 8 ns t ri Inductive load, = C ns t d(off) = A, = V 9 ns t fi = V, R G = Ω ns.8.8 mj t d(on) 8 ns t ri ns Inductive load, = C E on.9 mj I t C = A, = V d(off) ns = V, R G = Ω t fi 8 ns. mj R thjc.6 C/W R thcs. C/W SOT-7B minibloc IXGN6N6C IXGN6N6CD Reverse Diode (FRED) Symbol Test Conditions Characteristic Values ( = C, Unless Oherwise Specified) Min. Typ. Max. V F = 6A, = V, Note. V = C. V = 6A, -di = A/μs, = C 8. A = V, = V, = A, -di = A/μs, = V, = V ns R thjc.8 C/W Note : PulseTest, t μs, Duty Cycle, d %. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered,8,9,9,8,9,96,7,8 6,6,66 6,,6 B 6,68, 6,77,8 7,,7 B 7,7,8B by one or more of the following U.S. patents:,8,7,7,8,6,7,8, 6,9, B 6,, 6,7, B 6,79,69 7,6,97 B,88,6,,796,87,7,86,7 6,6,78 B 6,8, 6,7,6 6,77,78 B 7,7,7
IXGN6N6C IXGN6N6CD Fig.. Output Characteristics Fig.. Extended Output Characteristics @ Deg. C @ deg. C 9 8 7 6 = V V V 9V V 7 7 = V V V 9V V........ Fig.. Output Characteristics @ Deg. C Fig.. Temperature Dependence of (sat) 9 8 7 6 = V V V 9V V V C E (sat) - Normalized...9.8.7.6 = V = A = A = A..... 7 - Degrees Centigrade Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage Fig. 6. Input Admittance. T J = ºC 7.. = A A 7 = ºC ºC. A -ºC 6 7 8 9... 6 6. 7 7. 8 8. 9 IXYS CORPORATION, All Rights Reserved
IXGN6N6C IXGN6N6CD Fig. 7. Transconductance Fig. 8. Dependence of on R G g f s - Siemens 9 8 7 6 = -ºC ºC ºC - millijoules 6 = ºC = V = V = A = 7A = A = A 7 7 6 8 6 R G - Ohms Fig. 9. Dependence of on Fig.. Dependence of on Temperature - MilliJoules R G = Ohms R G = Ohms - - - - - = V V C E = V = ºC = ºC - millijoules R G = Ohms R G = Ohms - - - - - = V V C E = V = A = 7A = A 6 7 8 9 = A 7 - Degrees Centigrade Fig.. Gate Charge Fig.. Capacitance Fig.. Capacitance 9 6 V C E = V = A I G = ma Capacitance - PicoFarads - pf,, f = MHz C ies Cies C oes Coes Cres C res f = MHz 6 8 6 Q G - nanocoulombs CE IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_6N6C(7Y)--8-A
IXGN6N6C IXGN6N6CD 6 A nc = C = V 8 A = C = V 8 6 = C C C Q r = A, 6A, A 6 = A, 6A, A V A/μs 6 A/μs 8 V F Fig.. Forward Current Versus V F Fig.. Reverse Recorvery Charge Q r Fig.. Peak Reverse Current K f.. ns = C = V V FR V = C = 6A VFR.6 μs. t fr. = A, 6A, A.8. Q RM 9.. 8 C 6 Fig. 6. Dynamic Paraments Q r, Versus T vj. K/W. Z thjc. Z(th)JC [ ºC / W ]... 8 6 A/μs 8 Fig. 7. Recorvery Time Versus. 6 A/μs 8 di F Fig. 8. Peak Forward Voltage M and DSEP x6-6a...... s. t.... Fig. 7. Maximum Transient Thermal Impeadance Juection Pulse to Case Width [(for s ] Diode) Fig. 7. Maximum Transient Thermal Impedance (for diode) 9 IXYS CORPORATION, All Rights Reserved