Advance Technical Information X-Class HiPerFET TM Power MOFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN11N85X V D = 85V I D25 = 11A R D(on) 33m D minibloc, OT-227 E153432 ymbol Test Conditions Maximum Ratings V D = 25 C to 15 C 85 V V DR = 25 C to 15 C, R = 1M 85 V Continuous 3 V M Transient 4 V I D25 = 25 C 11 A I DM = 25 C, Pulse Width Limited by M 22 A I A = 25 C 55 A E A = 25 C 3 J P D = 25 C 117 W dv/dt I I DM, V DD V D, 15 C 5 V/ns -55... +15 C M 15 C T stg -55... +15 C V IOL 5/6 Hz, RM t = 1 minute 25 V~ I IOL 1mA t = 1 second 3 V~ M d Mounting Torque 1.5/13 Nm/lb.in Terminal Connection Torque 1.3/11.5 Nm/lb.in Weight 3 g Features = ate = ource International tandard Package minibloc, with Aluminium Nitride Isolation Isolation Voltage 25V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R D(on) D D = Drain Advantages ymbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise pecified) Min. Typ. Max. High Power Density Easy to Mount pace avings BV D = V = 3mA 85 V (th) V D = = 8mA 3.5 5.5 V I = 3V, V D = V 2 na I D V D = V D, = V 5 A = 125 C 5 ma R D(on) = 1V = 55A, Note 1 33 m Applications witch-mode and Resonant-Mode Power upplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and ervo Controls 216 IXY CORPORATION, All Rights Reserved D731(6/16)
IXFN11N85X ymbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise pecified) Min. Typ. Max OT-227B (IXFN) Outline g fs V D = 1V = 55A, Note 1 43 72 R i ate Input Resistance.55 C iss 17 nf C oss = V, V D = 25V, f = 1MHz 16 nf C rss 26 pf Effective Output Capacitance C o(er) Energy related = V 47 pf C o(tr) Time related V D =.8 V D 217 pf t d(on) 5 ns Resistive witching Times t r 25 ns V t = 1V, V D =.5 V D = 55A d(off) 144 ns R t = 1 (External) f 11 ns Q g(on) 425 nc Q gs = 1V, V D =.5 V D = 55A 15 nc Q gd 225 nc R thjc.17 C/W R thc.5 C/W (M4 screws (4x) supplied) ource-drain Diode ymbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise pecified) Min. Typ. Max. I = V 11 A I M Repetitive, Pulse Width Limited by M 44 A V D I F = I, = V, Note 1 1.4 V t rr 25 ns I F = 55A, -di/dt = 3A/ s Q RM 5.5 μc V I R = V, = V RM 54. A Note 1. Pulse test, t 3 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical pecifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXY reserves the right to change limits, test conditions, and dimensions without notice. IXY Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXY MOFETs and IBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.. patents: 4,86,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXFN11N85X Fig. 1. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC 11 = 1V 25 = 1V 9V 9 8 2 7 6 5 4 3 2 1 5V.5 1 1.5 2 2.5 3 3.5 4 15 5 5 1 15 2 25 11 9 Fig. 3. Output Characteristics @ = 125ºC = 1V 3. 2.6 Fig. 4. R D(on) Normalized to I D = 55A Value vs. Junction Temperature = 1V 8 7 6 5 4 3 RD(on) - Normalized 2.2 1.8 1.4 1. I D = 11A I D = 55A 2 1 1 2 3 4 5 6 7 8 9 5V.6.2-5 -25 25 5 75 125 15 - Degrees Centigrade Fig. 5. R D(on) Normalized to I D = 55A Value vs. Drain Current 1.3 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 3. = 1V 1.2 RD(on) - Normalized 2.6 2.2 1.8 1.4 = 125ºC = 25ºC BVD / V(th) - Normalized 1.1 1..9.8.7 BV D (th) 1..6.6 5 15 2 25 I D - Amperes.5-6 -4-2 2 4 6 8 12 14 16 - Degrees Centigrade 216 IXY CORPORATION, All Rights Reserved
IXFN11N85X 12 Fig. 7. Maximum Drain Current vs. Case Temperature 16 Fig. 8. Input Admittance 14 12 8 6 4 8 6 = 125ºC 25ºC - 4ºC 4 2 2-5 -25 25 5 75 125 15 - Degrees Centigrade 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 - Volts 14 Fig. 9. Transconductance = - 4ºC 3 Fig. 1. Forward Voltage Drop of Intrinsic Diode 12 25 25ºC 2 g f s - iemens 8 6 4 125ºC I - Amperes 15 = 125ºC = 25ºC 2 5 2 4 6 8 12 14 16 I D - Amperes.3.4.5.6.7.8.9 1. 1.1 1.2 1.3 V D - Volts 1 Fig. 11. ate Charge Fig. 12. Capacitance V D = 425V V - Volts 8 6 4 2 I D = 55A I = 1mA Capacitance - NanoFarads 1 1.1.1 Ciss Coss f = 1 MHz Crss 5 15 2 25 3 35 4 45 Q - NanoCoulombs IXY Reserves the Right to Change Limits, Test Conditions, and Dimensions..1 1 1
IXFN11N85X 16 Fig. 13. Output Capacitance tored Energy Fig. 14. Forward-Bias afe Operating Area 14 R D(on) Limit EO - MicroJoules 12 8 6 4 2 1 2 3 4 5 6 7 8 9 = 25ºC Fig. 15. Maximum Transient Thermal ingle Impedance Pulse 1 1.1 1 1 1,.2 Fig. 15. Maximum Transient Thermal Impedance aaaaa.1 Z(th)JC - K / W = 15ºC DC 25µs µs 1ms 1ms.1.1.1.1.1.1.1 1 1 Pulse Width - econds 216 IXY CORPORATION, All Rights Reserved IXY REF: F_11N85X (U9-D37) 6-6-16