N-Channel 150 V (D-S) MOSFET

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Transcription:

N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering Information: -T-GE3 (Lead (Pb)-free and Halogen-free) 7.6 nc.75 mm FEATURES ThunderFET technology optimizes balance of R S(on), Q g, Q sw and Q oss % R g and UIS tested Material categorization: For definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Primary side switch Synchronous rectification C/C conversion Load switching Boost converters C/AC inverters G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source Voltage V S 5 V Gate-Source Voltage V GS ± 2 T C = 25 C 2.2 T C = 7 C 6 Continuous rain Current (T J = 5 C) I T A = 25 C 5.3 a,b T A = 7 C 4.3 a,b A Pulsed rain Current (t = 3 μs) I M 5 T C = 25 C 4 g Continuous Source-rain iode Current I S T A = 25 C 3. a,b Single Pulse Avalanche Current I AS L =. mh Single Pulse Avalanche Energy E AS 5 mj T C = 25 C 52 T C = 7 C 33 Maximum Power issipation P W T A = 25 C 3.7 a,b T A = 7 C 2.4 a,b Operating Junction and Storage Temperature Range T J, T stg -55 to 5 C Soldering Recommendations (Peak Temperature) c,d 26 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a,e t s R thja 26 33 C/W Maximum Junction-to-Case (rain) Steady State R thjc.9 2.4 Notes a. Surface mounted on " x " FR4 board. b. t = s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 22-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 8 C/W. f. Based on T C = 25 C. g. Package limited. S3-2288-Rev. A, 4-Nov-3 ocument Number: 63548

SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source Breakdown Voltage V S V GS = V, I = 25 μa 5 V V S Temperature Coefficient V S /T J 97 I = 25 μa V GS(th) Temperature Coefficient V GS(th) /T J -6.9 mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 25 μa 3 4.2 V Gate-Source Leakage I GSS V S = V, V GS = ± 2 V ± na V S = 5 V, V GS = V Zero Gate Voltage rain Current I SS V S = 5 V, V GS = V, T J = 55 C μa On-State rain Current a I (on) V S 5 V, V GS = V 2 A rain-source On-State Resistance a V GS = V, I = A.48.58 R S(on) V GS = 7.5 V, I = 7 A.66.85 Forward Transconductance a g fs V S = 5 V, I = A S ynamic b Input Capacitance C iss 42 Output Capacitance C oss V S = 75 V, V GS = V, f = MHz 3 pf Reverse Transfer Capacitance C rss 6 Total Gate Charge Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Q g V S = 75 V, V GS = V, I = A 9.5 4.5 7.6.5 Gate-Source Charge Q gs V S = 75 V, V GS = 7.5 V, I = A 2.5 nc Gate-rain Charge Q gd 3.6 Output Charge Q oss V S = 75 V, V GS = V 23.6 36 Gate Resistance R g f = MHz.4.3 2 Turn-On elay Time t d(on) 3 26 Rise Time t r V = 75 V, R L = 7.5 22 Turn-Off elay Time t d(off) I A, V GEN = 7.5 V, R g = 4 28 Fall Time t f 9 8 Turn-On elay Time t d(on) 2 24 ns Rise Time t r V = 75 V, R L = 7.5 8 6 Turn-Off elay Time t d(off) I A, V GEN = V, R g = 3 26 Fall Time t f 8 6 rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = 25 C 4 Pulse iode Forward Current a I SM 5 A Body iode Voltage V S I S = 4 A, V GS = V.85.2 V Body iode Reverse Recovery Time t rr 94 8 ns Body iode Reverse Recovery Charge Q rr 9 38 nc I F = A, di/dt = A/μs, T J = 25 C Reverse Recovery Fall Time t a 35 ns Reverse Recovery Rise Time t b 59 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S3-2288-Rev. A, 4-Nov-3 2 ocument Number: 63548

TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 6 5 V GS = V thru 9 V 48 4 I - rain Current (A) 36 24 V GS = 8 V V GS = 7 V I - rain Current (A) 3 2 T C = 25 C 2 V GS = 6 V V GS = 5 V V GS = 4 V. 2. 4. 6. 8.. V S - rain-to-source Voltage (V) Output Characteristics T C = 25 C T C = - 55 C. 2. 4. 6. 8.. V GS - Gate-to-Source Voltage (V) Transfer Characteristics.5.2 8 R S(on) - On-Resistance (Ω).9.6.3 V GS = 7.5 V V GS = V C - Capacitance (pf) 6 4 2 C oss C iss. 2 3 4 5 I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage C rss 6 32 48 64 8 V S - rain-to-source Voltage (V) Capacitance V GS - Gate-to-Source Voltage (V) 8 6 4 2 I = A V S = 5 V V S = 75 V V S = V R S(on) - On-Resistance (Normalized) 2..7.4..8 I = A V GS = V V GS = 7.5 V. 2. 4. 6. 8.. Q g - Total Gate Charge (nc) Gate Charge.5-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S3-2288-Rev. A, 4-Nov-3 3 ocument Number: 63548

TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).3 I S - Source Current (A).. T J = 5 C T J = 25 C R S(on) - On-Resistance (Ω).24.8.2.6 T J = 25 C I = A T J = 25 C...2.4.6.8..2 V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage. 5 6 7 8 9 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.5.2 8 V GS(th) - Variance (V) -. -.4 I = 5 ma Power (W) 6 4 -.7 I = 25 μa 2 -. - 5-25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient I M Limited I - rain Current (A) I Limited Limited by R S(on) *. μs ms ms ms T A = 25 C s Single Pulse s BVSS Limited. C.. V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient S3-2288-Rev. A, 4-Nov-3 4 ocument Number: 63548

TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 25 2 I - rain Current (A) 5 5 25 5 75 25 5 T C - Case Temperature ( C) Current erating* 65 2. 52.6 Power (W) 39 26 Power (W).2.8 3.4 25 5 75 25 5. 25 5 75 25 5 T C - Case Temperature ( C) T A - Ambient Temperature ( C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation P is based on T J(max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S3-2288-Rev. A, 4-Nov-3 5 ocument Number: 63548

TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse..... Square Wave Pulse uration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t 2 t. uty Cycle, = t 2 2. Per Unit Base =R thja = 8 C/W 3. T JM -T A =P M Z (t) thja 4. Surface Mounted uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse..... Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63548. S3-2288-Rev. A, 4-Nov-3 6 ocument Number: 63548

Case Outline for PowerPAK 22-8S Package Information d 2X. C 8 7 6 5 z 5 6 7 8 L K E E K d. C 2X 2 3 4 b 4 e 3 2 f. C AC d.8 C A A3 IM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A.67.75.83.27.3.33 A -.5 -.2 A3.2 REF.8 REF b.3 BSC.2 BSC 3.3 BSC.3 BSC 2.5 2.25 2.35.84.88.92 E 3.3 BSC.3 BSC E.6.7.8.63.67.7 e.65 BSC.26 BSC K.76 TYP.3 TYP K.4 TYP.6 TYP L.43 BSC.7 BSC z.525 TYP.2 TYP ECN: C2-2-Rev. A, 2-Mar-2 WG: 68 Note Millimeters will govern. Revision: 2-Mar-2 ocument Number: 6399

Application Note 826 RECOMMENE MINIMUM PAS FOR PowerPAK 22-8 Single.52 (3.86).39 (.99).68 (.725). (.255).6 (.45).88 (2.235).94 (2.39).26 (.66).25 (.635).3 (.76) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE ocument Number: 72597 www.vishay.com Revision: 2-Jan-8 7

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