Ultra-low noise HEMTs for deep cryogenic lowfrequency and high-impedance readout electronics Y. Jin, Q. Dong, Y.X. Liang, A. Cavanna, U. Gennser, L Couraud - Why cryoelectronics - Why HEMT - Noise characterization - Previous results - Input noise voltage - Input noise current - Noise and input capacitance - Applications - Conclusions and perspective CNRS/LPN, Marcoussis, France Laboratoire de Photonique et de Nanostructures http://www.lpn.cnrs.fr LPN
CNRS/LPN (http://www.lpn.cnrs.fr) one of the key national nanofabrication centers in France Fabrication Clean room : 1000m Molecular Beam Epitaxy III-V : AlGaAs/GaAs, (Al,In)GaAs/GaAs, InGaAsP/InP Lithography : e-beam nanolithography, Optical, Focused Ion Beam nanolithography Etching : Ion Beam Etching, Reactive Ion Etching Metal film deposition : Au, Ni, Co, Pt, Ti, W, Nb, Cr, Al Dielectric film deposition : Si, SiC, Si3N, SiO, AlO3 Packaging : MCP, bonding Analysis and e-transport characterization Transmission Electron Microscopy, X ray microscopy, STM, AFM, Low temperature and high vacuum STM, dilution cryostat with magnetic field, Hall effect, I-V, C(V), Noise spectrum analyzer
Why low-temperature electronics or cryoelectronics For most ultra-sensitive detectors: low-temperature low thermal noise (ktr) ½ 50MΩ: at 300K910nV/Hz ½ ; at.k108nv/hz ½ ; at 0mK 7.nV/Hz ½ Currently: 0mK High impedance Ge detector at 0 mk Long cable due to the long cable: - High capacitance limit time resolution - Microphonic noise limit the readable signal level Readout electronics > 100 K High performance cryoelectronics for high impedance readout electronics Low-temperature, low-power consumption and low-frequency noise
Why HEMT - comparison JFET, MOSFET and HEMT E F E V E C gate // P-N low 1/f noise non degenerate e - freeze-out at L.T condition: T>100K E F E C gate // oxide layer high 1/f noise degenerate e - no T limit small band gap δ doping large band gap E F E C gate // large gap 1/f noise? Degenerate e - no T limit
Noise characterization g d g s d e n i n s Channel voltage PSD Sv drain. K R L 300 K drain battery mf Voltage gain A = δv / δv v out ( ds) in( gs) relay g d amp. analyzer Equivalent input voltage PSD R in C in s A v A v-amp. source battery mf e nt =S v-drain /A v Channel effective impedance R = δv / δ I e out ds
Noise characterization R in relay. K g C in d s A v R L 300 K amp. Total equivalent input noise voltage e = e + e nt n ni Noise current induced noise voltage e = e e ni nt n Equivalent input noise current i = e / z n ni A v-amp. mf drain battery mf analyzer source battery e nt (V/Hz 1/ ) 10-8 10-9 10-10 e n i n 10 0 10 1 10 10 3 10 10 5 g f (Hz) d s Input 10 pf 50 pf 100 pf 300 pf 1 nf 50 Ω at. K
Previous results Mesoscopic devices at few tens mk for quantum ballistic transport investigation http://www.lpn.cnrs.fr/en/phynano/nanofet.php Fully ballistic 1D FET Appl. Phys. Lett. 97, 33505 (010) Un of the 1/f noise sources in HEMTs at.k: gate leakage current Appl. Phys. Lett. 99, 113505 (011) Input 1/f noise voltage in HEMTs at.k ~ 1/(C gs ) ½ J. Low Temp. Phys. 17, (01) Input white noise voltage in HEMT at.k ~ efi ds /(g m )
Input noise voltage (9 pf) Noise voltage HEMT with C gs = 9 pf, C gd = 7.8 pf I ds = 1 ma and V ds = 100 mv Gate Leakage current: I gs = -0. aa General: few tens of aa down to < 1 aa (aa=10-18 A) e n (V/Hz 1/ ) 10-9 8 10 0 10 10 f (Hz) e n simulat. at. K. K g R L Noise voltage:.3 nv/hz ½ at 1 Hz.1 nv/hz ½ at 10 Hz 0.7 nv/hz ½ at 100 Hz 0.3 nv/hz ½ at 1 khz d 300 K amp. drain battery mf analyzer A s v-amp. R source battery in A v e = e + e e nt ni n n mf
Input noise voltage: comparison Noise voltage: comparison with Si JFET 7 Input noise voltage (nv/sqrt(hz)) 5 3 1 InterFET JFETs at 300K NJ50L C gs = 100pF NJ1800DL C gs = 10pF CNRS/LPN HEMT at K C gs 9 pf 0 10 0 10 1 10 10 3 10 10 5 f (Hz) Laboratoire de Photonique et de Nanostructures http://www.lpn.cnrs.fr LPN
Input noise current (9 pf) e ni (V/Hz 1/ ) Noise current HEMT with C gs = 9 pf, C gd = 7.8 pf I ds = 1 ma and V ds = 100 mv Gate Leakage current: I gs = -0. aa Measured with different C input 10-8 10-9 10-10 10 0 10 1 10 10 3 10 10 5 f (Hz) Input 10 pf 50 pf 100 pf 300 pf 1 nf at. K. K g C in d s A v R L 300 K amp. A v-amp. e z e e z i drain battery mf analyzer mf ni / = nt n / = n source battery Noise current induced noise voltage with C input =10pF at 1 Hz 0 nv/hz ½ the total input capacitance (C gs +C input +(1+A v )C gd ) 150 pf impedance of 1 GΩ 0 aa/hz ½ at 1 Hz
Input noise charge (9 pf) Equivalent Noise Charge HEMT with C gs = 9 pf, C gd = 7.8 pf I ds = 1 ma and V ds = 100 mv Gate Leakage current: I gs = -0. aa Measured with different C input enc (e/hz 1/ ) 10 1 Input 10 pf 50 pf 100 pf 300 pf 1 nf. K g C in d s A v R L 300 K amp. A v-amp. drain battery mf analyzer mf source battery ene = e C + C + (1 + A ) C nt in gs v gd Equivalent noise charge with C input =10pF 5 e/hz ½ at 10 Hz 0.5 e/hz½ at 1 khz 10 0 10 1 10 10 3 10 10 5 f (Hz)
Input noise voltage at. K and gate configurations Gate surface g m (ms) For Ge detector. 10 µm 9pF 35 (with I ds =1mA, V ds =100mV) For microcalorimeter.0 10 µm pf 110 For mesoscopic sys..0 10 3 µm 5.3 pf g d (ms) 0.75 1.7 1.7 A v 8.7 3 10.3 @1Hz 1 @1Hz 30 @1Hz e n-1/f (nv/hz ½ ).1 @10Hz 0.73 @100Hz.5 @10Hz 1.5 @100Hz 11.7 @10Hz @100Hz 0.3 @1kHz 0.5 @1kHz 1. @1kHz e n-white (nv/hz ½ ) 0. 0.15 0.3 e n-1/f ~ 1 (C gs ) ½
Input noise current at. K and gate configurations Gate surface (with I ds =1mA, V ds =100mV) For Ge detector. 10 µm For microcalorimeter.0 10 µm For mesoscopic sys..0 10 3 µm g m (ms) g d (ms) 35 0.75 110 1.7 1.7 C input (pf) 10 10 5 A v-capa 5.3 @C input =10pF 7.3 @C input =10pF 5.1 @C input =5pF C gs (pf) C gd (pf) 9 7.8.5 3.7 5.3 1.1 C total (pf) 15 7 17 (πfc total ) -1 @1Hz (Ω) 1.0 10 9. 10 9 1 10 9 0 @1Hz.7 @1Hz 3.7 @1Hz i n (aa/hz ½ ) 3 @10Hz 1 @10Hz 11 @10Hz 105 @100Hz 7 @100Hz 3 @100Hz 33 @1kHz 09 @1kHz 100 @1kHz e ni (nv/hz ½ ) @1Hz (Ω) 0 1 59 i n-1/f ~(C gs ) ½
Applications For Ge detector For microcalorimeter For mesoscopic sys. Gate surface. 10 µm 9pF.0 10 µm pf.0 10 3 µm 5.3 pf For Ge detectors in dark matter search: SuperCDMS collaboration: http://cdms.berkeley.edu/cdms_collab.html EDELWEISS collaboration: see poster by C. Nones For microcalorimeter: presentation by X. de la Broïse For mesoscopic sys.: presentation by A. Anthore for the work on Quantum Limit of Heat Flow Across a Single Electronic Channel Published online 3 October 013 [DOI:10.11/science.1191] For power below 100µW down to 1nW: see poster by Q. Dong
Conclusions and perspectives - Specially designed and fabricated HEMTs at or below. K can replace Si JFETs with a better noise (current) performance - 1/f noise voltage can be reduced by increasing C gs - 1/f noise current can be decreased by reduce C gs - White noise below 0.1 nv/l Hz can be expected - High impedance cryogenic detectors, FIR, THz, Nuclear Phy. Acknowledgements This work was supported in part by the Réseau RENATECH, le RTRA Triangle de la Physique grants No. 008-015T and No. 009-00T and European FP7 space project CESAR grant No. 355. Q. D. is funded by the BDI CNRS/CEA. Laboratoire de Photonique et de Nanostructures http://www.lpn.cnrs.fr LPN
Noise voltage evolution with temperature Experimental observation e n (V/sqrt(Hz) 3 10-9 9 8 7 5 09OC18 µx1mm T = 78 K Vds = 0 mv, Ids = 0.5 ma T = 7 K T = 55 K T = K T = 3 K T = 5 K T = 1 K T = 8 K T =. K T = 1.7 K Input noise voltage at 100 Hz (nv/hz ½ ).0 3.5 3.0.5.0 1.5 1.0 HEMT @ Vds = 0 mv, Ids = 0.5 ma Input noise voltage at 100Hz Input white noise voltage 1.0 0.8 0. 0. 0. Input white noise voltage (nv/hz ½ ) 3 10 10 3 10 10 5 8 8 8 f (Hz) 0.5 0 0 0 Temperature (K) 0 80 Te n-1/f Te n-white