NPN Silicon RF Transistor* For low noise, highgain amplifiers up to GHz For linear broadband amplifiers f T = 8 GHz, F = db at 900 MHz * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP9 RCs = C = E = B = E SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 80 ma Base current I B Total power dissipation ) P tot 580 mw T S 7 C Junction temperature T j 50 C Ambient temperature T A 65... 50 Storage temperature T stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 5 K/W TS is measured on the collector lead at the soldering point to the pcb For calculation of RthJA please refer to Application Note Thermal Resistance 005
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO µa V EB = V, I C = 0 DC current gain I C = 0 ma, V CE = 8 V, pulse measured h FE 70 0 0 005
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 6 8 GHz I C = 50 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded C cb 0.59 0.9 pf Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Noise figure I C = ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz I C = ma, V CE = 8 V, Z S = Z Sopt, f =.8 GHz C ce 8 C eb.5 F.6 db Power gain, maximum available ) G ma I C = 0 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 8 I C = 0 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Transducer gain S e db I C = 0 ma, V CE = 8 V, Z S = Z L = 50Ω, f = 900 MHz.5 I C = 0 ma, V CE = 8 V, Z S = Z L = 50Ω, f =.8 GHz 8.5 G ma = S / S (k(k²) /) 005
SPICE Parameter (GummelPoon Model, BerkleySPICE G.6 Syntax): Transitor Chip Data: IS = 78 fa VAF = V NE =.95 VAR =.87 V NC = 0.97 RBM = Ω CJE =.8 ff TF = 8.88 ps ITF = 0.9689 ma VJC =.88 V TR =.007 ns MJS = 0 XTI = BF = 5 IKF = 699 A BR =.67 IKR = 0.0795 A RB =.868 Ω RE = 0.765 VJE = 0.7076 V XTF = 0.6977 PTF = 0 deg MJC = 0.000 CJS = 0 ff NK = 0 FC = 0.706 NF = 0.95 ISE =.67 fa NR =.89 ISC = 0.0709 fa IRB = 0.976 ma RC = 0.98 Ω MJE = 0.865 VTF = 0.8 V CJC = 95.0 ff XCJC = 0.0556 VJS = 0.75 V EG =. ev TNOM 00 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = 0.8 nh L BO = 0.65 nh L EI = 0. nh L EO = 0. nh L CI = 0.07 nh L CO = 0. nh C BE = 5 ff C CB = 9 ff C CE = 8 ff Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: http//www.infineon.com/silicondiscretes 005
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 600 mw 500 K/W 50 Ptot 00 50 RthJS 00 50 00 50 0 50 0.5 0. 0.05 0.0 0.0 0.005 D = 0 0 0 0 0 60 80 0 0 C 50 T S 0 7 6 5 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = 0 0.005 0.0 0.0 0.05 0. 0.5 0 7 6 5 s 0 t p 005 5
Package SOT BFP9 Package Outline +0. 0.8 0.05.9 ±0..9.7 B +0. 0. 0.05 5 M B. ±0.5 0.5 MIN. MAX. 0...8 M A ±0. 0. MAX. MAX. 0.08...0.5. ±0. A Foot Print 0.8. 0.8. 0.8 0.8 0.9. 0.9 Marking Layout Manufacturer s Date code (Year/Month) RF s 56 005, June Pin Type code BFP8 Example Standard Packing Reel ø80 mm =.000 Pieces/Reel Reel ø0 mm =.000 Pieces/Reel.6 8 Pin.5.5 005 6
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