BFP196W. NPN Silicon RF Transistor*

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Transcription:

NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 ma to 80 ma Power amplifier for DECT and PCN systems f T = 7.5 GHz, F = 1. db at 900 MHz * Short term description 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP196W RIs 1 = E 2 = C = E = B SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 12 V Collectoremitter voltage V CES 20 Collectorbase voltage V CBO 20 Emitterbase voltage V EBO 2 Collector current I C 150 ma Base current I B 15 Total power dissipation 1) P tot 700 mw T S 69 C Junction temperature T j 150 C Ambient temperature T A 55... 150 Storage temperature T stg 55... 150 Thermal Resistance Parameter Symbol Value Unit Junction soldering point 2) R thjs 115 K/W 1 TS is measured on the collector lead at the soldering point to the pcb 2 For calculation of RthJA please refer to Application Note Thermal Resistance 1 2005090

Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 12 V I C = 1 ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 20 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO 1 µa V EB = 1 V, I C = 0 DC current gain I C = 50 ma, V CE = 8 V, pulse measured h FE 70 0 10 2 2005090

Electrical Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 5 7.5 GHz I C = 70 ma, V CE = 8 V, f = 500 MHz Collectorbase capacitance V CB = V, f = 1 MHz, V BE = 0, emitter grounded C cb 0.86 1. pf Collector emitter capacitance V CE = V, f = 1 MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = 1 MHz, V CB = 0, collector grounded Noise figure I C = 20 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz I C = 20 ma, V CE = 8 V, Z S = Z Sopt, f = 1.8 GHz C ce 0. C eb.9 F 1. 2. db Power gain, maximum available 1) G ma I C = 50 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 19 I C = 50 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 1.8 GHz 12.5 Transducer gain S 21e 2 db I C = 50 ma, V CE = 8 V, Z S = Z L = 50Ω, f = 900 MHz 1 I C = 50 ma, V CE = 8 V, Z S = Z L = 50Ω, f = 1.8 GHz 7 1G ma = S 21 / S 12 (k(k²1) 1/2) 2005090

SPICE Parameter (GummelPoon Model, BerkleySPICE 2G.6 Syntax): Transitor Chip Data: IS = 1.726 fa VAF = 20 V NE = 1.1766 VAR =.8128 V NC = 0.88299 RBM = 1 Ω CJE = 1.25 ff TF = 2.99 ps ITF = 1.9775 ma VJC = 0.7057 V TR = 2.21 ns MJS = 0 XTI = BF = 125 IKF = 0.29 A BR =.58 IKR = 0.019551 A RB = 1.2907 Ω RE = 0.75 VJE = 0.708 V XTF = 0.22 PTF = 0 deg MJC = 0.289 CJS = 0 ff NK = 0 FC = 0.50922 NF = 0.80012 ISE = 119.22 fa NR = 0.9288 ISC =.8666 fa IRB = 0.08011 ma RC = 0.2717 Ω MJE = 0.018 VTF = 0.1 V CJC = 1667 ff XCJC = 0.29998 VJS = 0.75 V EG = 1.11 ev TNOM 00 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = 0. nh L BO = 0.7 nh L EI = 0.26 nh L EO = 0.12 nh L CI = 0.06 nh L CO = 0.6 nh C BE = 68 ff C CB = 6 ff C CE = 22 ff Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: http//www.infineon.com/silicondiscretes 2005090

Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 800 mw K/W 600 Ptot 500 RthJS 2 00 00 200 0 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 0 0 20 0 60 80 0 120 C 150 T S 0 7 6 5 2 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 2 Ptotmax/PtotDC 1 D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 7 6 5 2 s 0 t p 2005090 5

Package SOT BFP196W Package Outline 2 ±0.2 1. 0.1 MAX. 0.1 0.9 ±0.1 A 0. +0.1 0.05 x 0.1 M 0.15 1 2 +0.1 0.6 0.05 2.1 ±0.1 0.1 MIN. Foot Print 0.6 Marking Layout Manufacturer Date code (Year/Month) 2005, June Pin 1 Type code Example BGA20 Standard Packing Reel ø180 mm =.000 Pieces/Reel Reel ø0 mm =.000 Pieces/Reel 0.2 2. 8 1.6 0.8 0.2 M A 0.15 +0.1 0.05 1.25 ±0.1 1.15 0.9 Pin 1 2.15 1.1 2005090 6

Published by Infineon Technologies AG, St.MartinStrasse 5, 81669 München Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2005090