XPT TM 65V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXH6N65BH V CES = 65V = 6A V CE(sat) 2.2V = 3ns t fi(typ) TO-27 Symbol Test Conditions Maximum Ratings V CES = 25 C to 75 C 65 V V CGR = 25 C to 75 C, R GE = M 65 V V GES Continuous ±2 V V GEM Transient ±3 V 25 = 25 C (Chip Capability) 5 A = C 6 A I F = C 7 A M = 25 C, ms 265 A SSOA V GE = 5V, T VJ = 5 C, R G = 5 M = 2 A (RBSOA) Clamped Inductive Load @V CE V CES t sc V GE = 5V, V CE = 36V, = 5 C μs (SCSOA) R G = 82, Non Repetitive P C = 25 C 536 W -55... +75 C M 75 C T stg -55... +75 C T L Maximum Lead Temperature for Soldering 3 C T SOLD.6 mm (.62in.) from Case for s 26 C M d Mounting Torque.3/ Nm/lb.in Weight 6 g G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features Optimized for 5-3kHz Switching Square RBSOA Anti-Parallel Sonic Diode Short Circuit Capability International Standard Package Advantages High Power Density Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV CES = 25 A, V GE = V 65 V V GE(th) = 25 A, V CE = V GE. 6.5 V ES V CE = V CES, V = V 25 A GE = 5 C 3 ma I GES V CE = V, V GE = 2V na V CE(sat) = 6A, V GE = 5V, Note.8 2.2 V = 5 C 2. V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 26 IXYS CORPORATION, All Rights Reserved DS9D(9/6)
Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs = 6A, V CE = V, Note 7 28 S C ies 259 pf C oes V CE = 25V, V GE = V, f = MHz 3 pf C res pf Q g(on) 86 nc Q ge = 6A, V GE = 5V, V CE =.5 V CES 22 nc Q gc 35 nc 9 ns t ri Inductive load, = 25 C 8 ns = 6A, V GE = 5V 3.2 mj t d(off) V CE = V, R G = 5 7 ns t fi Note 2 3 ns E off. mj 2 ns t ri Inductive load, = 5 C 7 ns = 6A, V GE = 5V.2 mj t d(off) V CE = V, R G = 5 2 ns t fi Note 2 88 ns E off.8 mj R thjc.28 C/W R thcs.2 C/W D A A2 A c IXXH6N65BH TO-27 (IXXH) Outline D L R L E R 2 b b2 b e 3 J M C A M B Q S D2 C P IXYS OPTION A P K M D B M E - Gate 2, - Collector 3 - Emitter D Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. V F I F = 3A, V GE = V, Note 2.5 V = 5 C.5 V I RM I = 5 C 25 A t F = 3A, V GE = V, rr -di = 5 C 78 ns F /dt = 9A/μs, V R = 3V R thjc.6 C/W Notes:. Pulse test, t 3μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V CE (clamp), or R G. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,835,592,93,8 5,9,96 5,237,8 6,62,665 6,,65 B 6,683,3 6,727,585 7,5,73 B2 7,57,338B2 by one or more of the following U.S. patents:,86,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,53,33 6,7,5 B2 6,759,692 7,63,975 B2,88,6 5,3,796 5,87,7 5,86,75 6,36,728 B 6,583,55 6,7,63 6,77,78 B2 7,7,537
IXXH6N65BH 2 Fig.. Output Characteristics @ = 25ºC V GE = 5V V 3V 2V V 2 2 Fig. 2. Extended Output Characteristics @ = 25ºC V GE = 5V V 8 6 V 9V 6 2 8 3V 2V V V 2 8V 9V 7V.5.5 2 2.5 3 3.5 5 5 2 25 8V 7V 2 Fig. 3. Output Characteristics @ = 5ºC V GE = 5V V 3V 2V 2..8 V GE = 5V Fig.. Dependence of V CE(sat) on Junction Temperature 8 6 V V 9V VCE(sat) - Normalized.6..2. = 2A = 6A 2.5.5 2 2.5 3 3.5.5 8V 7V.8 = 3A.6-5 -25 25 5 75 25 5 75 - Degrees Centigrade 7 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance = 25ºC 9 6 5 8 7 = - ºC 25ºC = 5ºC VCE - Volts 3 2 3A 6A = 2A 6 5 3 2 8 9 2 3 5 V GE - Volts 5 6 7 8 9 2 V GE - Volts 26 IXYS CORPORATION, All Rights Reserved
IXXH6N65BH Fig. 7. Transconductance Fig. 8. Gate Charge 6 35 = - ºC V CE = 325V = 6A 3 25ºC 2 I G = ma g f s - Siemens 25 2 5 5ºC VGE - Volts 8 6 5 2 5 5 2 25 3 - Amperes 2 3 5 6 7 8 9 Q G - NanoCoulombs Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area, f = MHz 2 Capacitance - PicoFarads, C ies C oes 8 6 = 5ºC Cres 2 R G = 5Ω dv / dt < V / ns 5 5 2 25 3 35 2 3 5 6 7 Fig.. Maximum Transient Thermal Impedance (IGBT) Z(th)JC - K / W........ Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH6N65BH. Fig. 2. Inductive Switching Energy Loss vs. Gate Resistance 8.5 Fig. 3. Inductive Switching Energy Loss vs. Collector Current 9 3.5 3. E off = 5ºC, V GE = 5V V CE = V 7 6. 3.5 E off V CE = V 8 7 Eoff - MilliJoules 2.5 2..5 = 6A 5 3 - MilliJoules Eoff - MilliJoules 3. 2.5 2..5 = 5ºC 6 5 3 - MilliJoules. = 3A 2. 2.5.5 = 25ºC. 5 5 2 25 3 35 5 5 55 R G - Ohms. 3 5 6 7 8 9 - Amperes 2. Fig.. Inductive Switching Energy Loss vs. Junction Temperature 5. Fig. 5. Inductive Turn-off Switching Times vs. Gate Resistance 7 Eoff - MilliJoules 2.2 2..8.6..2. E off V CE = V = 6A = 3A.5. 3.5 3. 2.5 2..5 - MilliJoules t f i - Nanoseconds 2 8 6 t f i t d(off) = 5ºC, V GE = 5V V CE = V = 6A = 3A 6 5 3 2 t d(off) - Nanoseconds.8.6..5 2.. 25 5 75 25 5 - Degrees Centigrade 5 5 2 25 3 35 5 5 55 R G - Ohms Fig. 6. Inductive Turn-off Switching Times vs. Collector Current 2 Fig. 7. Inductive Turn-off Switching Times vs. Junction Temperature 2 2 t f i t d(off) 8 2 t f i t d(off) 8 t f i - Nanoseconds 8 6 V CE = V = 25ºC = 5ºC 6 2 t d(off) - Nanoseconds t f i - Nanoseconds 8 6 V CE = V = 6A = 3A = 3A 6 2 t d(off) - Nanoseconds 2 8 2 8 3 5 6 7 8 9 - Amperes 6 6 25 5 75 25 5 - Degrees Centigrade 26 IXYS CORPORATION, All Rights Reserved
IXXH6N65BH 2 Fig. 8. Inductive Turn-on Switching Times vs. Gate Resistance 6 Fig. 9. Inductive Turn-on Switching Times vs. Collector Current 3 t r i t r i 28 t r i - Nanoseconds 6 2 8 = 5ºC, V GE = 5V V CE = V = 6A = 3A 8 6 2 - Nanoseconds t r i - Nanoseconds 2 8 6 V CE = V = 5ºC = 25ºC 26 2 22 2 8 - Nanoseconds 2 6 5 5 2 25 3 35 5 5 55 R G - Ohms 3 5 6 7 8 9 - Amperes 2 Fig. 2. Inductive Turn-on Switching Times vs. Junction Temperature 2 5 t r i 23 9 V CE = V 22 t r i - Nanoseconds 75 6 5 3 = 6A 2 2 9 8 - Nanoseconds = 3A 5 7 6 25 5 75 25 5 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH6N65BH Fig. 2. Forward Current vs. Forward Voltage 2. Fig. 22. Reverse Recovery Charge Q RR vs. -dif/dt IF - Amperes 8 6 2 T VJ = 25ºC 5ºC QRR - MicroCoulombs 2.2 2..8.6..2 T VJ = 5ºC V R = 3V I F = 5A 3A A..5.5 2 2.5 V F - Volts.8 6 8 2 6 8 2 -di F /dt - A/µs Fig. 23. Peak Reverse Current IRM vs. -dif/dt Fig. 2. Recover Time trr vs. -dif/dt 7 T VJ = 5ºC T VJ = 5ºC 6 V R = 3V I F = 5A 2 V R = 3V IRR - Amperes 5 3 3A A trr - Nanaseconds 8 6 I F = 5A 3A 2 A 6 8 2 6 8 2 -di F /dt - A/µs 2 6 8 2 6 8 2 -di F /dt - A/µs 5 Fig. 25. Recovery Energy EREC vs. -dif/dt.2 Fig. 26. Dynamic Parameters QRR, IRM vs. Virtual Junction Temperature TVJ 5 T VJ = 5ºC V R = 3V I F =5A. V R = 3V I F = 5A -di F/dt = 9A/µs EREC - MicroJoules 35 3 25 3A A KF.8.6 K F I RM 2. 5 K F Q RR 6 8 2 6 8 2 -di F /dt - A/µs.2 2 6 8 2 6 T VJ - Degrees Centigrade 26 IXYS CORPORATION, All Rights Reserved
IXXH6N65BH Fig. 27. Maximum Transient Thermal Impedance (Diode) Z(th)JC - ºC / W....... Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_6N65B(E6-RZ3) 9-23-6