rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HIGBT MODULS M18H-4H HIGH POWR SWITHING US M18H-4H I... 18 S... 1 Insulated Type 1-element in a Pack ISi Baseplate Soft Reverse Recovery Diode PPLITION Traction drives, High Reliability onverters / Inverters, D choppers OUTLIN DRWING & IRUIT DIGRM Dimensions in mm 19 ±. ±.1 11±.1 ±.1 ±.1 6 - M8 NUTS +.1. ±. 4 14 ±.1 14 ±. G M IRUIT DIGRM G - M4 NUTS screwing depth min.. 9.4 ±.. ±. 41. ±. 61. ±. 61. ±. 1±. 8 - φ ±.1 MOUNTING HOLS screwing depth min. 16.. ±. 4 ±. 1 ±. ±.1 8 +1 8 +1 LBL ±. 9. HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules Jul.
MITSUBISHI HIGBT MODULS rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules M18H-4H HIGH POWR SWITHING US MXIMUM RTINGS Symbol Item onditions Ratings S GS I IM I (Note ) IM (Note ) P (Note ) Tj Top Tstg iso tpsc ollector-emitter voltage Gate-emitter voltage ollector current mitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width G =, Tj = =, Tj = T = 8 Pulse (Note 1) Pulse (Note 1) T =, IGBT part RMS, sinusoidal, f = 6Hz, t = 1min. = 11, S 1, G = 1 Tj = 1 1 ± 18 6 18 6 16 4 ~ +1 4 ~ +1 4 ~ +1 4 1 W LTRIL HRTRISTIS IS IGS ies oes res Qg (Note ) td(on) tr on td(off) tf Symbol Item onditions G(th) (sat) off trr (Note ) Qrr (Note ) rec (Note ) ollector cut-off current Gate-emitter threshold voltage Gate leakage current ollector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge mitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy = S, G =, Tj = I = 18m, = 1, Tj = G = GS, =, Tj = I = 18, G = 1, Tj = (Note 4) I = 18, G = 1, Tj = 1 (Note 4) = 1, f = 1kHz G =, Tj = = 8, I = 18, G = 1, Tj = I = 18, G =, Tj = (Note 4) I = 18, G =, Tj = 1 (Note 4) = 8, I = 18, G = ±1 RG(on) =.Ω, Tj = 1, Ls = 8nH Inductive load = 8, I = 18, G = ±1 RG(off) =.Ω, Tj = 1, Ls = 8nH Inductive load = 8, I = 18, G = ±1 RG(on) =.Ω, Tj = 1, Ls = 8nH Inductive load Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (1 ).. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).. Junction temperature (Tj) should not exceed Tjmax rating (1 ). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Min Typ Max 8 4. Limits..4.8 18 6. 1.1 1.6. 1. 9 6 6 6 6...1.8 1.6 1...8. m µ nf nf nf µ mj/pulse mj/pulse µ mj/pulse HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules Jul.
MITSUBISHI HIGBT MODULS rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules M18H-4H HIGH POWR SWITHING US THRML HRTRISTIS Symbol Item onditions Rth(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance ontact thermal resistance Junction to ase, IGBT part Junction to ase, FWDi part ase to Fin, λgrease = 1W/m K Limits Min Typ Max. 8. 1. K/kW K/kW K/kW MHNIL HRTRISTIS M Symbol Item onditions TI da ds L-(int) Mounting torque Mass omparative tracking index learance distance in air reepage distance along surface Internal inductance M8 : Main terminals screw M6 : Mounting screw M4 : uxiliary terminals screw IGBT part Limits Min Typ Max.. 1. 6 19.. 1. 1 1. 6.. N m kg mm mm nh HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules Jul.
MITSUBISHI HIGBT MODULS rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules M18H-4H HIGH POWR SWITHING US PRFORMN URS 6 Tj = OUTPUT HRTRISTIS G = 1 6 TRNSFR HRTRISTIS = 1 G = G = 1 OLLTOR URRNT () 4 18 1 6 G = 1 G = 8 OLLTOR URRNT () 4 18 1 6 1 4 6 Tj = Tj = 1 4 6 8 1 1 OLLTOR-MITTR OLTG () GT-MITTR OLTG () OLLTOR-MITTR STURTION OLTG () 4 1 OLLTOR-MITTR STURTION OLTG HRTRISTIS G = 1 Tj = Tj = 1 6 1 18 4 6 MITTR-OLLTOR OLTG () 4 1 FR-WHL DIOD FORWRD HRTRISTIS Tj = Tj = 1 6 1 18 4 6 OLLTOR URRNT () MITTR URRNT () HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules Jul.
MITSUBISHI HIGBT MODULS M18H-4H rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules HIGH POWR SWITHING US 1 PITN HRTRISTIS G =, Tj = f = 1kHz GT HRG HRTRISTIS = 8, I = 18 Tj = PITN (nf) 1 1 1 ies oes res GT-MITTR OLTG () 16 1 8 4 1 1-1 1 1 1 1 OLLTOR-MITTR OLTG () 1 1 GT HRG (µ) HLF-BRIDG SWITHING NRGY HRTRISTIS HLF-BRIDG SWITHING NRGY HRTRISTIS SWITHING NRGIS (mj/pulse) 16 1 8 4 = 8, G = ±1 RG(on) = RG(off) =.Ω Tj = 1, Inductive load on off rec SWITHING NRGIS (mj/pulse) 1 1 = 8, I = 18 G = ±1 Tj = 1, Inductive load on off 6 1 18 4 6 OLLTOR URRNT () rec. 1 1.. GT RSISTN (Ω) HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules Jul.
MITSUBISHI HIGBT MODULS rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules M18H-4H HIGH POWR SWITHING US SWITHING TIMS () 1 1 1 1-1 HLF-BRIDG SWITHING TIM HRTRISTIS = 8, G = ±1 RG(on) = RG(off) =.Ω Tj = 1, Inductive load td(off) td(on) tf tr RRS RORY TIM () 1 1 1 1 FR-WHL DIOD RRS RORY HRTRISTIS = 8, G = ±1 RG(on) = RG(off) =.Ω Tj = 1, Inductive load lrr trr 1 4 1 1 RRS RORY URRNT () 1-1 1 1 1 1 4 1-1 1 1 1 1 1 1 1 4 OLLTOR URRNT () MITTR URRNT () NORMLIZD TRNSINT THRML IMPDN 1. 1..8.6.4. TRNSINT THRML IMPDN HRTRISTIS Single Pulse, T = Rth(j c)q = 8K/kW Rth(j c)r = 1K/kW 1-1 1-1 1 1 1 OLLTOR URRNT () 4 1 RRS BIS SF OPRTING R (RBSO) 11, G = +/-1 Tj = 1, RG(off).Ω 1 1 TIM (s) OLLTOR-MITTR OLTG () HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules Jul.