The Effect of Deposition Parameter on Electrical Resistivity of TiAlN Thin Film

HWAHAK KONGHAK Vol. 40, No. 4, August, 00, pp. 59-533 TiAlN Electrical Resistivity * * (00 4 3, 00 7 31 ) The Effect of Deposition Parameter on Electrical Resistivity of TiAlN Thin Film Young Soo Song, Yo Han Byun, Hye In Kim, Jin Koo Yoon, In Sook Kim* and Chee Won Chung School of Chemical Engineering, Inha University, Incheon 40-751, Korea *U-Team, Samsung Advanced Institute of Technology, Suwon 440-660, Korea (Received 3 April 00; accepted 31 July 00) (dc magnetron reactive sputtering) N flow rate dc power!" TiAlN #$ %&'( )*+., #$' -./ electrical resistivity 0 1)* 34 51 34/6 78 9 X-ray :;< )*+. FESEM, #$= grain > 8?@ A BC DE)*+../F = G' - H4IJK, N flow rate0 0L' MN OP QRI dc power0 0L' MN( STUJ 0)*+. Electrical resistivityf N flow rate= G' -V( H4 W X KYZ[\, dc power0 0]^ QRF _` aijb 0]^ 0I+. Abstract TiAlN thin films were deposited at room temperature by varying nitrogen flow rate, dc power and deposition pressure by dc magnetron reactive sputtering. The deposition rate and electrical resistivity of the deposited films were investigated and x-ray diffraction(xrd) was used to examine crystalline structure and crystallinity of the film. Surface morphology and grain shape of the deposited films were observed by using field emission scanning electron microscopy(fesem). The deposition rate was no noticeable variation for the change of deposition pressure but it was a little decrease with increasing N flow rate and was proportionally increased with increasing dc power. Electrical resistivity was constant with respect to the change of N flow rate but it was decreased as a dc power increased and increased as a deposition pressure increased. Key words: TiAIN, Electrical Resistivity, Dc Magnetron Sputtering, FESEM 1. Hard material coating TiN [1, ]!" # $ [3, 4]. %& hardness, adhesion, friction %' oxidation resistance ( )*+, -. / 0 1 34$. +3 5* TiN 67 8 TiAlN+ 94$. TiAlN :;,< =1>?@ A 0BC D E F GE H ( I J*, -. 1980K6 LMN,<, 8', OP Q 6 RST!" $[5, 6]. TiAlN :; sputtering, evaporation, ion plating (U V PVD H To whom correspondence should be addressed. E-mail: cwchung@inha.ac.kr WX Y Z @ [[7], +3 HW \ ]0 ^ _ `%abc denf gh HW i ji kl m A gh n o @ pd q,r sn tu @ :; Y u @ J* v] :; gh w + +4$. denfw + TiAlN :; gh u -, gh xc,,r s, dc power %' gas flow rate ( gh y@ : ; )z, { Y^ ( {} ~+!. " $[6-8]. %& +3 TiAlN :; 3!X gh y@ n yo ƒ gh4 :; Y+& {!Y 63,< 6 \*p!" pd[11-1] gh y@ TiAlN :; electrical resistivity {} ~ 6 " $. ˆ! thermal conductivity qš S 7 A thermal diffusivityn TiAlN :; 6 Œ y@ N flow ratež dc power %' gh xc yo ƒ gh4 :; electrical resistivity(ρ) yon Ym $. 59

530 Fig. 1. Schematic diagram of the dc magnetron sputtering system.. TiAlN :; ]0 ^_ `%abc den J n m ArU N j dn Œ SiO (4,000 )/Si,r s gh " $. / m3 gh J} š!yn Fig. 1 & k $. kl ^œ inch+d TiŽ Al+ 80 : 0 Y4 ji m $. v]p TiAlN :; gh žÿ p $. ˆ gh n A+,,rU klu 'n 5cm t $. v3 :; o, 1 rpmp,r+ " 0 sccm Ar d vz t" $. TiAlN :; N flow ratež dc power %' gh xc yo ƒ gh " $. Target # H, gh,r main shutter vz3 0 sccm Ar dž 53 W dc power presputtering 10ª«/ 3 / $. Mechanical pumpž )4 turbo molecular pumpn m gh /, 4±10 6 Torr t" $. Dektak surface profilometern m :; gh ²z" p D field emission scanning electron microscopy(fesem)(h-9000, Hitachi) + :; { Y^ ³ grain,ž µ (+ " $. 3 gh4 TiAlN :; )z!y Cu-Kα radiation m3 X-ray + thin film ¹º ª»" $. TiAlN :; electrical resistivity(ρ)¼ a four point probe(sr1000, Changmin)n + o $. 3. / N flow ratež dc power %' gh xc gh Œ y@ ½¾, gh4 TiAlN :; 6 XRDŽ FESEM 8' U electrical resistivity(ρ), + Ym" $. Fig. 3.5 mtorr gh xcu 53 W dc powern vz t N flow rate yo 6 gh4 TiAlN :; gh Ž electrical resistivity yon &k $. gh N flow rate g ˆ F$ vzà œ + $. Electrical resistivity N flow rate 4 sccmv -Á g % + vz3 ¼ &k $. ˆ N flow rate 4 sccm + / Y TiAlN :; gh Ž electrical resistivity N flow rate yo à ~ Ä Å @ $. N flow rate 40 4 00 8 Fig.. Deposition rate and electrical resistivity of TiAlN films deposited as a function of N flow rate; dc power: 53 W; deposition pressure: 3.5 mtorr; Ar flow rate: 0 sccm; target-to-substrate distance: 5 cm; deposition time: 0 min. n yo ƒ gh4 TiAlN :; X-ray ÆÇ Fig. 3 Œ $. ¹È N flow rate yo Y TiN(111), Ti AlN(110) ÉÊ3 peak $. %& N flow rate g <Ë+ : ; peak yo4 ¹Ì + Í$. ˆ Fig. 3 gh Y N flow rate yo :; )z!y à ~ Œ p Î 4$. %' TiN peak > &k& TiŽ Al 80 : 0 kl Y, p r54$. Fig. Ž 3pMN N flow rate yo 6 TiAlN :; gh Ž )z!y à ~ Ä p À»"[, kl " vz3 current 6 Ï critical N flow rate + N flow :; Y ³ gh ~ Œ $ 4 U v} $[8]. N flow rate yo À gh4 TiAlN :; FESEM m Fig. 4 &k $. :; =1 N flow rate g <Ë+ vð +D grain,ž ¹Ñ tm µ" + " $. 6 sccm N flow ratež 3.5 mtorr gh xc vz z dc power yo ˆ gh4 :; gh Ž electrical resistivity

TiAlN Electrical Resistivity Fig. 3. XRD patterns of TiAlN thin films deposited as a function of N flow rate. 531 Fig. 5. Deposition rate and electrical resistivity of TiAlN films deposited as a function of dc power; deposition pressure: 3.5 mtorr; N flow rate: 6 sccm; Ar flow rate: 0 sccm; target-to-substrate distance: 5 cm; deposition time: 0 min. Fig. 6. XRD patterns of TiAlN thin films deposited as a function of dc power. yo Fig. 5 $. gh dc power ÒÓ g electrical resistivity dc power 70 Wv -Á ÔÕT F % + {{ F $. Fig. N flow rate yo gh4 :; electrical resistivity Ö 1 Fig. 5 dc power yo gh4 :; electrical resistivity q dc power 6 p à ¼ @ $. + q dc power Y 3 :;+ µ ", -. electrical resistivity Ò p À»4$. Fig. 6 vz3 3.5 mtorr gh xcu 6 sccm N flow rate dc power yo gh4 TiAlN : ; XRD ÆÇ Ø$. N flow raten yo :; gh3? U V+ dc power g TiN Ti AlN peak intensity g " + 4$. 3 150 W Ti Al N Fig. 4. FESEM photograph of TiAlN films deposited as a function of N flow rate. (a) sccm, (b) 8 sccm 3 HWAHAK KONGHAK Vol. 40, No. 4, August, 00

53 Fig. 8. Deposition rate and electrical resistivity of TiAlN films deposited as a function of deposition pressure; dc power: 53 W; N flow rate: 6 sccm; Ar flow rate: 0 sccm; target-to-substrate distance: 5 cm; deposition time: 0 min. resistivity 3.5 mtorrá vz % + g " + 4 $. Fig. N flow raten y@ gh4 TiAlN :; gh `ß gh xc gh à ~ electrical resistivity 6À à ~ y@à G u @ $. gh xc yo 6 XRD ³ FESEM m + Ym" $. gh xc y@ gh4 TiAlN :; Fig. 3 N flow rate yo 6 ª»4 XRD ÆÇ U áv ¹È Y TiN(111) Ti AlN(110) peak ÉÊ $. 3 gh x C g <Ë+ peak intensity yo4 ¹Ì + Í$. N flow rate yo `ß gh xc yo TiAlN :; )z!y à ~ p Î 4$. FESEM m 1 yo4 ¹È gh xc â gh4 :; =1!Y& grain, à ~ + + G " $. 4. S 7 A thermal diffusivityn TiAlN :;+ N flow dc power %' gh xc ( y@ gh " $. gh 4 :;X gh, )z!y, :; grain µ ( * ª»" electrical resistivity yon ãä, a four point proben m sheet resistance ²z" $. gh gh xc g 6 vz N flow rate g 6À «F $ vzà $. % & dc power g 6À * p g $. Electrical resistivity N flow rate yo 6 à yon + Íp& dc power g Ð 70 WÁ ÔÕT F D + «F" + " $. gh xc yo 6À 3.5 mtorr gh xc + g @ $. 3 q dc power A g h xc electrical resistivity N flow rate yo À gh 4 :; electrical resistivity ¼ $ 6 p à @}n &k p G " $. / S 7 j3 TiAlN :; q dc power A gh xc gh " å 3$ )c o @ $. Fig. 7. FESEM photograph of TiAlN films deposited as a function of dc power. (a) 30 W, (b) 110 W, (c) 188 W peak &k& dc power g 1 intensity, Ò u @ $. dc power yo TiNU Ti AlN peak " Ù Ú Ti Al N peak + Û dc power TiAlN :; )z!y à ~ @ $. Fig. 7 dc power yo gh4 TiAlN :; FESEM m &k $. dc power g Ð grain ÜÝ µ ¹Ñp J"D, g " ¹Ì+ " $. 3 q dc powerv@þ :;+ Y µ " + 4$. Dc powern 53 W, N flow raten 6 sccmp vz t gh xc yo gh4 :; gh electrical resistivity Fig. 8 $. gh xc g 6 gh «g $ vz t " + "D, electrical (1016) 3 40 4 00 8 rate

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