MCC6-ioB hyristor Module = x M = 6 A A =. Phase leg Part number MCC6-ioB Backside: isolated 3 6 7 Features / Advantages: Applications: Package: O-AA hyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded AlO3-ceramic Line rectifying /6 Hz Softstart AC motor control Motor control Power converter AC power control Lighting and temperature control solation oltage: 36 ~ ndustry standard outline ohs compliant Soldering pins for PCB mounting Base plate: B ceramic educed weight Advanced power cycling erms and Conditions of Usage he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 6 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 6b
MCC6-ioB hyristor Symbol Definition Conditions = = = C J = C atings typ. max. 3 forward voltage drop = A = C.6 SM/DSM M/DM /D A (MS) = = = A A A C= 8 C = C J = C J threshold voltage J = C.8 for power loss calculation only r slope resistance 3.7 mω thermal resistance junction to case. K/W thjc total power dissipation = C W P GM P GA J J = C SM max. forward surge current t = ms; ( Hz), sine J = C t = 8,3 ms; (6 Hz), sine = C J junction capacitance = f = MHz = C 7 max. gate power dissipation t P= 3 µs C = C average gate power dissipation t = ms; ( Hz), sine t = 8,3 ms; (6 Hz), sine J C min..7..6 t = 3 µs P J = C ²t value for fusing t = ms; ( Hz), sine = C (di/dt) cr average forward current MS forward current critical rate of rise of current 8 sine t = 8,3 ms; (6 Hz), sine t = ms; ( Hz), sine t = 8,3 ms; (6 Hz), sine J = C = = = C J J = 6 9..6.8.38.3.9 8.3 7.87. Unit µa ma A A J pf J = C; f = Hz t P= µs; di G /dt =. A/µs; G =.A; = ⅔ repetitive, = A (dv/dt) critical rate of rise of voltage = ⅔ DM J = C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current /D /D thch thermal resistance case to heatsink. K/W GK = ; method (linear voltage rise) G gate trigger voltage = 6 = C D DM J J = - C W W W A/µs A/µs /µs. G gate trigger current D = 6 J = C ma J = - C.6 ma GD gate non-trigger voltage = ⅔ J = C. D DM GD gate non-trigger current ma L latching current t p = µs J = C ma G =.A; di G /dt =. A/µs H holding current D = 6 GK = J = C ma t gd gate controlled delay time = ½ J = C µs D DM G =.A; di G /dt =.A/µs non-repet., = t q turn-off time = ; = A; = ⅔ DM J = C µs di/dt = A/µs dv/dt = /µs t p = µs 6 A 6 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 6b
MCC6-ioB Package atings Symbol Definition Conditions min. typ. max. Unit MS MS current per terminal A J virtual junction temperature - C op operation temperature - C Weight M D M dspp/app dspb/apb O-AA stg storage temperature - C SOL mounting torque. terminal torque. creepage distance on surface striking distance through air isolation voltage t = second t = minute terminal to terminal terminal to backside /6 Hz, MS; SOL ma 3. 9.7 6. 6. 36 3 8 g Nm Nm mm mm Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MCC6-ioB MCC6-ioB Box 36 7 Similar Part Package oltage class MCMA6PA O-AA-B MCMA8PA O-AA-B Equivalent Circuits for Simulation * on die level = C hyristor J max threshold voltage.8 max slope resistance *. mω 6 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 6b
MCC6-ioB Outlines O-AA 3 6 7 6 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 6b
MCC6-ioB hyristor SM 8 6 SM = Hz FSM = 8% M J = C J = C dt [A s] = J = C J = C 8 AM 6 8 sin 6 3.. t [s] Fig. Surge overload current SM, FSM : Crest value, t: duration 3 t [ms] Fig. t versus time (- ms) 7 C Fig. 3 Max. forward current at case temperature 8 6 8 sin 6 3 6 8 AM 7 a thka K/W.8... 3 G [] : G, J = C : G, J = C 3: G, J = - C G 3 : P GA =. W : P GM = W GD, = C 6: P GM = W. 3 [ma] 6 Fig. Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. Gate trigger characteristics 3 Circuit B6 3x MCC6 or 3x MCD6 thka K/W.....3...6 t gd [µs] J = C limit typ. 8 6 dam 7 a Fig. 6 hree phase rectifier bridge: Power dissipation versus direct output current and ambient temperature... G Fig. 7 Gate trigger delay time 6 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 6b
MCC6-ioB hyristor SM 8 6 SM = Hz FSM = 8% M J = C J = C dt [A s] = J = C J = C 8 AM 6 8 sin 6 3.. t [s] Fig. Surge overload current SM, FSM : Crest value, t: duration 3 t [ms] Fig. t versus time (- ms) 7 C Fig. 3 Max. forward current at case temperature 8 6 8 sin 6 3 6 8 AM 7 a thka K/W.8... 3 G [] : G, J = C : G, J = C 3: G, J = - C G 3 : P GA =. W : P GM = W GD, = C 6: P GM = W. 3 [ma] 6 Fig. Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. Gate trigger characteristics 3 Circuit B6 3x MCC6 or 3x MCD6 thka K/W.....3...6 t gd [µs] J = C limit typ. 8 6 dam 7 a Fig. 6 hree phase rectifier bridge: Power dissipation versus direct output current and ambient temperature... G Fig. 7 Gate trigger delay time 6 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 6b