Is Now Part of To learn more about ON Semiconductor, please visit our website at

Similar documents
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

S3A - S3N General-Purpose Rectifiers

BAT54XV2 Schottky Barrier Diode

FFSH40120ADN-F155 Silicon Carbide Schottky Diode

FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.

FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.

RS1A - RS1M Fast Rectifiers

FFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.

PN2907 / MMBT2907 PNP General-Purpose Transistor

Features. T A =25 o C unless otherwise noted

FFSH30120A. Silicon Carbide Schottky Diode 1200 V, 30 A

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

FFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A

FFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A

FFSH20120ADN-F085. Silicon Carbide Schottky Diode 1200 V, 20 A

Is Now Part of To learn more about ON Semiconductor, please visit our website at

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.

74AC00, 74ACT00 Quad 2-Input NAND Gate

FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET

Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual

NGTB15N60S1EG. IGBT - Short-Circuit Rated. 15 A, 650 V V CEsat = 1.5 V

74VHC08 Quad 2-Input AND Gate

NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj

SN74LS147, SN74LS Line to 4 Line and 8 Line to 3 Line Priority Encoders LOW POWER SCHOTTKY

FDV301N Digital FET, N-Channel

FPF1007-FPF1009 IntelliMAX Advanced Load Products

Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

Is Now Part of To learn more about ON Semiconductor, please visit our website at

SN74LS151MEL. 8 Input Multiplexer LOW POWER SCHOTTKY

MMBT2369A NPN Switching Transistor

FDG6322C Dual N & P Channel Digital FET

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

FDS V P-Channel PowerTrench MOSFET

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460

NGTB40N120FL3WG. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS

FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

Is Now Part of To learn more about ON Semiconductor, please visit our website at

V N (8) V N (7) V N (6) GND (5)

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor

MC74AC259, MC74ACT Bit Addressable Latch

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

Applications. Bottom S S S. Pin 1 G D D D

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m

NGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

SN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Applications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V

Applications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V

NLSV2T Bit Dual-Supply Inverting Level Translator

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

NTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

NTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY

NXH160T120L2Q1PG, NXH160T120L2Q1SG. Q1PACK Module

SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features

NL17SV16. Ultra-Low Voltage Buffer

MC74AC109, MC74ACT109. Dual JK Positive Edge Triggered Flip Flop

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

onlinecomponents.com

Is Now Part of To learn more about ON Semiconductor, please visit our website at

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

SN74LS85MEL LOW POWER SCHOTTKY

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

Is Now Part of To learn more about ON Semiconductor, please visit our website at

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel

LOW POWER SCHOTTKY. ESD > 3500 Volts. GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND

MC74LV594A. 8-Bit Shift Register with Output Register

MC14099B. 8-Bit Addressable Latches

NTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

Is Now Part of To learn more about ON Semiconductor, please visit our website at

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

Transcription:

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.oemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor ow the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.oemi.com/site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Buyer is respoible for its products and applicatio using ON Semiconductor products, including compliance with all laws, regulatio and safety requirements or standards, regardless of any support or applicatio information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any licee under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FFB0UP0DN_F085 0A, 00V Ultrafast Dual Rectifiers Features High Reverse Voltage : V RRM = 00V Avalanche Energy Rated Planar Cotruction Applicatio Output Rectifiers Switching Mode Power Supply Freewheeling diode for motor application Power switching circuits Qualified to AEC Q0 RoHS Compliant Pin Assignments Description February 00 tm The FFB0UP0DN_F085 is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ionimplanted epitaxial planar cotruction. This device is intended for use as a freewheeling/clamping rectifier in a variety of switching power supplies and other power switching applicatio. Its low stored charge and hyperfast recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching traistors. FFB0UP0DN_F085 0A, 00V Ultrafast Dual Rectifiers Absolute Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 00 V V RWM Working Peak Reverse Voltage 00 V V R DC Blocking Voltage 00 V I f(avg) Average Rectified Forward Current @ T C = 55 o C 0 A I FSM Nonrepetitive Peak Surge Current 00 A 60Hz Single HalfSine Wave T J, T STG Operating Junction and Storage Temperature 55 to +75 C Thermal Characteristics T C = 5 C unless otherwise noted Symbol Parameter Max Units R θjc Maximum Thermal Resistance, Junction to Case.5 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F0UP0DN FFB0UP0DN_F085 TO6 mm 800 00 Fairchild Semiconductor Corporation FFB0UP0DN_F085 Rev. A www.fairchildsemi.com

Electrical Characteristics T C = 5 C unless otherwise noted V F I R t rr Symbol Parameter Min. Typ. Max Units I F = 0A I F = 0A V R = 00V V R = 00V I F =A, di/dt = 00A/µs, V CC = 0V I F =0A, di/dt = 00A/µs, V CC = 0V T C = 5 ο C T C = 50 ο C T C = 5 ο C T C = 50 ο C T C = 5 ο C T C = 5 ο C t a I F =0A, di/dt = 00A/µs, V CC = 0V T C = 5 ο C t b Q rr T C = 5 ο C T C = 5 ο C W AVL Avalanche Energy (L = 0mH) 0 mj Notes : Rth_jc value is specified for each die : Pulse: Test Pulse width = 00S, Duty Cycle = % 5 7 6 50.5.0 0 50 5 0 V V µa µa nc FFB0UP0DN_F085 0A, 00V Ultrafast Dual Rectifiers FFB0UP0DN_F085 Rev. A www.fairchildsemi.com

Typical Characteristics T C = 5 C unless otherwise noted Forward Current, IF [A] Capacitance, cj [pf] 0 0 T C = 75 o C T C = 00 o C T C = 5 o C 0. 0. 0. 0.6 0.8.0. Forward Voltage, V F [V] Figure. Typical Forward Voltage Drop 00 00 f = MHz 0 0. 0 00 Reverse Voltage, V R [V] Reverse Current, I R [µa] Reverse Recovery Time, t rr [] 00 0 0. 0.0 T C = 75 o C T C = 00 o C T C = 5 o C E 0 50 00 50 00 Reverse Voltage, V R [V] 50 5 0 5 0 5 Figure. Typical Reverse Current TC = 75 o C TC = 50 o C TC = 5 o C IF = 0A 0 50 00 50 00 50 00 di/dt [A/µs] FFB0UP0DN_F085 0A, 00V Ultrafast Dual Rectifiers Figure. Typical Junction Capacitance Figure. Typical Reverse Recovery Time Reverse Recovery Current, I rr [A] 8 6 I F = 0A TC = 75 o C TC = 50 o C TC = 5 o C 0 50 00 50 00 50 00 di/dt [µ/s] Figure 5. Typical Reverse Recovery Current Average Recitified Forward Current, IF(AV) [A] 0 8 6 DC 0 0 0 0 50 60 70 Case Temperature, T C ( o C) Figure 6. Case Temperature, T c [ o C] FFB0UP0DN_F085 Rev. A www.fairchildsemi.com

0.67 9.65 A.68.00 0.67 9.5 9.65 8.8 0.00 (.) 5.08 6. MIN.78 MAX.78. 0.99 0.5 0.5 MAX PLASTIC BODY STUB 0.5 M B A M FRONT VIEW DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL B.65..8.06 5.08.80.05 6.86 MIN 5.88.6 SEE DETAIL A 0.5 MAX 0.5 SEATING PLANE BACK VIEW DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL (5.8).79.78 DETAIL A, ROTATED 90 SCALE: X GAGE PLANE 0.7 0. 8 0 8 0 0.0 B NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO6, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y.5 009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO5P5X8N F) FILENAME: TO6A0REV8

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor ow the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.oemi.com/site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Buyer is respoible for its products and applicatio using ON Semiconductor products, including compliance with all laws, regulatio and safety requirements or standards, regardless of any support or applicatio information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any licee under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. nd Pkwy, Aurora, Colorado 800 USA Phone: 0 675 75 or 800 860 Toll Free USA/Canada Fax: 0 675 76 or 800 867 Toll Free USA/Canada Email: orderlit@oemi.com Semiconductor Components Industries, LLC N. American Technical Support: 800 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 790 90 Japan Customer Focus Center Phone: 8 587 050 www.oemi.com ON Semiconductor Website: www.oemi.com Order Literature: http://www.oemi.com/orderlit For additional information, please contact your local Sales Representative www.oemi.com

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FFB0UP0DN_F085