GENERL DESCRIPTION The SGM84782 is high-speed, low-voltage, low on-resistance, CMOS analog multiplexer/switch that configured as two 4-channel multiplexers. It operates from a single +1.8V to +4.2V power supply. Targeted applications include battery powered equipment that benefit from low R ON (4) and fast switching speeds (t ON = 17ns, t OFF = 9ns). The SGM84782 can handle rail-to-rail analog signals and is available in Green TQFN-3 3-16L and TSSOP-16 packages. PPLICTIONS Communication Systems Cell Phones Portable Instrumentation udio Signal Routing udio and Video Switching Computer Peripherals Low-Voltage Data-cquisition Systems FETURES Voltage Operation: 1.8V to 4.2V Low On-Resistance: 4 (TYP) at 4.2V Low On-Resistance Flatness -3d andwidth: 15MHz Fast Switching Times (+4.2V) t ON 17ns t OFF 9ns Low Crosstalk: -92d at 1MHz Rail-to-Rail Input and Output Operation Typical Power Consumption (<.1μW) TTL/CMOS Compatible reak-efore-make Switching Extended Industrial Temperature Range: -4 to +85 vailable in Green TQFN-3 3-16L and TSSOP-16 Packages PIN CONFIGURTIONS (TOP VIEW) Y2 Y V+ X2 16 15 14 13 ` Y 1 12 X1 FUNCTION TLE Y3 Y1 2 3 11 1 X X CONTROL INPUTS ENLE Select ON SWITCHES L L L X-X Y-Y L L H X-X1 Y-Y1 L H L X-X2 Y-Y2 L H H X-X3 Y-Y3 H ll Switches Open ENLE Y 1 Y2 2 Y 3 Y3 4 4 LOGIC 5 6 7 8 N.C. TQFN-3 3-16L 9 X3 16 15 14 13 V+ X2 X1 X = Don t Care. Y1 ENLE 5 6 12 11 X X3 N.C. 7 LOGIC 1 8 9 TSSOP-16 REV.. 2
PCKGE/ORDERING INFORMTION MODEL SGM84782 PIN- PCKGE SPECIFIED TEMPERTURE RNGE ORDERING NUMER PCKGE MRKING PCKGE OPTION TQFN-3 3-16L -4 to +85 SGM84782YTQ16/TR 84782 Tape and Reel, 3 TSSOP-16-4 to +85 SGM84782YTS/TR SGM84782YTS Tape and Reel, 3 SOLUTE MXIMUM RTINGS to...v to 4.6V nalog, Digital voltage range... -.3V to ( ) +.3V Continuous Current NO, NC, or COM...±1m Operating Temperature Range...-4 to +85 Junction Temperature...15 Storage Temperature Range...-65 to +15 Lead Temperature (soldering, 1s)...26 ESD Susceptibility HM...4V MM...4V NOTE: Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CUTION This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. SGMICRO reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. Please contact SGMICRO sales office to get the latest datasheet. PIN DESCRIPTION PIN TSSOP-16 TQFN-3 3-16L NME FUNCTION 1, 5, 2, 4 15, 3, 16, 2 Y-Y3 nalog Switch Y Inputs Y-Y3. 3 1 Y nalog Switch Y Output. 6 4 ENLE Digital Enable Input. Normally connect to. Drive to logic high to set all switches off. 7 5 N.C. Not Internally Connected. 8 6 Ground. 9 7 Digital ddress Input. 1 8 Digital ddress Input. 12, 14, 15, 11 1, 12, 13, 9 X-X3 nalog Switch X Inputs X-X3. 13 11 X nalog Switch X Output. 16 14 Power Supply. Exposed Pad Exposed pad should be soldered to PC board and connected to. 2
ELECTRICL CHRCTERISTICS ( = +4.2V, = V, V IH = +1.6V, V IL = +.6V, T = -4 to +85. Typical values are at = +4.2V, T = +25, unless otherwise noted.) PRMETER SYMOL CONDITIONS TEMP MIN TYP MX UNITS NLOG SWITCH nalog Signal Range On-Resistance V X_, V Y_, V X, V Y R ON -4 to +85 V = 4.2V, I X_, I Y_ = -1m, +25 4 5.5 V X, V Y = 1V, Test Circuit 1-4 to +85 6.5 On-Resistance Match etween Channels R ON = 4.2V, I X_, I Y_ = -1m, +25.16 1 V X, V Y = 1V, Test Circuit 1-4 to +85 1.5 On-Resistance Flatness Source OFF Leakage Current Channel ON Leakage Current DIGITL INPUTS R FLT(ON) I X_(OFF), I Y_(OFF) I X_(ON), I Y_(ON), I X(ON), I Y(ON) = 4.2V, I X_, I Y_ = -1m, +25 1.6 2.2 V X, V Y = 1V, 2.5V, Test Circuit 1-4 to +85 2.8 = 4.2V, V X_, V Y_ = 3.3V,.3V, V X, V Y =.3V, 3.3V = 4.2V, V X, V Y =.3V, 3.3V, V X_, V Y_ =.3V, 3.3V or floating -4 to +85 1 μ -4 to +85 1 μ Input High Voltage V INH -4 to +85 1.6 V Input Low Voltage V INL -4 to +85.5 V Input Leakage Current I IN_ V, V = V ENLE = V or 4.2V -4 to +85 1 μ DYNMIC CHRCTERISTICS Turn-On Time t ON V IN = 1.5V to.5v, V X or V Y = 2.1V +25 17. Turn-Off Time R L= 5, C L = 35pF, Test Circuit 2 +25 9. ddress Transition Time reak-efore-make Time Delay t OFF t TRNS t D V IN = 4.2V to V, V X or V Y = 2.1V, R L = 5, C L = 35pF, Test Circuit 3 V IN = 4.2V to V, V X or V Y = 2.1V, R L = 5, C L = 35pF, Test Circuit 4 ns +25 17.2 ns +25 14. ns Charge Injection Q C L = 1nF, Test Circuit 5 +25-18 pc Off Isolation Channel-to-Channel Crosstalk -3d andwidth Channel ON Capacitance POWER REQUIREMENTS O ISO X TLK W C X_(ON), C Y_(ON), C X(ON), C Y(ON) Signal = dm, V IS = 2.1V, R L = 5, C L = 35pF, Test Circuit 6 Signal = dm, V IS = 2.1V, R L = 5, C L = 35pF, Test Circuit 6 Signal = dm, V IS = 2.1V, R L = 5, Test Circuit 6 1MHz +25-6 1MHz +25-4 1MHz +25-15 1MHz +25-92 d d +25 15 MHz +25 51.6 pf Power Supply Range -4 to +85 1.8 4.2 V Power Supply Current I + = 4.2V, V, V, V ENLE = 4.2V or V -4 to +85 1 μ 3
ELECTRICL CHRCTERISTICS ( = +2.7V to +3.6V, = V, V IH = +1.6V, V IL = +.4V, T = -4 to +85. Typical values are at = +3.V, T = +25, unless otherwise noted.) PRMETER SYMOL CONDITIONS TEMP MIN TYP MX UNITS NLOG SWITCH nalog Signal Range V X_, V Y_, V X, V Y -4 to +85 V On-Resistance R ON = 2.7V, I X_, I Y_ = -1m, +25 5 6 V X, V Y = 1V, Test Circuit 1-4 to +85 7 On-Resistance Match etween Channels R ON = 2.7V, I X_, I Y_ = -1m, +25.3 1 V X, V Y = 1V, Test Circuit 1-4 to +85 1.5 On-Resistance Flatness R FLT(ON) = 2.7V, I X_, I Y_ = -1m, +25 1.8 2.2 V X, V Y = 1V, 2.5V, Test Circuit 1-4 to +85 2.8 Source OFF Leakage Current I X_(OFF), I Y_(OFF) = 3.6V, V X_, V Y_ = 3.3V,.3V, V X,V Y =.3V, 3.3V -4 to +85 1 μ Channel ON Leakage Current DIGITL INPUTS I X_(ON), I Y_(ON), I X(ON), I Y(ON) = 3.6V, V X, V Y =.3V, 3.3V, V X_, V Y_ =.3V, 3.3V or floating -4 to +85 1 μ Input High Voltage V INH -4 to +85 1.5 V Input Low Voltage V INL -4 to +85.4 V Input Leakage Current I IN_ V, V = V ENLE = V or 2.7V -4 to +85 1 μ DYNMIC CHRCTERISTICS Turn-On Time t ON V IN = 1.5V to.5v, V X or V Y = 1.5V, +25 33. Turn-Off Time R L = 5, C L = 35pF, Test Circuit 2 +25 9. ddress Transition Time reak-efore-make Time Delay t OFF t TRNS t D V IN = 1.5V to V, V X or V Y = 1.5V, R L = 5, C L = 35pF, Test Circuit 3 V IN = 1.5V to V, V X or V Y = 1.5V, R L = 5, C L = 35pF, Test Circuit 4 ns +25 17.5 ns +25 14.5 ns Charge Injection Q C L = 1nF, Test Circuit 5 +25-18 pc Off Isolation O ISO Signal = dm, V IS = 1.5V, 1MHz +25-6 R L = 5, C L = 35pF, Test Circuit 6 1MHz +25-4 d Channel-to-Channel Crosstalk X TLK Signal = dm, V IS = 1.5V, 1MHz +25-15 R L = 5, C L = 35pF, Test Circuit 6 1MHz +25-92 d -3d andwidth Channel ON Capacitance W C X_(ON), C Y_(ON), C X(ON), C Y(ON) Signal = dm, V IS = 1.5V, R L = 5, Test Circuit 6 +25 15 MHz +25 51.6 pf 4
SGM84782 TYPICL PERFORMNCE CHRCTERISTICS On Response vs. Frequency On Response vs. Frequency On Response (d) 3-3 -6 = +4.2V T = +25 On Response (d) 3-3 -6 = +3V T = +25-9.1 1 1 1 1 Frequency (MHz) -9.1 1 1 1 1 Frequency (MHz) On Response (d) 2-2 -4-6 -8-1 -12-14 Response vs. Frequency OFF-ISOLTION CROSSTLK = +4.2V T = +25.1.1 1 1 1 1 Frequency (MHz) On Response (d) 2-2 -4-6 -8-1 -12-14 Response vs. Frequency OFF-ISOLTION CROSSTLK = +3V T = +25.1.1 1 1 1 1 Frequency (MHz) 5
TEST CIRCUITS 1m V1 X_ or Y_ V X_ or V Y_ R ON = V1/1m Test Circuit 1. On Resistance V ENLE ENLE X1,X2,X3, Y1,Y2,Y3 V ENLE V X V Y 5% 9% 9% 5 35pF t OFF t ON Test Circuit 2. Enable Switching Times (t ON, t OFF ) V,V ENLE X1,X2,X3, Y1,Y2,Y3 5 35pF V,V V X V Y 5% V X3 V Y3 t TRNS 1% 9% t TRNS Test Circuit 3. ddress Transition Times (t TRNS ) 6
TEST CIRCUITS (Cont.) V,V X-X3 V,V 5% Y-Y3 t R <5ns t F <5ns ENLE V X,V Y 9% 5 35pF t D Test Circuit 4. reak-efore-make Interval (t D) CHNNEL SELECT X_,Y_ V ENLE V ENLE ENLE C L 1pF Q =? C L Δ Test Circuit 5. Charge Injection (Q) CHNNEL SELECT 1nF X_,Y_ V IN NETWORK NLYZER 5 5 OFF-ISOLTION = 2log V IN ENLE MES. REF. 5 5 CROSSTLK = 2log VIN Test Circuit 6. -3d andwidth, Off-Isolation and Crosstalk 7
PCKGE OUTLINE DIMENSIONS TQFN-3 3-16L D e N16 L D1 N1 E E1 k b N5 TOP VIEW OTTOM VIEW 1.7.7 3.6 2.2 1.7 1 SIDE VIEW 2.5.24 RECOMMENDED LND PTTERN (Unit: mm) Dimensions In Millimeters Dimensions In Inches Symbol MIN MX MIN MX.7.8.28.31 1..5..2 2.23 REF.8 REF D 2.9 3.1.114.122 D1 1.6 1.8.63.71 E 2.9 3.1.114.122 E1 1.6 1.8.63.71 k.2 MIN.8 MIN b.18.3.7.12 e.5 TYP.2 TYP L.3.5.12.2 8
PCKGE OUTLINE DIMENSIONS TSSOP-16 D E1 E 5.94 1.78 e b.42.65 RECOMMENDED LND PTTERN (Unit: mm) L 1 2 θ H c Dimensions In Millimeters Dimensions In Inches Symbol MIN MX MIN MX 1.1.43 1.5.15.2.6 2.8 1..31.39 b.19.3.7.12 c.9.2.4.8 D 4.9 5.1.193.21 E 4.3 4.5.169.177 E1 6.25 6.55.246.258 e.65 SC.26 SC L.5.7.2.28 H.25 TYP.1 TYP θ 1 7 1 7 9
TPE ND REEL INFORMTION REEL DIMENSIONS TPE DIMENSIONS P2 P W Q1 Q2 Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 Q3 Q4 Reel Diameter P1 K Reel Width (W1) DIRECTION OF FEED NOTE: The picture is only for reference. Please make the object as the standard. KEY PRMETER LIST OF TPE ND REEL Package Type Reel Diameter Reel Width W1 K P P1 P2 W Pin1 Quadrant TQFN-3 3-16L 13 12.4 3.35 3.35 1.13 4. 4. 2. 12. Q1 TSSOP-16 13 12.4 6.9 5.6 1.2 4. 8. 2. 12. Q1 1
CRTON OX DIMENSIONS NOTE: The picture is only for reference. Please make the object as the standard. KEY PRMETER LIST OF CRTON OX Reel Type Length Width Height Pizza/Carton 13 386 28 37 5 11