OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS - V R DS(on) 55 mω I D -.58 SOT- VSO556 Type Package Ordering Code SOT- Q67-S7 Marking Xs Gate pin Drain pin Source pin Maximum Ratings,at T j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =5 C T =7 C Pulsed drain current I D puls -. T =5 C I D -.58 -.6 valanche energy, single pulse E S.5 mj I D =-.58, V DD =-V, R GS =5Ω Reverse diode dv/dt dv/dt -6 kv/µs I S =-.58, V DS =-6V, di/dt=/µs, T jmax =5 C Gate source voltage V GS ± V Power dissipation P tot.5 W T =5 C Operating and storage temperature T j, T stg -55... +5 C IEC climatic category; DIN IEC 68-55/5/56 Page --5
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R thjs - - K/W SMD version, device on PCB: @ min. footprint @ 6 cm cooling area ) R thj - - - - 6 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS - - - V V GS =V, I D =-5µ Gate threshold voltage, V GS = V DS V GS(th) -.6 -.9 -. I D =-.5µ Zero gate voltage drain current V DS =-V, V GS =, T j =5 C V DS =-V, V GS =, T j =5 C I DSS µ - - -. - - - Gate-source leakage current I GSS - - - n V GS =-V, V DS = Drain-source on-state resistance R DS(on) - 56 9 mω V GS =-.5V, I D =-.6 Drain-source on-state resistance R DS(on) - 69 55 V GS =-.5, I D =-.58 Device on mm*mm*.5mm epoxy PCB FR with 6cm (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air; t sec. Page --5
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS * I D *R DS(on)max.87.7 - S I D =-.6 Input capacitance C iss V GS =, V DS =-5V, - 89.9 - pf Output capacitance C oss f=mhz -. - Reverse transfer capacitance C rss -.5 - Turn-on delay time t d(on) V DD =-V, V GS =-.5V, -. 6.6 ns Rise time t r I D =-.58, R G =6Ω - 5.8 8.7 Turn-off delay time t d(off) - 7.6. Fall time t f -.5 6.7 Gate Charge Characteristics Gate to source charge Q gs V DD =-V, I D =-.58 - -. -.7 nc Gate to drain charge Q gd - -.7 -. Gate charge total Q g V DD =-V, I D =-.58, - -.9 -.8 V GS = to -.5V Gate plateau voltage V (plateau) V DD =-V, I D =-.58 - -.7 - V Reverse Diode Inverse diode continuous I S T =5 C - - -.5 forward current Inverse diode direct current, I SM - - -. pulsed Inverse diode forward voltage V SD V GS =, I F = I D - -. -.88 V Reverse recovery time t rr V R =-V, I F = l D, - 9. ns Reverse recovery charge Q rr di F /dt=/µs -.7.59 nc Page --5
Power dissipation P tot = f (T ) Drain current I D = f (T ) parameter: V GS.5 V.85 W.7 -.65 -.55 -.5.6 -.5 Ptot.5 ID -. -.5. -.. -.5 -.. -.5. -. -.5 6 8 C 6 T 6 8 C 6 T Safe operating area I D = f ( V DS ) parameter : D =, T = 5 C Transient thermal impedance Z thjs = f (t p ) parameter : D = t p /T - K/W ID - R DS(on) = V DS / I D t p = 8.µs µs ms ZthJS ms D =.5. - - -..5 DC - single pulse.. - - - - - - V - V DS Page - -7-6 -5 - - - s t p --5
5 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = 8 µs 6 Typ. drain-source on resistance R DS(on) = f (I D ) parameter: V GS Vgs = -.5V Vgs = -V Ω Vgs = -.V Vgs = -.5V - ID Vgs = -V Vgs = -.8V Vgs = -.5V RDS(on).8.7.6 Vgs = - V Vgs= -.5V Vgs = - V Vgs = -.5V Vgs= - 5V Vgs= - 6V Vgs = - 7V Vgs = -.5V Vgs = -7V Vgs = -.V.5 Vgs = -V. Vgs = -.8V. 5 6 7 8 V - V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = 8 µs 6....6.8...6 - I D 8 Typ. forward transconductance g fs = f(i D ); T j =5 C parameter: t p = 8 µs S 5.5 - ID.5 gfs.5.5.5.5.5.5.5.5.5 V.5 - V GS 6 - I D Page 5 --5
9 Drain-source on-resistance R DS(on) = f(t j ) parameter: I D = -.58, V GS = -.5 V 7 mω Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = -.5 µ. V RDS(on) 6 55 98% VGS(th) 98% 5.8 typ. 5.6. % 5 typ.. 5-6 - 6 C 6 T j -6-6 C 6 T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz Forward character. of reverse diode I F = f (V SD ) parameter: T j, tp = 8 µs - pf - C IF Ciss Coss Crss - - T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 5 V - V DS Page 6 - - -. -.8 -. -.6 - -. V - V SD --5
Typ. avalanche energy E S = f (T j ), par.: I D = -.58 V DD = - V, R GS = 5 Ω mj Typ. gate charge V GS = f (Q Gate ) parameter: I D = -.58 pulsed V 9 ES.5 - VGS 8 7 6. Vds max.5 Vds max.8 Vds max.5 5.5 5 5 75 C 5 T j.5.5 nc Q Gate 5 Drain-source breakdown voltage V (BR)DSS = f (T j ) -.5 V -.5 V(BR)DSS - -.5 - -.5 - -.5 - -9.5-9 -8.5-8 -6-6 C 8 T j Page 7 --5
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