Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

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Preliminary data. Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -0.

Transcription:

, PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collectoremitter saturation voltage Complementary types: BCX4, BSS64 (NPN) VPS6 Type Marking Pin Configuration Package DKs BMs = B = B = E = E = C = C SOT SOT Maximum Ratings Parameter Symbol Unit Collectoremitter voltage V CEO V Collectorbase voltage V CBO Emitterbase voltage V EBO DC collector current I C 8 ma Peak collector current I CM A Base current I B ma Peak base current I BM Total power dissipation, T S = 79 C P tot Junction temperature T j C Storage temperature T stg 6... Thermal Resistance Junction soldering point ) R thjs K/W For calculation of RthJA please refer to Application Note Thermal Resistance mw Jul

, Electrical Characteristics at T A = C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = ma, I B = Collectorbase breakdown voltage I C = µa, I B = Emitterbase breakdown voltage I E = µa, I C = Collector cutoff current V CB = 8 V, I E = V CB = V, I E = Collector cutoff current V CB = 8 V, I E =, T A = C V CB = V, I E =, T A = C Emitter cutoff current V EB = 4 V, I C = Collector cutoff current V CE = V, T A = 8 C V CE = V, T A = C DC current gain ) I C = µa, V CE = V I C = ma, V CE = V I C = ma, V CE = V I C = ma, V CE = V I C = ma, V CE = V V (BR)CEO V (BR)CBO V V (BR)EBO I CBO I CBO na µa I EBO na I CEO h FE µa 7 6 4 ) Pulse test: t µs, D = % Jul

, Electrical Characteristics at T A = C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter saturation voltage) I C = ma, I B = ma I C = ma, I B =. ma I C = 7 ma, I B = 7. ma Baseemitter saturation voltage ) I C = ma, I B = ma V CEsat V.9..9 V BEsat.4 AC Characteristics Transition frequency I C = ma, V CE = V, f = MHz Collectorbase capacitance V CB = V, f = MHz f T C cb MHz pf Jul

, Total power dissipation P tot = f(t S ) Collector current I C = f (V BE ) V CE = V 6 mw ma EHP49 Ι C 7 Ptot 4 8 T A = C C C 9 6 4 6 7 9 C T S V V BE Permissible pulse load P totmax / P totdc = f (t p ) Transition frequency f T = f (I C ) V CE = V P P tot max tot DC t p = D T t p T EHP4 f MHz T EHP4 D =....... 6 4 s t p ma 4 Jul

, Baseemitter saturation voltage I C = f (V BEsat ), h FE = Collectoremitter saturation voltage I C = f (V CEsat ), h FE = EHP4 EHP4 ma ma C C C C C C V V BE sat 4 6 mv 8 V CE sat Collector cutoff current I CBO = f (T A ) V CB = V DC current gain h FE = f (I C ) V CE = V na 4 EHP44 EHP4 B max h FE C C C typ C T A ma Jul

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