Small Signal Zener Diodes Features Saving space Hermetic sealed parts Electrical data identical with the devices BZT55..Series/TZM..Series Fits onto SOD-323/SOD- footprints Very sharp reverse characteristic Low reverse level Very high stability Low noise Available with tighter tolerances AEC-Q qualified Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC Halogen-free according to IEC 6249-2-2 definition Applications Voltage stabilization 96235 Mechanical Data Case: MicroMELF Weight: approx. 2 mg Packaging codes/options: TR/2.5 k per 7" reel, 2.5 k/box TR3/ k per 3" reel, k/box Absolute Maximum Ratings T amb = C, unless otherwise specified Parameter condition Symbol Value Unit Power dissipation R thja 3 K/W P V 5 mw Z- I Z P V /V Z ma Junction temperature T j 75 C Storage temperature range T stg - 65 to + 75 C Thermal Characteristics T amb = C, unless otherwise specified Parameter condition Symbol Value Unit Junction to ambient air Junction tie point Mounted on epoxy-glass hard tissue, fig. 35 µm copper clad,.9 mm 2 copper area per electrode R thja 5 K/W R thjl 3 K/W Electrical Characteristics T amb = C, unless otherwise specified Parameter condition Symbol Min. Typ. Max. Unit Forward voltage I F = 2 ma V F.5 V Rev. 2., 26-Aug- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics BZM55C.. Notes: ) t p ms, T/t p > Zener voltage range ) Dynamic resistance Temperature coefficient *) Additionnal measurement of voltage group 9V to 75 % at 95 % V zmin. 35 na at T j C Reverse leakage r zjt at r zjk at I R I R Part number V Z at I ZT I ZT, I ZK, I ZT TK VZ I ZK at T amb at T amb at V R f = khz f = khz = C = 5 C V Ω ma %/K ma µa V min. max. min. max. BZM55C2V4 2.28 2.56 < 85 < 6 5 -.9 -.6 < 5 < BZM55C2V7 2.5 2.9 < 85 < 6 5 -.9 -.6 < < 5 BZM55C3V 2.8 3.2 < 9 < 6 5 -.8 -.5 < 4 < 4 BZM55C3V3 3. 3.5 < 9 < 6 5 -.8 -.5 < 2 < 4 BZM55C3V6 3.4 3.8 < 9 < 6 5 -.8 -.5 < 2 < 4 BZM55C3V9 3.7 4. < 9 < 6 5 -.8 -.5 < 2 < 4 BZM55C4V3 4 4.6 < 9 < 6 5 -.6 -.3 < < 2 BZM55C4V7 4.4 5 < 8 < 6 5 -.5.2 <.5 < BZM55C5V 4.8 5.4 < 6 < 55 5 -.2.2 <. < 2 BZM55C5V6 5.2 6 < 4 < 45 5 -.5.5 <. < 2 BZM55C6V2 5.8 6.6 < < 2 5.3.6 <. < 2 2 BZM55C6V8 6.4 7.2 < 8 < 5 5.3.7 <. < 2 3 BZM55C7V5 7 7.9 < 7 < 5 5.3.7 <. < 2 5 BZM55C8V2 7.7 8.7 < 7 < 5 5.3.8 <. < 2 6.2 BZM55C9V * 8.5 9.6 < < 5 5.3.9 <. < 2 6.8 BZM55C * 9.4.6 < 5 < 7 5.3. <. < 2 7.5 BZM55C *.4.6 < 2 < 7 5.3. <. < 2 8.2 BZM55C2 *.4 2.7 < 2 < 9 5.3. <. < 2 9. BZM55C3 * 2.4 4. < 26 < 5.3. <. < 2 BZM55C5 * 3.8 5.6 < 3 < 5.3. <. < 2 BZM55C6 * 5.3 7. < 4 < 7 5.3. <. < 2 2 BZM55C8 * 6.8 9. < 5 < 7 5.3. <. < 2 3 BZM55C2 * 8.8 2.2 < 55 < 22 5.3. <. < 2 5 BZM55C22 * 2.8 23.3 < 55 < 22 5.4.2 <. < 2 6 BZM55C24 * 22.8.6 < 8 < 22 5.4.2 <. < 2 8 BZM55C27 *. 28.9 < 8 < 22 5.4.2 <. < 2 2 BZM55C3 * 28 32 < 8 < 22 5.4.2 <. < 2 22 BZM55C33 * 3 35 < 8 < 22 5.4.2 <. < 2 24 BZM55C36 * 34 38 < 8 < 22 5.4.2 <. < 2 27 BZM55C39 * 37 4 < 9 < 5 2.5.4.2.5 <. < 5 3 BZM55C43 * 4 46 < 9 < 6 2.5.4.2.5 <. < 5 33 BZM55C47 * 44 5 < 7 2.5.4.2.5 <. < 5 36 BZM55C5 * 48 54 < 7 2.5.4.2.5 <. < 39 BZM55C56 * 52 6 35 < 2.5.4.2.5 <. < 43 BZM55C62 * 58 66 5 < 2.5.4.2.5 <. < 47 BZM55C68 * 64 72 2 < 2.5.4.2.5 <. < 5 BZM55C75 * 7 79 < 5 2.5.4.2.5 <. < 56 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 2., 26-Aug-
Electrical Characteristics BZM55B.. Part number Notes: ) t p ms, T/t p > Zener voltage range ) V Z at I ZT Dynamic resistance r zjt at I ZT, f = khz r zjk at I ZK, f = khz Temperature coefficient *) Additionnal measurement of voltage group 9V to 75 % at 95 % V zmin. 35 na at T j C BZM55-Series I ZT TK VZ I ZK T amb = I R at C Reverse leakage I R at T amb = 5 C V Ω ma %/K ma µa V min. max. min. max. BZM55B2V4 2.35 2.45 < 85 < 6 5 -.9 -.6 < 5 < BZM55B2V7 2.64 2.76 < 85 < 6 5 -.9 -.6 < < 5 BZM55B3V 2.94 3.6 < 9 < 6 5 -.8 -.5 < 4 < 4 BZM55B3V3 3.24 3.36 < 9 < 6 5 -.8 -.5 < 2 < 4 BZM55B3V6 3.52 3.68 < 9 < 6 5 -.8 -.5 < 2 < 4 BZM55B3V9 3.82 3.98 < 9 < 6 5 -.8 -.5 < 2 < 4 BZM55B4V3 4.22 4.38 < 9 < 6 5 -.6 -.3 < < 2 BZM55B4V7 4.6 4.8 < 8 < 6 5 -.5.2 <.5 < BZM55B5V 5 5.2 < 6 < 55 5 -.2.2 <. < 2 BZM55B5V6 5.48 5.72 < 4 < 45 5 -.5.5 <. < 2 BZM55B6V2 6.8 6.32 < < 2 5.3.6 <. < 2 2 BZM55B6V8 6.66 6.94 < 8 < 5 5.3.7 <. < 2 3 BZM55B7V5 7.35 7.65 < 7 < 5 5.3.7 <. < 2 5 BZM55B8V2 8.4 8.36 < 7 < 5 5.3.8 <. < 2 6.2 BZM55B9V * 8.92 9.28 < < 5 5.3.9 <. < 2 6.8 BZM55B * 9.8.2 < 5 < 7 5.3. <. < 2 7.5 BZM55B *.78.22 < 2 < 7 5.3. <. < 2 8.2 BZM55B2 *.76 2.24 < 2 < 9 5.3. <. < 2 9. BZM55B3 * 2.74 3.26 < 26 < 5.3. <. < 2 BZM55B5 * 4.7 5.3 < 3 < 5.3. <. < 2 BZM55B6 * 5.7 6.3 < 4 < 7 5.3. <. < 2 2 BZM55B8 * 7.64 8.36 < 5 < 7 5.3. <. < 2 3 BZM55B2 * 9.6 2.4 < 55 < 22 5.3. <. < 2 5 BZM55B22 * 2.55 22.45 < 55 < 22 5.4.2 <. < 2 6 BZM55B24 * 23.5 24.5 < 8 < 22 5.4.2 <. < 2 8 BZM55B27 * 26.4 27.6 < 8 < 22 5.4.2 <. < 2 2 BZM55B3 * 29.4 3.6 < 8 < 22 5.4.2 <. < 2 22 BZM55B33 * 32.4 33.6 < 8 < 22 5.4.2 <. < 2 24 BZM55B36 * 35.3 36.7 < 8 < 22 5.4.2 <. < 2 27 BZM55B39 * 38.2 39.8 < 9 < 5 2.5.4.2 <. < 5 3 BZM55B43 * 42. 43.9 < 9 < 6 2.5.4.2.5 <. < 5 33 BZM55B47 * 46. 47.9 < < 7 2.5.4.2.5 <. < 5 36 BZM55B5 * 5 52. < < 7 2.5.4.2.5 <. < 39 BZM55B56 * 54.9 57. < 35 < 2.5.4.2.5 <. < 43 BZM55B62 * 6.8 63.2 < 5 < 2.5.4.2.5 <. < 47 BZM55B68 * 66.6 69.4 < 2 < 2.5.4.2.5 <. < 5 BZM55B75 * 73.5 76.5 < < 5 2.5.4.2.5 <. < 56 at V R Rev. 2., 26-Aug- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Typical Characteristics T amb = C, unless otherwise specified P tot - Total Power Dissipation (mw) 6 5 4 3 2 4 8 2 6 2 95 962 T amb - Ambient Temperature ( C) C D - Diode Capacitance (pf) 2 5 5 5 95 96 V R = 2 V T j = C 5 2 Figure. Total Power Dissipation vs. Ambient Temperature Figure 4. Diode Capacitance vs. Z-Voltage V Z - Voltage Change (mv) 95 9598 T j = C 5 I Z = 5 ma 5 2 Figure 2. Typical Change of Working Voltage under Operating Conditions at T amb = C V Ztn - Relative Voltage Change.3.2...9.8-6 6 2 8 95 9599 V Ztn = V Zt /V Z ( C) TK VZ = x -4 /K 8 x -4 /K 6 x -4 /K 4 x -4 /K 2 x -4 /K - 2 x -4 /K - 4 x -4 /K T j - Junction Temperature ( C) 24 Figure 5. Typical Change of Working Voltage vs. Junction Temperature 5 TK VZ - Temperature Coefficient of V Z ( -4 /K) 95 96 5 I Z = 5 ma - 5 2 3 4 5 I F - Forward Current (ma) T j = C....2.4.6.8 95 965 V F - Forward Voltage (V). Figure 3. Temperature Coefficient of Vz vs. Z-Voltage Figure 6. Forward Current vs. Forward Voltage 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 2., 26-Aug-
.7.3.27 I Z - Z-Current (ma) 8 6 4 2 P tot = 5 mw T amb = C.52.355 9.9 4 6 8 2 2 95 964 95 329 2.5 24 Figure 7. Z-Current vs. Z-Voltage Figure. Board for R thja Definition (in mm) 5 I Z - Z-Current (ma) 4 3 2 P tot = 5 mw T amb = C Reflow Soldering.2.8.8.8 95 967 5 2 3 35 6773 2.4 Figure 8. Z-Current vs. Z-Voltage Figure. Recommended Foot Pads (in mm) r Z - Differential Z-Resistance (Ω) I Z = ma 5 ma ma T j = C 5 5 2 95 966 Wave Soldering.4 6774.9..9 2.8 Figure 9. Differential Z-Resistance vs. Z-Voltage Figure 2. Recommended Foot Pads (in mm) Rev. 2., 26-Aug- DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
.6 (.24) surface plan BZM55-Series Z thp - Thermal Resistance for Pulse Cond. (KW) t p /T =.5 t p /T =.2 Single Pulse R thja = 3 K/W T = T jmax - T amb t p /T =. t p /T =. t p /T =.2 t p /T =.5 i ZM = (- V Z + (V 2 Z + 4r zj x T/Z thp ) /2 )/(2r zj ) - 2 t p - Pulse Length (ms) 95 963 Figure 3. Thermal Response Package Dimensions in millimeters (inches): MicroMELF Cathode indification (.39) surface plan glass <.35 (.53).2 (.47). (.43) * 2 (.79).8 (.7). (.).5 (.6) > R2.5 (.98) glass * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Reflow soldering Wave soldering 2.4 (.94) 2.8 (.).8 (.3).8 (.3).9 (.35).9 (.35).2 (.47).4 (.55).8 (.3) (.39) Created - Date: 26.July.996 Rev. 3 - Date: 7.June.26 Document no.:6.56-57.-4 96 272 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 2., 26-Aug-
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