Silicon Photodiode with Vλ Characteristic Version 1.2 SFH 2440

Similar documents
Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Version 1.7 BPW 34 BS

Silicon Photodiode with Vλ Characteristic Version 1.3 SFH 2430

Silicon PIN Photodiode Version 1.3 SFH 2200

Silicon Photodiode with Vλ Characteristic Version 1.2 SFH 2240

Silicon PIN Photodiode Version 1.5 BP 104 S

Silicon PIN Photodiode Preliminary Version 0.0 SFH DRAFT For Reference only. Subject to change without notice.

High Speed PIN Photodiode Version 1.2 SFH 2701

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3410R

Silicon PIN Photodiode Version 1.8 SFH 2400

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3410

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3710

Silicon PIN Photodiode with Daylight Filter; in SMT as Reverse Gullwing Version 1.5

Silicon PIN Photodiode with Daylight Blocking Filter Version 1.4 BPW 34 FSR

IR OSLUX (810nm) - 20 Version 1.1 SFH 4780S

Silicon NPN Phototransistor Version 1.4 SFH 3015 FA

OSLON Black Flat (IR broad band emitter) Version 1.0 SFH 4735

SFH 2200 TOPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon PIN Photodiode. Electronic Equipment

SFH DIL SMT Ambient Light Sensor. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2430

PLPVQ 940A. Preliminary For Reference only. Subject to change. VCSEL pulsed laser in small footprint QFN W pulsed power Preliminary Version 0.

SFH 2700 FA CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2700 FA. Silicon PIN Photodiode

High Power Infrared Emitter (940 nm) Version 1.4 SFH 4045N

BPW 34 BS DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BPW 34 BS

SFH 2716 CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon PIN Photodiode with Vλ Characteristics

High Power Infrared Emitter (850 nm) Version 1.5 SFH 4253 R

Infrared Emitter (850 nm) and Infrared Emitter (940 nm) Version 1.0 SFH 7252

High Power Infrared Emitter (850 nm) Version 1.9 SFH 4250S

OSLON Black Series (940 nm) - 90 Version 1.6 SFH 4725S

SFH 3716 CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 3716

Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Version 1.6 BPW 34 B

Infrared-Emitter (850 nm) and Si-Phototransistor Version 1.3 SFH 7250

BIOFY Sensor Version 1.1 SFH 7070

SMT Multi TOPLED Version 1.3 SFH 331-JK

OSLON Black Series (850 nm) - 80 Version 1.3/ acc. to OS-PCN A SFH 4713A

Narrow beam LED in MIDLED package (940 nm) Version 1.6 SFH 4646

Silicon PIN Photodiode Version 1.3 SFH 206 K

High Power Infrared Emitter (850 nm) Version 1.6/ OS-IN SFH 4258

BP 104 S DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BP 104 S. Silicon PIN Photodiode. LIDAR, Pre-Crash, ACC

Narrow beam LED in MIDLED package (940 nm) Version 1.6 / acc. to OS-PCN A SFH 4640

Silicon PIN Photodiode with very short switching time Version 1.3 SFH 229

BP 104 FS DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BP 104 FS

SFH 2400 FA. Smart DIL. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2400 FA. Silicon PIN Photodiode

OSLON Black Series (940 nm) - 80 Preliminary Version 0.0 SFH 4725AS A01. DRAFT For Reference only. Subject to change without notice.

Silicon PIN Photodiode Version 1.3 SFH 213

Silicon PIN Photodiode Version 1.4 BPW 34

Type Photocurrent Ordering Code V CE. = 0.01 mw/cm² I PCE

Silicon PIN Photodiode Version 1.3 BPX 65

SFH TOPLED Lens. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon NPN Phototransistor

OSLON Black Series (850 nm) - 90 Version 1.4 SFH 4715AS

Silicon PIN Photodiode with Daylight Filter Version 1.5 BPW 34 FA

High Power Infrared Emitter (850 nm) Version 1.0 SFH 4278S

Silicon PIN Photodiode Version 1.3 SFH 203 PFA

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

High Power Infrared Emitter (850 nm) Version 1.6 SFH 4232A

= 20 ms I F. = 20 ms E e. SFH mw/cm² 6 mw/cm² Q65111A2992 SFH 4056-NP mw/cm² 6 mw/cm² Q65111A9688

SFH Micro SIDELED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH High Power Infrared Emitter (850 nm)

SFH OSLON Black Flat. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4735

Silicon PIN Photodiode with integrated Temperature Sensor Version 1.4 SFH 2504

SFH 4776 SYNIOS P2720. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH IR broad band emitter

BIOFY Sensor Draft Version.3 SFH7072. Draft - This design is for Reference only. Subject to change without notice. DRAFT - For reference only.

Silicon Photodiode for the Visible Spectral Range Version 1.3 BPW 21

SFH 4646 MIDLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Narrow beam LED in MIDLED package (940 nm)

SFH 4716S. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4716S. OSLON Black Series (850 nm) - 150

Type Photocurrent Ordering Code V CE. = 0.1 mw/cm² I PCE

SFH 4714A. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4714A. OSLON Black Series (850 nm) - 150

GP PSLR31.14 DURIS S 5. Applications. Features: Produktdatenblatt Version 1.1. Architecture. Horticulture Lighting

SFH 4727AS A01. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4727AS A01

Silicon NPN Phototransistor Version 1.3 SFH 309

Infrared Emitter (850 nm) Version 1.3 SFH 4855

SFH 4232A. Golden DRAGON. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4232A. High Power Infrared Emitter (850 nm)

= 25 C Parameter Symbol Values. -40 C 100 C -40 C 100 C Forward current I F. max. 100 ma Surge current t p I FSM. max. 5 V Power consumption P tot

Infrared Emitter (850 nm) Version 1.2 SFH 4356P. Features: Wavelength 850nm Short switching time Good spectral match to silicon photodetectors

GW PSLR31.FM DURIS S 5. Applications. Features: Produktdatenblatt Version 1.1 GW PSLR31.FM. Horticulture Lighting

High Power Infrared Emitter (940 nm) Version 1.3 SFH Features: High Power Infrared LED Emission angle ± 11 High radiant intensity

High Power Infrared Emitter (940 nm) Version 1.4 SFH Features: High Power Infrared LED Short switching times

LS G6SP. Advanced Power TOPLED. Applications. Features: Produktdatenblatt Version 1.1 LS G6SP

KW DMLN32.SB SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KW DMLN32.SB

= 20 ms I e. = 20 ms I F

Applications For a variety of manufacturing and monitoring applications, which require beam interruption Photointerrupters

Infrared Emitter (850 nm) Version 1.4 SFH 4554

KW DPLS31.SB SYNIOS E4014. Applications. Features: Produktdatenblatt Version 1.1 KW DPLS31.SB

SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1. KR DMLS Dual Binning

Infrared Emitter (850 nm) Version 1.6 SFH 4550

Silicon NPN Phototransistor Version 1.3 BPX 38

GaAlAs Light Emitting Diode (660 nm) Version 1.3 SFH 464 E7800

LS B6SP. Power SIDELED. Applications. Features: Produktdatenblatt Version 1.1 LS B6SP

LG L29K SMARTLED Applications. Features: Produktdatenblatt Version 1.1 LG L29K

KS DMLN31.23 SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KS DMLN31.23

LUW CVBP.CE OSLON LX ECE. Applications. Features: Produktdatenblatt Version 1.1 LUW CVBP.CE. Custom Tuning Headlamps, LED & Laser & Night Vision

CW CBLPM4.PU. CERAMOS Gen 5. Applications. Features: Produktdatenblatt Version 1.1 CW CBLPM4.PU. Highly efficient lightsource, slim package design

LA G6SP - Dual binning

KW DMLQ31.SG SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KW DMLQ31.SG

SFH 203 PFA. Radial T1 3/4. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 203 PFA. Silicon PIN Photodiode

Ordering Information Type: Radiant Intensity Ordering Code I e [mw/sr] I F = 50 ma, t p = 20 ms SFH ( 0.63) Q62702P5053

SFH 213 FA. Radial T1 3/4. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 213 FA. Silicon PIN Photodiode

LR VH9F FIREFLY Applications. Features: Produktdatenblatt Version 1.1 LR VH9F

BP 104 F DIL. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BP 104 F

LCG H9RM. OSRAM OSTAR Projection Cube. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 LCG H9RM

LE R Q8WP. OSRAM OSTAR Projection Compact. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 LE R Q8WP

Transcription:

218-2-23 Silicon Photodiode with Vλ Characteristic Version 1.2 SFH 244 Features: Spectral sensitivity adapted to Human Eye Sensitivity (V λ ) Low temperature coefficient of spectral sensitivity High linearity DIL plastic package with high packing density Fast switching time Applications Ambient light sensor (Mobile phone, regulation of air conditioning) Bio Monitoring Ordering Information Type: Spectral sensitivity Ordering Code S [na/ix] V R = 5 V, standard light A, T = 2856 K SFH 244 9.4 Q65111A8524 218-2-23 1

Version 1.2 SFH 244 Maximum Ratings (T A = 25 C) Parameter Symbol Values Unit Operating and storage temperature range T op ; T stg -4... 1 C Reverse voltage V R 16 V Total Power dissipation P tot 15 mw ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-1 - HBM) Characteristics (T A = 25 C) V ESD 15 V Parameter Symbol Values Unit Spectral sensitivity (V R = 5 V, standard light A, T = 2856 K) (typ ) S 9.4 ( 7) na/ix Wavelength of max. sensitivity (typ) λ S max 62 nm Spectral range of sensitivity (typ) λ 1% (typ) 4... 69 Radiant sensitive area (typ) A 7.2 mm 2 Dimensions of radiant sensitive area (typ) L x W 2.65 x 2.65 mm x mm Half angle (typ) ϕ ± 6 Dark current (V R = 5 V) Spectral sensitivity of the chip (λ = 55 nm) Quantum yield of the chip (λ = 55 nm) Short-circuit current (E v = 1 lx, Std. Light A) Rise and fall time (V R = 5 V, R L = 5 Ω, λ = 55 nm) Forward voltage (I F = 1 ma, E = ) Capacitance (V R = V, f = 1 MHz, E = ) Noise equivalent power (V R = 5 V, λ = 55 nm) nm (typ (max)) I R 1 ( 1) na (typ) S λ typ.37 A / W (typ) η.83 Electro ns /Photon (typ) I SC 8.1 µa (typ) t r, t f.9 µs (typ) V F 1 V (typ) C 135 pf (typ) NEP.48 pw / Hz ½ Detection limit (typ) D * 5.5e12 cm x Hz ½ / W 218-2-23 2

Version 1.2 SFH 244 Relative Spectral Sensitivity S rel = f(λ) S rel 1 % 8 7 1) page 11 OHF5712 1) page 11 Photocurrent IP/IP(25 C) = f (TA) Ev = 1 lx, VR = 5 V 11 I % P IP (25 C) 15 OHF5713 6 5 1 4 3 2 95 1 4 Power Consumption P tot = f(t A ) P tot 16 mw 5 6 7 8 9 nm 11 λ OHF5583 Dark Current I R = f(v R ), E = I R 1.6 na 9-4 -2 2 4 6 C 1 1) page 11 T A OHF5714 12 T A T S 1.2 1 8.8 6 4.4 2 T A T S temp. ambient temp. solder point 25 5 75 C 1 2 4 6 8 1 12 V 16 T A V R 218-2-23 3

Version 1.2 SFH 244 1) page 11 Capacitance C = f(v R ), f = 1 MHz, E = 14 C pf 12 1 8 6 4 2 1-3 1-2 1-1 1 1 1 V V R Directional Characteristics S rel = f(ϕ) 1) page 11 4 3 2 1 ϕ 1. OHF142 5.8 6.6 7.4 8.2 9 1 1..8.6.4 2 4 6 8 1 12 218-2-23 4

Version 1.2 SFH 244 Package Outline Dimensions in mm. Package SMT DIL, Epoxy Approximate Weight: 43 mg 218-2-23 5

Version 1.2 SFH 244 Recommended Solder Pad Dimensions in mm. Reflow Soldering Profile Product complies to MSL Level 4 acc. to JEDEC J-STD-2E 3 C T 25 2 24 C 217 C t P t L T p OHA4525 245 C 15 t S 1 5 25 C 5 1 15 2 25 s 3 t 218-2-23 6

Version 1.2 SFH 244 Profile Feature Profil-Charakteristik Ramp-up rate to preheat* ) 25 C to 15 C Time t S T Smin to T Smax Ramp-up rate to peak* ) T Smax to T P Liquidus temperature Time above liquidus temperature Symbol Symbol t S T L t L Minimum 6 Pb-Free (SnAgCu) Assembly Recommendation 2 3 K/s 1 12 2 3 217 Maximum 8 1 OHA4612 Unit Einheit s K/s C s Peak temperature Time within 5 C of the specified peak temperature T P - 5 K Ramp-down rate* T P to 1 C Time 25 C to T P T P t P 245 26 1 2 3 All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range 3 6 48 C s K/s s Taping Dimensions in mm. 218-2-23 7

Version 1.2 SFH 244 Tape and Reel 12 mm tape with 15 pcs. on 18 mm reel W 1 D P P 2 F E W A N 13. ±.25 P 1 Label Direction of unreeling W 2 Direction of unreeling Leader: min. 4 mm * Trailer: min. 16 mm * *) Dimensions acc. to IEC 6286-3; EIA 481-D OHAY324 Tape dimensions [mm] Tape dimensions in mm W P P 1 P 2 D E F 12 +.3 / -.1 4 ±.1 4 ±.1 or 8 ±.1 2 ±.5 1.5 ±.1 1.75 ±.1 5.5 ±.5 Reel dimensions [mm] Reel dimensions in mm A W N min W 1 W 2max 18 12 6 12.4 + 2 18.4 Barcode-Product-Label (BPL) 218-2-23 8

_< C). _< _< C). 11 _< 144 Bin2: Q-1-2 Bin3: ML 2 2a 22 C R WET Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. Do not eat. Version 1.2 SFH 244 Dry Packing Process and Materials OSRAM Moisture-sensitive label or print Barcode label Humidity indicator Barcode label Comparator check dot 5% 1% 15% If wet, parts still adequately dry. change desiccant If wet, examine units, if necessary bake units If wet, examine units, if necessary bake units 11 (9D) D/C: 144 Bin2: Q-1-2 Bin3: ML Temp ST 2 22 C R 2a CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS LEVEL If blank, see bar code label 1. Shelf life in sealed bag: 24 months at < 4 C and < 9% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 3 C/6% RH. Floor time see below b) Stored at 1% RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 1% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-33 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours Desiccant Humidity Indicator MIL-I-8835 OSRAM OHA539 Note: Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card. Regarding dry pack you will find further information in the internet. Here you will also find the normative references like JEDEC. Transportation Packing and Materials Barcode label Barcode label CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS LEVEL If blank, see bar code label 1. Shelf life in sealed bag: 24 months at < 4 C and < 9% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 3 C/6% RH. Floor time see below b) Stored at 1% RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 1% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-33 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours OSRAM Opto Semiconductors (6P) BATCH NO: 2121998 (1T) LOT NO: 123GH1234 Muster (X) PROD NO: 1 (9D) D/C: 425 (Q)QTY: 2 LSY T676 Bin1: P-1-2 Multi TOPLED Temp ST 24 C R 3 26 C RT Additional TEXT R77 DEMY PACKVAR: R18 (G) GROUP: P-1+Q-1 OSRAM Opto Semiconductors (6P) BATCH NO: 2121998 (1T) LOT NO: 123GH1234 Muster (X) PROD NO: 1 425 (Q)QTY: 2 LSY T676 Bin1: P-1-2 Multi TOPLED 24 C R 3 26 C RT Additional TEXT R77 DEMY PACKVAR: R18 (G) GROUP: P-1+Q-1 OSRAM Packing Sealing label OHA244 Dimensions of transportation box in mm Width Length Height 195 ± 5 195 ± 5 3 ± 5 218-2-23 9

Version 1.2 SFH 244 Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. 218-2-23 1

Version 1.2 SFH 244 Glossary 1) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 218-2-23 11

Version 1.2 SFH 244 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-9355 Regensburg www.osram-os.com All Rights Reserved. 218-2-23 12