Simple calibration for ceramic sensing elements using an ME651

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Simple calibration for ceramic sensing elements using an ME651 This article describes in detail a simple electronic circuit based on a suitable IC and few external components to amplify and to calibrate the offset- and fullspan-signal of ceramic sensing elements. The aim is to create a ready-tomount sensor system with a ratiometric output signal and a suitable level of precision without a temperature compensation. Sensor system (ME651 and AM457) In the example application described here a monolithic ME651 ceramic resistive pressure measurement cell [1] with a thick-film resistance Wheatstone bridge is used as a sensing element (see Figure 1). The pressure range is 2bar, gage and bridge resistance is specified as being 10kΩ and the supply voltage is set to 5V. The example is not fixed in the ME651, it is applicably to all ceramic sensing elements. Figure 1: Ceramic sensing element ME651 In order to be able to amplify and to calibrate the offset and span of the sensing element a simple network was developed using the high-precision amplifier AM457 from Analog Microelectronics in Mainz, Germany (see Figure 2). The whole signal conditioning circuit consists of the ceramic sensing element, the integrated circuit AM457, also 4 resistors and a minimum of 2 capacitors (see the AM457 data sheet [2]). The AM457 IC is used as a ratiometric amplifier to convert the ME651 output signal from ca. 10mVFS to an output signal of 4.5V. The zero point value is 0,5V and the full scale signal is 4,5V. The electronic components were able to be mounted on a round printed board (Ø 14mm) which was adapted to correspond to the assembly guidelines for the ceramic sensing element. Using the components listed above a compact module was developed which is hereinafter referred to as the sensor system. This system can be mounted onto a package whose proportions are given on the AMSYS website. Page 1/8

C 2 AM457 7 OUTOP OP 1k 9k V CC VCC 8 C 5 V =5V CC R 3 Ceramic sensing element C 6 C 4 IN+ 3 IN- 2 INOP 6 AMP Diagnosis DIAG 5 Temp OUT 1 GND 4 C 1 V DIAG V OUT GND Figure 2: Circuit for the signal conditioning of the ceramic sensing element ME651 using the AM457 amplifier IC Dimensioning The circuit can be dimensioned with the aid of formulae (1) to (3). These are calculated using a model which is based on the classic Wheatstone bridge circuit of four resistors. These three simple equations allow us to calibrate the system with a minimum of data pertinent to the sensing element. The formulae used are: R 2 2 R B 5 d RS (kω) Span adjustment (1) 100 (kω) Auxiliary resistor (2) R 3 8 d RO d RS 8 d R O 9 d RS (kω) Zero point adjustment (3) whereby the following applies to the individual sensing elements: R B Bridge resistance in ohms d RS Span/supply voltage in mv/v d RO Offset/supply voltage in mv/v Page 2/8

In order to calculate the discrete adjusting resistors the offset, span and bridge resistance of the sensing element to be calibrated are first determined at room temperature and a supply voltage of 5V. The sensing element is then connected up to an AM457 to form the circuit illustrated in Figure 2. Resistors to are dimensioned according to the given formulae. The values of the capacitors are selected according to Table 1. Name Value Notes C 1 1nF C 2 100pF C 3 3.3nF Optional C 4 1nF Optional C 5 100nF Optional C 6 470pF Optional Table 1: Capacitor values Using the calculated resistances the zero point U FP1 and the full scale signal U FS1 are now set with a good precision for a sensing element with a four resistors Wheaststone bridge. As standard ceramic sensing elements have extra resistors in addition to the four bridge resistors there is a discrepancy between the model and the sensing element, demonstrated by the fact that the zero point U FP1 and the full scale signal U FS1 do not yet match the setpoint. They should thus be treated as approximations. This discrepancy is accounted for in the calibration procedure described in the following by correcting the discrete adjusting resistors. The obtained zero point value U FP1 is corrected to the target value of U FP2 = 0.5V by trimming resistor R 3 (e.g. potentiometer). As the zero point- and full-scale signal are dependent in a linear correlation, when the offset is adjusted the full-scale signal also changes to the value U FS2. So that this value can be corrected the relevant span resistors and R 2 must then be adjusted. As the given formulae designate linear functions, these resistors can simply be corrected to the obtained full-scale value of U FS2 using the ratio Target(Full-scale)Value U SOLL, whereby the circuit is now set. Dimensioning example 1. Determining the offset, span and bridge resistance of the ceramic sensing element The measurement results of the sensing element are: Offset (0 bars) = -0.096mV FS (2 bars) = +11.53mV Span = +11.63mV = +10.56kΩ R B Page 3/8

2. Calculating d RO and d RS d RO = Offset/5V d RS = Span/5V = -0.019mV/V = +2.33mV/V 3. Dimensioning resistors, R 2, R 3 and Dimensioning the span resistors according to Formula (1): R 2 2 R B 5 d RS = 1.81MΩ According to Formula (2) auxiliary resistor is calculated as follows: 100 = 18.1kΩ Dimensioning offset resistor R 3 according to Formula (3): 8 d R RO d RS 3 8 d R O 9 d = 2.17kΩ RS NB: Discrepancies between the setpoint value and the theoretical value enter the offset error proportionally. It is thus recommended that the resistors are partitioned as graded series resistors. With the real resistors = R 2 = 1.81MΩ, R3 = 2.17kΩ and = 18.18 kω the following measurement values are obtained for the sensor system: P MIN1 (0 bars) U FP1 = 0.70V P MAX1 (2 bars) U FS1 = 4.48V 4. Correcting the resistances of resistors, R 2, R 3 and Looking at these values we can see that the zero point value U FP1 for P = 0 bars is ca. 40% too high with regard to the setpoint of 0.5V; this is down to the discrepancy between the model and the actual resistor structure of the ceramic sensing element. The next step in the process is thus to adjust offset U FP2 for P = 0 to the setpoint by trimming the resistance of R 3. In the given example the value U FP2 = 0.5V has been set using R 3,KORR = 1.2kΩ. Page 4/8

Measurement values for P = 0 and P = 2 bars after trimming R 3 to U OFF2 = 0.5V: P MIN2 (0 bars) U FP2 = 0.50 V P MAX2 (2 bars) U FS2 = 4.28 V Due to the linear dependency of the zero point offset and full scale signal in the network developed here U FS changes by the same amount as U FP. For production purposes this means that the value P MAX2 (pressure measurement) no longer has to be measured. As the correlations are linear, resistors and R 2 can also be corrected linearly. Calculating the X FS correction factor for resistors and R 2 : X FS U FS, SOLL 4.5V = = = 1.05 U 4.28V FS 2 Calculating the new corrected values for and R 2 :,KORR R 2,KORR 2 R B 5 d RS X FS = 1.90MΩ Measuring the new calibrated U FS,KAL voltage with corrected resistances,korr and R 2,KORR : P MIN2 (0 bar) U FP2 = 0.493V P MAX2 (2 bar) U FS,KAL = 4.468V Calibration errors: Zero point error: 0.493V 0.5V = -0.007V which is equivalent to 0.16%FS Full scale error: 4.468V 4.5V = -0.032V which is equivalent to 0.71%FS Page 5/8

Measurements The sensor system compensated for using corrected resistors, R 2, R 3 and was characterized with regard to pressure and temperature. Figure 3 gives the output signal and its dependency on the applied pressure at T R and V cc = 5V. VOUT/[V] 4.5 2bar / 4.468V 3.5 2.5 1.5 0.5 0bar / 0.493V 0 0.5 1.0 1.5 2.0 p/[bar] Figure 3: Output of the sensor system (AM457+ME651) dependant of the applied pressure at T = 25 C Using 1ppm/K resistors the zero point and the full scale voltage of the sensor system were measured for the industrial temperature range. 0,56 0,55 Zero pointvoltage of the ME651 + AM457 system dependenton the temperature atp=0bar 0,54 0,53 0,52 V Zero point [V] 0,51 0,50 0,49 0,48 0,47 0,46 0,45 0,44-40 -30-20 -10 0 10 20 30 40 50 60 70 80 90 100 Temperature [ªC] Figure 4: Temperature drift of the zero point voltage at the system output Page 6/8

4,70 Full-scale voltage of the ME651 + AM457 system dependent on the temperature at P=2bar 4,65 4,60 4,55 V FULLSCALE [V] 4,50 4,45 4,40 4,35 4,30-40 -30-20 -10 0 10 20 30 40 50 60 70 80 90 100 Temperature [ C] Figure 5: Temperature drift of the full scale voltage at the system output With a non-selected sensing element an zero point temperature drift of 0.004%FS/K and a full scale temperature drift of 0.02%FS/K was determined at the system output. This example deliberately refrains from compensating for the temperature coefficients of the zero point (TCO S ) and full scale (TCS S ) of the sensor system. The reason for this lies in the fact that calibrating temperature at system level is time-consuming and expensive; the level of accuracy achieved is usually sufficient for most applications without temperature compensation. With regard to the system the primary temperature errors are the TCO and TCS of the sensing element. With its excellent temperature behavior IC AM457's contribution to the temperature error is marginal. Even if no compensation for temperature is necessary, the temperature drift of the adjusting resistors, which directly affects the TCO S and the TCS S, should nevertheless be taken into consideration. For this reason it is recommended that resistors with a suitable temperature coefficient are used. Should the achieved accuracy of temperature not be sufficient, both the TCO and TCS of the sensing element can be calibrated by the manufacturer. Page 7/8

Conclusion The given example illustrates how a ceramic sensing element was calibrated using an AM457 and some discrete resistor components. It was possible to determine the necessary resistances by making just one single iteration. The suggested calibration method using discrete resistors is suitable and has a sufficient accuracy for all ceramic sensing elements which permit calibration with resistors which have an output signal of ±5mVFS ±100mV FS where the span signal is greater than the offset. AM457's diagnostic unit was not used in this example; it can be applied without change of the presented results. Further reading http://www.amsys.de/ http://www.analogmicro.de/ [1] The ME651 data sheet [2] The AM457 data sheet Page 8/8