SiC Power Module BSM8D2P3C7 Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 98(N.C) 3,4 Features ) Low surge, low switching loss. 6 7(N.C) *Do not connnect to NC pin. 2 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 7 6 9 8 3 2 (M2.6 FOR SELF-TAPPING SCREW) 2 ROHM Co., Ltd. All rights reserved. / 28.4 - Rev.E
BSM8D2P3C7 Absolute maximum ratings (T j = 2 C) Drain current * Parameter Drain-source voltage Gate-source voltage( ) Gate-source voltage( ) Symbol V DSS I D G-S short DC (T c =6 C) I DRM Pulse (T c =6 C) ms * 2 I S DC (T c =6 C) V GS =8V Source current * Pulse (T 36 I c =6 C) ms V GS =8V * 2 SRM Pulse (T c =6 C) s V GS =V * 2 36 Total power disspation * 3 Ptot T c =2 C 88 W Max Junction Temperature Junction temperature Storage temperature T jmax T jop T stg 7 4 to 4 to2 C Isolation voltage * 4 Visol Terminals to baseplate, f=6hz AC min. 2 Vrms Mounting torque V GSS D-S short Conditions Main Terminals : M6 screw Mounting to heat shink : M screw (*) Case temperature (T c ) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T j is less than 7 C Limit 2 22 4 8 36 8 4. 3. Unit V A N m 2 ROHM Co., Ltd. All rights reserved. 2/ 28.4 - Rev.E
BSM8D2P3C7 Electrical characteristics (T j =2 C) Parameter Static drain-source on-state voltage Symbol Conditions Min. Typ. Max. Unit T j =2 C -.8 2.6 V DS(on) I C =8A, V GS =8V V T j =2 C - 2.7 - T j = C - 3. 4 Drain cutoff current I DSS V DS =2V, V GS =V - - 2 ma T j =2 C - 2. 2.6 V GS =V, I S =8A T j =2 C 2.6 - Source-drain voltage V SD T j = C - 2.8 4.3 T j =2 C -.4 - V V GS =8V, I S =8A T j =2 C.9 T j = C - 2 - Gate-source threshold voltage V GS(th) V DS =V, I D =ma 2.7 -.6 V V GS =22V, V DS =V - -. Gate-source leakage current I GSS V GS = 6V, V DS =V. - - A t d(on) V GS(on) =8V, * 4 - - t r - 7 - Switching characteristics t rr I D =8A - 3 - ns t d(off) R G(on) =8.2, R G(off) =4.7-6 - t f inductive load - - Input capacitance Ciss V DS =V, V GS =V,2kHz - 9 - nf Gate Registance R Gint T j =2 C -.4 - Stray Inductance Ls 2. - nh Creepage Distance Clearance Distance Junction-to-case thermal resistance Case-to-heat sink Thermal resistance - - Terminal to heat sink Terminal to heat sink. 9. - - mm mm Terminal to terminal Terminal to terminal 9. 3. - - mm mm R th (j-c) UMOSFET (/2 module) * - -.7 SBD (/2 module) * - -.2 C/W Case to heat sink, per module, R th (c-f) Thermal grease applied * 6 -.3 - C/W (*4) In order to prevent self turn-on, it is recommended to apply negative gate bias. (*) Measurement of Tc is to be done at the point just under the chip. (*6) Typical value is measured by using thermally conductive grease of λ=.9w/(m K). Eon=Id Vds (*7) SiC devices have lower short cuicuit trr withstand capability due to high current density. Please be advised to pay careful attention VDS 9% to short cuicuit accident and try to adjust protection time to shutdown them % as short as possible. 2% 2% ID (*8) If the Product is used beyond absolute maximum ratings defined in the Specifications, as its internal % VGS structure may be dameged, please replace td(on) tr such Product with a new one. <Wavelength for Switching Test> 9% % % 2% 9% td(off) Eoff=Id Vds tf 2% Vsurge 2 ROHM Co., Ltd. All rights reserved. 3/ 28.4 - Rev.E
BSM8D2P3C7 Fig. Typical Output Characteristics [ T j =2ºC ] 36 V GS =8V 3 V GS =2V V GS =6V V GS =4V 24 8 V GS =2V 2 6 V GS =V Drain-Source Voltage : V DS Fig.2 Drain-Source Voltage vs. Drain Current [ T j =2ºC ] 8 V GS =8V 7 6 T j =ºC 4 T j =2ºC 3 2 T j =2ºC 2 4 6 8 6 2 8 24 3 36 Drain-Source Voltage : V DS Drain-Source Voltage : V DS Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ T j =2ºC ] 4 3 2 T j =2ºC I D =8A I D =2A I D =9A I D =6A 2 4 6 8 2 22 24 Static Drain - Source On-State Resistance : R DS(on) [m ] Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature 3 2 2 I D =8A V GS =2V V GS =8V V GS =6V V GS =2V V GS =4V 2 2 Gate-Source Voltage : V GS Junction Temperature : T j [ºC] 2 ROHM Co., Ltd. All rights reserved. 4/ 28.4 - Rev.E
BSM8D2P3C7 Fig. Forward characteristic of Diode Fig.6 Forward characteristic of Diode T j =2ºC T j=2ºc T j=ºc 36 3 T j =ºC T j =2ºC Source Current : Is T j =2ºC T j =2ºC V GS =V V GS =8V T j =ºC 2 3 4 Source Current : Is 24 8 2 6 T j =2ºC T j =2ºC T j =ºC T j =2ºC V GS =V V GS =8V 2 3 4 Source-Drain Voltage : V SD Source-Drain Voltage : V SD Fig.7 Drain Current vs. Gate-Source Voltage Fig.8 Drain Current vs. Gate-Source Voltage 36 3 24 8 2 6 V DS =2V T j =ºC T j =2ºC T j =2ºC.E+3.E+2.E+.E+.E-.E-2.E-3 V DS =2V T j =ºC T j =2ºC T j =2ºC.E-4 Gate-Source Voltage : V GS Gate-Source Voltage : V GS 2 ROHM Co., Ltd. All rights reserved. / 28.4 - Rev.E
BSM8D2P3C7 Fig.9 Switching Characteristics [ T j =2ºC ] Fig. Switching Characteristics [ T j =2ºC ] t d(off) t d(off) Switching Time : t [ns] tf t d(on) V GS(on) =8V R G(on) =8.2 R G(off) =4.7 2 3 4 t r Switching Time : t [ns] t f t d(on) V GS(on) =8V R G(on) =8.2 R G(off) =4.7 2 3 4 t r Switching Time : t [ns] Fig. Switching Characteristics [ T j =ºC ] t f t d(on) V GS(on) =8V t d(off) R G(on) =8.2 R G(off) =4.7 2 3 4 t r Switching Loss [mj] Fig.2 Switching Loss vs. Drain Current [ T j =2ºC ] 2 2 V GS(on) =8V R G(on) =8.2 R G(off) =4.7 E on E off E rr 2 3 4 2 ROHM Co., Ltd. All rights reserved. 6/ 28.4 - Rev.E
BSM8D2P3C7 Switching Loss [mj] Fig.3 Switching Loss vs. Drain Current [ T j =2ºC ] 2 2 V GS(on) =8V R G(on) =8.2 R G(off) =4.7 E on E off Fig.4 Switching Loss vs. Drain Current [ T j =ºC ] Switching Loss [mj] 2 2 V GS(on) =8V R G(on) =8.2 R G(off) =4.7 E on E off E rr 2 3 4 E rr 2 3 4 Fig. Recovery Characteristics vs. Drain Current [ T j =2ºC ] Fig.6 Recovery Characteristics vs. Drain Current [ T j =2ºC ] Recovery Time : t rr [ns] V GS(on) =8V R G =8.2 2 3 4 t rr I rr Recovery Current : I rr Recovery Time : t rr [ns] V GS(on) =8V R G =8.2 2 3 4 I rr t rr Recovery Current : I rr 2 ROHM Co., Ltd. All rights reserved. 7/ 28.4 - Rev.E
BSM8D2P3C7 Fig.7 Recovery Characteristics vs. Drain Current [ T j =ºC ] Recovery Time : t rr [ns] V GS(on) =8V R G =8.2 2 3 4 I rr t rr Recovery Current : I rr Fig.8 Switching Characteristics vs. Gate Resistance [ T j =2ºC ] Switching Time : t [ns] I D =8A V GS(on) =8V t r t d(off) t d(on) t f Gate Resistance : R G [ ] Switching Time : t [ns] Fig.9 Switching Characteristics vs. Gate Resistance [ T j =2ºC ] I D =8A V GS(on) =8V t d(on) t d(off) t r t f Switching Time : t [ns] Fig.2 Switching Characteristics vs. Gate Resistance [ T j =ºC ] I D =8A V GS(on) =8V t r t d(off) t f t d(on) Gate Resistance : R G [ ] Gate Resistance : R G [ ] 2 ROHM Co., Ltd. All rights reserved. 8/ 28.4 - Rev.E
BSM8D2P3C7 Switching Loss [mj] Fig.2 Switching Loss vs. Gate Resistance [ T j =2ºC ] 3 2 2 I D =8A V GS(on) =8V E on E off Switching Loss [mj] 3 2 2 Fig.22 Switching Loss vs. Gate Resistance [ T j =2ºC ] I D =8A V GS(on) =8V E on E off E rr E rr Gate Resistance : R G [ ] Gate Resistance : R G [ ] Switching Loss [mj] Fig.23 Switching Loss vs. Gate Resistance [ T j =ºC ] 3 2 2 I D =8A V GS(on) =8V E on E rr E off Capasitance : C [F] Fig.24 Typical Capacitance vs. Drain-Source Voltage.E-7.E-8.E-9 T j =2ºC V GS =V 2kHz Crss Ciss Coss.E-.. Gate Resistance : R G [ ] Drain-Source Voltage : V DS 2 ROHM Co., Ltd. All rights reserved. 9/ 28.4 - Rev.E
BSM8D2P3C7 Gate-Source Voltage : V GS Fig.2 Gate Charge Characteristics [ T j =2ºC ] 2 2 - - V D =8A T j =2ºC 2 4 6 8 Normalized Transient Thermal Impedance : Zth Fig.26 Normalized Transient Thermal Impedance. Single Pulse T C =2ºC Per unit base UMOS part :.7K/W SBD part :.2K/W.... Total Gate charge : Qg [nc] Time [s] 2 ROHM Co., Ltd. All rights reserved. / 28.4 - Rev.E
Notice Notes ) 2) 3) 4) ) 6) 7) 8) 9) ) ) 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications. Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/
BSM8D2P3C7 - Web Page Distribution Inventory Part Number BSM8D2P3C7 Package C Unit Quantity 2 Minimum Package Quantity 2 Packing Type Tray Constitution Materials List inquiry RoHS Yes