TrenchMV TM Power MOSFET Preliminary Technical Information IXTPN7T IXTYN7T S = 7 V I D = A R DS(on) 9. mω N-Channel Enhancement Mode Avalanche Rated TO-22 (IXTP) G D S D (TAB) Symbol Test Conditions Maximum Ratings S = C to 7 C 7 V V DGR = C to 7 C; R GS = MΩ 7 V M Transient ± 2 V I D = C A I L Package Current Limit, RMS TO-2 A I DM = C, pulse width limited by M A I AR = C A E AS = C 2 mj dv/dt I S I DM, di/dt A/μs, V DD S 3 V/ns 7 C, R G =8 Ω P D = C W -... +7 C M 7 C T stg -... +7 C T L.6 mm (.62 in.) from case for s C T SOLD Plastic body for seconds 26 C M d Mounting torque (TO-22).3 / Nm/lb.in. Weight TO-22 3 g TO-2. g Symbol Test Conditions Characteristic Values ( = C unless otherwise specified) Min. Typ. Max. BS = V = 2 μa 7 V (th) = = μa 2. 4. V I GSS = ± 2 V, = V ± na TO-2 (IXTY) G G = Gate S = Source S D = Drain TAB = Drain D (TAB) Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 7 C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 4 Systems High Current Switching Applications I DSS = S μa = V = C μa R DS(on) = V =. I D, Notes, 2 9. mω 26 IXYS CORPORATION All rights reserved DS9963 (/6)
IXTPN7T IXTYN7T Symbol Test Conditions Characteristic Values ( = C unless otherwise specified) Min. Typ. Max. TO-22 (IXTP) Outline g fs = V; I D =. I D, Note 6 27 S C iss pf C oss = V, = V, f = MHz 2 pf C rss 23 pf t d(on) 2 ns t r = V, =. S = A ns t d(off) R G = 8 Ω (External) 44 ns t f 4 ns Q g(on) 33 nc Q gs = V, =. S = A nc Q gd 9 nc Pins: - Gate 2 - Drain 3 - Source 4, TAB - Drain R thjc. C/W R thcs TO-22. C/W Source-Drain Diode Symbol Test Conditions Characteristic Values = C unless otherwise specified) Min. Typ. Max. I S = V A I SM Repetitive A V SD I F = A, = V, Note.2 V t rr I F = A, -di/dt = A/μs ns V R = V, = V Notes:. Pulse test: t μs, duty cycle d 2 %; 2. On through-hole packages, R DS(on) Kelvin test contact location must be mm or less from the package body. TO-2 (IXTY) Outline Anode 2 NC 3 Anode 4 Cathode Dim. Millimeter Inches Min. Max. Min. Max. A 2.9 2..86.94 A.89.4.. A2.3. b.64.89.. b.76.4.. b2.2.46..2 c.46.8.8.23 c.46.8.8.23 D.97 6.22.2.2 D 4..2.7. E 6. 6.73.2.26 E 4..2.7. e 2.28 BSC.9 BSC e 4.7 BSC.8 BSC H 9...37.4 L..2.2. L.64.2.. L2.89.27.. L3 2.4 2.92.. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,8,92 4,93,844,49,96,237,48 6,62,66 6,4,6 B 6,683,4 6,727,8 7,,7 B2 one or moreof the following U.S. patents: 4,8,72,7,8,63,7,, 6,9,23 B 6,,3 6,7,B2 6,79,692 7,63,97 B2 4,88,6,,796,87,7,486,7 6,6,728 B 6,83, 6,7,463 677478 B2 7,7,37
IXTPN7T IXTYN7T Fig.. Output Characteristics @ ºC = V 6 Fig. 2. Extended Output Characteristics @ ºC = V 2 2 8 6 V 2 V..2.3.4..6.7.8.9..2 2 4 6 8 2 4 6 8 2 Fig. 3. Output Characteristics @ ºC Fig. 4. R DS(on) Normalized to I D = 27.A Value vs. Junction Temperature = V 2.8 2.6 2.4 = V 2 RDS(on) - Normalized 2.2 2.8.6.4.2 I D = A I D = 27.A V.8.2.4.6.8.2.4.6.8 2 2.2 2.4.6 - - 7 7 - Degrees Centigrade 4.2 Fig.. R DS(on) Normalized to I D = 27.A Value vs. Drain Current 6 Fig. 6. Maximum Drain Current vs. Case Temperature RDS(on) - Normalized 3.8 3.4 3 2.6 2.2.8 = V V - - - - = 7ºC 2.4 = ºC.6 2 6 8 2 - - 7 7 - Degrees Centigrade 26 IXYS CORPORATION All rights reserved
IXTPN7T IXTYN7T Fig. 7. Input Admittance Fig. 8. Transconductance 9 8 7 6 = - ºC ºC ºC g f s - Siemens 2 = - ºC ºC ºC 2 2. 3 3. 4 4.. 6 6. 7 7. 8 - Volts 2 6 7 8 9 Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge 2 9 8 7 I D = A I G = ma IS - Amperes 8 6 VGS - Volts 6 4 = ºC 3 2 = ºC 2.4..6.7.8.9..2.3.4..6 V SD - Volts 2 Q G - NanoCoulombs Fig.. Capacitance Fig. 2. Maximum Transient Thermal Impedance,. f = MHz Capacitance - PicoFarads, C oss Ciss Z(th)JC - ºC / W.. Crss 2...... Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions.
IXTP N7T IXTY N7T Fig. 3. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 4. Resistive Turn-on Rise Time vs. Drain Current 8 8 8 R G = 8Ω 8 R G = 8Ω 7 = V 7 = V 7 7 = ºC 6 6 I D = A 6 6 = ºC I D = A 6 7 8 9 - Degrees Centigrade 2 4 6 8 2 22 24 26 28 Fig.. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 6. Resistive Turn-off Switching Times vs. Junction Temperature t r t d(on) - - - - 3 4 9 7 = ºC, = V I D = A I D = A 29 27 23 2 t d ( o n ) t f t f t d(off) - - - - R G = 8Ω, = V I D = A I D = A 46 t d ( o f f ) 9 2 6 R G - Ohms 7 6 7 8 9 - Degrees Centigrade t f 4 39 37 33 3 Fig. 7. Resistive Turn-off Switching Times vs. Drain Current t f t d(off) - - - - R G = 8Ω, = V = ºC = ºC 2 4 6 8 2 22 24 26 28 4 2 48 46 44 t d ( o f f ) t f Fig. 8. Resistive Turn-off Switching Times vs. Gate Resistance 9 9 2 8 8 7 I D = A 9 7 8 6 7 6 6 I D = A t f t d(off) - - - - = ºC, = V 2 2 6 R G - Ohms t d ( o f f ) 26 IXYS CORPORATION All rights reserved IXYS REF: T_N7T (V) 7-3-6.xls