Phtcupler Prduct Data Sheet LTV-355T Spec N.: DS7-21-6 Effective Date: 4/2/216 Revisin: J LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics N.9,Chien 1 Rad, Chung H, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-66 http://www.liten.cm/pt
Phtcuplers 1. DESCRIPTION 1.1 Features Current transfer rati ( CTR : MIN. 6% at I F = 1mA, V CE = 2V ) High input-utput islatin vltage ( Vis = 3,75Vrms ) Subminiature type (The vlume is smaller than that f cnventinal DIP type by as far as 3%) Emplys duble transfer mld technlgy Mini-flat package : 2.mm prfile : LTV-355T Safety apprval UL 1577 & cul VDE DIN EN6747-5-5 (VDE 884-5), CSA CA5A FIMKO/DEMKO/SEMKO/NEMKO RHS Cmpliance All materials be used in device are fllwed EU RHS directive (N.22/95/EC). ESD pass HBM 8V/ MM2V/ CDM2V MSL class1 1.2 Applicatins Hybrid substrates that require high density munting. Prgrammable cntrllers 1/1 Part N.
Phtcuplers 2. PACKAGE DIMENSIONS Part N : LTV-355T Ntes : 1. 1-digit Year date cde, 2-digit wrk week. 2. Factry identificatin mark shall be marked (W: China -CZ, X: China -TJ) 3. Rank shall be r shall nt be marked. 4. indicates halgen free ptin. 5. 4 r V fr VDE ptin. 2/1 Part N.
Phtcuplers 3. TAPING DIMENSIONS P/N : LTV-355T TP1 MINI FLAT (3pcs/reel): N Suffix & Suffix TP1 Descriptin Symbl Dimensin in mm (inch) Tape wide W 12±.3 (.47) Pitch f sprcket hles P 4±.1 (.15) Distance f cmpartment Distance f cmpartment t cmpartment F 5.5±.1 (.217) P 2 2±.1 (.79) P 1 8±.1 (.315) 3/1 Part N.
Phtcuplers 4. RATING AND CHARACTERISTICS 4.1 Abslute Maximum Ratings at Ta=25 C Parameter Symbl Rating Unit Frward Current I F 5 ma Input Reverse Vltage V R 6 V Pwer Dissipatin P 7 mw Cllectr - Emitter Vltage V CEO 35 V Output Emitter - Cllectr Vltage V ECO 6 V Cllectr Current I C 8 ma Cllectr Pwer Dissipatin P C 15 mw Ttal Pwer Dissipatin P tt 17 mw 1. Islatin Vltage V is 375 V rms Operating Temperature T pr -55 ~ +11 Strage Temperature T stg -55 ~ +15 2. Sldering Temperature T sl 26 C C C 1. AC Fr 1 Minute, R.H. = 4 ~ 6% Islatin vltage shall be measured using the fllwing methd. (1) Shrt between ande and cathde n the primary side and between cllectr and emitter n the secndary side. (2) The islatin vltage tester with zer-crss circuit shall be used. (3) The wavefrm f applied vltage shall be a sine wave. 2. Fr 1 Secnds 4/1 Part N.
Phtcuplers 4.2 ELECTRICAL OPTICAL CHARACTERISTICS at Ta=25 C Parameter Symbl Min. Typ. Max. Unit Test Cnditin Frward Vltage V F 1.2 1.4 V I F=2mA Input Reverse Current I R 1 A V R=4V Terminal Capacitance C t 3 25 pf V=, f=1khz Cllectr Dark Current I CEO 1 ua V CE=1V, I F= Output Cllectr-Emitter Breakdwn Vltage Emitter-Cllectr Breakdwn Vltage BV CEO 35 V I C=.1mA, I F= BV ECO 6 V I E=1 A, I F= Cllectr Current I C 6 75 ma 1. Current Transfer Rati CTR 6 75 % I F=1mA V CE=2V Cllectr-Emitter Saturatin Vltage V CE(sat).8 1 V I F=2mA I C=5mA Islatin Resistance R is 5 1 1 1 1 11 DC5V, 4 ~ 6% R.H. TRANSFER CHARACTERISTICS Flating Capacitance Cf.6 1 pf V=, f=1mhz V CE=5V, Cut-Off Frequency fc 1 6 khz I C=2mA R L=1, -3dB Respnse Time (Rise) tr 6 3 s V CE=2V, Respnse Time (Fall) tf 53 25 s I C=1mA R L=1, I 1. CTR C 1% I F 5/1 Part N.
Current transfer rati CTR (%) Cllectr current IC (ma) Currentr-emitter saturatin vltage VCE(sat) Ic=.5mA 1mA 5mA 3mA 7mA Frward current IF (ma) 3mA Frward current IF(mA) Cllectr pwer dissipatin Pc (mw) 5. CHARACTERISTICS CURVES Phtcuplers Fig.1 Frward Current vs. Ambient Temperature 6 Fig.2 Cllectr Pwer Dissipatin vs. Ambient Temperature 2 5 4 3 2 1 15 1 5-55 25 5 75 1 125-55 25 5 75 1 125 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Cllectr-emitter Saturatin Vltage vs. Frward Current Fig.4 Frward Current vs. Frward Vltage 8 7 6 5 Ta= 25 C 5 2 1 5 Ta= 75 C 5 C 25 C C -25 C 4 3 2 1 2 5 1.5 1. 1.5 2. 2.5 3. 3.5 4. Frward current IF (ma) 2 1.5 1. 1.5 2. 2.5 3. Frward vltage VF (V) Fig.5 Current Transfer Rati vs. Frward Current 5 4 3 2 1 VCE= 2V Ta= 25 C Fig.6 Cllectr Current vs. Cllectr-emitter Vltage 1 8 6 4 2 IF= 1mA 5mA 2mA Pc(MAX.) 1mA Ta= 25 C.1.2.5 1 2 5 1 Frward current IF (ma) 1 2 3 4 5 Cllectr-emitter vltage VCE (V) 6/1 Part N.
Vltage gain Av (db) Cllectr dark current ICEO(nA) Respnse time ( s) Relative current transfer rati (%) Cllectr-emitter saturatin vltage VCE(sat) (V) Phtcuplers Fig.7 Relative Current Transfer Rati vs. Ambient Temperature 15 1 IF= 1mA, VCE= 5V Fig.8 Cllectr-emitter Saturatin Vltage vs. Ambient Temperature 1.2 1..8 IF= 2mA IC= 1mA.6 5.4.2 2 4 6 8 1 Ambient temperature Ta ( C) 12 2 4 6 8 1 Ambient temperature Ta ( C) 12 Fig.9 Cllectr Dark Current vs. Ambient Temperature Fig.1 Respnse Time vs. Lad Resistance 1 1 VCE= 2V 5 2 1 5 VCE= 2V IC= 1mA Ta= 25 C tr tf 1 1 1 2 1 5 2 1.5 td ts 1 2 4 6 8 1 Ambient temperature Ta ( C) 12.2.5.1.2.5 1 2 5 1 Lad resistance RL(k ) Fig.11 Frequency Respnse Test Circuit fr Respnse Time VCE= 2V IC= 2mA Ta= 25 C Input RD RL Vcc Output Input Output td ts 1% 9% tr tf -1 RL= 1k 1k 1 Test Circuit fr Frequency Respnse Vcc -2.2.1 1 1 1 Frequency f (khz) RD RL Output 7/1 Part N.
Temperature ( C) 6. TEMPERATURE PROFILE OF SOLDERING 6.1 IR Reflw sldering (JEDEC-STD-2C cmpliant) Phtcuplers One time sldering reflw is recmmended within the cnditin f temperature and time prfile shwn belw. D nt slder mre than three times. Prfile item Cnditins Preheat - Temperature Min (T Smin) - Temperature Max (T Smax) - Time (min t max) (ts) 15 C 2 C 9±3 sec Sldering zne - Temperature (T L) - Time (t L) Peak Temperature (T P) Ramp-up rate Ramp-dwn rate 217 C 6 ~ 1 sec 26 C 3 C / sec max. 3~6 C / sec Ramp-up TL 217 C Tsmax 2 C 2 sec TP 26 C Ramp-dwn Tsmin 15 C 6-1 sec tl (Sldering) 25 C 6 ~ 12 sec ts (Preheat) Time (sec) 8/1 Part N.
Phtcuplers 6.2 Wave sldering (JEDEC22A111 cmpliant) One time sldering is recmmended within the cnditin f temperature. Temperature: 26+/-5 C Time: 1 sec. Preheat temperature:25 t 14 C Preheat time: 3 t 8 sec. 6.3 Hand sldering by sldering irn Allw single lead sldering in every single prcess. One time sldering is recmmended. Temperature: 38+/-5 C Time: 3 sec max. 9/1 Part N.
Phtcuplers 7. RRECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit: mm 8. Ntes: LiteOn is cntinually imprving the quality, reliability, functin r design and LiteOn reserves the right t make changes withut further ntices. The prducts shwn in this publicatin are designed fr the general use in electrnic applicatins such as ffice autmatin equipment, cmmunicatins devices, audi/visual equipment, electrical applicatin and instrumentatin. Fr equipment/devices where high reliability r safety is required, such as space applicatins, nuclear pwer cntrl equipment, medical equipment, etc, please cntact ur sales representatives. When requiring a device fr any specific applicatin, please cntact ur sales in advice. If there are any questins abut the cntents f this publicatin, please cntact us at yur cnvenience. The cntents described herein are subject t change withut prir ntice. Immerge unit s bdy in slder paste is nt recmmended. 1/1 Part N.