MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873 1 23 24 Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 22 S = 17 S = 17 M = 6 25 = 48 25 = 74 SM = 55 (sat) = 2.1 (sat) = 2. Input Rectifier Bridge D11 - D16 Symbol Conditio Maximum Ratings RRM 22 I DM SM T C = 8 C; sine 18 T C = 8 C; rectangular; d = 1 / 3 ; bridge T C ; t = 1 ms; sine 5 Hz 4 13 55 P tot T C 11 W Symbol Conditio Characteristic alues F = 5 ; (, unless otherwise specified) 1.25 1.25 I R R = RRM ;.8 1.5.5 m m R thjc (per diode) 1.1 K/W pplication: C motor drives with Input from single or three phase grid Three phase synchronous or asynchronous motor Electric braking operation Features High level of integration - only one power semiconductor module required for the whole drive IGBT technology with low saturation voltage, low switching losses and tail current, high RBSO and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with iulated copper base plate and soldering pi for PCB mounting Temperature see included IXYS reserves the right to change limits, test conditio and dimeio. 29826a 29 IXYS ll rights reserved 1-8
MUBW 5-17 T8 Output Inverter T1 - T6 Symbol Conditio Maximum Ratings S to 15 C 17 S Continuous ± 2 25 8 M T C T C = 8 C T C = 8 C; t p = 1 ms 74 53 1 P tot T C 29 W Symbol Conditio Characteristic alues (sat) = 5 ; = 15 (, unless otherwise specified) 2. 2.4 2.4 (th) = 2 m; = 5 6.5 ES = S ; =.4 m 1. m I GES = ; = ± 2 4 n C ies = 25 ; = ; f = 1 MHz 4.4 nf Q Gon = 9 ; = 15 ; = 75 6 nc t d(on) t r t d(off) t f RBSO t SC (SCSO) Inductive load, = 9 ; = 5 = ±15 ; = 8 Ω = M ; = 15 = 27 Ω; = 1 ; = ±15 ; = 27 Ω t P < 1 µs; non-repetitive; 25 5 5 48 11 12 K < S - L S di/dt 1 µs R thjc.43 K/W Equivalent Circuits for Simulation Conduction IGBT (typ. at = 15 ; T J ) T1-T6 T7 = 1. ; R = 25 mw = 1. ; R = 28 mw Diode (typ. at T J ) D1-D6 = 1.35 ; R = 15 mw D7 I R = 1.65 ; R = 37 mw D11-D16 =.83 ; R = 4.1 mw Output Inverter D1 - D6 Symbol Conditio Maximum Ratings 25 8 T C T C = 8 C Symbol Conditio Characteristic alues F = 5 ; I RM Q rr t rr = 5 ; di F /dt = -12 /µs; ; R = 9 ; = 56 39 2. 2. 8 2 65 9 2.4 µc R thjc (per diode).65 K/W IXYS reserves the right to change limits, test conditio and dimeio. 29826a 29 IXYS ll rights reserved 2-8
MUBW 5-17 T8 Brake Chopper T7 Symbol Conditio Maximum Ratings S to 15 C 17 S Continuous ± 2 25 8 M T C T C = 8 C T C = 8 C; t p = 1 ms P tot T C 2 W Symbol Conditio Characteristic alues (sat) = 3 ; = 15 48 34 6 (, unless otherwise specified) 1.9 2.1 2.2 (th) = 2 m; = 5 6.5 ES = S ; =.6.3 m m I GES = ; = ± 2 4 n C iss = 25 ; = ; f = 1 MHz 4.4 nf Q Gon = 9 ; = 15 ; = 3 6 nc t d(on) t r t d(off) t f RBSO t SC (SCSO) Inductive load, = 9 ; = 3 = ±15 ; = 27 Ω = M ; = 15 = 27 Ω; = 9 ; = ±15 ; = 45 Ω t P < 1 µs; non-repetitive; 165 4 7 4 7 6 K < S - L S di/dt 1 µs R thjc.62 K/W Brake Chopper D7 Symbol Conditio Maximum Ratings RRM to 15 C 17 25 8 T C T C = 8 C Symbol Conditio Characteristic alues F = 3 ; 3 21 2.5 2.6 I R R = RRM ;.2 I RM t rr = 3 ; di F /dt = -8 /µs; R = 9 35 7 3.3.5 m m R thjc (per diode).9 K/W IXYS reserves the right to change limits, test conditio and dimeio. 29826a 29 IXYS ll rights reserved 3-8
MUBW 5-17 T8 Temperature Seor NTC Symbol Conditio Characteristic alues R 25 T 4.75 5. B 25/5 3375 5.25 kω K Module Symbol Conditio Maximum Ratings T JM T stg operating -4...+125 +15-4...+125 ISO I ISOL < 1 m; 5/6 Hz; 1 min. 34 ~ M d Mounting torque (M5) 3-6 Nm Symbol Conditio Characteristic alues R therm-chip Resistance terminal to chip 7 mω d S d Creepage distance on surface Strike distance in air 12.7 9.6 C C C mm mm R thch with heatsink compound.2 K/W Weight 3 g Dimeio in mm (1 mm =.394") IXYS reserves the right to change limits, test conditio and dimeio. 29826a 29 IXYS ll rights reserved 4-8
MUBW 5-17 T8 Input Rectifier Bridge D11 - D16 1 5 1 4 8 4 [] 6 4 SM [] 3 2 = 45 C I 2 t 1 3 [ 2 s] = 45 C = 15 C 2 1 = 15 C..5 1. 1.5 2. F Fig. 1 Typ. forward current vs. voltage drop per diode 5Hz, 8% RRM.1.1 1 t [s] Fig. 2 Surge overload current 1 2 1 2 3 4 5 6 7891 t [ms] Fig. 3 I 2 t versus time per diode 35 14 3 25 P tot 2 [W] 15 1 5 R th : 5. K/W 2.5 K/W 1.5 K/W 1. K/W.75 K/W.5 K/W 12 1 8 I d() 6 [] 4 2 2 4 6 8 1 12 14 I d()m [] Fig. 4 Power dissipation versus direct output current & ambient temperature, sin 18 2 4 6 8 1 12 14 16 I amb [ C] 2 4 6 8 1 12 14 16 T C [ C] Fig. 5 Max. forward current vs. case temperature 1.2 1. P T J R th1 R th2 C th1 C th2 T C Z thjc [K/W].8.6.4.2. 1 1 1 1 1 t [ms] Fig. 6 Traient thermal impedance junction to case IXYS reserves the right to change limits, test conditio and dimeio. 29826a 29 IXYS ll rights reserved 5-8 R i t i 1.6.85 2.24.1 3.586.45 4.114.85 5.317.35
MUBW 5-17 T8 Output Inverter T1 - T6 / D1 - D6 1 8 1 8 = 15 17 19 13 11 6 6 [] 4 [] 4 9 2 2 1 2 3 4 Fig. 7 Typical output characteristic 1 2 3 4 5 Fig. 8 Typical output characteristic 1 1 [] 8 6 4 [] 8 6 4 2 2 5 6 7 8 9 1 11 12 13 Fig. 9 Typical trafer characteristic 1 2 3 F Fig. 1 Typical forward characteristic of free wheeling diode 18 16 14 = 9 = 5 9 8 8 Ω R = 9 = 5 8 Ω 16 14 12 7 12 1 8 6 4 2 I RM [] 6 5 4 8 Ω I RM 27 Ω 27 Ω 8 Ω t rr t rr 1 [] 8 6 5 1 15 2 25 3 35 Q G [nc] Fig. 11 Typical turn on gate charge IXYS reserves the right to change limits, test conditio and dimeio. 3 4 4 6 8 1 12 14 -di/dt [/µs] Fig. 12 Typ. turn-off characteristics of free wheeling diode 29826a 29 IXYS ll rights reserved 6-8
MUBW 5-17 T8 Output Inverter T1 - T6 / D1 - D6 3 3 E [] 2 1 = 9 = ±15 = 8 Ω E [] 25 2 15 1 = 9 = ±15 / = 5 5 2 4 6 8 1, [] Fig. 13 Typ. turn on energy & switching times versus collector current 2 4 6 8 [Ω] Fig. 14 Typ. turn off energy and switching times versus collector current 24 2.7.6 single pulse diode 16 Q rr 12 [µc] 8 = 9 = ±15 = 8 Ω Z thjc [K/W].5.4.3.2 IGBT 4.1 2 4 6 8 1 [] Fig. 15 Typical turn-off characteristics of free wheeling diode. 1 1 1 1 1 t [ms] Fig. 16 Traient thermal impedance junction to case Temperature Seor NTC 1 R 1 [Ω] IGBT Diode R i t i R i t i 1.326.14.1941.26 2.1311.258.542.16 3.1492.199.2549.93 4.1169.6361.1461.5958 R R R 1 3 6 9 12 15 T [ C] Fig. 17 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditio and dimeio. C C C 29826a 29 IXYS ll rights reserved 7-8
MUBW 5-17 T8 Brake Chopper T7 / D7 6 6 5 4 5 4 [] 3 [] 3 2 2 1 1..5 1. 1.5 2. 2.5 3. 3.5 4. Fig. 18 Typical output characteristic..5 1. 1.5 2. 2.5 3. 3.5 F Fig. 19 Typ. forward characteristics of brake diode 3 3 2 E [] 1 = 9 = ±15 = 8 Ω E [] 25 2 15 1 = 9 = ±15 / = 5 5 2 4 6 8 1, [] Fig. 2 Typ. turn on energy & switching times versus collector current 2 4 6 8 [Ω] Fig. 21 Typ. turn off energy and switching times versus collector current 15 E = 3 = 9 1..8 single pulse diode 1 Z thjc.6 IGBT 5 [K/W].4.2 5 1 15 2 25 3 35 Q G [nc] Fig. 22 Typ. turn on gate charge IXYS reserves the right to change limits, test conditio and dimeio.. 1 1 1 1 1 t [ms] Fig. 23 Traient thermal impedance junction to case 29826a 29 IXYS ll rights reserved 8-8