GigaMOS TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Advance Technical Information IXFK12N3T IXFX12N3T S = 3V I D25 = 12A R DS(on) 24mΩ t rr 2ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V DGR = 25 C to 15 C, R GS = 1MΩ 3 V S Continuous ± 2 V M Transient ± 3 V I D25 = 25 C 12 A I DM = 25 C, Pulse Width Limited by M 33 A I A = 25 C 3 A E AS = 25 C 2.5 J dv/dt I S I DM, V DD S, 15 C 2 V/ns P D = 25 C 96 W -55... +15 C M 15 C T stg -55... +15 C T L 1.6mm (.62 in.) from Case for 1s 3 C T SOLD Plastic Body for 1s 26 C M d Mounting Torque (TO-264) 1.13/1 Nm/lb.in. F C Mounting Force (PLUS247) 2..12 /4.5..27 N/lb. Weight TO-264 1 g PLUS247 6 g G D PLUS247 (IXFX) G = Gate D = Drain S = Source TAB = Drain Features S (TAB) (TAB) International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. BS = V = 3mA 3 V (th) = = 4mA 2.5 5. V I GSS = ± 2V, = V ± 2 na I DSS = S, = V 5 µa = 125 C 3 ma R DS(on) = 1V = 6A, Note 1 24 mω Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 29 IXYS CORPORATION, All rights reserved DS132(3/9)
Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs = 1V = 6A, Note 1 7 12 S C iss 2 nf C oss = V, = 2, f = 1MHz 138 pf C rss 135 pf t d(on) 32 ns Resistive Switching Times t r 31 ns V t GS = 1, =.5 S =.5 I D25 d(off) R 87 ns G = 1Ω (External) t f 23 ns Q g(on) 265 nc Q gs = 1V, =.5 S =.5 I D25 87 nc Q gd 6 nc R thjc.13 C/W R thcs.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. I S = V 12 A I SM Repetitive, Pulse Width Limited by M 48 A V SD I F = 6A, = V, Note 1 1.5 V t rr 2 ns I Q F = 6A, -di/dt = A/µs RM.8 µc V I R = 7, = V RM 1.4 A TO-264 (IXFK) Outline IXFK12N3T IXFX12N3T Dim. Millimeter Inches Min. Max. Min. Max. A 4.82 5.13.19.22 A1 2.54 2.89..114 A2 2. 2.1.79.83 b 1.12 1.42.44.56 b1 2.39 2.69.94.16 b2 2.9 3.9.114.122 c.53.83.21.33 D 25.91 26.16 1.2 1.3 E 19.81 19.96.78.786 e 5.46 BSC.215 BSC J..25..1 K..25..1 L 2.32 2.83.8.82 L1 2.29 2.59.9.12 P 3.17 3.66.125.144 Q 6.7 6.27.239.247 Q1 8.38 8.69.33.342 R 3.81 4.32.15.17 R1 1.78 2.29.7.9 S 6.4 6.3.238.248 T 1.57 1.83.62.72 PLUS 247 TM (IXFX) Outline Note 1: Pulse Test, t 3µs; Duty Cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21.19.25 A 1 2.29 2.54.9. A 2 1.91 2.16.75.85 b 1.14 1.4.45.55 b 1 1.91 2.13.75.84 b 2 2.92 3.12.115.123 C.61.8.24.31 D 2.8 21.34.819.84 E 15.75 16.13.62.635 e 5.45 BSC.215 BSC L 19.81 2.32.78.8 L1 3.81 4.32.15.17 Q 5.59 6.2.22.244 R 4.32 4.83.17.19 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXFK12N3T IXFX12N3T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 12 11 = 1V 3 25 = 1V 8V 9 8 7 6 5 4 2 15 3 2 1..4.8 1.2 1.6 2. 2.4 2.8 5 2 4 6 8 1 12 14 16 18 2 Fig. 3. Output Characteristics @ 125ºC Fig. 4. R DS(on) Normalized to I D = 6A Value vs. Junction Temperature 12 11 = 1V 2.8 2.6 2.4 = 1V 9 8 7 6 5 4 3 RDS(on) - Normalized 2.2 2. 1.8 1.6 1.4 1.2 1. I D = 12A I D = 6A 2.8 1.6..5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. 5.5 6..4-5 -25 25 5 75 125 15 - Degrees Centigrade Fig. 5. R DS(on) Normalized to I D = 6A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3. 14 RDS(on) - Normalized 2.8 2.6 2.4 2.2 2. 1.8 1.6 1.4 1.2 1..8 = 1V = 125ºC = 25ºC 12 8 6 4 2.6 2 4 6 8 12 14 16 18 2 22 24 26 28-5 -25 25 5 75 125 15 - Degrees Centigrade 29 IXYS CORPORATION, All rights reserved
IXFK12N3T IXFX12N3T Fig. 7. Input Admittance Fig. 8. Transconductance 2 18 2 18 = - 4ºC 16 16 14 12 8 = 125ºC 25ºC - 4ºC g f s - Siemens 14 12 8 25ºC 125ºC 6 6 4 4 2 2 3.2 3.6 4. 4.4 4.8 5.2 5.6 6. 6.4 6.8 - Volts 2 4 6 8 12 14 16 18 2 Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 1. Gate Charge 35 1 3 9 8 = 1 I D = 6A I G = 1mA 25 7 IS - Amperes 2 15 VGS - Volts 6 5 4 = 125ºC 3 5 = 25ºC 2 1..2.4.6.8 1. 1.2 1.4 1.6 1.8 V SD - Volts 3 6 9 12 15 18 21 24 27 Q G - NanoCoulombs, Fig. 11. Capacitance 1,. Fig. 12. Forward-Bias Safe Operating Area f = 1 MHz C iss R DS(on) Limit Capacitance - PicoFarads 1, C oss 1, C rss 5 1 15 2 25 3 35 4. 1. 1. = 15ºC = 25ºC Single Pulse.1 1 1 1ms 25µs µs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_12N3T(9W)3-23-9
IXFK12N3T IXFX12N3T Fig. 13. Maximum Transient Thermal Impedance 1. Z(th)JC - ºC / W.1.1..1.1.1.1.1 1 1 Pulse Width - Seconds 29 IXYS CORPORATION, All rights reserved IXYS REF: F_12N3T(9W)3-23-9