NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit

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NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit of.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. Features Short Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching Loss of Ground Protection ESD Protection Slew Rate Control for Low EMI Very Low Standby Current NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q Qualified and PPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Automotive Industrial SOT 223 (TO 26) CASE 38E XXXXX = V85 or 85A A = Assembly Location Y = Year W = Work Week = Pb Free Package MARKING DIAGRAM AYW XXXXX (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. PRODUCT SUMMARY Symbol Characteristics Value Unit V IN_CL Overvoltage Protection 5 V V D(on) Operation Voltage.5 5 V R on On State Resistance. Semiconductor Components Industries, LLC, 25 September, 28 Rev. 6 Publication Order Number: NCV85/D

NCV85, NCV85A V D (Pins 2, ) Regulated Charge Pump Output Clamping IN (Pin ) R_IN Control Logic Current Limitation OUT (Pin 3) Overtemperature Detection Figure. Block Diagram PACKAGE PIN DESCRIPTION Pin # Symbol Description IN Control Input, Active Low 2 V D Supply Voltage 3 OUT Output V D Supply Voltage 2

NCV85, NCV85A MAXIMUM RATINGS Rating Symbol DC Supply Voltage (Note ) V D 6 5 V Load Dump Protection (RI = 2, t d = ms, V IN =, V, I L = 5 ma, V bb = 3.5 V) Min Value Max V Loaddump 85 V Input Current I in 5 5 ma Output Current (Note ) I out Internally Limited A Total Power Dissipation @ T A = 25 C (Note 2) @ T A = 25 C (Note 3) Electrostatic Discharge (Note ) (Human Body Model (HBM) pf/5 ) Input All other Single Pulse Inductive Load Switching Energy (Note ) (V DD = 3.5 V, I = 65 mapk, L = 2 mh, T JStart = 5 C) P D.3.6 Unit E AS 29 mj Operating Junction Temperature T J +5 C Storage Temperature T storage 55 +5 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. 2. Minimum Pad. 3. in square pad size, FR, oz Cu.. Not subjected to production testing. 5 W kv THERMAL RESISTANCE RATINGS Parameter Symbol Max Value Unit Thermal Resistance (Note 5) Junction to Ambient (Note 2) Junction to Ambient (Note 3) 5. Not subjected to production testing. R JA R JA 78.3 K/W + I D V D I IN IN OUT V OUT NCV85/A Figure 2. Applications Test Circuit 3

NCV85, NCV85A ELECTRICAL CHARACTERISTICS (6 V D 5 V; C <T J < 5 C unless otherwise specified) Value Rating Symbol Conditions Min Typ Max Unit OUTPUT CHARACTERISTICS Operating Supply Voltage V SUPPLY.5 5 V On Resistance (Pin Connected to GND) R ON T J = 25 C, I OUT = 5 ma, V D = 7 V 5 V T J = 5 C, I OUT = 5 ma, V D = 7 V 5 V (Note 6) T J = 25 C, I OUT = 5 ma, V D = 6 V... 2 3 2. Standby Current (Pin Open) I D V D 2 V V D > 2 V INPUT CHARACTERISTICS Input Current Off State I IN_OFF V OUT. V, R L = 27, T J = 25 C V OUT.V, R L = 27, T J = 5 C (Note 6) Input Current On State (Pin Grounded) 5.6 I IN_ON.5 3 ma Input Resistance (Note 6) R IN k SWITCHING CHARACTERISTICS Turn On Time (Note 7) t ON RL = 27 (Note 6) (V IN = V D to V) to 9% V OUT V D = 3.5 V, R L = 27, T J = 25 C 3 Turn Off Time (Note 7) t OFF R L = 27 (Note 6) (V IN = V to V D ) to % V OUT V D = 3.5 V, R L = 27, T J = 25 C 6 Slew Rate On (Note 7) (V IN = V D to V) % to 3% V OUT Slew Rate Off (Note 7) (V IN = V to V D ) 7% to % V OUT dv/dt ON RL = 27 (Note 6) V D = 3.5 V, R L = 27, T J = 25 C.7 dv/dt OFF R L = 27 (Note 6) V D = 3.5 V, R L = 27, T J = 25 C.9 OUTPUT DIODE CHARACTERISTICS (Note 6) Drain Source Diode Voltage V F I OUT =.2 A.6 V Continuous Reverse Drain Current I S T J = 25 C.2 A PROTECTION FUNCTIONS (Note 8) Temperature Shutdown (Note 6) T SD 5 75 C Temperature Shutdown Hysteresis (Note 6) 25 75 5 T SD_HYST 5 C Output Current Limit I LIM T J = C, V D = 3.5 V, t m = s (Note 6) T J = 25 C, V D = 3.5 V, t m = s T J = 5 C, V D = 3.5 V, t m = s (Note 6).5.8 A A s s V/ s V/ s.5 A Output Clamp Voltage V CLAMP I OUT = ma 5 52 V (Inductive Load Switch Off) At V OUT = V D V CLAMP Overvoltage Protection V IN_CL I CLAMP = ma 5 5 V 6. Not subjected to production testing 7. Only valid with high input slew rates 8. Protection functions are not designed for continuous repetitive operation and are considered outside normal operating range

NCV85, NCV85A TYPICAL CHARACTERISTIC CURVES R DS(on) ( ) 2..8 I out = 5 ma.6..2 V D = 6 V..8 V D = 5 V.6..2 2 2 6 8 2 Figure 3. R DS(on) vs. Temperature R DS(on) ( )..95 V D = 6 V.9.85.8 V D = 9 V.75.7.65 T A = 25 C.6..2.3..5 OUTPUT LOAD (A) Figure. R DS(on) vs. Output Load R DS(on) ( ) 5..5. 3.5 3. 2.5 2..5..5 5 C 25 C 25 C C 2 3 5 V D (V) Figure 5. R DS(on) vs. V D TURN ON TIME ( s) 8 7 6 5 3 2 R LOAD = 27 V D = 2 V V D = 3.5 V V D = 9 V 2 2 6 8 2 Figure 6. Turn On Time vs. Temperature TURN OFF TIME ( s) 2 8 6 2 R LOAD = 27 V D = 2 V V D = 3.5 V V D = 9 V SLEW RATE (ON) (V/ s).2..8.6..2 R LOAD = 27 V D = 2 V V D = 3.5 V V D = 9 V 2 2 6 8 2 2 2 6 8 2 Figure 7. Turn Off Time vs. Temperature Figure 8. Slew Rate (ON) vs. Temperature 5

NCV85, NCV85A TYPICAL CHARACTERISTIC CURVES SLEW RATE (OFF) (V/ s).2 V D = 3.5 V V D = 2 V.8 V D = 9 V.6..2 R LOAD = 27 2 2 6 8 2 Figure 9. Slew Rate (OFF) vs. Temperature CURRENT LIMIT (A)..2.8.6..2 V D = 3.5 V 2 2 6 8 2 Figure. Current Limit vs. Temperature. 7 PEAK SC CURRENT (A).2..8.6..2 5 C T A = C 25 C 25 C V D, LEAKAGE CURRENT ( A) 6 5 3 2 V D = 5 V V D = 25 V 2 3 5 V D, VOLTAGE (V) Figure. Peak Short Circuit Current vs. V D Voltage V D = 5 V 2 2 6 8 2 Figure 2. V D Leakage Current vs. Temperature Off State 7 2.5 V D, LEAKAGE CURRENT ( A) 6 5 3 2 C 25 C 25 C 5 C INPUT CURRENT (ma) 2..5..5 V D = 5 V V D = 28 V V D = 5 V V D = 6 V 5 5 2 25 3 35 5 V D, VOLTAGE (V) Figure 3. V D Leakage Current vs. V D Voltage Off State 2 2 6 8 2 Figure. On State Input Current vs. Temperature 6

NCV85, NCV85A TYPICAL CHARACTERISTIC CURVES INPUT CURRENT (ma) 8 7 6 5 3 2 R out = 5 C 25 C 25 C C 2 V D, VOLTAGE (V) Figure 8. Input Current vs. V D Voltage Off State OUTPUT VOLTAGE (V) 2 8. 6.. 2. R OUT = k V IN = V 2 3 5 6 7 8 9 V D, VOLTAGE (V) Figure 5. Output Voltage vs. V D Voltage INPUT CURRENT (ma) 8 7 6 5 3 2 C 25 C 25 C 5 C 5 5 2 25 3 35 5 5 55 6 65 V D, VOLTAGE (V) Figure 6. Input Current vs. V D Voltage On State CURRENT (ma) 9 8 7 6 5 3 2 T A = 5 C V D = 2 V 5 5 LOAD INDUCTANCE (mh) Figure 7. Single Pulse Maximum Switch off Current vs. Load Inductance V D = 3.5 V SHUTDOWN TIME (ms) V D = 2 V V D = 2 V 2 2 6 8 2 Figure 9. Initial Short Circuit Shutdown Time vs. Temperature 7

NCV85, NCV85A TYPICAL CHARACTERISTIC CURVES 2 R JA ( C/W) 8 6 PCB Cu thickness,. oz PCB Cu thickness, 2. oz 2 2 3 5 6 7 COPPER HEAT SPREADER AREA (mm 2 ) Figure 2. R JA vs. Copper Area R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE... E 6 Duty Cycle =.5.2..5.2. Single Pulse Psi TSP A(t) E 5 E E 3 E 2 E E+ E+ E+2 E+3 PULSE TIME (s) Figure 2. Transient Thermal Response ISO PULSE TEST RESULTS Test Pulse Test Level Test Results Pulse Cycle Time and Generator Impedance 2 V C 5 ms, 2 5 V C 5 ms, 3a 2 V C ms, 5 3b 2 V C ms, 5 5 75 V E( V) ms, 2 ORDERING INFORMATION Device Package Shipping NCV85STT3G NCV85ASTT3G SOT 223 (Pb Free) SOT 223 (Pb Free) / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 8

NCV85, NCV85A PACKAGE DIMENSIONS SOT 223 (TO 26) CASE 38E ISSUE P 9

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