! 2007-05-23 BIOFY Sensor Draft Version.3 SFH 7072 Draft - This design is for Reference only. Features: Multi chip package featuring two green emitters, one red emitter, one infrared emitter and two detectors Package size: (WxDxH) 7.5 mm x 3.9 mm x 0.9 mm Light Barriers to block optical crosstalk optimized for strong PPG signal 7 Applications Heart rate monitoring Pulse oximetry for: Wearable devices (e.g. smart watches, fitness trackers,...) Mobile devices Ordering Information Type SFH7072 Ordering Code Q65112A1516 2016-11-24 1
Pin configuration Pin Name Function 1 BPC Broadband photodiode cathode 2 BPA Broadband photodiode anode 3 IPC IR-Cut photodiode cathode 4 IA Infrared LED anode 5 G1A Green LED 1 anode 6 G1C Green LED 1 cathode 7 RA Red LED anode 8 RC Red LED cathode 9 IC Infrared LED cathode 10 IPA IR-Cut photodiode anode 11 G2A Green LED 2 anode 12 G2C Green LED 2 cathode Block diagram 2016-11-24 2
Maximum Ratings (T A = 25 C) Parameter Symbol Values Unit General Operating temperature range T op -40 85 C Storage temperature range T stg -40 85 C ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) V ESD 2 kv Infrared Emitter Reverse Voltage V R 5 V Forward current I F (DC) 60 ma Surge current (t p = 100 µs, D = 0) I FSM 1 A Red Emitter Reverse voltage V R 12 V Forward current I F (DC) 40 ma Surge current (t p = 100 µs, D = 0) I FSM 600 ma Green Emitters Reverse voltage V R 5 V Forward current I F (DC) 25 ma Surge current (t p = 10 µs, D = 0) I FSM 300 ma Detectors Reverse voltage V R 16 V 2016-11-24 3
Characteristics (T A = 25 C) Parameter Symbol Value Unit Infrared Emitter Wavelength of peak emission (typ.) peak 950 nm Centroid Wavelength (typ. centroid 940 (±10) nm (max.)) Spectral bandwidth at 50% of I max (typ.) 42 nm Half angle (typ.) ± 60 Rise and fall time of I e (10% and 90% of I e max ) (I F = 100 ma, t p = 16 µs, R L = 50 ) (typ.) t r, t f 16 ns Forward voltage Reverse current (V R = 5 V) Radiant intensity Total radiant flux Temperature coefficient of I e or e Temperature coefficient of V F Temperature coefficient of centroid (typ. (max.)) V F 1.3 ( 1.8) V I R not designed for reverse operation (typ.) I e 3.9 mw / sr µa (typ.) e 11 mw (typ.) TC I -0.3 % / K (typ.) TC V -0.8 mv / K (typ.) TC centroid 0.25 nm / K 2016-11-24 4
Characteristics (T A = 25 C) Parameter Symbol Value Unit Red Emitter Wavelength of peak emission (typ.) peak 660 nm (I F = 20 ma) Centroid Wavelength (typ. centroid 655 (±3) nm (I F = 20 ma) (max.)) Spectral bandwidth at 50% of I max (typ.) 17 nm (I F = 20 ma) Half angle (typ.) ± 60 Rise and fall time of I e (10% and 90% of I e max ) (I F = 100 ma, t p = 16 µs, R L = 50 ) (typ.) t r, t f 17 ns Forward voltage (I F = 20 ma) Reverse current (V R = 12V) Radiant intensity Total radiant flux Temperature coefficient of centroid (I F = 20 ma, -10 C T 100 C) (typ. (max.)) V F 2.1 ( 2.8) V I R not designed for reverse operation (typ.) I e 4.8 mw / sr µa (typ.) e 14 mw (typ.) TC centroid 0.13 nm / K 2016-11-24 5
Characteristics (T A = 25 C) Parameter Symbol Value Unit Green Emitter (single emitter) Wavelength of peak emission (typ.) peak 526 nm (I F = 20 ma) Centroid Wavelength (typ. centroid 530 (±10) nm (I F = 20 ma) (max.)) Spectral bandwidth at 50% of I max (typ.) 32 nm (I F = 20 ma) Half angle (typ.) ± 60 Rise and fall time of I e (10% and 90% of I e max ) (I F = 100 ma, t p = 16 µs, R L = 50 ) (typ.) t r, t f 56 ns Forward voltage (I F = 20 ma) Reverse current (V R = 5 V) Radiant intensity Total radiant flux Temperature coefficient of e or e Temperature coefficient of centroid (I F = 20 ma, -10 C T 100 C) Temperature coefficient of V F (I F = 20 ma, -10 C T 100 C) (typ. (max.)) V F 3.0 ( 3.4) V I R not designed for reverse operation (typ.) I e 3.8 mw / sr µa (typ.) e 11 mw (typ.) TC -0.35 % / K (typ.) TC centroid 0.03 nm / K (typ.) TC V -3.6 mv / K 2016-11-24 6
Characteristics (T A = 25 C) Parameter Symbol Value Unit IR-Cut Detector Photocurrent (typ.) I P,530 0.985 µa (E e = 0.1 mw/cm 2, = 530 nm, V R = 5 V) Wavelength of max. sensitivity (typ.) S max 635 nm Spectral range of sensitivity (typ.) 10% 402 694 nm Radiation sensitive area (typ.) A 3.46 mm 2 Dimensions of radiant sensitive area (typ.) L x W 1.29 x 2.69 mm x mm Half angle (typ.) ± 57 Dark current (V R = 5 V, Ee = 0 mw/cm 2 ) Spectral sensitivity of the chip ( = 530nm) Spectral sensitivity of the chip ( > 690nm) Open-circuit voltage (E e = 0.1 mw/cm 2, = 530 nm) Short-circuit current (E e = 0.1 mw/cm 2, = 530 nm) Rise and fall time (V R = 5 V, R L = 50, = 530nm) Forward voltage (I F = 10 ma, E = 0 mw/cm 2 ) Capacitance (V R = 5 V, f = 1 MHz, E = 0 mw/cm 2 ) (typ. (max.)) I R 0.4 ( 2) na (typ.) S 530 0.31 A / W (typ.) S IR 0.02 A / W (typ.) V O,530 390 mv (typ.) I SC,530 0.984 µa (typ.) t r, t f 40 ns (typ.) V F 0.84 V (typ.) C 0 55 pf 2016-11-24 7
Characteristics (T A = 25 C) Parameter Symbol Value Unit Broadband Detector Photocurrent (typ.) I P,530 0.26 µa (E e = 0.1 mw/cm 2, = 530nm, V R = 5 V) Photocurrent (typ.) I P,655 0.46 µa (E e = 0.1 mw/cm 2, = 655 nm, V R = 5 V) Photocurrent (typ.) I P,940 0.79 µa (E e = 0.1 mw/cm 2, = 940 nm, V R = 5 V) Wavelength of max. sensitivity (typ.) S max 960 nm Spectral range of sensitivity (typ.) 10% 410 1100 nm Radiation sensitive area (typ.) A 0.79 mm 2 Dimensions of radiant sensitive area (typ.) L x W 0.89 x 0.89 mm x mm Half angle (typ.) ± 60 Dark current (V R = 5 V, Ee = 0 mw/cm 2 ) Spectral sensitivity of the chip ( = 530 nm) Spectral sensitivity of the chip ( = 655nm) Spectral sensitivity of the chip ( = 940 nm) Open-circuit voltage (E e = 0.1 mw/cm 2, = 530 nm) Short-circuit current (E e = 0.1 mw/cm 2, = 530 nm) Open-circuit voltage (E e = 0.1 mw/cm 2, = 655nm) Short-circuit current (E e = 0.1 mw/cm 2, = 655 nm) Open-circuit voltage (E e = 0.1 mw/cm 2, =940 nm) Short-circuit current (E e = 0.1 mw/cm 2, = 940 nm) (typ. (max.)) I R 0.05 ( 10) na (typ.) S 530 0.31 A / W (typ.) S 655 0.56 A / W (typ.) S 940 0.84 A / W (typ.) V O,530 211 mv (typ.) I SC,530 0.24 µa (typ.) V O,655 249 mv (typ.) I SC,655 0.43 µa (typ.) V O,940 266 mv (typ.) I SC,940 0.79 µa 2016-11-24 8
Characteristics (T A = 25 C) Parameter Symbol Value Unit Rise and fall time (V R = 5V, R L = 50, = 940 nm) Forward voltage (I F = 100 ma, E = 0 mw/cm 2 ) Capacitance (V R = 5 V, f = 1 MHz, E = 0 mw/cm 2 ) (typ.) t r, t f 0.75 µs (typ.) V F 1.16 V (typ.) C 0 4.2 pf Diagrams for infrared emitter Relative spectral emission 1) I rel = f( ), T A = 25 C, I F = 20 ma 2016-11-24 9
Diagrams for infrared emitter Forward current 1) I F = f(v F ), single pulse, t p = 100 µs, T A = 25 C Relative radiant flux 1) e / e (20 ma) = f(i F ), single pulse, t p = 25µs, T A = 25 C Max. permissible forward current 1) I F,max = f(t A ), R thja = 800 K/W 2016-11-24 10
Diagrams for infrared emitter Permissible pulse handling capability 1) I F = f(t p ), T A = 40 C, duty cycle D = parameter Permissible pulse handling capability 1) I F = f(t p ), T A = 85 C, duty cycle D = parameter 2016-11-24 11
Diagrams for red emitter Relative spectral emission 1) I rel = f( ), T A = 25 C, I F = 20 ma Forward current 1) I F = f(v F ), T A = 25 C Relative radiant flux 1) e / e (20 ma) = f(i F ), single pulse, t p = 25µs, T A = 25 C 2016-11-24 12
Diagrams for red emitter Max. permissible forward current 1) I F,max = f(t A ), R thja = 800 K/W Permissible pulse handling capability 1) I F = f(t p ), T A = 40 C, duty cycle D = parameter Permissible pulse handling capability 1) I F = f(t p ), T A = 85 C, duty cycle D = parameter 2016-11-24 13
Diagrams for green emitters Relative spectral emission 1) I rel = f( ), T A = 25 C, I F = 20 ma Forward current 1) I F = f(v F ), T A = 25 C Relative radiant flux 1) e / e (20 ma) = f(i F ), single pulse, t p = 25µs, T A = 25 C 2016-11-24 14
Diagrams for green emitters Max. permissible forward current 1) I F,max = f(t A ), R thja = 800 K/W Permissible pulse handling capability 1) I F = f(t p ), T A = 40 C, duty cycle D Permissible pulse handling capability 1) I F = f(t p ), T A = 85 C, duty cycle D 2016-11-24 15
Diagrams for IR-Cut detector Relative spectral sensitivity 1) S rel = f( ), T A = 25 C Photocurrent 1) I P (V R = 5 V), =530nm, T A = 25 C Dark current 1) I R = f(v R ), E = 0 mw/cm 2, T A = 25 C Capacitance 1) C = f(v R ), f = 1 MHz, E = 0 mw/cm 2, T A = 25 C 2016-11-24 16
Diagrams for broadband detector Relative spectral sensitivity 1) S rel = f( ), T A = 25 C Photocurrent 1) I P (V R = 5 V), =530, 655nm, 940nm, T A = 25 C Dark current 1) I R = f(v R ), E = 0 mw/cm 2, T A = 25 C Capacitance 1) C = f(v R ), f = 1 MHz, E = 0 mw/cm 2, T A = 25 C 2016-11-24 17
Directional characteristics of detectors 1) S rel = f( ), =530nm Radiation characteristics of emitters 1) I rel = f( ) 2016-11-24 18
Package Outline Dimensions in mm Package: chip on board Approximate Weight: 44 mg 2016-11-24 19
Recommended solder pad design Dimensions in mm. Reflow Soldering Profile Product complies to MSL Level 4 acc. to JEDEC J-STD-020D.01 300 C T 250 200 240 C 217 C t P t L T p OHA04525 245 C 150 t S 100 50 25 C 0 0 50 100 150 200 250 s 300 t 2016-11-24 20
Profile Feature Profil-Charakteristik Ramp-up rate to preheat* ) 25 C to 150 C Time t S T Smin to T Smax Ramp-up rate to peak* ) T Smax to T P Liquidus temperature Time above liquidus temperature Symbol Symbol t S T L t L Minimum 60 Pb-Free (SnAgCu) Assembly Recommendation 2 3 K/s 100 120 2 3 217 Maximum 80 100 OHA04612 Unit Einheit s K/s C s Peak temperature Time within 5 C of the specified peak temperature T P - 5 K Ramp-down rate* T P to 100 C Time 25 C to T P T P t P 245 260 10 20 30 All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range 3 6 480 C s K/s s Method of Taping Dimensions in mm. 2016-11-24 21
Tape and Reel 16 mm tape with 1500 pcs. on 180 mm reel W 1 D 0 P 0 P 2 F E W A N 13.0 ±0.25 P 1 Label Direction of unreeling Dimensions in mm W 2 Direction of unreeling Leader: min. 400 mm * Trailer: min. 160 mm * *) Dimensions acc. to IEC 60286-3; EIA 481-D OHAY0324 Tape Dimensions [mm] W P 0 P 1 P 2 D 0 E F 16 +0.3 / -0.1 4 ±0.1 8 ±0.1 2 ±0.05 1.5 ±0.1 1.75 ±0.1 7.5 ±0.05 Reel Dimensions [mm] A W N min W 1 W 2max 180 16 60 16.4 +2 22.4 2016-11-24 22
_< C). _< WET Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. Do not eat. Draft Version α.3 SFH 7072 Barcode-Product-Label (BPL) EXA AMP AMD/MP MPL PLE OSRAM Opto po Semiconductors ors (6P) BATCH ENO: : 1234567890 XA(9D AMD) D C (1T) LOT NO: 1234567890 (9D) D/C: 1234 M234 M: (X) PROD NO: 123456789(Q)QTY: 9999 (G) GROUP: LX XXXX RoHS Compliant AM DEMY BIN1: XX-XX-X-XXX-X ML Temp ST X XXX C X Pack: RXX DEMY XXX X_X123_1234.1234 _123 234.1234 X XX-XX-X-X X-X-X OHA04563 Dry Packing Process and Materials OSRAM Moisture-sensitive label or print Barcode label Humidity indicator Barcode label Comparator check dot 5% 10% 15% If wet, parts still adequately dry. change desiccant If wet, examine units, if necessary bake units If wet, examine units, if necessary bake units CAUTION LEVEL If blank, see bar code label This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS 1. Shelf life in sealed bag: 24 months at < 40 C and < 90% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 30 C/60% RH. Floor time see below b) Stored at 10% RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 10% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-033 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours Desiccant Humidity Indicator MIL-I-8835 OSRAM OHA00539 Note: Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card. Regarding dry pack you will find further information in the internet. Here you will also find the normative references like JEDEC. 2016-11-24 23
_< C). _< 11 0 (9D) D/C: 0144 Bin2: Q-1-20 Bin3: ML Temp ST 2 220 C R 2a 11 0 (9D) D/C: 0144 Bin2: Q-1-20 Bin3: ML Temp ST 2 220 C R 2a Draft Version α.3 SFH 7072 Transportation Packing and Materials Barcode label Barcode label CAUTION LEVEL This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS 1. Shelf life in sealed bag: 24 months at < 40 C and < 90% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 30 C/60% RH. Floor time see below b) Stored at 10% RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 10% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-033 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours If blank, see bar code label OSRAM Opto Semiconductors (6P) BATCH NO: (1T) LOT NO: 210021998 123GH1234 Muster (X) PROD NO: 1 0 425 (Q)QTY: 2000 LSY T676 Multi TOPLED Bin1: P-1-20 240 C R 3 260 C RT Additional TEXT R077 PACKVAR: (G) GROUP: R18 DEMY P-1+Q-1 OSRAM Opto Semiconductors (6P) BATCH NO: (1T) LOT NO: 210021998 123GH1234 Muster (X) PROD NO: 1 0 425 (Q)QTY: 2000 LSY T676 Multi TOPLED Bin1: P-1-20 240 C R 3 260 C RT Additional TEXT R077 PACKVAR: (G) GROUP: R18 DEMY P-1+Q-1 OSRAM Packing Sealing label OHA02044 Dimensions of transportation box in mm Width Length Height 195 ± 5 195 ± 5 42 ± 5 2016-11-24 24
Disclaimer OSRAM OS assumes no liability whatsoever for any use of this document or its content by recipient including, but not limited to, for any design in activities based on this preliminary draft version. OSRAM OS may e.g. decide at its sole discretion to stop developing and/or finalizing the underlying design at any time. Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.?If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office.?by agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. Glossary 1) Typical Values: Due to the special conditions of the manufacturing processes of LED and photodiodes, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com All Rights Reserved. 2016-11-24 25