INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification DESCRIPTION High Breakdown oltage- : (BR)CBO = 1100(Min) Fast Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T a =25 ) SYMBOL PARAMETER ALUE UNIT CBO -Base oltage 1100 CEO -Emitter oltage 800 EBO Emitter-Base oltage 7 I C Current-Continuous 3 A I CM Current-Peak 10 A I B Base Current-Continuous 1.5 A P C Power Dissipation @ T C=25 50 W T J Junction Temperature 150 T stg Storage Temperature Range -55~150 isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification ELECTRICAL CHARACTERISTICS T C=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT (BR)CEO -Emitter Breakdown oltage I C= 5mA; R BE= 800 CEO(SUS) -Emitter Sustaining oltage I C= 1.5A; I B1= -I B2= 0.3A; L= 2mH; clamped 800 (BR)CBO -Base Breakdown oltage I C= 1mA; I E= 0 1100 (BR)EBO Emitter-Base Breakdown oltage I E= 1mA; I C= 0 7 CE(sat) -Emitter Saturation oltage I C= 1.5A; I B= 0.3A 2.0 BE(sat) Base-Emitter Saturation oltage I C= 1.5A; I B= 0.3A 1.5 I CBO Cutoff Current CB= 800; I E=0 10 μa I EBO Emitter Cutoff Current EB= 5; I C=0 10 μa h FE-1 DC Current Gain I C= 0.2A; CE= 5 10 40 h FE-2 DC Current Gain I C= 1A; CE= 5 8 C OB Output Capacitance I E= 0; CB= 10; f test =1.0MHz 60 pf f T Current-Gain Bandwidth Product I C= 0.2A; CE= 10 15 MHz Switching times t on Turn-on Time 0.5 μs t stg Storage Time I C= 2A, I B1= 0.4A; I B2= -0.8A R L= 200Ω; CC=400 3.0 μs t f Fall Time 0.3 μs h FE-1 Classifications K L M 10-20 15-30 20-40 isc Website:www.iscsemi.cn 2
Ordering number:en1580c NPN Triple Diffused Planar Type Silicon Transistor 800/3A Switching Regulator Applications Features High breakdown voltage and high reliability. Fast switching speed (t f : 0.1µs typ). Wide ASO. Adoption of MBIT process. Package Dimensions unit:mm 2010C [] Specifications Absolute Maximum at Ta = 25 C -to-base oltage CBO 1100 oltage CEO 800 Emitter-to-Base oltage EBO 7 Current I C 3 A Current (Pulse) ICP PW 300µs, Duty Cycle 10% 10 A Base Current I B 1. 5 A Dissipation P C Tc=25 C 50 W Junction Temperature Storage Temperature Tj Tstg 150 55 to +150 C C Electrical Characteristics at Ta = 25 C JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : 3 : Emitter C ollector Cutoff Current I CB O CB = 800, IE 10 µ A E mitter Cutoff Current I EB O EB = 5, IC 10 µ A DC Current Gain h FE 1 CE = 5, IC= 0.2A 10* 40* h FE 2 CE = 5, IC Gain-Bandwidth Product f T CE = 10, IC= 0.2A 15 MHz Output Capacitance C ob CB = 10, f=1mhz 60 pf * : The h FE 1 of the is classified as follows. When specifying the h FE 1 rank, specify two ranks or more in principle. 10 K 20 15 L 30 20 M 40 min typ max Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1098HA (KT)/4237AT/N295MW/3085KI/D144MW, TS No.1580 1/4
min Saturation oltage CE(sat) I C = 1.5A, IB= 0.3A 2. 0 Base-to-Emitter Saturation oltage BE(sat) I C = 1.5A, IB= 0.3A 1. 5 -to-base Breakdown oltage ( BR)CBO I C = 1mA, IE 1100 Breakdown oltage ( BR)CEO I C = 5mA, RB E 800 Emitter-to-Base Breakdown oltage ( BR)EBO I E = 1mA, IC 7 Sustain oltage CEX(sus) I C = 1.5A, IB1= IB2= 0.3A, L=2mH, clamped 800 Turn-ON Time t on CC = 400, 5IB1= 2.5IB2 C= 2A, RL= 200Ω 0. 5 µ s S torage Time t st g CC = 400, 5IB1= 2.5IB2 C= 2A, RL= 200Ω 3. 0 µ s Fall Time t f CC = 400, 5IB1= 2.5IB2 C= 2A, RL= 200Ω 0. 3 µ s typ max Switching Time Test Circuit No.1580 2/4
No.1580 3/4