Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage EBO 5. Collector Current Continuous I C 6 madc Total Device Dissipation @ T A = 25 C Derate above 25 C P D 625 5. mw mw/ C 2 BASE COLLECTOR 3 1 EMITTER Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 1.5 12 W mw/ C T J, T stg 55 to +1 C TO92 CASE 29 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 1 2 2 3 3 STRAIGHT LEAD BULK PACK MARKING DIAGRAM BENT LEAD TAPE & REEL AMMO PACK 2N 541 AYWW A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 7 March, 7 Rev. 2 1 Publication Order Number: 2N541/D
ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage (Note 1) (I C = madc, I B = ) (BR)CEO 1 CollectorBase Breakdown oltage (I C = Adc, I E = ) (BR)CBO 16 EmitterBase Breakdown oltage (I E = 1 Adc, I C = ) Collector Cutoff Current ( CB = 1, I E = ) ( CB = 1, I E =, T A = C) Emitter Cutoff Current ( EB = 3., I C = ) ON CHARACTERISTICS (Note 1) DC Current Gain (I C = madc, CE = 5. ) (I C = 1 madc, CE = 5. ) (I C = madc, CE = 5. ) CollectorEmitter Saturation oltage (I C = 1 madc, I B = madc) (I C = madc, I B = 5. madc) BaseEmitter Saturation oltage (I C = 1 madc, I B = madc) (I C = madc, I B = 5. madc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 1 madc, CE = 1, f = MHz) Output Capacitance ( CB = 1, I E =, f = MHz) SmallSignal Current Gain (I C = madc, CE = 1, f = khz) (BR)EBO 5. I CBO I EBO h FE 6 CE(sat) BE(sat) 24 f T C obo 6. h fe 4 nadc MHz pf Noise Figure (I C = 2 Adc, CE = 5., R S = k, f = khz) NF 8. db 1. Pulse Test: Pulse Width s, Duty Cycle 2.%. ORDERING INFORMATION 2N541G Device Package Shipping TO92 (PbFree) Unit / Bulk 2N541RLRAG TO92 (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2
1 T J = 125 C h FE, CURRENT GAIN 55 C 25 C CE = CE = 5..1.3 2. 3. 5. 1 Figure 1. DC Current Gain CE, COLLECTOREMITTER OLTAGE (OLTS).9.8.7.6.4.3.1.5.1 I C = ma.2.5.1 1 ma ma 2. ma 5. 1 I B, BASE CURRENT (ma) Figure 2. Collector Saturation Region 1 3, COLLECTOR CURRENT ( A) μ IC 1 2 1 1 1 1 1 1 2 CE = T J = 125 C 75 C REERSE 25 C I C = I CES FORWARD 1 3.3.1.1.3.4.6.7 BE, BASEEMITTER OLTAGE (OLTS) Figure 3. Collector CutOff Region 3
, OLTAGE (OLTS).9.8.7.6 BE(sat) @ I C /I B = 1.4.3 CE(sat) @ I C /I B = 1.1.1.3 2. 3. 5. 1 Figure 4. On oltages, TEMPERATURE COEFFICIENT (m/ C) θ 2.5 2. T J = 55 C to 135 C 1.5 C for CE(sat) 1.5 2. B for BE(sat) 2.5.1.3 2. 3. 5. 1 Figure 5. Temperature Coefficients BB+ 8.8 CC 1 in 1 s INPUT PULSE t r, t f 1 ns DUTY CYCLE = % 3. k 5 F R B 5.1 k in 1N914 R C out C, CAPACITANCE (pf) 1 7. 5. 3. 2. C ibo C obo alues Shown are for I C @ 1 ma Figure 6. Switching Time Test Circuit.3.7 2. 3. 5. 7. 1 R, REERSE OLTAGE (OLTS) Figure 7. Capacitances t, TIME (ns) I C /I B = 1 t r @ CC = 1 t d @ BE(off) = CC = 1 t r @ CC = 1.3 2. 3. 5. 1 t, TIME (ns) I C /I B = 1 t f @ CC = t s @ CC = 1 t f @ CC = 1.3 2. 3. 5. 1 Figure 8. TurnOn Time Figure 9. TurnOff Time 4
PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.175 4.45 5. B.1 1 4.32 5.33 C.125.165 3.18 4.19 D.16.21.47 33 X X D G.45.55 1.15 1.39 H.95.15 2.42 2.66 G J.15..39. H J K. 12. C L 6.35 N.8.15 2.4 2.66 SECTION XX R.115 2.93 1 N.135 3.43 P. 2.54 R T SEATING PLANE P G A X X 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5. B 4.32 5.33 C 3.18 4.19 D.4 4 G 2.4 2.8 J.39. K 12. N 2.4 2.66 P 1. 4. R 2.93 3.43 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 36752175 or 8344386 Toll Free USA/Canada Fax: 36752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 813577338 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N541/D