2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage V CE(sat) =.6 (Max) @ I C = A Excellent Power Dissipation Due to Thermopad Construction P D = 3 W @ T C = 25 C Excellent Safe Operating Area Gain Specified to I C = A Complement to PNP 2N4918, 2N4919, 2N492 PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage 2N4921 V ÎÎ 2N4922ÎÎÎ CEO 4 ÎÎÎÎ 6 ÎÎÎÎ 2N4923 8 CollectorEmitter Voltage 2N4921 V ÎÎ 2N4922ÎÎÎ CB 4 ÎÎÎÎ 6 ÎÎÎÎ 2N4923 8 Emitter Base Voltage V EB 5. Collector Current Continuous (Note 1) ÎÎÎÎ I C Adc ÎÎÎÎ 3. ÎÎÎÎ ÎÎ Base Current Continuous ÎÎÎ IB ÎÎÎÎ ÎÎÎÎ Adc ÎÎ Total Power Dissipation @ T C = 25 C ÎÎÎ P D ÎÎÎÎ 3 ÎÎÎÎ W Derate above 25 C 4 mw/ C Operating and Storage Junction T ÎÎÎÎ J, T stg 65 to +15 C ÎÎÎÎ ÎÎÎÎ Temperature Range THERMAL CHARACTERISTICS (Note 2) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase ÎÎÎ JC ÎÎÎÎ 4.16 ÎÎÎÎ C/W ÎÎ Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The A maximum I C value is based upon JEDEC current gain requirements. The 3. A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). 2. Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AMPERE GENERAL PURPOSE POWER TRANSISTORS 48 VOLTS, 3 WATTS 3 2 1 TO225 CASE 77 STYLE 1 MARKING DIAGRAM 1 YWW 2 N492xG Y = Year WW = Work Week 2N492x = Device Code x = 1, 2, or 3 G = PbFree Package ORDERING INFORMATION Device Package Shipping 2N4921 TO225 5 Units / Box 2N4921G TO225 5 Units / Box (PbFree) 2N4922 TO225 5 Units / Box 2N4922G TO225 5 Units / Box (PbFree) 2N4923 TO225 5 Units / Box 2N4923G TO225 (PbFree) 5 Units / Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 26 January, 26 Rev. 11 1 Publication Order Number: 2N4921/D
ÎÎ ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol ÎÎÎÎ Min MaxÎÎÎÎ Unit ÎÎ OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V CEO(sus) ÎÎÎÎ (I C = Adc, I B = ) 2N4921 4 2N4922ÎÎÎ 6 ÎÎÎ ÎÎÎÎ 2N4923 ÎÎ 8 ÎÎÎ ÎÎÎÎ Collector Cutoff Current (V CE = 2, I B I CEO ÎÎÎÎ = ) 2N4921.5 (V CE = 3, I B = ) 2N4922ÎÎÎ ÎÎÎ.5 ÎÎÎÎ (V CE = 4, I B = ) 2N4923.5 Î ÎÎÎÎ Collector Cutoff Current I (V CE = Rated V CEO, V EB(off) = 1.5 ) CEX ÎÎÎÎ (V CE = Rated V CEO, V EB(off) = 1.5, T C = 125 C ÎÎÎ ÎÎÎ.5 ÎÎÎÎ Collector Cutoff Current I CBO ÎÎÎÎ (V CB = Rated V CB, I E = ) ÎÎ Emitter Cutoff Current I (V EB = 5., I C = ) EBO ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ON CHARACTERISTICS DC Current Gain (Note 3) h FE ÎÎÎÎ (I C = 5, V CE = ) (I C = 5, V CE ÎÎÎ 4 ÎÎÎ ÎÎÎÎ = ) 3 15 (I C = Adc, V CE = ) ÎÎÎ ÎÎÎ ÎÎÎÎ CollectorEmitter Saturation Voltage (Note 3) V CE(sat) ÎÎÎÎ (I C = Adc, I B = Adc).6 ÎÎ BaseEmitter Saturation Voltage (Note 3) V (I C = Adc, I B = Adc) BE(sat) ÎÎÎÎ ÎÎÎ 1.3 ÎÎÎÎ BaseEmitter On Voltage (Note 3) V BE(on) ÎÎÎÎ (I C = Adc, V CE = ) ÎÎÎ ÎÎÎ 1.3 ÎÎÎÎ ÎÎ SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 25, V CE f T Î =, f = MHz) 3. ÎÎÎÎ MHz ÎÎ Output Capacitance C (V CB =, I E =, f = khz) ob ÎÎÎÎ ÎÎÎ ÎÎÎÎ pf SmallSignal Current Gain h fe ÎÎÎÎ (I C = 25, V CE =, f = khz) 25 ÎÎÎÎ 3. Pulse Test: PW 3 s, Duty Cycle 2.%. *Indicates JEDEC Registered Data. 2
4 P D, POWER DISSIPATION (WATTS) 3 2 25 5 75 125 15 T C, CASE TEMPERATURE ( C) Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. V in APPROX +11 V TURNON PULSE t 1 V CC R C V BE(off) V in R B C jd << C eb APPROX +11 V V in t 2 TURNOFF PULSE t 3 SCOPE APPROX 9. V 4. V t 1 15 ns < t 2 5 s t 3 15 ns DUTY CYCLE 2.% R B and R C varied to obtain desired current levels Figure 2. Switching Time Equivalent Circuit t, TIME ( s) μ 5. 3. 2..7.5 t d V CC = 3 V V CC = 3 V I C /I B = 2 I C /I B =, UNLESS NOTED V CC = 6 V V CC = 6 V V BE(off) = 2. V V CC = 3 V.7 V BE(off) =.5 2 3 5 7 2 3 5 7 Figure 3. TurnOn Time t r 3
f 2N4921, 2N4922, 2N4923 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5.7.5.3.2 D =.5.5.1 SINGLE PULSE JC (t) = r(t) JC JC = 4.16 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2.1.1.2.3.5.5 2. 3. 5. 2 3 5 2 3 5 t, TIME (ms) Figure 4. Thermal Response I C, COLLECTOR CURRENT (AMP) 7. 5. 3. 2..7.5 5. ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ T C = 25 C PULSE CURVES APPLY BELOW RATED V CEO 2. 3. 5. 7. 2 3 5 7 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) dc ms s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) 15 C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. ActiveRegion Safe Operating Area 5. 5. 3. 2. I C /I B = 2 3. 2. I C /I B = 2 t, STORAGE TIME ( s) μ s.7.5.7.5 I C /I B = I B1 = I B2 t s = t s 1/8 t f I C /I B = 2 2 3 5 7 2 3 5 7 t, FALL TIME ( s) μ.7.5.7.5 I C /I B = 2 3 5 7 2 3 5 7 V CC = 3 V I B1 = I B2 Figure 6. Storage Time Figure 7. Fall Time 4
h FE, DC CURRENT GAIN 7 5 3 2 7 5 3 2 25 C 55 C V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 2. 3. 5. 2 3 5 2 3 5 2.5 2. 3. 5. 2 3 5 2 I B, BASE CURRENT (ma) Figure 8. Current Gain V CE = V.8.6.4 I C = A 5 A.5 A A Figure 9. Collector Saturation Region R BE, EXTERNAL BASEEMITTER RESISTANCE (OHMS) 8 7 6 5 4 3 I C = 2 x I CES I C I CES I CES VALUES OBTAINED FROM FIGURE 12 I C = x I CES V CE = 3 V 3 6 9 12 15 VOLTAGE (VOLTS) 1.5 1.2.9 V BE(sat) @ I C /I B =.6 V BE @ V CE = 2. V V CE(sat) @ I C /I B = 2. 3. 5. 2 3 5 2 3 5 2 T J, JUNCTION TEMPERATURE ( C) Figure. Effects of BaseEmitter Resistance Figure 11. On Voltage, COLLECTOR CURRENT ( A) μ I C 4 3 2 1 1 2 REVERSE C I C = I CES 25 C FORWARD + + + +.4 +.5 V BE, BASEEMITTER VOLTAGE (VOLTS) Figure 12. Collector CutOff Region V CE = 3 V TEMPERATURE COEFFICIENTS (mv/ C) + 2.5 + 2. *APPLIES FOR I C /I B h FE @ VCE V + 1.5 2 + T J = C to 15 C +.5 * VC FOR V CE(sat) 55 C to + C.5 1.5 VB FOR V BE 2. 2.5 2. 3. 5. 2 3 5 2 3 5 2 Figure 13. Temperature Coefficients 5
PACKAGE DIMENSIONS TO225 CASE 779 ISSUE Z H Q B U 1 2 3 F A K V G S D 2 PL M 5 (.) M A M B M C J R 5 (.) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 771 THRU 8 OBSOLETE, NEW STANDARD 779. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.425.435.8 14 B 95 5 7.5 7.74 C.95 5 2.42 2.66 D.2.26.51.66 F 15 3 2.93 3.3 G.94 BSC 2.39 BSC H.5.95 1.27 2.41 J.15.25 9.63 K.575.655 14.61 16.63 M 5 TYP 5 TYP Q 48 58 3.76 4.1 R.45.65 1.15 1.65 S.25.35.64.88 U 45 55 3.69 3.93 V.4 2 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85821312 USA Phone: 4882977 or 8344386 Toll Free USA/Canada Fax: 48829779 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 15351 Phone: 8135773385 6 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N4921/D