Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).22 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge I D 2.7 PG-TO247 Type Package Ordering Code SPW2N6CFD PG-TO247 Q674-S4617 Marking 2N6CFD Maximum Ratings Parameter Symbol Value Unit Continuous drain current I D T C = 25 C T C = 1 C 2.7 13.1 Pulsed drain current, t p limited by T jmax I D puls 52 valanche energy, single pulse E S 69 mj I D = 1, V DD = 5 V valanche energy, repetitive t R limited by T jmax 1) E R 1 I D = 2, V DD = 5 V valanche current, repetitive t R limited by T jmax I R 2 Reverse diode dv/dt dv/dt 4 V/ns I S =2.7, V DS =48V, T j =125 C Gate source voltage V GS ±2 V Gate source voltage C (f >1Hz) V GS ±3 Power dissipation, T C = 25 C P tot 28 W Operating and storage temperature T j, T stg -55... +15 C Rev. 2.4 Page 1
Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 8 V/ns V DS = 48 V, I D = 2.7, T j = 125 C Maximum diode commutation speed di F /dt 9 /µs V DS = 48 V, I D = 2.7, T j = 125 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - -.6 K/W Thermal resistance, junction - ambient, leaded R thj - - 62 Soldering temperature, wavesoldering 1.6 mm (.63 in.) from case for 1s T sold - - 26 C Electrical Characteristics, at Tj=25 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS VGS=V, ID=.25m 6 - - V Drain-Source avalanche V (BR)DS V GS =V, I D =2-7 - breakdown voltage Gate threshold voltage V GS(th) ID=1µΑ, VGS=VDS 3 4 5 Zero gate voltage drain current I DSS V DS =6V, V GS =V, µ T j =25 C, T j =15 C - 2.1 - - 17 - Gate-source leakage current I GSS V GS =2V, V DS =V - - 1 n Drain-source on-state resistance R DS(on) VGS=1V, ID=13.1, Ω T j =25 C T j =15 C -.19.22 -.51 - Gate input resistance R G f=1mhz, open Drain -.54 - Rev. 2.4 Page 2
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS 2*I D *R DS(on)max, - 17.5 - S I D =13.1 Input capacitance C iss V GS =V, V DS =25V, - 24 - pf Output capacitance C oss f=1mhz - 78 - Reverse transfer capacitance C rss - 5 - Effective output capacitance,2) C o(er) energy related V GS =V, V DS =V to 48V - 83 - pf Effective output capacitance,3) C o(tr) - 16 - time related Turn-on delay time t d(on) V DD =38V, V GS =/1V, - 12 - ns Rise time t r I D =2.7, R G =3.6Ω - 15 - Turn-off delay time t d(off) - 59 - Fall time t f - 6.4 - Gate Charge Characteristics Gate to source charge Q gs V DD =48V, I D =2.7-15 - nc Gate to drain charge Q gd - 54 - Gate charge total Q g VDD=48V, ID=2.7, - 95 124 V GS = to 1V Gate plateau voltage V (plateau) V DD =48V, I D =2.7-7 - V 1Repetitve avalanche causes additional power losses that can be calculated as P V =E R *f. 2C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev. 2.4 Page 3
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =25 C - - 2.7 forward current Inverse diode direct current, I SM - - 52 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S - 1 1.2 V Reverse recovery time t rr V R =48V, I F =I S, - 15 - ns Reverse recovery charge Q rr di F /dt=1/µs - 1 - µc Peak reverse recovery current I rrm - 13 - Peak rate of fall of reverse di rr /dt - 14 - /µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th1.7686 K/W C th1.3764 Ws/K R th2.15 C th2.1412 R th3.29 C th3.1932 R th4.114 C th4.5299 R th5.136 C th5.12 R th6.59 C th6.91 P tot (t) T j R th1 R th,n T case External Heatsink C th1 C th2 C th,n T amb Rev. 2.4 Page 4
1 Power dissipation P tot = f (T C ) 24 SPW2N6CFD W 2 Safe operating area I D = f ( V DS ) parameter : D =, T C =25 C 2 1 2 18 1 1 P tot 16 14 ID 12 1 1 8 6 4 2-1 1 tp=.1 ms tp=.1 ms tp=.1 ms tp=1 ms DC 2 4 6 8 1 12 C 16 T C 1-2 1 1 1 1 2 V 1 3 V DS 3 Transient thermal impedance Z thjc = f (t p ) parameter: D = tp/t ZthJC 1 K/W 1-1 -2 1-3 1 D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 single pulse 4 Typ. output characteristic I D = f (V DS ); T j =25 C parameter: tp = 1 µs, VGS ID 7 5 4 3 2 Vgs = 1V Vgs = 8V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V 1 1-4 1-7 1-6 1-5 1-4 1-3 1-2 s 1 t p Rev. 2.4 Page 5 4 8 12 16 2 V 28 V DS
5 Typ. output characteristic I D = f (V DS ); T j =15 C parameter: t p = 1 µs, V GS 6 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =15 C, V GS ID 4 3 25 Vgs = 2V Vgs = 7.5V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V RDS(on) 1.5 Ω Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 7V Vgs = 7.5V Vgs = 2V 2.9 15 1.6 5 4 8 12 16 2 V 28 V DS 7 Drain-source on-state resistance R DS(on) = f (T j ) parameter : ID = 13.1, VGS = 1 V.3 5 1 15 2 25 3 4 I D 8 Typ. transfer characteristics I D = f ( V GS ); V DS 2 x I D x R DS(on)max parameter: tp = 1 µs 1.3 SPW2N6CFD Ω 1.1 7 Tj = 25 C 1 RDS(on).9.8.7 ID 5 4 Tj = 15 C.6.5 3.4.3 98% 2.2.1 typ 1-6 -2 2 6 1 C 18 T j Rev. 2.4 Page 6 4 8 12 V 2 V GS
9 Typ. gate charge V GS = f (Q Gate ) parameter: I D = 2.7 pulsed 16 SPW2N6CFD 1 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = 1 µs 1 2 SPW2N6CFD V 12.2 VDS max V GS 1.8 V DS max IF 1 1 8 6 4 2 1 T j = 25 C typ T j = 15 C typ T j = 25 C (98%) T j = 15 C (98%) 2 4 6 8 1 12 nc 15 Q Gate 11 valanche SO I R = f (t R ) par.: Tj 15 C 2 1-1.4.8 1.2 1.6 2 2.4 V 3 V SD 12 valanche energy E S = f (T j ) par.: ID = 1, VDD = 5 V 75 mj 6 55 IR 1 Tj(Start)=25 C ES 5 45 4 35 3 25 5 Tj(Start)=125 C 1-3 1-2 1-1 1 1 1 1 2 µs 1 4 t R Rev. 2.4 Page 7 2 15 1 5 2 4 6 8 1 12 C 16 T j
13 Drain-source breakdown voltage V (BR)DSS = f (T j ) 72 SPW2N6CFD 14 valanche power losses P R = f (f ) parameter: E R =1mJ 5 V W V (BR)DSS 68 66 64 P R 3 62 2 6 58 1 56 54-6 -2 2 6 1 C 18 T j 1 4 1 5 Hz 1 6 f 15 Typ. capacitances C = f (V DS ) parameter: VGS=V, f=1 MHz 5 1 pf 16 Typ. C oss stored energy E oss =f(v DS ) 14 µj C 1 4 Ciss Eoss 1 8 3 1 6 2 1 Coss 4 2 1 1 Crss 1 2 3 4 V 6 V DS Rev. 2.4 Page 8 1 2 3 4 V 6 V DS
17 Typ. reverse recovery charge Q rr = f(t J ) parameter: I D = 2.7 18 Typ. reverse recovery charge Q rr = f(i D ) parameter: di/dt = 1 /µs Qrr [nc] 18 17 16 15 Qrr [nc] 18 17 16 15 14 13 12 Tj = 125 C 14 13 12 11 11 1 9 8 7 6 5 Tj = 25 C 1 25 5 75 C 125 T j 4 2 4 6 8 1 12 14 16 2 I D 19 Typ. reverse recovery charge Q rr = f(di/dt) parameter: ID = 2.7 34 32 3 Tj = 125 C Qrr [nc] 28 26 24 22 Tj = 25 C 2 18 16 14 12 1 1 2 3 4 5 6 7 /µs 9 di/dt Rev. 2.4 Page 9
Definition of diodes switching characteristics Rev. 2.4 Page 1
6 FD G Rev. 2.4 P 1 5 6 28
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