Advance Technical Information Linear L2 TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTN2N1L2 S = V I D25 = 178A R DS(on) 11mΩ minibloc, SOT-227 E153432 Symbol Test Conditions Maximum Ratings S = 25 C to 15 C V V DGR = 25 C to 15 C, R GS = 1MΩ V S Continuous ±2 V M Transient ±3 V I D25 = 25 C 178 A I DM = 25 C, Pulse Width Limited by M 5 A I A = 25 C A E AS = 25 C 5 J P D = 25 C 83 W -55... +15 C M 15 C T stg -55... +15 C T L 1.6mm (.62 in.) from Case for 1s 3 C T SOLD Plastic Body for 1s 26 C V ISOL 5/6 Hz, RMS t = 1 Minute 25 V~ I ISOL 1mA t = 1 Second 3 V~ M d Mounting Torque 1.5/13 Nm/lb.in. Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 3 g Features G G = Gate S = Source S Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. MiniBLOC with Aluminium Nitride Isolation Designed for Linear Operation International Standard Package Guaranteed FBSOA at 75 C Avalanche Rated Molding Epoxy Meets UL94 V- Flammability Classification D D = Drain S Advantages ( BS = V = 1mA V (th) = = 3mA 2. 4.5 V I GSS = ±2V, = V ±2 na I DSS = S, = V 1 μa = 125 C 25 μa R DS(on) = 1V = A, Note 1 11 mω Easy to Mount Space Savings High Power Density Applications Programmable Loads Current Regulators DC-DC Converters Battery Chargers DC Choppers Temperature and Lighting Controls 21 IXYS CORPORATION, All Rights Reserved DS238(2/1)
IXTN2N1L2 ( g fs = 1V = 6A, Note 1 55 73 9 S C iss 23 nf C oss = V, = 25V, f = 1MHz 32 pf C rss 61 pf t d(on) 4 ns Resistive Switching Times t r 225 ns V t GS = 1V, =.5 S = A d(off) 127 ns R t G = 1Ω (External) f 27 ns Q g(on) 54 nc Q gs = 1V, =.5 S = A 115 nc Q gd 226 nc SOT-227B (IXTN) Outline (M4 screws (4x) supplied) R thjc.15 C/W R thcs.5 C/W Safe-Operating-Area Specification Min. Typ. Max. SOA = V = 5A, = 75 C, tp = 5s 5 W Source-Drain Diode ( I S = V 2 A I SM Repetitive, Pulse Width Limited by M 8 A V SD I F = A, = V, Note 1 1.4 V t rr 245 ns I I F = A, -di/dt = A/μs RM 24.4 A V Q R = 5V, V = V GS RM 3. μc Note 1. Pulse test, t 3μs, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXTN2N1L2 2 18 16 14 12 8 6 4 Fig. 1. Output Characteristics @ = 25ºC = 2V 14V 1V 2 4V..2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 7V 35 3 25 2 15 5 Fig. 2. Extended Output Characteristics @ = 25ºC = 2V 1V 7V 2 4 6 8 1 12 14 16 18 Fig. 3. Output Characteristics @ = 125ºC Fig. 4. R DS(on) Normalized to I D = A Value vs. Junction Temperature 2 18 16 = 2V 14V 1V 2.8 2.4 = 1V 14 12 8 6 RDS(on) - Normalized 2. 1.6 1.2 I D = 2A I D = A 4 2 4V..5 1. 1.5 2. 2.5 3. 3.5 4..8.4-5 -25 25 5 75 125 15 - Degrees Centigrade 2.4 Fig. 5. R DS(on) Normalized to I D = A Value vs. Drain Current 2 Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 = 1V 2V - - - - = 125ºC 18 2. 16 RDS(on) - Normalized 1.8 1.6 1.4 1.2 = 25ºC 14 12 8 6 1. 4.8 2.6 4 8 12 16 2 24 28 32 I D - Amperes -5-25 25 5 75 125 15 - Degrees Centigrade 21 IXYS CORPORATION, All Rights Reserved
IXTN2N1L2 Fig. 7. Input Admittance Fig. 8. Transconductance 2 18 16 14 12 8 6 = 125ºC 25ºC - 4ºC g f s - Siemens 14 12 8 6 4 = - 4ºC 25ºC 125ºC 4 2 2 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. - Volts 2 4 6 8 12 14 16 18 2 22 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 1. Gate Charge 32 16 28 24 14 12 = 5V I D = A I G = 1mA IS - Amperes 2 16 12 VGS - Volts 1 8 6 8 4 = 125ºC = 25ºC 4 2.3.4.5.6.7.8.9 1. 1.1 1.2 1.3 1.4 V SD - Volts 2 3 4 5 6 7 8 Q G - NanoCoulombs, f = 1 MHz Fig. 11. Capacitance 1. Fig. 12. Maximum Transient Thermal Impedance Capacitance - PicoFarads 1, 1, C iss C oss Z(th)JC - ºC / W..1 C rss 5 1 15 2 25 3 35 4.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTN2N1L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ = 25ºC @ = 75ºC 1, 1, R DS(on) Limit 25µs R DS(on) Limit µs 25µs µs 1 1ms 1ms ms DC 1 1ms 1ms ms DC = 15ºC = 25ºC Single Pulse = 15ºC = 75ºC Single Pulse 1 1 1 1 1 1 21 IXYS CORPORATION, All Rights Reserved IXYS REF: T_2N1L2(9R)1-26-1