pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify esign (See pp. Note N0) l Fully Characterized valanche Voltage and Current S S S G 8 2 7 3 6 4 5 Top View SO-8 bsolute Maximum Ratings Parameter Max. Units I @ T = 25 C Continuous rain Current, V GS @ V -2.2 I @ T = 70 C Continuous rain Current, V GS @ V -.9 I M Pulsed rain Current -9 P @T = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak iode Recovery dv/dt 7.8 V/ns T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case ) C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient 50 C/W Notes through are on page 8 www.irf.com 06/06/05
IRF626PbF Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -50 V V GS = 0V, I = -250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient -0.7 V/ C Reference to 25 C, I = -m ƒ R S(on) Static rain-to-source On-Resistance 0.240 Ω V GS = -V, I = -.3 ƒ V GS(th) Gate Threshold Voltage -3.0-5.0 V V S = V GS, I = -250µ I SS rain-to-source Leakage Current -25 V S = -50V, V GS = 0V µ -250 V S = -20V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -0 V GS = -20V n Gate-to-Source Reverse Leakage 0 V GS = 20V ynamic @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 2.7 S V S = -50V, I = -.3 Q g Total Gate Charge 33 49 I = -.3 Q gs Gate-to-Source Charge 7.2 nc V S = -20V Q gd Gate-to-rain ("Miller") Charge 5 23 V GS = -V, t d(on) Turn-On elay Time 8 V = -75V t r Rise Time 5 ns I = -.3 t d(off) Turn-Off elay Time 33 R G = 6.5Ω t f Fall Time 26 V GS = -V ƒ C iss Input Capacitance 280 V GS = 0V C oss Output Capacitance 220 V S = -25V C rss Reverse Transfer Capacitance 53 pf ƒ =.0MHz C oss Output Capacitance 290 V GS = 0V, V S = -.0V, ƒ =.0MHz C oss Output Capacitance 99 V GS = 0V, V S = -20V, ƒ =.0MHz C oss eff. Effective Output Capacitance 220 V GS = 0V, V S = 0V to -20V valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy 200 mj I R valanche Current -4.0 iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.2 (Body iode) showing the I SM Pulsed Source Current integral reverse G -9 (Body iode) p-n junction diode. V S iode Forward Voltage -.6 V T J = 25 C, I S = -.3, V GS = 0V ƒ t rr Reverse Recovery Time 80 20 ns T J = 25 C, I F = -.3 Q rr Reverse RecoveryCharge 3 460 nc di/dt = -0/µs ƒ 2 www.irf.com S
IRF626PbF -I, rain-to-source Current () 0 0. TOP BOTTOM VGS -5V -2V -V -8.0V -7.0V -6.0V -5.5V -5.0V -5.0V -I, rain-to-source Current () 0 TOP BOTTOM VGS -5V -2V -V -8.0V -7.0V -6.0V -5.5V -5.0V -5.0V 20µs PULSE WITH T J = 25 C 0.0 0. 0 -V S, rain-to-source Voltage (V) 20µs PULSE WITH T J = 50 C 0. 0. 0 -V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 2.5 I = -2.2 -I, rain-to-source Current () T J = 25 C T = 50 J C V S= -50V 20µs PULSE WITH 0. 5.0 5.5 6.0 6.5 7.0 7.5 8.0 -V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0.5.0 0.5 V GS = -V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
-I, rain-to-source Current () C, Capacitance(pF) IRF626PbF 000 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd Ciss Coss Crss -V GS, Gate-to-Source Voltage (V) 2 8 6 4 2 I = -.3 V S = -20V V S = -75V V S = -30V 0 00 -V S, rain-to-source Voltage (V) Fig 5. Typical Capacitance Vs. rain-to-source Voltage 0 0 5 5 20 25 30 35 Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 0 0 OPERTION IN THIS RE LIMITE BY R S (on) -I S, Reverse rain Current () T = 50 J C T = 25 J C V GS= 0 V 0. 0.4 0.6 0.8.0.2 -V S,Source-to-rain Voltage (V) 0. Tc = 25 C Tj = 50 C Single Pulse 0µsec msec msec 0 00 -V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
IRF626PbF 2.5 V S R -I, rain Current () 2.0.5.0 0.5 0.0 25 50 75 0 25 50 T, Case Temperature ( C C) Fig 9. Maximum rain Current Vs. mbient Temperature R G Fig a. Switching Time Test Circuit V S 90% V GS V GS Pulse Width µs uty Factor 0. %.U.T. % V GS t d(on) t r t d(off) t f + - V Fig b. Switching Time Waveforms 0 Thermal Response (Z thj ) = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) 2. Peak T J = P M x Z thj + T 0. 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse uration (sec) Notes:. uty factor = t / t 2 P M t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient www.irf.com 5
R S (on), rain-to-source On Resistance ( Ω) IRF626PbF 0.23.50 0.22 0.2 V GS = -V R S(on), rain-to -Source On Resistance (Ω).00 0.20 0.50 I = -2.2 0.9 0 2 4 6 8 2 4 6 8 0.00 4.5 6.0 7.5 9.0.5 2.0 3.5 5.0 -V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 50KΩ -V GS Q G 2V.2µF.3µF Q GS Q G 500 I V GS -3m.U.T. - + V S V G Charge 400 TOP BOTTOM -.8-3.2-4.0 I S I G I Current Sampling Resistors Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V (BR)SS R G VS -20V tp L.U.T IS 0.0Ω RIVER 5V V E S, Single Pulse valanche Energy (mj) 300 200 0 0 25 50 75 0 25 50 Starting Tj, Junction Temperature ( C) Fig 5a&b. Unclamped Inductive Test circuit Fig 5c. Maximum valanche Energy and Waveforms Vs. rain Current 6 www.irf.com
IRF626PbF SO-8 Package Outline imensions are shown in millimeters (inches) E 6 6X 8 7 2 e 5 6 5 3 4 B H 0.25 [.0] IM INCHES MILLIMET ERS MIN MX MIN MX.0532.0040.0688.0098.35 0..75 0.25 b.03.020 0.33 0.5 c.0075.0098 0.9 0.25 E e e H K L y.89.968.497.574.050 BS IC.27 BS IC.025 BS IC 0.635 BS IC.2284.2440.0099.096.06.050 0 8 4.80 5.00 3.80 4.00 5.80 6.20 0.25 0.50 0.40.27 0 8 e C y K x 45 8X b 0.25 [.0] C B 0. [.004] NOTES:. IMENSIONING & TOLERNCING PER S ME Y4.5M-994. 2. CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE S HOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS -02. 5 IMENSION OES NOT INCLUE MOL PROT RUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROT RUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO S UBSTRT E. 8X L 7 6.46 [.255] 3X.27 [.050] 8X c FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: T HIS IS N IRF7 (MOS FET ) INTERNTIONL RECTIFIER LOGO XXXX F7 T E COE (YWW) P = E S IGNT E S LE -F RE E PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WE E K = S S E MB L Y S IT E COE LOT COE PRT NUMBER www.irf.com 7
IRF626PbF SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 25mH R G = 25Ω, I S = -4.0. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.06/05 8 www.irf.com