TrenchT3 TM HiperFET TM Power MOSFET Advance Technical Information IXFA27N6T3 IXFP27N6T3 IXFH27N6T3 V SS I 25 R S(on) = 6V = 27A 3.1m N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier TO-263 AA (IXFA) Symbol Test Conditions Maximum Ratings V SS = 25 C to 175 C 6 V V GR = 25 C to 175 C, R GS = 1M 6 V G S TO-22AB (IXFP) (Tab) M Transient 2 V I 25 = 25 C 27 A I LRMS Lead Current Limit, RMS 16 A I M = 25 C, Pulse Width Limited by M 675 A I A = 25 C 135 A E AS = 25 C 1.5 J P = 25 C 8 W -55... +175 C M 175 C T stg -55... +175 C T L Maximum Lead Temperature for Soldering 3 C T SOL Plastic Body for 1s 26 C F C Mounting Force (TO-263) 1..65 / 2.2..1.6 N/lb M d Mounting Torque (TO-22 & TO-27) 1.13 / 1 m/lb.in Weight TO-263 2.5 g TO-22 3. g TO-27 6. g Features G S TO-27 (IXFH) G S (Tab) (Tab) G = Gate = rain S = Source Tab = rain International Standard Packages 175 C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low R S(on) Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. BV SS = V, I = 25 A 6 V (th) V S =, I = 25 A 2.. V I GSS = 2V, V S = V 2 na I SS V S = V SS, = V 1 A = 15 C 1.5 ma R S(on) = 1V, I = 1A, Notes 1, 2 3.1 m Advantages Easy to Mount Space Savings High Power ensity Applications C-C Converters & Off-Line UPS Primary-Side Switch High Current Switching Applications 216 IXYS CORPORATION, All Rights Reserved S1698A(1/16)
Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. g fs V S = 1V, I = 6A, Note 1 83 138 S C iss 12.6 nf C oss = V, V S = 25V, f = 1MHz 138 pf C rss 62 pf R Gi Gate Input Resistance 1.1 t d(on) 39 ns Resistive Switching Times t r 36 ns = 1V, V S =.5 V SS, I =.5 I 25 8 ns R G = 3 (External) 2 ns Q g(on) 2 nc Q gs = 1V, V S =.5 V SS, I =.5 I 25 68 nc Q gd nc R thjc.31 C/W R thcs TO-22.5 C/W TO-27.21 C/W IXFA27N6T3 IXFP27N6T3 IXFH27N6T3 Source-rain iode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. I S = V 27 A I SM Repetitive, Pulse Width Limited by M 18 A V S I F = 1A, = V, Note 1 1. V t rr I F = 135A, = V 7 ns I RM -di/dt = 1A/ s 23 A Q RM V R = V 53 nc Notes: 1. Pulse test, t 3 s, duty cycle, d 2%. 2. On through-hole packages, R S(on) Kelvin test contact location must be 5mm or less from the package body. AVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and imensions. IXYS MOSFETs and IGBTs are covered,835,592,931,8 5,9,961 5,237,81 6,162,665 6,,65 B1 6,683,3 6,727,585 7,5,73 B2 7,157,338B2 by one or more of the following U.S. patents:,86,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,53,33 6,71,5 B2 6,759,692 7,63,975 B2,881,16 5,3,796 5,187,117 5,86,715 6,36,728 B1 6,583,55 6,71,63 6,771,78 B2 7,71,537
IXFA27N6T3 IXFP27N6T3 IXFH27N6T3 Fig. 1. Output Characteristics @ Fig. 2. Extended Output Characteristics @ 28 2 = 15V 1V 9V 8V 35 3 = 1V 7V 2 16 12 7V 6V 25 2 15 6.5V 6V 8 1 5V 5 5V.1.2.3..5.6.7.8.9 1 2 3 5 6 7 8 9 1 28 2 2 16 12 8 Fig. 3. Output Characteristics @ = 15ºC = 15V 1V 9V 8V V.2..6.8 1 1.2 1. 1.6 1.8 7V 6V 5V RS(on) - Normalized 2.2 2. 1.8 1.6 1. 1.2 1..8 Fig.. Normalized R S(on) to Value vs. Junction Temperature = 1V I = 27A.6-5 -25 25 5 75 1 125 15 175 - egrees Centigrade 2. Fig. 5. Normalized R S(on) to vs. rain Current 18 Fig. 6. rain Current vs. Case Temperature 2.2 = 1V 15V 16 External Lead Current Limit 2. 1 RS(on) - Normalized 1.8 1.6 1. = 175ºC 12 1 8 6 1.2 1. 2.8 8 12 16 2 2 28 I - Amperes -5-25 25 5 75 1 125 15 175 - egrees Centigrade 216 IXYS CORPORATION, All Rights Reserved
IXFA27N6T3 IXFP27N6T3 IXFH27N6T3 Fig. 7. Input Admittance Fig. 8. Transconductance 16 28 1 V S = 1V 2 V S = 1V = - ºC 12 2 1 8 6 = 15ºC g f s - Siemens 16 12 25ºC 15ºC 2 25ºC - ºC 8 3. 3.5..5 5. 5.5 6. 6.5 - Volts 2 6 8 1 12 1 16 I - Amperes Fig. 9. Forward Voltage rop of Intrinsic iode Fig. 1. Gate Charge 3 1 9 V S = 3V 25 8 I G = 1mA IS - Amperes 2 15 1 5 = 15ºC VGS - Volts 7 6 5 3 2 1.3..5.6.7.8.9 1. 1.1 1.2 V S - Volts 2 6 8 1 12 1 16 18 2 Q G - NanoCoulombs 1 f = 1 MHz Fig. 11. Capacitance 1 R S(on) Limit Fig. 12. Forward-Bias Safe Operating Area Ciss Capacitance - PicoFarads 1 1 1 Coss Crss 1 1 1 External Lead Limit = 175ºC = 25ºC Single Pulse C 1µs 1ms 1ms 1 5 1 15 2 25 3 35.1 1 1 1 IXYS Reserves the Right to Change Limits, Test Conditions, and imensions.
IXFA27N6T3 IXFP27N6T3 IXFH27N6T3 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 1. Resistive Turn-on Rise Time vs. rain Current 39 39 R G = 3Ω, = 1V V S = 3V 38 R G = 3Ω, = 1V V S = 3V 38 37 t r - Nanoseconds 37 36 35 3 I = 27A t r - Nanoseconds 36 35 3 = 15ºC 33 33 32 25 5 75 1 125 15 - egrees Centigrade 32 12 1 16 18 2 22 2 26 28 I - Amperes 6 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 15 23 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 65 t r t d(on) 5 = 15ºC, = 1V V S = 3V 125 22 R G = 3Ω, = 1V V S = 3V 6 t r - Nanoseconds 3 2 I = 27A 1 75 5 t d(on) - Nanoseconds - Nanoseconds 21 2 I = 27A 55 5 - Nanoseconds 1 25 19 5 2 6 8 1 12 1 16 18 R G - Ohms 18 25 5 75 1 125 15 - egrees Centigrade 23 Fig. 17. Resistive Turn-off Switching Times vs. rain Current 7 3 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 3 I = 27A, 135A R G = 3Ω, = 1V 25 = 15ºC, = 1V 25 - Nanoseconds 22 21 2 = 15ºC V S = 3V 6 5 - Nanoseconds - Nanoseconds 2 15 1 5 V S = 3V I = 27A 2 15 1 5 - Nanoseconds 19 3 12 1 16 18 2 22 2 26 28 I - Amperes 2 6 8 1 12 1 16 18 R G - Ohms 216 IXYS CORPORATION, All Rights Reserved
IXFA27N6T3 IXFP27N6T3 IXFH27N6T3 1 Fig. 19. Maximum Transient Thermal Impedance Z(th)JC - K / W.1.1.1.1.1.1.1.1 1 1 Pulse Width - Seconds TO-263 Outline E L2 c2 A E1 TO-22 Outline E P A A1 Q TO-27 Outline E E2/2 A A2 R P 1 2 3 e 1 = Gate 2, = rain 3 = Source b2 b L - 8 c L A1 L3 1 EJECTOR PIN e 1 2 3 e1 Q 1 L c H1 A2 3X b 3X b2 1 = Gate 2, = rain 3 = Source (2) (E1) E2 b2 1 2 3 b e b L c A1 S W BOTTOM FLATNESS 1 = Gate 2, = rain 3 = Source U T IXYS Reserves the Right to Change Limits, Test Conditions, and imensions. IXYS REF: F_27N6T3(U6-M5) 1-27-16