2MBI225VN-2-5 IGBT MODULE (V series) 2V / 225A / 2 in one package Inverter Inverter Thermistor Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 2 V Gate-Emitter voltage VGES ±2 V Ic Continuous Tc=25 C 3 Tc= C 225 Collector current Ic pulse ms 45 A -Ic 225 -Ic pulse ms 45 Collector power dissipation Pc device 7 W Junction temperature Tj 75 Operating junction temperature (under switching conditions) Tjop 5 Case temperature TC 25 C Storage temperature Tstg -4 to +25 Isolation voltage between terminal and copper base (*) between thermistor and others (*2) Viso AC : min. 25 VAC Screw torque Mounting (*3) 3.5 - Terminals (*4) 4.5 N m Note *: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj= 25 C unless otherwise specified) Items Symbols Conditions Characteristics min. typ. max. Units Zero gate voltage collector current ICES VGE = V, VCE = 2V - - 3. ma Gate-Emitter leakage current IGES VCE = V, VGE = ±2V - - 6 na Gate-Emitter threshold voltage VGE (th) VCE = 2V, IC = 225mA 6. 6.5 7. V Collector-Emitter saturation voltage Tj=25 C - 2.2 2.65 VCE (sat) Tj=25 C - 2.55 - (terminal) VGE = 5V Tj=5 C - 2.6 - IC = 225A Tj=25 C -.85 2.3 VCE (sat) Tj=25 C - 2.2 - (chip) Tj=5 C - 2.25 - V Internal gate resistance Rg(int) - - 3.33 - Ω Input capacitance Cies VCE = V, VGE = V, f = MHz - 8 - nf ton VCC = 6V - 55 - Turn-on time tr IC = 225A - 8 - tr (i) VGE = ±5V - 2 - nsec Turn-off time toff RG =.6Ω - 5 - tf LS = 8nH - - Forward on voltage Tj=25 C - 2.5 2.5 VF Tj=25 C - 2.2 - (terminal) VGE = V Tj=5 C - 2.5 - IF = 225A Tj=25 C -.7 2.5 VF Tj=25 C -.85 - (chip) Tj=5 C -.8 - V Reverse recovery time trr IF = 225A - 2 - nsec Resistance R T=25 C - 5 - T= C 465 495 52 Ω B value B T=25/5 C 335 3375 345 K 7286a MARCH 24
2MBI225VN-2-5 Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. max. Inverter IGBT - -.4 Thermal resistance (device) Rth(j-c) Inverter FWD - -.9 Contact thermal resistance (device) (*5) Rth(c-f) with Thermal Compound -.67 - Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. Units C/W 2
2MBI225VN-2-5 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 5 C / chip 5 5 C o l l e c t o r c u r r e n t : I c [ A ] 4 3 2 VGE=2V 5V 2V V 8V 2 3 4 5 C o l l e c t o r c u r r e n t : I c [ A ] 4 3 2 VGE= 2V 5V 2V V 8V 2 3 4 5 Collector current vs. Collector-Emitter voltage (typ.) VGE= 5V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25 C / chip 5 Tj=25 C 25 C C o l l e c t o r C u r r e n t : I c [ A ] 4 3 2 5 C C o l l e c t o r - E m i t t e r V o l t a g e : V CE [V] 8 6 4 2 Ic=45A Ic=225A Ic=2A 2 3 4 5 5 5 2 25 Collector-Emitter Voltage: VCE [V] Gate-Emitter Voltage: VGE [V] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= V, ƒ= MHz, Tj= 25 C Dynamic Gate Charge (typ.) Vcc=6V, Ic=225A, Tj= 25 C G a t e C a p a c i t a n c e : C i e s, C o e s, C r e s [ n F ] Cies Coes Cres. 5 5 2 25 3 Gate-Emitter voltage: VGE [V] 2 5 5-5 - -5 VCE VGE 8 6 4 2-2 -4-6 -2-8 -2-2 Gate charge: Qg [nc] 3
2MBI225VN-2-5 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=6V, VGE=±5V, Rg=.6Ω, Tj=25 C Vcc=6V, VGE=±5V, Rg=.6Ω, Tj=25 C, 5 C S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] toff ton tr tf 2 3 4 5 S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] Tj=5 o C toff ton 2 3 4 5 tr tf Switching time vs. Gate resistance (typ.) Vcc=6V, Ic=225A, VGE=±5V, Tj=25 C, 5 C Switching loss vs. Collector current (typ.) Vcc=6V, VGE=±5V, Rg=.6Ω, Tj=25 C, 5 C S w i t c h i n g t i m e : t o n, t r, t o f f, t f [ n s e c ] Tj=5 o C toff ton tr tf. S w i t c h i n g l o s s : E o n, E o f f, E r r [ m J / p u l s e ] 8 6 4 2 Tj=5 o C Eoff Err Eon 2 3 4 5 Gate resistance: Rg [Ω] Switching loss vs. Gate resistance (typ.) Vcc=6V, Ic=225A, VGE=±5V, Tj=25 C, 5 C Reverse bias safe operating area (max.) +VGE=5V, -VGE=5V, Rg=.6 Ω, Tj=5 C S w i t c h i n g l o s s : E o n, E o f f, E r r [ m J / p u l s e ] 5 5 Tj=5 o C.... Gate resistance: Rg [Ω] Eon Eoff Err 6 5 4 3 2 Notice) Switching characteristics of VCE is defined between Sense C and Sense E for Upper arm and Sense E and Sense E2 for Lower arm. 5 5 4
2MBI225VN-2-5 5 Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) Vcc=6V, VGE=±5V, Rg=.6Ω, Tj=25 C F o r w a r d c u r r e n t : I F [ A ] 4 3 2 5 C Tj=25 C 25 C R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ] R e v e r s e r e c o v e r y t im e : t r r [ n s e c ] Irr trr 2 3 2 3 4 5 Forward on voltage: VF [V] Forward current: IF [A] R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ] R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ] Reverse Recovery Characteristics (typ.) Vcc=6V, VGE=±5V, Rg=.6Ω, Tj=25 C, 5 C Tj=5 o C 2 3 4 5 Irr trr Thermal resistanse: Rth(j-c) [ C/W] *** Transient Thermal Resistance (max.).. FWD IGBT τ [sec].232.37.5976.782 Rth IGBT.52.387.5379.333 [ C/W] FWD.238.567.7299.4496.... Forward current: IF [A] Pulse Width : Pw [sec] [THERMISTOR] Temperature characteristic (typ.) FWD safe operating area (max.) Tj=5 C 5 R e s i s t a n c e : R [ k Ω ]. -6-4 -2 2 4 6 8 2 4 6 Reverse recovery current: Irr [A] 4 3 2 Notice) Switching characteristics of VCE is defined between Sense C and Sense E for Upper arm and Sense E and Sense E2 for Lower arm. Pmax=225kW 5 5 Temperature [ C] 5
2MBI225VN-2-5 Outline Drawings (Unit : mm) OUT N P Weight: 3g (typ.) Equivalent Circuit [ Inverter ] [ Thermistor ] C P T T2 G E OUT G2 E2 N 6
2MBI225VN-2-5 WARNING. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 24. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright 996-24 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7