FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology T Jmax = 7 C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are PbFree Devices Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V CES V Collector current @ TC = C @ TC = C I C Pulsed collector current, T pulse I CM A limited by T Jmax Diode forward current @ TC = C @ TC = C I F Diode pulsed current, T pulse limited I FM A by T Jmax Gateemitter voltage Transient gateemitter voltage (T pulse = s, D <.) Power Dissipation @ TC = C @ TC = C V GE ± ± P D 7 Operating junction temperature range T J to +7 C Storage temperature range T stg to +7 C Lead temperature for soldering, / from case for seconds A A V W T SLD C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. C E E G A, V V CEsat =.7 V E off =. mj TO7L CASE CJ ORDERING INFORMATION Device Package Shipping FGHTSQDNL G C MARKING DIAGRAM FGHT SQDNL E TO7 (PbFree) Units / Rail Semiconductor Components Industries, LLC, 7 March, Rev. Publication Order Number: FGHTSQDNL/D
FGHTSQDNL THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R JC. C/W Thermal resistance junctiontocase, for Diode R JC. C/W Thermal resistance junctiontoambient R JA C/W ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited Collectoremitter saturation voltage V GE = V, I C = A V (BR)CES * V GE = V, I C = A V GE = V, I C = A, T J = 7 C V CEsat V Gateemitter threshold voltage V GE = V CE, I C = A V GE(th)... V Collectoremitter cutoff current, gate V GE = V, V CE = V I CES. ma emitter shortcircuited V GE = V, V CE = V, T J = 7 C. Gate leakage current, collectoremitter shortcircuited.7..9 V GE = V, V CE = V I GES na * Guaranteed by design. Input capacitance C ies pf Output capacitance V CE = V, V GE = V, f = MHz C oes Reverse transfer capacitance C res Gate charge total Q g nc Gate to emitter charge V CE = V, I C = A, V GE = V Q ge Gate to collector charge Q gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t d(on) ns Rise time t r Turnoff delay time T J = C t d(off) Fall time V CC = V, I C = A R g = t f Turnon switching loss V GE = to V E on. mj Turnoff switching loss E off. Total switching loss E ts. Turnon delay time t d(on) 7 ns Rise time t r Turnoff delay time T J = 7 C t d(off) Fall time V CC = V, I C = A R g = t f Turnon switching loss V GE = to V E on.7 mj Turnoff switching loss E off. Total switching loss E ts. DIODE CHARACTERISTIC Forward voltage V GE = V, I F = A V GE = V, I F = A, T J = 7 C Reverse recovery time T J = C t rr ns Reverse recovery charge I F = A, V R = V Q rr.7 c Reverse recovery current di F /dt = A/ s I rrm 9. A Reverse recovery time T J = C t rr 9 ns Reverse recovery charge I F = A, V R = V Q rr. c Reverse recovery current di F /dt = A/ s I rrm A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. V F... V V
FGHTSQDNL TYPICAL CHARACTERISTICS T J = C V GE = V V V 7 V 7 V 9 V V V GE = V V T J = C 7 V V V 9 V V 7 Figure. Output Characteristics Figure. Output Characteristics V GE = V V T J = C 7 V V 9 V 7 V and V T J = 7 C V GE = V V 7 V 7 V V 9 V V Figure. Output Characteristics Figure. Output Characteristics T J = C T J = 7 C...... 7 I C = 7 A I C = A I C = A 7 7 V GE, GATEEMITTER VOLTAGE (V) T J, JUNCTION TEMPERATURE ( C) Figure. Typical Transfer Characteristics Figure. V CE(sat) vs. T J
FGHTSQDNL TYPICAL CHARACTERISTICS CAPACITANCE (pf), C ies C oes 7 9 Figure 7. Typical Capacitance T J = C I F, FORWARD CURRENT (A) 9 7 C res T J = 7 C T J = C......... V F, FORWARD VOLTAGE (V) Figure. Diode Forward Characteristics V GE, GATEEMITTER VOLTAGE (V) V CE = V V GE = V I C = A SWITCHING LOSS (mj)...... V CE = V V GE = V I C = A Rg = E on E off Q G, GATE CHARGE (nc) T J, JUNCTION TEMPERATURE ( C) Figure 9. Typical Gate Charge Figure. Switching Loss vs. Temperature SWITCHING TIME ( s) V CE = V V GE = V I C = A Rg = t d(off) t f t r t d(on) SWITCHING LOSS (mj) V CE = V V GE = V T J = 7 C Rg = E on E off 7 9 T J, JUNCTION TEMPERATURE ( C) Figure. Switching Time vs. Temperature Figure. Switching Loss vs. IC
FGHTSQDNL TYPICAL CHARACTERISTICS SWITCHING TIME (ns) V CE = V V GE = V T J = 7 C Rg = 7 t d(off) t d(on) t f t r 9 SWITCHING LOSS (mj) 9 7 V CE = V V GE = V T J = 7 C I C = A E on E off 7 R G, GATE RESISTOR ( ) Figure. Switching Time vs. IC Figure. Switching Loss vs. RG SWITCHING TIME (ns) t d(off) t f t r t d(on) V CE = V V GE = V T J = 7 C I C = A 7 SWITCHING LOSS (mj)........ V GE = V T J = 7 C I C = A Rg = E on E off 7 7 R G, GATE RESISTOR ( ) Figure. Switching Time vs. RG Figure. Switching Loss vs. V CE SWITCHING TIME (ns) t f t d(off) t r t d(on) V GE = V T J = 7 C I C = A Rg = 7 7. dc operation Single Nonrepetitive Pulse T C = C Curves must be derated linearly with increase in temperature K s s ms K Figure 7. Switching Time vs. V CE Figure. Safe Operating Area
FGHTSQDNL TYPICAL CHARACTERISTICS V GE = V, T C = 7 C K K Figure 9. Reverse Bias Safe Operating Area t rr, REVERSE RECOVERY TIME (ns) T J = C, I F = A T J = 7 C, I F = A di F /dt, DIODE CURRENT SLOPE (A/ s) Figure. t rr vs. di F /dt V R = V 7 9 Q rr, REVERSE RECOVERY CHARGE ( C)....... V R = V T J = 7 C, I F = A T J = C, I F = A 7 9 I rm, REVERSE RECOVERY CURRENT (A) V R = V T J = 7 C, I F = A T J = C, I F = A 7 9 di F /dt, DIODE CURRENT SLOPE (A/ s) di F /dt, DIODE CURRENT SLOPE (A/ s) Figure. Q rr vs. di F /dt Figure. I rm vs. di F /dt. V F, FORWARD VOLTAGE (V)...... I C = 7 A I C = A I C = A. 7 7 T J, JUNCTION TEMPERATURE ( C) 7 Figure. V F vs. T J
FGHTSQDNL TYPICAL CHARACTERISTICS T C = C T C = C V CE = V, R gate =, V GE = V Ipk (A) T C = C T C = C Ramp Square.. FREQUENCY (khz) Figure. Collector Current vs. Switching Frequency R(t), SQUAREWAVE PEAK ( C/W).... % Duty Cycle % % % % Single Pulse Junction R JC =. R R R n C C...... C n Case R i ( C/W) C i (J/W)....9..9.7...97.7.7 Duty Factor = t /t Peak T J = P DM x Z JC + T C PULSE TIME (sec) Figure. IGBT Transient Thermal Impedance R(t), SQUAREWAVE PEAK ( C/W). % Duty Cycle % % % % Junction Duty Factor = t /t. Single Pulse Peak T J = P DM x Z JC + T C...... PULSE TIME (sec) R JC =. R R R n C C C n Case R i ( C/W).9.7.7.7.7..9.77..7 C i (J/W).9...9.7.99.7.97..7 Figure. Diode Transient Thermal Impedance 7
FGHTSQDNL Figure 7. Test Circuit for Switching Characteristics Figure. Definition of Turn On Waveform
FGHTSQDNL Figure 9. Definition of Turn Off Waveform 9
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