Preliminary Technical Information Polar3 TM HiperFET TM Power MOFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT6N5P3 IXFQ6N5P3 IXFH6N5P3 I D25 R D(on) = = 6A m TO-268 (IXFT) ymbol Test Conditions Maximum Ratings = 25 C to 5 C 5 V V DR = 25 C to 5 C, R = M 5 V Continuous 3 V M Transient 4 V I D25 = 25 C 6 A I DM = 25 C, Pulse Width Limited by M 5 A I A = 25 C 3 A E A = 25 C J dv/dt I I DM, V DD, 5 C 35 V/ns P D = 25 C 4 W -55... +5 C M 5 C T stg -55... +5 C T L Maximum Lead Temperature for oldering 3 C T OLD Plastic Body for s 26 C M d Mounting Torque (TO-247 & TO-3P).3 / Nm/lb.in. Weight TO-268 4. g TO-3P 5.5 g TO-247 6. g ymbol Test Conditions Characteristic Values ( B = V = ma 5 V (th) = = 4mA 3. 5. V I = 3V, = V na I D =, = V 25 A = 25 C 2 ma R D(on) = V =.5 I D25, Note m TO-3P (IXFQ) D TO-247 (IXFH) = ate D = Drain = ource Tab = Drain Features D Fast Intrinsic Rectifier Avalanche Rated Low R D(ON) and Q Low Package Inductance Advantages High Power Density Easy to Mount pace avings Applications witch-mode and Resonant-Mode Power upplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and ervo Controls 23 IXY CORPORATION, All Rights Reserved D3A(/3)
ymbol Test Conditions Characteristic Values ( g fs = 2V =.5 I D25, Note 35 6 C iss 625 pf C oss = V, = 2, f = MHz 68 pf C rss 5 pf R i ate Input Resistance. t d(on) 8 ns t r Resistive witching Times 6 ns t d(off) = V, =.5 =.5 I D25 37 ns t f R = (External) 8 ns Q g(on) 96 nc Q gs = V, =.5 =.5 I D25 28 nc Q gd 26 nc R thjc.2 C/W R thc (TO-247 & TO-3P).25 C/W IXFT6N5P3 IXFQ6N5P3 IXFH6N5P3 TO-3P Outline ource-drain Diode ymbol Test Conditions Characteristic Values ( I = V 6 A I M Repetitive, Pulse Width Limited by M 24 A TO-247 Outline V D I F = I, = V, Note.4 V t rr 25 ns I F = 3A, -di/dt = A/ s I RM A V Q R = V, = V RM. μc Note. Pulse test, t 3 s, duty cycle, d 2%. 2 3 P TO-268 Outline e Terminals: - ate 3 - ource 2 - Drain Terminals: - ate 3 - ource 2,4 - Drain PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical pecifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXY reserves the right to change limits, test conditions, and dimensions without notice. Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.85.29 A 2.2 2.54.87.2 A 2 2.2 2.6.59.98 b..4.4.55 b.65 2.3.65.84 b 2 2.87 3.2.3.23 C.4.8.6.3 D 2.8 2.46.89.845 E 5.75 6.26.6.64 e 5.2 5.72.25.225 L 9.8 2.32.78.8 L 4.5.77 P 3.55 3.65.4.44 Q 5.89 6.4.232.252 R 4.32 5.49.7.26 6.5 BC 242 BC IXY Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXY MOFETs and IBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,44,65 B 6,683,344 6,727,585 7,5,734 B2 7,57,338B2 by one or more of the following U.. patents: 4,86,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,45 B2 6,759,692 7,63,975 B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,55 6,7,463 6,77,478 B2 7,7,537
IXFT6N5P3 IXFQ6N5P3 IXFH6N5P3 Fig.. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC 6 5 = V 8V 2 = V 8V 4 3 2 8 6 4 2 2 3 4 5 6 7 5 5 2 25 3 6 5 Fig. 3. Output Characteristics @ = 25ºC = V 3.4 3. Fig. 4. R D(on) Normalized to I D = 3A Value vs. Junction Temperature = V 4 3 2 RD(on) - Normalized 2.6 2.2.8.4 I D = 6A I D = 3A 4V 2 4 6 8 2 4 6 8..6.2-5 -25 25 5 75 25 5 - Degrees Centigrade 3.4 Fig. 5. R D(on) Normalized to I D = 3A Value vs. Drain Current 7 Fig. 6. Maximum Drain Current vs. Case Temperature 3. = V = 25ºC 6 RD(on) - Normalized 2.6 2.2.8.4 = 25ºC 5 4 3 2..6 2 3 4 5 6 7 8 9 2 I D - Amperes -5-25 25 5 75 25 5 - Degrees Centigrade 23 IXY CORPORATION, All Rights Reserved
IXFT6N5P3 IXFQ6N5P3 IXFH6N5P3 Fig. 7. Input Admittance Fig. 8. Transconductance 2 9 8 = - 4ºC 7 6 5 4 3 = 25ºC 25ºC - 4ºC g f s - iemens 8 6 4 25ºC 25ºC 2 2 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts 2 3 4 5 6 7 8 9 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. ate Charge 8 6 4 9 8 = 2 I D = 3A I = ma I - Amperes 2 8 6 = 25ºC V - Volts 7 6 5 4 3 4 2 = 25ºC 2.3.4.5.6.7.8.9...2 V D - Volts 2 3 4 5 6 7 8 9 Q - NanoCoulombs, Fig.. Capacitance Fig. 2. Forward-Bias afe Operating Area C iss R D(on) Limit Capacitance - PicoFarads, f = MHz C oss C rss = 5ºC = 25ºC ingle Pulse µs ms 5 5 2 25 3 35 4., IXY Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT6N5P3 IXFQ6N5P3 IXFH6N5P3 Fig. 3. Maximum Transient Thermal Impedance.2 Fig. 3. Maximum Transient Thermal Impedance AAAAA. Z(th)JC - ºC / W....... Pulse Width - econds 23 IXY CORPORATION, All Rights Reserved IXY REF: F_6N5P3(W8)3--