P - 9784A EXFET Power MOSFET V S 3 V V GS Max ± 2 V * R Son) max @V GS = 4.V) 63 m R Son) max @V GS = 2.V) 8 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoS compliant containing no lead, no bromide and no halogen Ö Environmentally friendly MSL, Consumer Qualification Increased Reliability Absolute Maximum Ratings Symbol Parameter Max. Units V S rain-source Voltage 3 V I @ T A = 2 C Continuous rain Current, V GS @ V 3.4 I @ T A = 7 C Continuous rain Current, V GS @ V 2.7 A I M Pulsed rain Current 7 P @T A = 2 C Maximum Power issipation.3 P @T A = 7 C Maximum Power issipation.8 W Linear erating Factor. W C V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range - to + C Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient e R JA Junction-to-Ambient t<s) f 99 CW ORERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page www.irf.com 392
Electric Characteristics @ T J = 2 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V BR)SS rain-to-source Breakdown Voltage 3 V V GS = V, I = 2μA V BR)SS T J Breakdown Voltage Temp. Coefficient.2 V C Reference to 2 C, I = ma R Son) Static rain-to-source On-Resistance 46 63 V GS = 4.V, I = 3.4A d m 9 8 V GS = 2.V, I = 2.7A d V GSth) Gate Threshold Voltage..8. V V S = V GS, I = μa I SS. V S =24V, V GS = V rain-to-source Leakage Current μa V S = 24V, V GS = V, T J = 2 C I GSS Gate-to-Source Forward Leakage V GS = 2V na Gate-to-Source Reverse Leakage - V GS = -2V R G Internal Gate Resistance 3.9 gfs Forward Transconductance 9. S V S = V, I = 3.4A Q g Total Gate Charge 2.9 I = 3.4A Q gs Gate-to-Source Charge.3 nc V S =V Q gd Gate-to-rain "Miller") Charge. V GS = 4.V d t don) Turn-On elay Time 3.3 V =Vd t r Rise Time 4. I =.A ns t doff) Turn-Off elay Time 2 R G = 6.8 t f Fall Time 4.9 V GS = 4.V C iss Input Capacitance 27 V GS = V C oss Output Capacitance 32 pf V S = 24V C rss Reverse Transfer Capacitance 2 ƒ =.Mz Source - rain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current.3 MOSFET symbol I SM Body iode) showing the A Pulsed Source Current integral reverse 7 Body iode)ãc p-n junction diode. G S V S iode Forward Voltage.2 V T J = 2 C, I S = 3.4A, V GS = V d t rr Reverse Recovery Time 8.8 3 ns T J = 2 C, V R = 24V, I F =.3A Q rr Reverse Recovery Charge 2.7 4. nc didt = Aμs d 2 www.irf.com
I, rain-to-source Current A) R Son), rain-to-source On Resistance Normalized) I, rain-to-source Current A) I, rain-to-source Current A) VGS TOP V 4.V 3.V 2.V 2.3V 2.V.8V BOTTOM.V VGS TOP V 4.V 3.V 2.V 2.3V 2.V.8V BOTTOM.V.V.V 6μs PULSE WIT Tj = 2 C.. V S, rain-to-source Voltage V) 6μs PULSE WIT Tj = C.. V S, rain-to-source Voltage V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics.8.6 I = 3.4A V GS = 4.V.4 T J = C T J = 2 C.2. V S = V 6μs PULSE WIT.... 2. 2. 3. V GS, Gate-to-Source Voltage V).8.6-6 -4-2 2 4 6 8 2 4 6 T J, Junction Temperature C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3
I S, Reverse rain Current A) I, rain-to-source Current A) C, Capacitance pf) V GS, Gate-to-Source Voltage V) C iss V GS = V, f = MZ C iss = C gs + C gd, C ds SORTE C rss = C gd C oss = C ds + C gd 4. 2.. 8. I = 3.4A V S = 24V V S = V V S = 6.V C oss C rss 6. 4. 2.. 2 3 4 6 7 8 V S, rain-to-source Voltage V) Q G, Total Gate Charge nc) Fig. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN TIS AREA LIMITE BY R S on) T J = C msec μsec msec T J = 2 C. V GS = V.2.4.6.8..2 V S, Source-to-rain Voltage V) Fig 7. Typical Source-rain iode Forward Voltage T A = 2 C Tj = C Single Pulse... V S, rain-to-source Voltage V) Fig 8. Maximum Safe Operating Area 4 www.irf.com
I, rain Current A) Thermal Response Z thja ) CW 4 V S R 3 R G V GS.U.T. + - V 2 V GS Pulse Width µs uty Factor Fig a. Switching Time Test Circuit 2 7 2 T A, Ambient Temperature C) Fig 9. Maximum rain Current vs. Ambient Temperature V S 9% % V GS t don) t r t doff) t f Fig b. Switching Time Waveforms =..2...2.. SINGLE PULSE TERMAL RESPONSE ) Notes:. uty Factor = tt2 2. Peak Tj = P dm x Zthja + T A. E-6 E-.... t, Rectangular Pulse uration sec) Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com
R Son), rain-to -Source On Resistance m ) R S on), rain-to -Source On Resistance m ) 9 8 I = 3.4A 9 8 7 Vgs = 2.V 7 6 T J = 2 C 6 Vgs = 4.V T J = 2 C 4 2 3 4 6 7 8 9 2 4 2 4 6 8 2 4 6 8 V GS, Gate -to -Source Voltage V) I, rain Current A) Fig 2. Typical On-Resistance vs. Gate Voltage Fig 3. Typical On-Resistance vs. rain Current Id Vds Vgs Vgsth) 2K K UT L VCC Qgodr Qgd Qgs2 Qgs Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
V GSth), Gate threshold Voltage V) Single Pulse Power W).2. 8.8.6.4 I = μa I = 2μA 6 4.2 2. -7 - -2 2 7 2 T J, Temperature C ) Fig. Typical Threshold Voltage vs. Junction Temperature E-7 E-6 E- E-4 E-3 E-2 E- E+ Time sec) Fig 6. Typical Power vs. Time www.irf.com 7
, U U Micro3 SOT-23) Package Outline imensions are shown in millimeters inches) 6 B 6 A 3 E E. [.6] M CBA 2 e e 4 L c A A2 C. [.4] C A 3X b.2 [.8] M C B A NOTES: Recommended Footprint.972 IMENSIONS SYMBOL MILLIMETERS INCES MIN MAX MIN MAX A.89.2 A...4 A2.88.2 b.3. c.8.2 2.8 3.4 E 2. 2.64 E.2.4 e.9 BSC %6 e.9 BSC %6 L.4.6 L.4 REF REF L2.2 BSC BSC 8 8 L2.82.9 2.742 3X L 7.9. IMENSIONING TOLERANCING PER ANSI Y4.M-994 2. IMENSIONS ARE SOWN IN MILLIMETERS [INCES]. 3. CONTROLLING IMENSION: MILLIMETER. 4. ATUM PLANE IS LOCATE AT TE MOL PARTING LINE.. ATUM A AN B TO BE ETERMINE AT ATUM PLANE. 6. IMENSIONS AN E ARE MEASURE AT ATUM PLANE. IMENSIONS OES NOT INCLUE MOL PROTRUSIONS OR INTERLEA FLAS. MOL PROTRUSIONS OR INTERLEA FLAS SALL NOT EXCEE.2 MM [. INC] PER SIE. 7. IMENSION L IS TE LEA LENGT FOR SOLERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEEC OUTLINE TO-236 AB. Micro3 SOT-23) Part Marking Information RWV7KLVSUWPUNLQJLQIRUPWLRQSSOLVWRGYLFVSURGXFGIWU ; 2 % 8 7 7 3 2 7 2 ) ) ) 6 7 8 9 : ; < = 2 % ) 8 : X * 2 7 + % ) * + -. 3 3 W R N Z N R Z WK Y R E OLQ G V W LF G LQ K Q Z R K V V U ) ) ATE COE MARKING INSTRUCTIONS ::,)3%<67,*,72)< :2. < < :. : ::,)3%<77 < < % ) * + -. % Note: For the most current drawing please refer to IR website at: http:www.irf.compackage 8 www.irf.com :2. :. % ; < = : ; < =
Micro3 SOT-23) Tape Reel Information imensions are shown in millimeters inches) 2..8 ).9.77 ) 4..6 ) 3.9.4 ).6.62 )..6 ).8.72 ).6.6 ).32. ).2.4 ) TR 3..39 ) 3.4.36 ) 8.3.326 ) 7.9.32 ) FEE IRECTION 4..6 ) 3.9.4 )..43 ).9.36 ).3.3 ).2. ) 78. 7.8 ) MAX. 9.9.39 ) 8.4.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 EIA-4. Note: For the most current drawing please refer to IR website at: http:www.irf.compackage www.irf.com 9
Orderable part number Package Type Standard Pack Form Quantity Micro3 SOT-23) Tape and Reel 3 Note Qualification information Qualification level Moisture Sensitivity Level RoS compliant Consumer per JEEC JES47F guidelines ) MSL Micro3 SOT-23) per IPCJEEC J-ST-2 ) Yes Qualification standards can be found at International Rectifier s web site http:www.irf.comproduct-inforeliability igher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http:www.irf.comwhoto-callsalesrep Applicable version of JEEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 4μs; duty cycle 2%. ƒ Surface mounted on in square Cu board. Refer to application note #AN-994. ata and specifications subject to change without notice. IR WORL EAQUARTERS: N. Sepulveda Blvd., El Segundo, California 924, USA Tel: 3) 22-7 TAC Fax: 3) 22-793 Visit us at www.irf.com for sales contact information.32 www.irf.com